X‐ray Topographic Characterization of L‐Arginine Phosphate Monohydrate Crystals

L‐arginine phosphate monohydrate (LAP) organic crystals were investigated by X‐ray Lang topography. Selected topographs of nearly perfect seeded grown and self‐nucleated crystals show that typical defects inside are grown‐in and post‐growth dislocations, growth sector boundaries, and microbes, while their features are presented and discussed. No structural defects associated to the presence of step bunching on the (100) surface of the crystal have been observed by X‐ray topography.     

Natural crystallization

Natural mineral crystals grow under a broad spectrum of conditions; from vapors, from hydrothermal solutions, from magmas (high temperature solutions), or through metasomatic or metamorphic reactions. In understanding kinetic problems involved in natural crystallization, there are two ways of approach; (1) experimentally stimulating textures of rocks, and (2) decoding the paragenetic information contained in natural crystals. The latter approach is especially important, since in situ observation is impossible. Key Key features which aid in deciphering natural growth processes and conditions include external forms, surface microtopographs of crystal faces, internal inhomogeneity (growth bands, growth sectors, inclusions, twin or exsolution textures), lattice defects (plane defects, dislocations) and impurities (precipitations). Mainly based on the observations of surface microtopographs of natural crystals, characteristics of crystallization in magma, in hydrothermal solution, in vapor phase, in hydrothermal metasomatism and in regional metamorphism are analysed and reviewed in this paper. The difference and similarity between natural and synthetic crystals are also discussed.     

Nearly perfect crystal growth of III–V compounds by the temperature difference method under controlled vapour pressure

Nearly perfect crystals of III–V compounds are grown by a new LPE method which can produce homogeneous and high-quality crystals with controlled stoichiometry. Homogeneous epitaxial growth is performed at fixed temperature with a temperature difference in a melt, under controlled vapour pressure of the group V elements. In the experiment, the fluctuation of growing temperature is ascertained to produce a number of new defects and the effect of controlled vapour pressure is investigated. It has been ascertained that an optimum vapour pressure, which is the function of growing temperature, can suppress the generation of “rooty faults” to a minimum density. There is close agreement between the optimum vapour pressure in the heat treatment of crystals to reduce the generation density of lattice defects and the optimum vapour pressure to obtain defect-free crystals in the process of crystal growth. The epitaxial layers prepared under optimum vapour pressure have the highest mobility and the lowest additional carrier concentration. The lattice constant of the epitaxially grown crystal under controlled vapour pressure also shows a minimum value at optimum pressure. This also shows that the controlled vapour pressure is important in lattice fitting of epitaxial layers. The epitaxial layers grown by the temperature difference method (TDM) under optimum control of the vapour pressure (CVP) are almost as perfect crystallographically as measured by X-ray topography. The experiments are performed for GaP and GaAs.     

Growth and properties of Pb[(Zn1/3Nb2/3)0.91Ti0.09]O3 single crystals directly from melt

Pb[(Zn_1/3Nb_2/3)_0.91Ti_0.09]O₃ (PZNT91/9) single crystals were grown by a modified Bridgman method directly from melt using an allomeric Pb[(Mg_1/3Nb_2/3)_0.69Ti_0.31]O₃ (PMNT69/31) single crystal as a seed. X-ray diffraction (XRD) measurement confirmed that the as-grown PZNT91/9 single crystals are of pure perovskite structure. Electrical properties and thermal stabilization of PZNT91/9 crystals grown directly from melt exhibit different characters from those of PZNT91/9 crystals grown from flux, although segregation and the variation of chemical composition are not seriously confirmed by X-ray fluorescence analysis (XPS). The [0 0 1]-oriented PZNT91/9 crystals cut from the middle part of the as-grown crystal boules exhibit broad dielectric-response peaks at around 105 °C, accompanied by apparent frequency dispersion. The values of piezoelectric constant d₃₃, remnant polarization P_r, and induced strain are about 1800–2200 pC/N, 38.8 μC/cm², and 0.3%, respectively, indicating that the quality of PZNT crystals grown directly from melt can be comparable to those of PZNT91/9 single crystals grown from flux. However, further work deserves attention to improve the dielectric properties of PZNT crystals grown directly from melt. Such unusual characterizations of dielectric properties of PZNT crystals grown directly from melt are considered as correlating with defects, microinhomogeneities, and polar regions.     

Influence of γ irradiation on the optical and mechanical properties of langasite

The optical (transmission and circular dichroism) spectra and mechanical (Vickers microhardness and fracture toughness K _1c ) properties of langasite La₃Ga₅SiO₁₄ crystals have been studied after γ irradiation and exposure for a month. It is shown that, as a result of irradiation crystals become more transparent in the range 310–640 nm, nonstructural defects with the energies of excited states in the range 2.06–4.13 eV decay and new structural defects with the excited-state energies in the range 4.14–5.00 eV are formed. Irradiation does not lead to a change in microhardness, while the coefficient K _1c increases from 0.32 to 0.36 MPa m^1/2.     

The mechanism of formation of light-scattering centers in sapphire crystals grown in gas atmospheres

The mechanism of the formation of light-scattering centers in sapphire crystals grown by horizontal directed crystallization in gas atmospheres reducing with respect to the Al₂O₃ melt was studied. The experimental regularities here significantly differ from those observed upon formation of other conventional defects in sapphire crystals (vacancy pores, gas bubbles, and so on). It is shown that the known formation mechanisms of macroscopic ≥1 mm) inclusions in crystals are not acceptable in this case. Using the model of bulk crystallization is proposed to describe the obtained regularities.     

Structure of KTiOPO<Subscript>4</Subscript> single crystals grown by the top-seeded solution and spontaneous flux crystallization methods

This paper reports on the results of precision X-ray structural investigations of KTiOPO₄ single crystals grown by one method (crystallization from a solution in the melt) in two variants (the spontaneous formation of crystallization centers or top-seeded solution growth during slow cooling of saturated solution melts). It is shown that spontaneous flux crystallization leads to the formation of a larger number of defects. Potassium atoms are found to be disordered. The splitting of the K1 and K2 potassium positions is equal to 0.347(4) and 0.279(3) Å, respectively, for the crystals grown by the top-seeded solution method and 0.308(5) and 0.321(4) Å, respectively, for the crystals grown through the spontaneous flux crystallization.     

反蛋白石结构光子晶体制备技术

光子晶体是一种具有光子带隙的新型材料,由于其可以控制和抑制光子运动的特性,在光通讯领域具有广阔的应用前景.反蛋白石结构是光子晶体一种重要的结构,由于其制备方法简便、成本低廉而受到人们的普遍关注.本文在介绍目前常用的几种制备光子晶体技术的基础上,详细阐述了制备反蛋白石结构光子晶体的各种技术和方法、以及利用这些制备技术和方法在反蛋白石结构光子晶体上制备一维和二维缺陷的最新进展.     

Czochralski Growth of Potassium Lithium Niobate Single Crystals with Low Li Content and Their Characterization

Single crystalline and crack free potassium lithium niobate (KLN) single crystals with low Li content were grown by the Czochralski method. The crystal composition can be written as K_2.60Li_1.17Nb_5.44O₁₅ (=K_2.95Li_1.33Nb_6.17O₁₇) which contain relatively fewer Li ions than ferroelectric K₃Li₂Nb₅O₁₅ crystals. All experimental results show that the deficiency of the Li ions in the KLN crystals strongly influences their physical properties. Especially, the as‐grown crystals do not indicate any signature for a ferroelectric phase transition in contrast to the ferroelectric K₃Li₂Nb₅O₁₅ crystals. However, due to ionic conduction, the temperature dependence of the dielectric constant of such KLN‐2 crystals show a broad anomaly near 300°C. In addition, the existence of proton defects can be revealed by infrared absorption spectroscopy near 3500 cm^‐1 in as‐grown crystals.     

Microscopic studies on imperfections in selected YAB single crystals

The as‐grown surface and inner structures of undoped and Nd³⁺‐, Cr³⁺‐, V³⁺‐, Ce³⁺‐, Er³⁺ and Yb³⁺ – and (Er³⁺ + Yb³⁺) – doped yttrium aluminum borate (YAB) single crystals grown from (K₂Mo₃O₁₀ + B₂O₃) flux by spontaneous crystallization or top seeded solution growth (TSSG) technique, were investigated using optical and scanning electron microscopic and analytic chemical methods. Fine and rough growth hillocks of dislocational origin, growth layers, traces of inner planar defects and foreign phase crystalline debris were found and analyzed on the as‐grown faces of crystals. Irregular grains and regular block structures and foreign phase inclusions were observed and studied in the interior of the crystals. The chemical compositions measured by energy dispersive X‐ray spectrometry on perfect and imperfect micro regions are compared with those obtained by flame atomic absorption spectrometry on bulk crystals. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Studies on the growth and defects of La3Ga5SiO14 (LGS) crystals

New and high quality piezoelectric crystals La₃Ga₅SiO₁₄ (LGS) grown by the Czochralski method in a Platinum or Iridium crucible are reported in this paper. The growth defects in the LGS crystals were investigated by Transmission electron microscopy (TEM). It was found that cracks, inclusions, grain boundary and thermal stress in the LGS crystals. Their formation mechanisms and the method of eliminating these defects are discussed. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Real structure investigations of LiNbO3 single crystals grown by the flux method

The real structure of flux grown LiNbO₃ crystals is investigated by etching technique, X-ray topography, and optical polariscopic method. The main defects are microdomains, dislocations and minor impurities of V³⁺−ions. The crystals do not contain growth striations. The mean dislocation density is in the order of 10³ cm⁻². The main origin of the defects seems to be post-growth mechanical stress. The results are discussed in comparison to the real structure typically found in the case of Czochralski crystals.     

Investigation of radiation defects in electron irradiated Hg1−xCdxTe crystals using positron annihilation

The electron characteristics of defects in the initial and electron irradiated Hg_1−xCd_xTe (2–3 MeV, 10¹⁸ cm⁻², 300 K) crystals using the positron annihilation method have been investigated. The data of electric measurements are confirmed on connection of p-type conductivity with vacancy defects of metal sublattice initial crystals Hg_1−xCd_xTe. An analysis of correlation curves of irradiated crystals has shown a possibility of formation of associations of initial defects and radiation damages of vacancy type during radiation process. The presence of narrow component on correlation curves in the region of small angles is associated with formation of positronium states localized in the region of radiation defect complex of vacancy type. Identification of positron-sensitive defects with electrically active radiation induced ones has been carried out according to the results of isochronal annealing of irradiated crystals.     

Growth parameters for large diameter float zone silicon crystals

Factors that directly affect the ability to grow dislocation free float zone silicon crystals up to 80 mm in diameter have been experimentally determined. The highest yield is obtained for 80 mm diameter crystals by starting with 68 mm to 74 mm diameter poly crystal rod stock. Lower transport speeds for crystal growth of (111) orientation crystals were 3 to 4 mm/min and for (100), 2 to 3 mm/min. Rotation rates of both upper and lower shafts were found to have an effect on growth at the solid-liquid interface. Rates established for lower shaft were 6 to 8 rpm for the (111) crystals and 3 to 4 rpm for (100), counter-clock-wise. Upper rotation rates were 2 rpm on (111) crystals and 3 to 5 rpm on (100), clockwise. Seed orientation, which is critical, was held to within plus or minus $\text{1}\text{2}\text{°}$ of perfect orientation. The minimum seed growth length was 50 to 70 mm. To assist in reducing the side lobes on (111) dislocation free crystals, a cooling ring with a flow or argon was used. For best (100) growth the shape of the lower side of a one turn copper rf work coil was made conical. Six to ten dislocation free crystals in each orientation group were produced using these parameters.     

Recent Developments on High Curie Temperature PIN-PMN-PT Ferroelectric Crystals

Pb(In(0.5)Nb(0.5))O(3)-Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3) (PIN-PMN-PT) ferroelectric crystals attracted extensive attentions in last couple years, due to their higher usage temperatures range (> 30°C) and coercive fields (~5kV/cm), meanwhile maintaining similar electromechanical couplings (k(33)> 90%) and piezoelectric coefficients (d(33)~1500pC/N), when compared to their binary counterpart Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3). In this article, we reviewed recent developments on the PIN-PMN-PT single crystals, including the Bridgman crystal growth, dielectric, electromechanical, piezoelectric and ferroelectric behaviors as function of temperature and dc bias. Mechanical quality factor Q was studied as function of orientation and phase. Of particular interest is the dynamic strain, which related to the Q and d(33), was found to be improved when compared to binary system, exhibiting the potential usage of PIN-PMN-PT in high power application. Furthermore, PIN-PMN-PT crystals exhibit improved thickness dependent properties, due to their small domain size, being on the order of 1μm. Finally, the manganese acceptor dopant in the ternary crystals was investigated and discussed briefly in this paper.     

Electrical Conductivity of Phenoxazine-Iodine (2:3) and Phenothiazine-Iodine (2:3) Crystals

Abstract

Single crystals of phenoxazine-iodine (2 : 3) and phenothiazine-iodine (2 : 3) salts are found to be highly conducting ([sgrave] _R.T. = 5–20 ohm^?1 cm^?1). The observed deviation from the exponential temperature dependence of the conductivities is ascribed to the degenerate semiconducting phases or alternatively to the metallic phases with impurities. However, phenoxazine-iodine and phenothiazine-iodine are perfect semiconductors below 220° K with activation energies of 0.12 eV and 0.14 eV, respectively. The absorption features related with (phenoxazine)⁺ ₂ and (phenothiazine); cations are observed in the infrared spectra of the salts.     

钆钪铝石榴石单晶缺陷的微观形貌与成因研究

采用提拉法生长了2%Dy³⁺和1%Tb³⁺(原子数分数)共掺的钆钪铝石榴石激光晶体(Gd₃Sc₂Al₃O₁₂, GSAG)。研究了晶体(111)晶面的腐蚀缺陷形貌并对缺陷形成机理进行了解释,讨论了晶体缺陷的特征形貌与晶体结构之间的关系。表征并计算了晶体(111)晶面的维氏硬度和莫氏硬度,在0.2 kgf载荷和10 s保荷时间条件下,晶体(111)面的维氏硬度为1 267 kg/mm²,对应的莫氏硬度为7.3。研究结果对揭示混晶石榴石晶体中缺陷的成因和探索高品质晶体生长与加工工艺具有一定的参考价值。     

The mechanism of crystal growth in glass forming systems

A critical survey on experimental results on the mode of growth in simple glass forming melts is given, attention being mainly concentrated to data obtained at small undercoolings. Dissolution rates, change of interfacial conditions at constant undercooling as well as detailed structural determinations are considered as experimental evidences, complementary to a thorough analysis of growth-temperature dependences. For network glass formers (SiO₂, GeO₂, P₂O₅, Na₂B₄O₇) with melt structures, similar to those of the corresponding crystals, the normal mode of growth is typical. For a number of simple glass forming substances in which the crystallization is connected with a process of molecular reconstruction (NaPO₃, LiPO₃), spiral growth could be proved. Dislocation-free crystals of high entropy of melting glass forming substances (Na₂S₂O₃ · 5 H₂O, thymol) are obtained after prolonged annealing and growth in thin bored capillaries. Two-dimensional growth is verified for the resulting perfect crystals.     

X-ray diffraction in thick perfect crystals with deformed subsurface layers

The diffraction of X-rays in thick perfect crystals with deformed subsurface layers has been investigated. It was shown that the kinematic scattering of X-rays took place in deformed layers, while the dynamical one occurred in the perfect part of the crystal, -its bulk; also, that in beams of X-rays diffracted on surface defects, the role played by the second harmonics of the applied characteristic radiation MoKα₁ was essential.