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1.
High-quality type-Ⅱa gem diamond crystals are successfully synthesized in a NiToMn25Co5-C system by temperature gradient method (TGM) at about 5.5 GPa and 1560 K. Al and Ti/Cu are used as nitrogen getters respectively. While nitrogen getter Al or Ti/Cu is added into the synthesis system, some inclusions and caves tend to be introduced into the crystals. When Al is added into the solvent alloy, we would hardly gain high-quality type-Ⅱa diamond crystals with nitrogen concentration Nc 〈 1 ppm because of the reversible reaction of Al and N at high pressure and high temperature (HPHT). Piowever, when Ti/Cu is added into the solvent alloy, high-quality type-Ⅱa diamond crystals with Nc 〈 1 ppm can be grown by decreasing the growth rate of diamonds.  相似文献   

2.
Film bulk acoustic resonator (FBAR) with solidly mounted resonator (SMR)-type is carried out by rf magnetic sputtering. To fabricate SMR-type FBAR, alternative high and low acoustic impedance layers, Mo/Ti multilayer, are adopted as Bragg reflector deposited by dc magnetron sputtering. The influences of sputtering pressure, substrate temperature and sputtering power on the surface roughness of Bragg reflector layer are discussed. From the atom force microscopy (AFM) analysis, the surface roughness of the Bragg reflector is improved remarkably by controlling deposition conditions. Under the appropriate sputtering condition, AlN thin films with highly c-axis-preferred orientation are deposited by rf magnetron sputtering. The performance of fabricated Mo/Ti SMR shows that the electromechanical coupling coefficient is 3.89%, the series and parallel resonant frequencies appear at 2.49 and 2.53GHz, with their quality factors 134.2 and 97.6, respectively.  相似文献   

3.
Using three kinds of graphites with different graphitization degrees as carbon source and Fe-Ni alloy powder as catalyst, the synthesis of diamond crystals is performed in a cubic anvil high-pressure and high-temperature apparatus (SPD-6 × 1200). Diamond crystals with perfect hexoctahedron shape are successfully synthesized at pressure from 5.0 to 5.5GPa and at temperature from 1570 to 1770K. The synthetic conditions, nucleation, morphology, inclusion and granularity of diamond crystals are studied. The temperature and pressure increase with the increase of the graphitization degree of graphite. The quantity of nucleation and granularity ofdiamonds decreases with the increase of graphitization degree of graphite under the same synthesis conditions. Moreover, according to the results of the M6ssbauer spectrum, the composition of inclusions is mainly Fe3 C and Fe-Ni alloy phases in diamond crystals synthesized with three kinds of graphites.  相似文献   

4.
Self-seeded aluminium nitride (AlN) crystals are grown in tungsten and hot pressed boron nitride (HPBN) crucibles with different shapes by a sublimation method. The qualities of the AlN crystals are characterized by high-resolution transmission electronic microscopy (HRTEM), scanning electron microscopy (SEM) and Micro-Rarnan spectroscopy. The results indicate that the better quality crystals can be collected in conical tungsten crucible.  相似文献   

5.
The growth rate of diamond has been investigated for a long time and researchers have been attempting to enhance the growth rate of high-quality gem diamond infinitely. However, it has been found according to previous research results that the quality of diamond is debased with the increase of growth rate. Thus, under specific conditions, the growth rate of high-quality diamond cannot exceed a limited value that is called the limited growth rate of diamond. We synthesize a series of type Ib gem diamonds by temperature gradient method under high pressure and high temperature (HPHT) using the as-grown {100} face. The dependence of limited growth rate on growth conditions is studied. The results show that the limited growth rate increases when synthetic temperature decreases, also when growth time is prolonged.  相似文献   

6.
We study the Raman spectra of Bi4GeO12 crystal at different temperatures, as well as its melt. The structure characters of the single crystal, melt and growth solid-liquid boundary layer of BGO are investigated by their high-temperature Raman spectra for the first time. The rule of structure change of BGO crystal with increasing temperature is analysed. The results show that there exists [GeO4] polyhedral structure and Bi ion independently in BGO melt. The bridge bonds Bi-O-Bi and Bi-O-Ge appear in the crystal and at the boundary layer, but disappear in the melt. The structure of the growth solid-liquid boundary layer is similar to that of BGO crystal. In the melt, the long-range order structure of the crystal disappears. The thickness of the growth solid-liquid boundary layer of BGO crystal is about 50 μm.  相似文献   

7.
The study deals with numerical analysis of the morphological stability of a growing round particle with respect to harmonic perturbations of an arbitrary amplitude. Various growth regimes (from diffusion to kinetic-limited) are considered. It is found that the critical size of the particle stability decreases as the perturbation amplitude increases and tends to the value, which was determined analytically elsewhere using the maximum entropy production principle. This result is a crucial argument in support of the hypothesis that the entropy production can be used for analysis of a nonequilibrium phase transitions similarly to thermodynamic potentials in the case of equilibrium phase transitions.  相似文献   

8.
The effect of the addition of potassium thiocyanate on potassium dihydrogen phosphate (KDP) crystals, grown from aqueous solution by the temperature lowering method using a microcontroller based seed rotation technique has been studied. As part of nucleation studies, metastable zone width, induction period and crystal growth rate of additive added KDP are determined and analyzed with the pure system. Dielectric measurements were carried out on pure and doped crystals at various temperatures ranging from 313 to 423 K and compared. The crystalline perfection of the grown crystal was studied by the high resolution X-ray diffraction analysis. The crystal grown from additive added solution was subjected to structural, optical transmission, second harmonic generation and hardness studies and the effect of additive on pure system is investigated.  相似文献   

9.
We synthesize Y3Al5O12:Ce3+ (YAG:Ce3+) nanoparticles in the presence of citric acid by glycothermal method. Fourier transform infrared absorption spectroscopy measurement indicates that the intensity of the peak corresponding to carboxyl groups coordinating to the nanoparticles increases with increasing amount of citric acid. At the same time, the primary particle diameter decreases from 10.2 to 4.0 nm. In addition, the internal quantum efficiency of the photoluminescence (PL) due to the 4f-5d transition of Ce3+ increases from 22.0% to 40.1% with increasing amount of citric acid. Two kinds of PL decay lifetimes, 16-26 and 72-112 ns, are detected for YAG:Ce3+ nanoparticles, whereas the micron sized YAG:Ce3+ bulk shows the lifetime of 57 ns. We discuss these phenomena from the aspects of the coordination of citric acid and the incorporation of Ce3+ ions into the nanoparticles.  相似文献   

10.
YVO4:Bi3+,Eu3+ nanophosphors at a high Bi3+ concentration of 15 at% are synthesized from a Bi3+ source, nitrates of yttrium and europium(III), and sodium orthovanadate(V) by a low-temperature aqueous precipitation in the presence of citrate ions. When an ethylene glycol solution of bismuth(III) nitrate is used as a Bi3+ source, YVO4:Bi3+,Eu3+ nanophosphors of ∼20 nm in size crystallize during aging at 85 °C without any by-products where the contents of Bi3+ and Eu3+ incorporated into crystalline YVO4 are close to the respective nominal contents, as confirmed by transmission electron microscopy, X-ray diffractometry and X-ray fluorescent analysis. These nanophosphors show red emission corresponding to the f-f transition of Eu3+ under the excitation of Bi3+-V5+ charge transfer. When aging is continued after the completion of the crystallization, the photoluminescence intensity of nanophosphors reaches the constant value. This is the improved behavior in comparison to our previous work, where the photoluminescence intensity decreases after the prolonged aging because of the inhomogeneous doping of Bi3+ ions, and hence the concentration quenching.  相似文献   

11.
Gold nanorods with different aspect ratios are prepared in micells using a seeded growth method. Their extinction spectra are observed with an UV-visible spectrophotometer and analysed theoretically. It is known that there are two plasmon resonance peaks for gold nanorod corresponding to transverse and longitudinal plasmon resonance respectively. Moreover, the longitudinal plasmon resonance peak shifts to long wavelength when we increase the aspect ratio determined from TEM. Especially, we model the extinction spectrum using Gans' theory and compare it with our experimental result. Considering the aspect radios distribution of gold nanorods, it is found that longitudinal plasmon resonance peak will be wider than the nanorods with single aspect ratio, which is consistent with our experimental result. In addition, the effect of dielectric constant of surrounding medium is considered.  相似文献   

12.
Effects of NaN3 added in Fe-C system to synthesize nitric diamond at high pressure and high temperature are investigated. Diamond crystals with high nitrogen concentration are synthesized by the system of Fe-C and NaN3 additive at pressure 5.8 GPa and at temperatures 1750-1780 K for 15 min. The synthetic diamond crystals have a cubo-octahedral or octahedral shape with yellowish green or green colour. Some disfigurements are observed on the surfaces of most diamond crystals. The composition and content of inclusions formed by iron in diamond are changed and iron nitride is detected in diamond crystals synthesized with Fe-C-NaN3 additive. As the amount of NaN3 additive increases, Fe3C decreases and iron nitride increases with α-Fe being nearly constant. Moreover, the nitrogen concentrations in diamond crystals synthesized with 1.5 wt% NaN3 additive is up to 2250ppm in substitutional form.  相似文献   

13.
王楠 《中国物理快报》2008,25(11):4168-4170
Diffusion coefficient decides the solute diffusion length and is a critical parameter in the selection of microstructare scales and in governing microstructure transitions. Al-25 wt%Sm alloy is selected to reveal the impact of low diffusion coefficient on the eutectic instability, and the results are compared with those of Al-Cu alloys. Laser remelting experiments are performed and the transition growth velocity from euteetic to α-Al dendrite is examined. Compared with Al-Cu alloys, the eutectic instability takes place at a velocity more than one order of magnitude smaller. The theoretical calculation by the Trivedi-Magnin-Kurz (TMK) model also predicts that the eutectic will become instable at smaller growth velocity for Al-Sm alloy than Al-Cu alloy, which is ascribed to the low diffusion coefficient.  相似文献   

14.
The structural stability of InN thin films on 3C-SiC(0 0 1) substrate is systematically investigated based on an empirical interatomic potential, which incorporates electrostatic energy due to covalent bond charges and ionic charges. The calculated energy differences among coherently grown 3C-InN(0 0 1), 3C-InN(0 0 1) with misfit dislocations (MDs), and 2H-InN(0 0 0 1) imply that the coherently grown 3C-InN(0 0 1) is stable when the film thickness is less than 7 monolayers (MLs) while 2H-InN(0 0 0 1) is stabilized for the thickness beyond 8 MLs. This is because InN layers in 2H-InN(0 0 0 1) are fully relaxed by one MD. The analysis of atomic configuration at the 3C-InN(0 0 1)/3C-SiC(0 0 1) interfaces reveals that the coordination number of interfacial atoms is quite different from that in the bulk region. Thus, 3C-InN(0 0 1) with MDs on 3C-SiC(0 0 1) is always metastable over entire range of film thickness, consistent with the successful fabrication of 2H-InN(0 0 0 1) on 3C-SiC(0 0 1) by the molecular beam epitaxy. These results suggest that the mismatch in atomic arrangements at the interface crucially affects the structural stability of InN thin films on 3C-SiC(0 0 1) substrate.  相似文献   

15.
A facile synthesis route is described for the preparation of a poly-(o-aminophenol)-gold nanoparticle composite material by polymerization of o-aminophenol (AP) monomer using HAuCl4 as the oxidant. The synthesis was carried out in a methanol medium so that it could serve a dual solvent role, a solvent for both the AP and the water solution of HAuCl4. It was found that oxidative polymerization of AP leads to the formation of poly-AP with a diameter of 50±10nm, while the reduction of AuCl4 - results in the formation of gold nanoparticles (∼ 2nm). The gold nanoparticles were uniformly dispersed and highly stabilized throughout the macromolecular chain that formed a uniform metal-polymer composite material. The resultant composite material was characterized by means of different techniques, such as UV-vis, IR and Raman spectroscopy, which offered the information about the chemical structure of polymer, whereas electron microscopy images provided information regarding the morphology of the composite material and the distribution of the metal particles in the composite material.  相似文献   

16.
We have studied the CdTe/CdSe tetrapod-shaped nanocrystal heterostructures with the use of photoluminescence spectra measurements and time-correlated single photon counting technique. The tetrapods were grown to have CdTe arms with different thickness of the CdSe shell. We have observed non-exponential photoluminescence decay of excited tetrapod-nanocrystals and proposed kinetic theory based on the branched crystal morphology and on the assumption about a potential barrier in the junction point of tetrapod. Analysis of studied nanocrystal behavior gives an evidence for tetrapods to behave as four weakly connected quantum wells. This interesting effect might find applications in nanoelectronics.  相似文献   

17.
We have studied luminescence enhancement of zinc oxide (ZnO) nanoparticles with the average size of 30 nm on several metal surfaces at low temperatures. Bandedge luminescence originated from bound exciton (BE) annihilation is observed at 3.360 eV, and strongly depends on the kind and surface roughness of metal. The luminescence intensity is about 10 times larger for Ag surface than that for quartz surface. Furthermore, the luminescence increases remarkably when the roughness of Ag surface is almost the same as the particle size. The intensity ratio of the fast decay component to the slow one decreases for Ag surface compared with quartz. These results suggest that the luminescence enhancement is partially attributed to suppressing of the nonradiative recombination process in ZnO nanoparticles on metal surface.  相似文献   

18.
NiFe2O4/SiO2 nanocomposites were prepared using a sol–gel method with the addition of 3-aminopropyltrimethoxysilane (APS). Different phases and morphologies of NiFe2O4/SiO2 nanocomposites were obtained when different amounts of APS were used. The structural properties of the products were examined by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Sheet-like morphology was observed at higher molar ratio of APS to NiFe2O4, while spherical NiFe2O4/SiO2 nanoparticles separated from each other were formed at lower molar ratio of APS to NiFe2O4. The magnetic properties of the nanocomposites were also investigated, indicating that the interparticle interactions exhibit strong dependence on the molar ratio of APS to NiFe2O4.  相似文献   

19.
Temperature-dependent photoluminescence (PL) from Si nanodots with Al2O3 surface passivation layers was studied. The Si nanodots were grown by low pressure chemical vapor deposition and the Al2O3 thin films were prepared by atomic layer deposition (ALD), respectively. The BOE (Buffer-Oxide-Etch) treatment resulted in the damaged surface of Si nanodots and thus caused dramatic reduction in the PL intensity. Significant enhancement of the PL intensity from Si nanodots after the deposition of Al2O3 thin films was observed over a wide temperature range, indicating the remarkable surface passivation effect to suppress the non-radiative recombination at the surface of Si nanodots. The results demonstrated that the Al2O3 surface passivation layers grown by ALD are effectually applicable to nanostructured silicon devices.  相似文献   

20.
In this work, we used the hydrothermal method to synthesize Yb3+ and Er3+ ions doped cubic Y2O3 nanostructures, which is an upconversion luminescent material. Three distinct shapes such as nanotubes, nanospheres and nanoflakes formed in the products by adjusting the pH value of reacting solution. Powder X-ray diffraction analyses indicate that all the three nanostructures were pure cubic phase, while electron microscopy measurements confirm the formation of different morphologies. These nanostructures exhibit strong visible upconversion luminescence under the excitation of a 978-nm diode laser. The FTIR and fluorescent decay measurements at the size and morphology of sample changed from tubes to flakes indicate that the OH group is the origin of luminescent efficiency change. OH ions with high vibration frequency provide an efficient means to quench the luminescence. However, the relative intensity and pump-power dependence of the green and red emissions varies with the three nanostructures possessing different size and morphology.  相似文献   

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