Mode control in a high gain relativistic klystron amplifier with3 GW output power

Higher mode excitation is very serious in the relativistic klystron amplifier, especially for the high gain relativistic amplifier working at tens of kilo-amperes. The mechanism of higher mode excitation is explored in the PIC simulation and it is shown that insufficient separation of adjacent cavities is the main cause of higher mode excitation. So RF lossy material mounted on the drift tube wall is adopted to suppress higher mode excitation. A high gain S-band relativistic klystron amplifier is designed for the beam current of 13 kA and the voltage of 1 MV. PIC simulation shows that the output power is 3.2 GW when the input power is only 2.8 kW.     

高增益相对论速调管放大器自激振荡的分析与抑制

通过二维和三维粒子模拟研究了高增益相对论速调管放大器中高次模式的激励机理,两者结果的一致性排除了高次非对称模式激励的影响。由此建立了高次模式起振的理论模型,给出了高次模式的起振电流。并通过在器件内加入微波衰减材料来抑制高次模式自激振荡,模拟获得了1.95GW的微波输出,增益62.8dB。     

S波段3 GW 相对论速调管放大器的设计

利用速调管放大器中间腔可以提高器件放大增益,并达到降低微波注入功率的要求,同时针对高功率微波相对论速调管放大器的特点,建立了一个带有两个中间腔的S波段相对论速调管放大器,采用特殊结构克服了多个中间腔引入的高次模影响,模拟上实现了在kW量级微波注入条件下,基波电流调制深度达到80%,输出微波3.3 GW。     

衰减材料对高增益相对论速调管自激振荡的抑制

在高增益相对论速调管放大器中,自激振荡严重影响器件的正常工作并导致脉冲缩短。通过粒子模拟研究了高次模式自激振荡的激励机制,并提出在器件内加入微波衰减材料来抑制该类自激振荡。详细研究了衰减材料的电导率和几何参数与高次模式衰减常数的关系,并开展了微波衰减体的冷测实验。冷测表明微波衰减体对高次模式的衰减达11.25 dB,其性能满足器件实验要求,可以用于高增益相对论速调管的热腔实验。     

S波段长脉冲相对论速调管放大器中杂模振荡导致的脉冲缩短抑制研究

研究了相对论速调管放大器中的脉冲缩短问题.分析表明杂模振荡是引起脉冲缩短的重要原因.利用粒子模拟对振荡的模式进行了分析,研究了振荡的机理,在粒子模拟中利用吸收介质对杂模实现了有效的抑制.最后,在实验中解决了相对论速调管放大器中的脉冲缩短问题,在输出微波峰值功率约为920 MW时将脉宽由77 ns提高到137 ns.     

Mode control in a high-gain relativistic klystron amplifier

Middle cavities between the input and output cavity can be used to decrease the required input RF power for the relativistic klystron amplifier.Meanwhile higher modes,which affect the working mode,are also easy to excite in a device with more middle cavities.In order for the positive feedback process for higher modes to be excited,a special measure is taken to increase the threshold current for such modes.Higher modes' excitation will be avoided when the threshold current is significantly larger than the beam current.So a high-gain S-band relativistic klystron amplifier is designed for the beam of current 5 kA and beam voltage 600 kV.Particle in cell simulations show that the gain is 1.6×105 with the input RF power of 6.8 kW,and that the output RF power reaches 1.1 GW.     

基于离轴高增益速调管的X波段高功率合成技术研究

为了克服强流高增益速调管放大器中的自激振荡和适应低阻抗脉冲功率源发展的需要,利用高阻抗X波段五腔高增益速调管放大器进行了离轴八注八管高增益速调管功率合成技术研究,在频率为9.47 GHz、模拟输出功率为284 MW、增益为51.6 d B和效率为35.5%条件下,该器件整管微波输出稳定.在三维模型中,在离轴54 mm条件下该器件的微波输出特性稳定.基于实验室现有4.5 T(长1.1 m,室温孔径为150 mm)超导磁体,进行了八注八管高增益速调管的整管模拟,每个器件实现284 MW的微波输出.最后,为实现GW级功率输出,利用HFSS软件设计了用于离轴八注八管高增益速调管功率合成的八合一功率合成器,将该合成器同八注八管高增益速调管结合,模拟得到功率为1.84 GW、增益为50.7 d B、效率为28.8%的微波输出.     

大间隙C波段三轴速调管束流调制模拟研究

利用SUPERFISH软件设计了一种兼具大间隙速调管及三轴速调管优势的C波段大间隙三轴速调管,对所设计大间隙三轴速调管的束流传输及调制情况进行了2维粒子模拟研究。模拟结果表明,三轴速调管设计需要特别关注"模式泄露"问题以及谨慎选择内导体接地支撑杆的位置,以获得稳定传输的电子束。综合考虑上述两个条件,在440 kV的二极管电压下,5.0 GHz,200 MW的强注入功率可以获得11.8 kA的基频调制积分电流,束流调制深度88%,调制电流峰峰值大于40 kA,且调制电流具有良好的频率及相位稳定性。在此基础上,初步模拟得到了大于2.0 GW的平均微波功率,平均效率约33.8%。     

高增益相对论速调管放大器相位特性的模拟与实验研究

为实现高功率微波的相干功率合成, 开展了S波段高增益相对论速调管放大器输出微波相位特性的粒子模拟和实验研究, 粒子模拟与实验结果均表明电子回流是影响输出微波相位特性的主要因素. 在有效控制电子回流的情况下, 实验实现输出微波相位抖动小于± 10°, 锁相时间达90 ns. 以此计算, 若相位抖动在± 10° 内满足均匀分布, 十台该高增益相对论速调管放大器的功率合成效率将大于99%.     

Ku波段径向线相对论速调管放大器的仿真与设计

高频段相对论速调管放大器(RKA)是近年来高功率微波领域的研究热点之一,其发展主要受限于模式竞争、相位抖动和效率偏低等问题。设计了一种径向线RKA,主要由输入腔、两组非均匀双间隙群聚腔和三间隙提取腔等四部分构成。通过比较单双间隙群聚腔与电子束互作用的耦合系数,说明了非均匀双间隙群聚腔具备对电子束较强的调制能力。前端加载TEM模式反射器的非均匀双间隙群聚腔的工作在TM01-π模式,Q值较大,有利于谐振腔之间的能量隔离。采用两组非均匀双间隙群聚腔级联的方式,在注入功率仅10 kW情况下,实现短漂移管长度下电子束深度群聚达110%。粒子模拟结果表明,该器件具有效率高的优点,在电子束电压400 kV,电流5 kA,磁场强度0.4 T条件下,得到功率825 MW,频率14.25 GHz,效率41%的微波输出。     

Mode control in a high-gain relativistic klystron amplifier

Middle cavities between the input and output cavity can be used to decrease the required input RF power for the relativistic klystron amplifier. Meanwhile higher modes, which affect the working mode, are also easy to excite in a device with more middle cavities. In order for the positive feedback process for higher modes to be excited, a special measure is taken to increase the threshold current for such modes. Higher modes＇ excitation will be avoided when the threshold current is significantly larger than the beam current. So a high-gain S-band relativistic klystron amplifier is designed for the beam of current 5 kA and beam voltage 600 kV. Particle in cell simulations show that the gain is 1.6 × 10^5 with the input RF power of 6.8 kW, and that the output RF power reaches 1.1 GW.     

S波段相对论速调管振荡器研究

介绍利用20 GW加速器二极管产生的电子束源,开展S波段相对论速调管振荡器(RKO)的理论设计、粒子模拟和实验研究的情况.该RKO采用3个紧密耦合的圆柱腔作为振荡腔,束流经过一段漂移管的群聚后采用三轴输出腔提取微波.该振荡器具有起振时间快、结构紧凑、束波转换效率较高等优点.采用无箔空心阴极和0.9 T的恒流源磁场引出的电压1 MV、束流13kA、脉宽40 ns的环形电子束驱动RKO,单次运行输出了3.5 GW的辐射微波功率,效率27％,频率2.86 GHz,瞬时带宽2%;脉冲重复频率20 Hz运行时,输出 关键词： 相对论速调管 振荡器 三轴提取腔 高功率微波     

X波段相对论大功率速调管放大器的高频结构模拟研究

采用MAGIC 2.5D模拟软件,建立了X波段11.424GHz相对论大功率速调管放大器的高频结构模型。该模型由5个简单药盒型谐振腔组成,包括1个输入腔、3个中间腔和1个输出腔。研究了该模型的高频特性,初步设计漂移管及各谐振腔结构参数,再结合热腔模拟,研究了输入腔的吸收匹配问题,依据各腔体对基波电流逐级调制情况,优化配合各腔体的间隙等结构参数,从而获得电子束的最佳调制状态,最后通过调节外加均匀磁场大小获得百MW功率输出,结果表明:在加速电压520kV、束电流460A、外加磁场0.4T的条件下,当注入信号功率为1kW时,基波电流调制深度达162%,最终输出功率105MW,效率43.5%,增益50dB。     

HEM11 mode magnetically insulated transmission line oscillator： Simulation and experiment

A novel magnetically insulated transmission line oscillator （MILO） in which a modified HEM11 mode is taken as its main interaction mode （HEM11 mode MILO） is simulated and experimented in this paper. The excitation of the oscillation mode is made possible by carefully adjusting the arrangement of each resonant cavity in a two-dimensional slow wave structure. The special feature of such a device is that in the slow-wave-structure region, the interaction mode is HEM11 mode which is a TM-like one that could interact with electron beams effectively; and in the coaxial output region, the microwave mode is TE11 mode which has a favourable field density pattern to be directly radiated. Employing an electron beam of about 441 kV and 39.7 kA, the HEM11 mode MILO generates a high power microwave output of about 1.47 GW at 1.45 GHz in particle-in-cell simulation. The power conversion efficiency is about 8.4 % and the generated microwave is in a TEll-like circular polarization mode. In a preliminary experiment investigation, high power microwave is detected from the device with a frequency of 1.46 GHz, an output energy of 43 J 47 J, and a pulse duration of 44 ns-49 ns when the input voltage is 430 kV450 kV, and the diode current is 37 kA-39 kA.     

Ka波段带状注相对论扩展互作用速调管放大器的分析与设计

带状注相对论扩展互作用速调管放大器是一种高功率、高频率的微波毫米波放大型器件, 具有广阔的应用前景. 本文分析了扩展互作用结构多间隙谐振腔的渡越时间效应, 推导了2π模场情况下谐振腔的能量交换系数和电子负载电导, 且通过计算表明工作在2π模式三间隙腔的电子负载电导是单间隙腔的9倍左右, 多间隙结构有利于提高器件效率. 利用三维粒子仿真软件, 对工作在Ka波段的带状注相对论扩展互作用速调管放大器进行了模拟研究, 采用宽高比为30:1的带状电子束以降低空间电荷效应, 在电子束电压为500 kV, 束流为1 kA, 轴向引导磁感应强度为0.8 T的情况下, 器件输出微波功率为190 MW, 频率为40 GHz, 器件效率为38%, 器件增益为69 dB.     

High-power terahertz pulse sensor with overmoded structure

Based on the hot electron effect in a semiconductor, an overmoded resistive sensor for 0.3-0.4 THz band is investi-gated. The distribution of electromagnetic field components, voltage standing wave ratio （VSWR）, and the average electric field in the silicon block are obtained by using the three-dimensional finite-difference time-domain （FDTD） method. By adjusting several factors （such as the length, width, height and specific resistance of the silicon block） a novel sensor with optimal structural parameters that can be used as a power measurement device for high power terahertz pulse directly is proposed. The results show that the sensor has a relative sensitivity of about 0.24 kW 1, with a fluctuation of relative sensitivity of no more than ±22%, and the maximum of VSWR is 2.74 for 0.3-0.4 THz band.     

Relativistic Calculations for Be-like Iron

Relativistic configuration interaction calculations for the states of 1s^22s^2, 1s^22s3l （l = s,p,d） and 1s^22p31 （l=s,p,d） configurations of iron are carried out using relativistic configuration interaction （RCI） and multi-configuration Dirac-Fock （MCDF） method in the active interaction approach. In the present calculation, a large-scale configuration expansion was used in describing the target states. These results are extensively compared with other available calculative and experimental and observed values, the corresponding present results are in good agreement with experimental and observed values, and some differences are found with other available calculative values. Because more relativistic effects are considered than before, the present results should be more accurate and reliable.     

Multireference configuration interaction study on spectroscopic properties of low-lying electronic states of As2 molecule

The potential energy curves (PECs) of four electronic states (X1Σ+g , e3△u , a 3 Σ-u , and d 3Πg ) of an As 2 molecule are investigated employing the complete active space self-consistent field (CASSCF) method followed by the valence internally contracted multireference configuration interaction (MRCI) approach in conjunction with the correlation-consistent aug-cc-pV5Z basis set. The effect on PECs by the relativistic correction is taken into account. The way to consider the relativistic correction is to employ the second-order Douglas-Kroll Hamiltonian approximation. The correction is made at the level of a cc-pV5Z basis set. The PECs of the electronic states involved are extrapolated to the complete basis set limit. With the PECs, the spectroscopic parameters (Te , Re , ωe , ωexe , ωeye , αe , βe , γe , and Be ) of these electronic states are determined and compared in detail with those reported in the literature. Excellent agreement is found between the present results and the experimental data. The first 40 vibrational states are studied for each electronic state when the rotational quantum number J equals zero. In addition, the vibrational levels, inertial rotation and centrifugal distortion constants of d 3Πg electronic state are reported which are in excellent agreement with the available measurements. Comparison with the experimental data shows that the present results are both reliable and accurate.     

High-efficiency S-band harmonic tuning GaN amplifier

In this paper, we present a high-efficiency S-band gallium nitride （GaN） power amplifier （PA）. This amplifier is fabri- cated based on a self-developed GaN high-electron-mobility transistor （HEMT） with 10 mm gate width on SiC substrate. Harmonic manipulation circuits are presented in the amplifier. The matching networks consist of microstrip lines and discrete components. Open-circuited stub lines in both input and output are used to tune the 2rid harmonic wave and match the GaN HEMT to the highest efficiency condition. The developed amplifier delivers an output power of 48.5 dBm （70 W） with a power-added efficiency （PAE） of 72.2% at 2 GHz in pulse condition. When operating at 1.8-2.2 GHz （20% relative bandwidth）, the amplifier provides an output power higher than 48 dBm （,-~ 65 W）, with a PAE over 70% and a power gain above 15 dB. When operating in continuous-wave （CW） operating conditions, the amplifier gives an output power over 46 dBm （40 W） with PAE beyond 60% over the whole operation frequency range.     

Charge Densities of Unstable Nuclei with Electron Scattering

Relativistic mean-field theory and phase-shift analysis are combined together to investigate the elastic Coulomb scattering between electrons and unstable nuclei. Electron scattering at several different energies is studied and compared, in order to see the energy dependence of electron-nucleus scattering. It is shown that electron scattering at 200 MeV or 300 MeV can be used to reveal electron-nucleus scattering information around the first diffraction minimum. Shifts in opposite directions are obtained for the first diffraction minima of the electron scattering off the ground and first excited states of ^17F with ^16O as reference, and similar effects are obtained for ^18Ne. Besides, some neutron-rich N = 8 isotones are also studied. Results show that electron scattering will be very useful and important in studying both proton- and neutron-rich nuclei in the future.