An analysis of undulator optimization in self-seeding free electron lasers

A simple analysis is given for the optimum length of undulator in a self-seeding free electron laser （FEL）. The obtained relations show the correlation between the undulator length and the system parameters. The power required for the seeding in the second part of the undulator and the overall efficiency of monochromatizating the seeding determine the length of the first part of the undulator; the magnitude of seeding power dominates the length of the second part of the undulator; the whole length of the undulator in a self-seeding FEL is determined by the overall efficiency for getting coherent seed, and is about half as long again as that of SASE, not including the dispersion section. The requirement of the dispersion section strength is also analyzed.     

An analysis of undulator optimization in self-seeding free electron lasers

A simple analysis is given for the optimum length of undulator in a self-seeding free electron laser(FEL).The obtained relations show the correlation between the undulator length and the system parameters.The power required for the seeding in the second part of the undulator and the overall efficiency of monochromatizating the seeding determine the length of the first part of the undulator;the magnitude of seeding power dominates the length of the second part of the undulator;the whole length of the undulator in a self-seeding FEL is determined by the overall efficiency for getting coherent seed,and is about half as long again as that of SASE,not including the dispersion section.The requirement of the dispersion section strength is also analyzed.     

Physical design of a wavelength tunable fully coherent VUV source using a self-seeding free electron laser

In order to meet the requirements of the synchrotron radiation users, a fully coherent VUV free electron laser (FEL) has been preliminarily designed. One important goal of this design is that the radiation wavelength can be easily tuned in a broad range (70—170 nm). In the light of the users' demand and our actual conditions, the self-seeding scheme is adopted for this proposal. Firstly, we attempted to fix the electron energy and only changed the undulator gap to vary the radiation wavelength; however, our analysis implies that this is difficult because of the great difference of the power gain length and FEL efficiency at different wavelengths. Therefore, we have considered dividing the wavelength range into three subareas. In each subarea, a constant electron energy is used and the wavelength tuning is realized only by adjusting the undulator gap. The simulation results show that this scheme has an acceptable performance.     

FEL polarization control studies on Dalian coherent light source

The polarization switch of a free-electron laser （FEL） is of great importance to the user scientific community. In this paper, we investigate the generation of controllable polarization FEL from two well-known approaches for Dalian coherent light source, i.e., crossed planar undulator and elliptical permanent undulator. In order to perform a fair comparative study, a one-dimensional time-dependent FEL code has been developed, in which the imperfection effects of an elliptical permanent undulator are taken into account. Comprehensive simulation results indicate that the residual beam energy chirp and the intrinsic FEL gain may contribute to the degradation of the polarization performance for the crossed planar undulator. Tile elliptical permanent undulator is not very sensitive to the undulator errors and beam imperfections. Meanwhile, with proper configurations of the main planar undulators and additional elliptical pernmuent undulator section, circular polarized FEL with pulse energy exceeding 100 bt.J could be achieved at Dalian coherent light source.     

Charge ordering modulations in a Bi0.4Ca0.6MnO3 film with a thickness of 110 nm

The low temperature sample stage in a transmission electron microscope is used to investigate the charge ordering behaviours in a Bi0.4Ca0.6MnO3 film with a thickness of 110 nm at 103 K. Six different types of superlattice structures are observed using the selected-area electron diffraction （SAED） technique, while three of them match well with the modulation stripes in high-resolution transmission electron microscopy （HRTEM） images. It is found that the modulation periodicity and direction are completely different in the region close to the Bi0.4Ca0.6MnO3/SrTiO3 interface from those in the region a little further from the Bi0.4Ca0.6MnO3/SrTiO3 interface, and the possible reasons for this are discussed. Based on the experimental results, structural models are proposed for these localized modulated structures.     

Electron Acceleration and Bunch Generation by Intense Femtosecond Laser Pulse in Preplasma of a Target

We present analytical studies of electron acceleration in the low-density preplasma of a thin solid target by an intense femtosecond laser pulse. Electrons in the preplasma are trapped and accelerated by the ponderomotive force as well as the wake field. Two-dimensional particle-in-cell simulations show that when the laser pulse is stopped by the target, electrons trapped in the laser pules can be extracted and move forward inertially. The energetic electron bunch in the bubble is unaffected by the reflected pulse and passes through the target with small energy spread and emittance. There is an optimal preplasma density for the generation of the monoenergetic electron bunch if a laser pulse is given. The maximum electron energy is inverse proportion to the preplasma density.     

De Haas-van Alphen Effect of Free Electron Gas Revisited

The free electron gas in a uniform magnetic field at low temperature is restudied. The grand partition function previously obtained by Landau＇s quantitative calculation contains three parts, which are all approximate. An improved calculation is presented, in which two of the three parts are obtained in exact forms. A simple remedy for Landau and Lifshitz＇s qualitative calculation in the textbook is also given, which turns the qualitative result into the same one as obtained by the improved quantitative calculation. The chemical potential is solved approximately and the thermodynamic quantities are caiculated explicitly in both a weak field and a strong field. The thermodynamic quantities in a strong field obtained here contain both non-oscillating and oscillating corrections to the corresponding results derived from Landau＇s grand partition function. In particular, Landau＇s grand partition function is not sufficiently accurate to yield our nonzero results for the specific heat and the entropy. An error in the Laplace-transform method for the problem is corrected. The results previously obtained by this method are also improved.     

Influence of a two-dimensional electron gas on current—voltage characteristics of Al0.3{Ga}0.7 N/GaN high electron mobility transistors

The J-V characteristics of AltGa1 tN/GaN high electron mobility transistors（HEMTs） are investigated and simulated using the self-consistent solution of the Schro dinger and Poisson equations for a two-dimensional electron gas（2DEG） in a triangular potential well with the Al mole fraction t = 0.3 as an example.Using a simple analytical model,the electronic drift velocity in a 2DEG channel is obtained.It is found that the current density through the 2DEG channel is on the order of 10^13 A/m^2 within a very narrow region（about 5 nm）.For a current density of 7 × 10^13 A/m62 passing through the 2DEG channel with a 2DEG density of above 1.2 × 10^17 m^-2 under a drain voltage Vds = 1.5 V at room temperature,the barrier thickness Lb should be more than 10 nm and the gate bias must be higher than 2 V.     

线极化静电摇摆器自由电子激光的理论分析

给出一种结构简单,具有自聚焦能力的短周期线极化静电摇摆器的场分析,并对相应的自由电子激光理论和自聚焦原理作了初步探讨。     

Commissioning of electron cooling in CSRe

The 400 MeV/u 12C6＋ ion beam was successfully cooled by the intensive electron beam near 1 A in CSRe.The momentum cooling time was estimated near 15 s.The cooling force was measured in the cases of difierent electron beam profiles,and the difierent angles between the ion beam and electron beam.The lifetime of the ion beam in CSRe was over 80 h.The dispersion in the cooling section was confirmed as positive close to zero.The beam sizes before cooling and after cooling were measured by the moving screen.The beam diameter after cooling was about 1 mm.The bunch length was measured with the help of the signals from the beam position monitor.The difiusion was studied in the absence of the electron beam.     

Spin-Dependent Electron Properties of a Triple-Terminal Quantum Dot Structure

Electron transport properties of a triple-terminal Aharonov-Bohm interferometer are theoretically studied. By applying a Rashba spin-orbit coupling to a quantum dot locally, we find that remarkable spin polarization comes about in the electron transport process with tuning the structure parameters, i.e., the magnetic flux or quantum dot levels. When the quantum dot levels are aligned with the Fermi level, there only appear spin polarization in this structure by the presence of an appropriate magnetic flux. However, in absence of magnetic flux spin polarization and spin separation can be simultaneously realized with the adjustment of quantum dot levels, namely, an incident electron from one terminal can select a specific terminal to depart from the quantum dots according to its spin state.     

Preliminary design and multipacting simulation of a SRF quarter wave electron gun at Peking University

Peking University is designing a new SRF gun that is composed of a quarter wave resonator （QWR） and an elliptical cavity. Compared to the elliptical cavity, the QWR is sufficiently compact at the same frequency and its electric field is quasi-DC. The RF parameters are determined by optimization of QWR cavity structure and the possible multipacting locations are analyzed by 2D MP simulation. The simulation results show that multipacting is not a critical issue for our optimized cavity structure.     

A double toroidal analyzer for scanning probe electron energy spectrometer

An ultra-high vacuum(UHV) compatible electron spectrometer employing a double toroidal analyzer has been developed. It is designed to be combined with a custom-made scanning tunneling microscope(STM) to study the spatially localized electron energy spectrum on a surface. A tip–sample system composed of a piezo-driven field-emission tungsten tip and a sample of highly ordered pyrolytic graphite(HOPG) is employed to test the performance of the spectrometer.Two-dimensional images of the energy-resolved and angle-dispersed electrons backscattered from the surface of HOPG are obtained, the performance is optimized and the spectrometer is calibrated. A complete electron energy loss spectrum covering the elastic peak to the secondary electron peaks for the HOPG surface, acquired at a tip voltage of-140 V and a sample current of 0.5 pA, is presented, demonstrating the viability of the spectrometer.     

Investigation of a method to calculate spontaneous radiation spectra from relativistic electrons in undulators

Undulators are key devices to produce brilliant synchrotron radiation at the synchrotron radiation facilities. In this paper we present a numerical computing method, including the computing program that has been developed to calculate the spontaneous radiation emitted from relativistic electrons in undulators by simulating the electrons＇ trajectory. The effects of electron beam emittance and energy spread have also been taken into account. Comparing with other computing methods available at present, this method has a few advantages with respect to several aspects. It can adopt any measured or arbitrarily simulated 3D magnetic field and arbitrary electron beam pattern for the calculation and it＇s able to analyze undulators of any type of magnetic structure. It＇s expected to predict precisely the practical radiation spectrum. The calculation results of a short period in-vacuum undulator and an Elliptically Polarized Undulator （EPU） at Shanghai Synchrotron Radiation Facility （SSRF） are presented as examples.     

Theoretical research on electron beam modulation in a field-emission cold cathode electron gun

In order to develop miniaturized and integrated electron vacuum devices, the electron beam modulation in a field- emission （FE） electron gun based on carbon nanotubes is researched. By feeding a high-frequency field between the cathode and the anode, the steady FE electron beam can be modulated in the electron gun. The optimal structure of the electron gun is discovered using 3D electromagnetism simulation software, and the FE electron gun is simulated by PIC simulation software. The results show that a broadband （74-114 GHz） modulation can be achieved by the electron gun with a rhombus channel, and the modulation amplitude of the beam current increases with the increases in the input power and the electrostatic field.     

Effects of ultra-strong magnetic field on electron capture rates of 55C0 and 56Ni in the magnetar surrounding

The electron capture rates of 55Co and 56Ni in the ultra-strong magnetic field at four typical temperature- density points have been calculated using the nuclear shell model and Landan energy levels quantized approximate correction. The results show that the electron capture rates of 55Co and 56Ni are increased greatly in the ultra-strong magnetic field, and even exceed two orders of magnitude in the range from 4.414×10^13G to 2.207×10^27 G. The change rate of electron abundance, ye, of 55Co and 56Ni under the condition of B=4.414×10^15G in the magnetar surrounding has been calculated and discussed, the proportions of ye of 55Co and 56Ni in the total Ye have been reduced by 50 percent in all more than the condition without a magnetic field.     

Design and optimization of an electromagnet undulator

In this paper we discuss the design and optimization of an electromagnet undulator. A short period electromagnet undulator has been reported and used for free electron laser experiment under the approximation of infinite permeability of the lamination core. Here we remove this approximation and present analytical expressions for an alternate design concept on the electromagnet undulator.     

Forward and reverse electron transport properties across a CdS/Si multi-interface nanoheterojunction

The electron transport behavior across the interface plays an important role in determining the performance of op- toelectronic devices based on heterojunctions. Here through growing CdS thin film on silicon nanoporous pillar array, an untraditional, nonplanar, and multi-interface CdS/Si nanoheterojunction is prepared. The current density versus voltage curve is measured and an obvious rectification effect is observed. Based on the fitting results and model analyses on the forward and reverse conduction characteristics, the electron transport mechanism under low forward bias, high forward bias, and reverse bias are attributed to the Ohmic regime, space-charge-limited current regime, and modified Poole-Frenkel regime respectively. The forward and reverse electrical behaviors are found to be highly related to the distribution of inter- facial trap states and the existence of localized electric field respectively. These results might be helpful for optimizing the preparing procedures to realize high-performance silicon-based CdS optoelectronic devices.     

An X-ray imaging device based on a GEM detector with delay-line readout

An X-ray imaging device based on a triple-GEM （Gas Electron Multiplier） detector, a fast delay-line circuit with 700 MHz cut-off frequency and two dimensional readout strips with 150 μm width on the top and 250 μm width on the bottom, is designed and tested. The localization information is derived from the propagation time of the induced signals on the readout strips. This device has a good spatial resolution of 150 μm and works stably at an intensity of 105 Hz/mm2 with 8 keV X-rays.     

Electron beam density imaging system at Beam study using a portable slit the Shanghai Electron Ion Trap

In this work, a portable slit imaging system is developed to study both the electron beam diameter and the profile of the newly developed Shanghai Electron Beam Ion Trap （Shanghai EBIT）. Images are detected by a charge coupled device （CCD） sensitive to both X rays and longer wavelength photons （up to visible）. Large scale ray tracings were conducted for correcting the image broadening effects caused by the finite slit width and the finite width of the CCD pixels. A numerical de-convolution method was developed to analyse and reconstruct the electron beam density distribution in the EBIT. As an example of the measured beam diameter and current density, the FWHM （full width at half maximum） diameter of the electron beam at 81 keV and 120 mA is found to be 76.2 μm and the density 2.00 × 10^3 A.cm-2, under a magnetic field of 3 T, including all corrections.