High-resolution XRD study of stress-modulated YBCO films with various thicknesses

High-quality epitaxial YBa₂Cu₃O_7−δ (YBCO) superconducting films with thicknesses between 0.2 and 2 μm were fabricated on (0 0 l) LaAlO₃ with direct-current sputtering method. The influence of film thickness on the structure and texture was investigated by X-ray diffraction conventional θ–2θ scan and high-resolution reciprocal space mapping (HR-RSM). The films grew with strictly c-axis epitaxial, and no a-axis-oriented growth was observed up to a thickness of 2 μm. Lattice parameters of the YBCO films with different thicknesses were extracted from symmetry and asymmetry HR-RSMs. The X-ray lattice parameter method was used to determine the residual stress in YBCO films by measuring the a-, b-, c-axis strains, respectively. The results showed that YBCO films within thinner than 1 μm were under compressive stress, which was relieved increasing of film thickness. However, beyond 1 μm in thickness, YBCO films exhibited a tensile stress. Based on the experimental analysis, the variety of residual stresses in the films is mainly attributed to oxygen vacancies with thickness of YBCO film increasing.     

气相输运沉积制备c轴择优取向的碘化铋薄膜

铋基卤化物材料因其无毒和优良的光电性能而显示出巨大的应用潜力。BiI₃作为一种层状重金属半导体,已被用于X射线检测、γ射线检测和压力传感器等领域,最近其作为一种薄膜太阳能电池吸收材料备受关注。本文采用简单的气相输运沉积(VTD)法,以BiI₃晶体粉末作为蒸发源,在玻璃基底上得到高质量c轴择优取向的BiI₃薄膜。并通过研究蒸发源温度和沉积距离对薄膜物相和形貌的影响,分析了BiI₃薄膜择优生长的机理。结果表明VTD法制备的BiI₃薄膜属于三斜晶系,其光学带隙为~1.8 eV。沉积温度对薄膜的择优取向有较大影响,在沉积温度低于270 ℃时,沉积的薄膜具有沿c轴择优取向生长的特点,超过此温度,c轴择优取向生长消失。在衬底温度为250 ℃、沉积距离为15 cm时制备的薄膜结晶性能最好,晶体形貌为片状八面体。     

Effects of meniscus on the directional growth of potassium niobate single crystals

The study of meniscus effects on the directional growth of single crystals of potassium niobate (KNbO₃) with a [110]_pc oriented seed by the top-seeded-solution-growth technique has been described. The directional growth of KNbO₃ single crystals has been illustrated for different crystallographic orientations of the crystal. Experimental results show that the shape of the solution flux meniscus, which is determined by a number of growth parameters, has a significant effect on growth rates on different 100_pc, 010_pc and 001_pc type surfaces. Findings based on this work enable one to select a dominant growth direction and hence to engineer the geometrical shaping of resultant KNbO₃ single crystals through careful control of growth parameters. Maximum crystal dimensions for the grown KNbO₃ along [100]_pc and [001]_pc achieved in this work are 34.0 and 31.2 mm, respectively.     

Thick single crystalline vanadyl phthalocyanine film epitaxially grown on KBr crystal by molecular beam epitaxy

Structural analyses are reported of 5 μm thick VOPc films grown on a KBr(001) surface by the MBE technique. The crystal is monoclinic with lattice parameters a = 14.2 Å, b = 13.1 Å, c = 12.7 Å and β = 103.2°. The orientation of the unit cell is influenced by the crystal lattice of the substrate even in this thickness range: The projections of the a- and b-axes of VOPc onto the (001) plane of KBr coincide with the [110] directions of KBr. Four kinds of crystal orientations were observed in pole figure measurements.     

一种钡金属有机框架材料的合成及其晶体结构和发光性能的研究

金属有机框架(MOFs)因其独特的结构和在晶体工程与材料科学领域中的潜在应用而成为研究热点。目前,大多数MOFs都以过渡金属为中心,而具有特殊构型的第Ⅱ主族金属(碱土金属)受到的关注则相对较少。本文采用溶剂热法,以异烟酸氮氧化物(HINO)为有机配体,与二水合氯化钡(BaCl₂·2H₂O)金属盐合成了一种新型的三维Ba(Ⅱ)-MOF材料[Ba(INO)₂]_n。通过单晶X射线衍射、X射线粉末衍射、红外光谱、元素分析、热重分析、荧光光谱等测试对该Ba-MOF进行了结构和性能表征。单晶X射线衍射结果表明:[Ba(INO)₂]_n为单斜晶系,Cc空间群,晶胞参数为a=1.636 14(7) nm,b=1.126 35(4) nm,c=0.742 40(3) nm,中心离子Ba(Ⅱ)为高配位数的九配位变形三帽三角棱柱体几何构型。[Ba(INO)₂]_n结构中的Ba—O一维链由B型INO配体连接形成二维平面层结构,再由A型INO配体沿着4个方向延伸连接形成三维框架。然而有趣的是,当Ba—O一维链直接由A型INO配体连接时即可形成三维微孔框架,而B型INO配体则进一步撑起该三维框架形成坚实稳定的柱撑结构。[Ba(INO)₂]_n表现出良好的热稳定性。此外,固态荧光测试显示,在330 nm紫外光激发下,[Ba(INO)₂]_n发出395 nm的蓝光,相比于HINO配体的437 nm最大发射峰,出现了明显的蓝移,这是由INO配体与Ba(Ⅱ)金属离子之间的电荷转移导致的。     

手性镝(III)-酒石酸配合物的合成、单晶转换及热稳定性研究

以2,3-二乙酰对甲苯-D-酒石酸(D-H₂DTTA)为原料,与金属Dy(III)盐反应,经过单晶-单晶转换,得到一种新的酒石酸(H₂tar)配合物[Dy(Htar)₃(H₂O)₃]_n(1),对该配合物用元素分析、红外光谱、X-射线单晶衍射、粉末衍射以及差热-热重等进行了表征。晶体结构分析表明,配合物1属三方晶系,R3空间群,晶胞参数为a=b=2.723 16(14) nm,c=0.762 75(6) nm,α=β=90.00°,γ=120.00°,V=4.898 5 (6) nm³,Z=3, 剑桥晶体数据库(Cambridge Crystallographic Data Centre, CCDC)编号为1498504。配合物中的金属Dy³⁺分别与三个酒石酸离子配体Htar^-上的六个氧原子和三个配位水分子上的三个氧原子配位,形成九配位三帽三棱柱构型。配合物1在c方向上通过O1和O5原子连接成一维链状结构,相邻Dy³⁺之间的距离为0.762 8(1) nm。配合物1是由[Dy(HDTTA)₃(CH₃OH)₃]_n经单晶-单晶转换过程得到,其转换过程包括酯基水解及水分子取代两类反应。配合物1具有一定的热稳定性,45~166 ℃失去配位水分子,高于166 ℃配合物骨架坍塌。     

Growth of Na modified potassium lithium niobate crystal by the Czochralski method

Transparent Na modified potassium lithium niobate (Na_0.23K_2.60Li_1.82Nb_5.35O_15.70; NKLN) crystal was successively grown by the Czochralski method using RF induction heating from melt composition Na₂O:K₂O : Li₂O:Nb₂O₅=2:30:25:43 mol%. NKLN crystal showed a tetragonal tungsten bronze structure with lattice constants a=12.5446±0.0010 Å and c=4.0129±0.0005 Å at room temperature. The dielectric constant along the c-axis ε₃₃ showed a sharp maximum around 480 °C. Optical transmission edge was 370 nm and optical transmission spectra showed no absorption at wavelengths ranging from 380 to 800 nm. The structural and optical properties of NKLN were similar to those of the near stoichiometric KLN crystals. We believe that the growth of NKLN by the Czochralski method has an advantage for a large size and high-quality crystal.     

Formation of LiNbO3 films by hydrolysis of metal alkoxides

Homogeneous, crack-free, thin films of crystalline LiNbO₃ were synthesized above 250°C on Si(100) substrates by the dip-coating method using a double alkoxide solution. The coating solution, which was prepared by the controlled partial hydrolysis of the double alkoxide, gave stoichiometric LiNbO₃ crystalline films at temperatures as low as 250°C. The concentration of the alkoxide solution influenced both of thickness and quality of films. Crystallinity of thin film top-coated directly on the substrate affected the crystallization state of films coated on the film remarkably. Films crystallized on -Al₂O₃(0001) showed preferred orientation along the c-axis, while the preferred orientation could not be observed on Si(100) substrates.     

弛豫铁电0.24PIN-0.47PMN-0.29PT单晶声表面波性能研究

随着信息技术的迅速发展,对声表面波器件的要求也进一步提高.为寻找性能更加优异的声表面波器件基底材料,本文利用分波解法对室温下[001]c及[011]c极化弛豫铁电0.24PIN-0.47PMN-0.29PT单晶的声表面波性能进行研究.利用[001]c及[011]c极化弛豫铁电0.24PIN-0.47PMN-0.29PT...     

Correlation between interfacial structure and c-axis-orientation of LiNbO3 films grown on Si and SiO2 by electron cyclotron resonance plasma sputtering

Thin films of crystalline lithium niobate (LN) grown on Si(1 0 0) and SiO₂ substrates by electron cyclotron resonance plasma sputtering exhibit distinct interfacial structures that strongly affect the orientation of respective films. Growth at 460–600 °C on the Si(1 0 0) surface produced columnar domains of LiNbO₃ with well-oriented c-axes, i.e., normal to the surface. When the SiO₂ substrate was similarly exposed to plasma at temperatures above 500 °C, however, increased diffusion of Li and Nb atoms into the SiO₂ film was seen and this led to an LN–SiO₂ alloy interface in which crystal-axis orientations were randomized. This problem was solved by solid-phase crystallization of the deposited film of amorphous LN; the degree of c-axis orientation was then immune to the choice of substrate material.     

Growth of NaBi(WO4)2 crystal by modified-Bridgman method

NaBi(WO₄)₂ (NBW) crystals have been grown for the first time by modified-Bridgman method. Influences of some factors on the crystal growth process are discussed. X-ray powder diffraction experiments show that the unit cell parameters of NBW crystal are a=b=0.5284 nm, c=1.1517 nm, and V=0.3215 nm³. The differential thermal analysis shows that the NBW crystal melts at 923°C.     

InGaAs/InAlAs in-plane superlattices grown on slightly misoriented (110) InP substrates by molecular beam epitaxy

InGaAs/InAlAs in-plane superlattices (IPSLs) composed of InAs/GaAs and InAs/AlAs monolayer superlattices were grown using molecular beam epitaxy. The substrates were misoriented (110) InP tilting 3° toward the [00 ] direction. We grew half monolayers of AlAs and GaAs and single monolayers of InAs alternately, keeping regular arrays of single monolayer steps. The structures were evaluated by transmission electron microscopy (TEM). In a transmission electron diffraction pattern from the ( 10) cross-section, we observed two types of superstructure spot pairs double-positioned in the [001] direction, indicating the formation of the intended IPSL structures. In a cross-sectional TEM dark-field image, we observed the InGaAs/InAlAs superlattice structures formed almost in the [001] direction. The mean period of the superlattices was approximately 4 nm, which was comparable to the terrace width expected from the substrate tilt angle. However, IPSL structures were not completely formed, i.e., the lateral interfaces meandered along the growth direction, and partial disorderings were often observed. The photoluminescence spectrum from the IPSL had a peak corresponding to the InGaAs (2 nm thick)/InAlAs (2 nm thick) superlattice in addition to a peak corresponding to the In_0.5Al_0.25Ga_0.25As alloy.     

吡嗪席夫碱银配位聚合物的晶体结构、发光性质和抗菌活性

利用2-乙酰基吡嗪和异烟肼在无水乙醇中反应得到席夫碱化合物N-[(1-吡嗪基)-1-亚甲基]异烟酰肼(L)。以L和硝酸银为原料,通过扩散法合成了配位聚合物{[Ag₃L₂(NO₃)₂]CH₃CN}_n,并通过X-射线单晶衍射、元素分析、红外光谱、荧光光谱对其进行结构解析和性质表征。单晶衍射分析结果表明,该配位聚合物属单斜晶系,P2₁/c空间群,晶胞参数为a=0.611 70(10) nm,b=1.347 08(3) nm,c=2.018 69(4) nm,V=1.661 06(6) nm³,Z=2,Mr=970.19,Dc=1.940 g/cm³,配体分子以银离子为连接点形成二维网状结构。荧光光谱分析表明配体和配位聚合物均有较好的发光性能,且配位聚合物荧光强度优于配体。抗菌活性表明,配位聚合物对白色葡萄球菌、藤黄八叠球菌及枯草芽孢杆菌有较好的特异性,具有良好的医药应用前景。     

4-硝基氮氧化吡啶-2-甲酸构筑的镧、镨配合物的合成、晶体结构及荧光性质

选择刚性有机化合物4-硝基氮氧化吡啶-2-甲酸(POA)作为配体,与稀土金属La(III)、Pr(III)反应,合成了2个一维配位聚合物。X射线单晶衍射结果表明：配合物1的分子式为{[La(POA)₃H₂O]·CH₃OH}_n,属于单斜晶系,空间群是P2₁/c。该晶胞参数分别为a=1.756 8 nm,b=0.663 6 nm,c=2.048 6 nm,α=90°,β=96.96°,γ=90°,V=2.370 7 nm³,M_r=738.28。配合物2的分子式为{[Pr(POA)₃H₂O]·H₂O}_n,属于单斜晶系,空间群是P2₁/c。该晶胞参数分别为a=1.757 8 nm,b=0.656 9 nm,c=2.046 7 nm,α=90°,β=97.20°,γ=90°,V=2.344 8 nm³,M_...     

Solidification characteristics of textured 123 phase in YBCO by laser floating zone leveling (LFZL) method

Because of incongruent melting in YBa₂Cu₃O_7-x, it is difficult to grow the textured 123 phase directly from the laser-heated molten zone in the laser floating zone (LFZ) method. To overcome this problem, the laser floating zone leveling (LFZL) method was utilized following a pseudo-binary diagram along the Y₂BaCuO₅−YBa₂Cu₃O_7−x tie line and a crystal rod of textured 123 phases was directly grown from the molten zone. Experimental results indicate that the orientation of the textured tetragonal 123 phases is perpendicular to the c-axis and that the T_c of the grown crystal rod is 91.2 K after annealing at 550°C for 40 h in flowing oxygen. Also, the solidified morphologies of some crystal rods grown at different growth rates were observed.     

Deposition of InP on GaAs Substrates in the InP/PCl3/H2 System

Vapour phase epitaxial layers of InP were deposited onto (111)A-, (111)B-, (001)-, and (110)-oriented GaAs substrates in the InP/PCl₃/H₂ system using a close-space technique. It is shown that the dependence of the layer quality on the substrate orientation is due to differences in the initial growth stages. Results on the growth rates and the electrical properties of the layers are reported.     

金红石型Ti1-2xCrxMoxO2黑色色料制备及其性能研究

以TiO₂、Cr₂O₃和MoO₃为主要原料,采用固相反应法合成了金红石型Ti_1-2xCr_xMo_xO₂(x=0、0.05、0.10、0.15、0.20)色料。研究了Cr/Mo共掺杂量和煅烧温度对Ti_1-2xCr_xMo_xO₂色料的晶型结构、呈色性能和微观形貌等的影响。研究结果表明,5%~15%摩尔分数的Cr/Mo等量共掺杂都获得单相金红石型结构黑色色料,均可促进锐钛矿向金红石转变,且Mo掺杂有利于提高Cr在TiO₂晶格中的固溶度。随Cr/Mo共掺杂量增加,样品的黑度(L^*值)呈先减小后增大的趋势,而红色度(a^*值)和黄色度(b^*值)都表现出相反的趋势。煅烧温度在950~1 100 ℃时,样品的色度参数变化相对较小。在1 100 ℃煅烧得到的Ti_0.70Cr_0.15Mo_0.15O₂色料黑色呈色性能最佳,其L^*、a^*和b^*值分别为24.41、2.12和-2.53,且在陶瓷釉中表现出良好的呈色性能和化学稳定性。适量Cr/Mo共掺杂使TiO₂晶格产生畸变和电荷缺陷,从而吸收绝大部分可见光,是其呈现黑色的主要原因。     

吡啶鎓盐配体构筑的多钼酸基配合物的合成、结构及光催化性能

本文在水热条件下合成了一例同多钼酸阴离子[δ-Mo₈O₂₆]^4-基配合物[Co(bipbc)(δ-Mo₈O₂₆)_0.5(H₂O)₃] (bipbc=4,4-双[(4-羧基吡啶)甲基]联苯),其为一维链状结构,包含环型双核钴配合物[Co₂(bipbc)₂]⁴⁺和[δ-Mo₈O₂₆]^4-簇。该配合物结晶于单斜晶系,P2₁/n空间群,a=1.147 9(8) nm,b=1.440 9(11) nm,c=2.082 9(16) nm,β=93.469(2)°,V=3.438 8(4) nm³,Z=4,M_r=1 129.18,F(000)=2 204,μ=1.979 mm^-1,D_c=2.181 mg·m^-3,S=1.019,R₁=0.056 2,wR₂=0.137 7。光催化性质研究表明,在可见光、近红外光和全光谱的光照条件下,标题配合物对龙胆紫(GV)和亚甲基蓝(MB)的降解,表现出一定的光催化活性。     

Growth of large dimension BaWO4 crystal by the Czochralski method

In this paper, polycrystalline materials of BaWO₄ were synthesized by solid-state phase method, and a single crystal of BaWO₄ was successfully grown along a and c-axis direction by using the Czochralski method. Up to 20×22×80 mm³ BaWO₄ crystal was obtained, and X-ray powder diffraction results show that the as-grown BaWO₄ crystal belongs to the scheelite structure. The effective segregation coefficients of Ba and W of the BaWO₄ crystal were measured by the X-ray fluorescence method, and the effective segregation coefficients of Ba and W were near 1. The rocking curve from (2 0 0) diffraction plane of as-grown BaWO₄ single crystal was measured on the High-resolution X-ray diffractometer D5005, and the full-width at half-maximum value was found to be 26.64′′ The density and hardness of the BaWO₄ crystal was measured, the measured density was in agreement with the calculated result, and the Mohs hardness was about 4.     

A comparative study of GaAs- and InP-based HBT growth by means of LP-MOVPE using conventional and non gaseous sources

Low-pressure metalorganic vapor phase epitaxy (LP-MOVPE) growth of carbon doped (InGa)P/GaAs and InP/(InGa)As heterojunction bipolar transistors (HBT) is presented using a non-gaseous source (ngs-) process. Liquid precursors TBAs/TBP for the group-V and DitBuSi/CBr₄ for the group-IV dopant sources are compared to the conventional hydrides AsH₃/PH₃ and dopant sources Si₂H₆/CCl₄ while using TMIn/TEGa in both cases. The thermal decomposition of the non gaseous sources fits much better to the need of low temperature growth for the application of carbon doped HBT. The doping behavior using DitBuSi/CBr₄ is studied by van der Pauw Hall measurements and will be compared to the results using Si₂H₆/CCl₄. Detailed high resolution X-ray diffraction (HRXRD) analysis based on 004 and 002 reflection measurements supported by simulations using BEDE RADS simulator enable a non-destructive layer stack characterization. InGaP/GaAs HBT structures designed for rf-applications are grown at a constant growth temperature of T_gr=600°C and at a constant V/III-ratio of 10 for all GaAs layers. P-type carbon concentrations up to P = 5·10¹⁹cm⁻³ and n-type doping concentrations up to N = 7·10¹⁸cm⁻³ are achieved. The non self-aligned devices (A_E = 3·10 μm²)_show excellent performance, like a dc-current gain of B_max = 80, a turn on voltage of V_offset = 110 mV (Breakdown Voltage V_CEBr,0 > 10 V), and radio frequency properties of f_T/f_max = 65 GHz/59 GHz.

In the non-gaseous source configuration the strong reduction in the differences of V/III-ratios and temperatures during HBT structure growth enable easier LP-MOVPE process control. This is also found for the growth InP/InGaAs HBT where a high dc-current gain and high transit frequency of f_T= 120 GHz are achieved.