The effect of different substrate temperatures on the structure and luminescence properties of Y2O3:Bi3+ thin films

Y₂O₃:Bi³⁺ phosphor thin films were prepared by pulsed laser deposition in the presence of oxygen (O₂) gas. The microstructure and photoluminescence (PL) of these films were found to be highly dependent on the substrate temperature. X-ray diffraction analysis showed that the Y₂O₃:Bi³⁺ films transformed from amorphous to cubic and monoclinic phases when the substrate temperature was increased up to 600 °C. At the higher substrate temperature of 600 °C, the cubic phase became dominant. The crystallinity of the thin films, therefore, increased with increasing substrate temperatures. Surface morphology results obtained by atomic force microscopy showed a decrease in the surface roughness with an increase in substrate temperature. The increase in the PL intensities was attributed to the crystallinity improvement and surface roughness decrease. The main PL emission peak position of the thin films prepared at substrate temperatures of 450 °C and 600 °C showed a shift to shorter wavelengths of 460 and 480 nm respectively, if compared to the main PL peak position of the powder at 495 nm. The shift was attributed to a different Bi³⁺ ion environment in the monoclinic and cubic phases.     

The effects of oxygen concentration on ultraviolet luminescence of ZnO films by sol–gel technology and annealing

ZnO thin films were successfully deposited on SiO₂/Si substrate using the sol–gel technique and annealed in various annealing atmospheres at 900 °C by rapid thermal annealing (RTA). X-ray diffraction revealed the (002) texture of ZnO thin films. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed that the grains of the ZnO thin film were enlarged and its surface was smoothed upon annealing in oxygen. PL measurement revealed two ultraviolet (UV) luminescence bands at 375 and 380 nm. The intensity of the emission peak at 380 nm became stronger as the concentration of oxygen in the annealing atmosphere increased. The X-ray photoelectron spectrum (XPS) demonstrated that a more stoichiometric ZnO thin film was obtained upon annealing in oxygen and more excitons were generated from the radiative recombination carriers consistently. Additionally, the UV intensity increased with the thickness of ZnO thin film.     

The influence of annealing on electrochromic properties of Al–B–NiO thin films prepared by sol–gel

Al–B–NiO thin films were prepared using the sol–gel process and deposited on Indium tin oxide (ITO)-coated glass substrates via the dip-coating technique for the purpose of developing high performance electrochromic materials. The influence of the anneal on the structural and electrochromic properties of Al–B–NiO films is reported. Thermogravimetry (TG) and differential thermal analysis (DTA), cyclic voltammetry measurements (CV), UV spectrophotometer, atomic force microscopy (AFM) and X-ray diffraction (XRD) have been used to investigate the structural and electrochromic properties. The thickness of the films was determined by spectrophotometric analysis in 350–1,000 nm wavelength. Results showed that the Al–B–NiO thin films treated at high temperature have both the excellent electrochromic properties and good reversibility. The transmittance change (ΔT) of the film treated at 500 °C reaches still ~50% at the wavelength of 550 nm. The microstructure and the surface morphology were considered to play an important role in the electrochromic properties with different temperatures.     

Mesoporous and nanocrystalline sol–gel derived NiTiO3 at the low temperature: Controlling the structure,size and surface area by Ni:Ti molar ratio

Nanocrystalline nickel titanate (NiTiO₃) thin films and powders with mesoporous structure were produced at the low temperature of 500 °C by a straightforward particulate sol–gel route. The sols were prepared in various Ni:Ti molar ratios. X-ray diffraction and Fourier transform infrared spectroscopy revealed that the powders contained mixtures of the NiTiO₃ and NiO phases, as well as the anatase-TiO₂ and the rutile-TiO₂ depending on the annealing temperature and Ni:Ti molar ratio. Moreover, it was found that Ni:Ti molar ratio influences the preferable orientation growth of the nickel titanate, being on (202) planes for the nickel dominant powders (Ni:Ti ≥ 75:25) and on (104) planes for the rest of the powders (Ni:Ti: ≤ 50:50). The average crystallite size of the powders annealed at 500 °C was in the range 1.5–2.4 nm and a gradual increase occurred up to 8 nm by heat treatment at 800 °C. The activation energy of crystal growth decreased with an increase of Ni:Ti molar ratio, calculated in the range 24.93–37.17 kJ/mol. Field emission scanning electron microscope analysis revealed that the deposited thin films had mesoporous and nanocrystalline structure with the average grain size of 20–35 nm. Moreover, atomic force microscope images presented that the thin films had a hill-valley like morphology with roughness mean square in the range 41–57 nm. Based on Brunauer–Emmett–Taylor analysis, the synthesized powders showed mesoporous structure containing pores with needle and plate like shapes. The mesoporous structure of the powders was stable at high annealing temperatures and one of the highest surface areas (i.e., 156 m²/g) reported in the literature was obtained for the powder containing Ni:Ti = 50:50 at 500 °C.     

Optical constants,dispersion energy parameters and dielectric properties of ultra-smooth nanocrystalline BiVO4 thin films prepared by rf-magnetron sputtering

BiVO₄ thin films have been prepared through radio frequency (rf) magnetron sputtering of a pre-fabricated BiVO₄ target on ITO coated glass (ITO-glass) substrate and bare glass substrates. BiVO₄ target material was prepared through solid-state reaction method by heating Bi₂O₃ and V₂O₅ mixture at 800 °C for 8 h. The films were characterized by X-ray diffraction, UV–Vis spectroscopy, LCR meter, field emission scanning electron microscopy, transmission electron microscopy and atomic force microscopy. BiVO₄ thin films deposited on the ITO-glass substrate are much smoother compared to the thin films prepared on bare glass substrate. The rms surface roughness calculated from the AFM images comes out to be 0.74 nm and 4.2 nm for the films deposited on the ITO-glass substrate and bare glass substrate for the deposition time 150 min respectively. Optical constants and energy dispersion parameters of these extra-smooth BiVO₄ thin films have been investigated in detail. Dielectric properties of the BiVO₄ thin films on ITO-glass substrate were also investigated. The frequency dependence of dielectric constant of the BiVO₄ thin films has been measured in the frequency range from 20 Hz to 2 MHz. It was found that the dielectric constant increased from 145 to 343 at 20 Hz as the film thickness increased from 90 nm to 145 nm (deposition time increased from 60 min to 150 min). It shows higher dielectric constant compared to the literature value of BiVO₄.     

Role of Layer-by-Layer Deposition on Electrical and Optical Properties of PEDOT: PSS/Polyaniline Thin Films for Solar Cells

In this article, electrical and optical properties of PEDOT:PSS/Polyaniline: (PANI)bilayer thin films deposited on indium tin oxide (ITO) are reported. Spin coater has been used for fabrication of thin films of 40–50 nm thickness at 5000 rpm. The deposited thin films have been characterized by using Fourier transform infrared (FT-IR) spectroscopy, scanning electron microscopy (SEM), UV-vis spectroscopy and Keithley electrometer. Layer-by-layer (LBL) technique has been shown to produce electroactive polymer films with low roughness, excellent uniformity, and high electrical conductivity for heterojunction solar cells. The electrical response of fabricated films showing ohmic behavior for PEDOT: PSS/PANI thin films.     

Preparation and characterization of nanocomposite ZnO–Ag thin film containing nano-sized Ag particles: influence of preheating,annealing temperature and silver content on characteristics

Nanocomposite ZnO–Ag thin film containing nano-sized Ag particles have been grown on glass substrate by spin-coating technique using zinc acetate dihydrate as starting precursor in 2-propanol as solvent and monoethanolamine as stabilizer. Silver nanoparticles were added in the ZnO sol using silver nitrate dissolved in ethanol-acetonitrile. Their structural, electrical, crystalline size and optical properties were investigated as a function of preheating, annealing temperature and silver content. The results indicated that the crystalline phase was increased with increase of annealing temperature up to 550 °C at optimum preheating temperature of 275 °C. Thermal gravimetric differential thermal analysis results indicated that the decomposition of pure ZnO and nanocomposite ZnO–Ag precursors occurred at 225 and 234 °C, respectively with formation of ZnO wurtzite crystals. The scanning electron microscopy and atomic force microscopy revealed that the surface structure (the porosity and grain size) of the ZnO–Ag thin film (the film thickness is about 379 nm) was changed compared to pure ZnO thin film. The result of transmission electron microscopy showed that Ag particles were about 5 nm and ZnO particles 58 nm with uniform silver nanoclusters. Optical absorption results indicated that optical absorption of ZnO–Ag thin films decreased with increase of annealing temperature. Nanocomposite ZnO–Ag thin films with [Ag] = 0.068 M and [Ag] = 0.110 M showed an intense absorption band, whose maximum signals appear at 430 nm which is not present in pure ZnO thin films. The result of X-ray photoelectron spectroscopy revealed that the binding energy of Ag 3d_5/2 for ZnO–Ag shifts remarkably to the lower binding energy compared to the pure metallic Ag due to the interaction between Ag and ZnO.     

Structural stability and phase transitions in WO3 thin films

Tungsten oxide (WO3) thin films have been produced by KrF excimer laser (lambda = 248 nm) ablation of bulk ceramic WO3 targets. The crystal structure, surface morphology, chemical composition, and structural stability of the WO3 thin films have been studied in detail. Characterization of freshly grown WO3 thin films has been performed using X-ray diffraction (XRD), atomic force microscopy (AFM), energy-dispersive X-ray spectroscopy (EDX), Raman spectroscopy (RS), transmission electron microscopy (TEM), and selected area electron diffraction (SAED) measurements. The results indicate that the freshly grown WO3 thin films are nearly stoichiometric and well crystallized as monoclinic WO3. The surface morphology of the resulting WO3 thin film has grains of approximately 60 nm in size with a root-mean-square (rms) surface roughness of 10 nm. The phase transformations in the WO3 thin films were investigated by annealing in the TEM column at 30-500 degrees C. The phase transitions in the WO3 thin films occur in sequence as the temperature is increased: monoclinic --> orthorhombic --> hexagonal. Distortion and tilting of the WO6 octahedra occurs with the phase transitions and significantly affects the electronic properties and, hence, the electrochemical device applications of WO3.     

Growth and characterization of molybdenum oxide thin films prepared by photochemical metal–organic deposition (PMOD)

Molybdenum oxide thin films have been successfully prepared by direct UV irradiation of amorphous films of a molybdenum dioxide acetylacetonate complex on Si(1 0 0) substrates. Photodeposited films were characterized by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) and the surface morphology examined by Atomic Force Microscopy (AFM). It was found that as-photodeposited films are uniform and smooth, with thickness of 350 nm, with rms surface roughness of 28 nm and contain non-stoichiometric oxides (MoO_3−x). The results of XRD analysis showed that post-annealing of the films in air at 450 °C transforms the sub-oxides to α-MoO₃ phase with a much rougher surface morphology (rms = 144 nm). The as-photodeposited MoO_3−x films are amorphous, and exhibit better optical quality than annealed films.     

Enhanced nucleation, smoothness and conformality of ultrananocrystalline diamond (UNCD) ultrathin films via tungsten interlayers

Extremely smooth (6 nm RMS roughness over 4 μm²), thin (100 nm), and continuous ultrananocrystalline diamond (UNCD) films were synthesized by microwave plasma chemical vapor deposition using a 10 nm tungsten (W) interlayer between the silicon substrate and the diamond film. These UNCD films possess a high content of sp³-bonded carbon. The W interlayer significantly increased the initial diamond nucleation density, thereby lowering the surface roughness, eliminating interfacial voids, and allowing thinner UNCD films to be grown. This structural optimization enhances the films’ properties and enables its integration with a wide variety of substrate materials.     

Effect of sol-gel preparation method on particle morphology in pure and nanocomposite PZT thin films

Double-scale composite lead zirconate titanate Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films of 360 nm thickness were prepared by a modified composite sol-gel method. PZT films were deposited from both the pure sol and the composite suspension on Pt/Al₂O₃ substrates by the spin-coating method and were sintered at 650°C. The composite suspension formed after ultrasonic mixing of the PZT nanopowder and PZT sol at the powder/sol mass concentration 0.5 g mL⁻¹. PZT nanopowder (≈ 40–70 nm) was prepared using the conventional sol-gel method and calcination at 500°C. Pure PZT sol was prepared by a modified sol-gel method using a propan-1-ol/propane-1,2-diol mixture as a stabilizing solution. X-ray diffraction (XRD) analysis indicated that the thin films possess a single perovskite phase after their sintering at 650°C. The results of scanning electron microscope (SEM), energy-dispersive X-ray (EDX), atomic force microscopy (AFM), and transmission electron microscopy (TEM) analyses confirmed that the roughness of double-scale composite PZT films (≈ 17 nm) was significantly lower than that of PZT films prepared from pure sol (≈ 40 nm). The composite film consisted of nanosized PZT powder uniformly dispersed in the PZT matrix. In the surface micrograph of the film derived from sol, large round perovskite particles (≈ 100 nm) composed of small spherical individual nanoparticles (≈ 60 nm) were observed. The composite PZT film had a higher crystallinity degree and smoother surface morphology with necklace clusters of nanopowder particles in the sol-gel matrix compared to the pure PZT film. Microstructure of the composite PZT film can be characterized by a bimodal particle size distribution containing spherical perovskite particles from added PZT nanopowder and round perovskite particles from the sol-matrix, (≈ 30–50 nm and ≈ 100–120 nm), respectively. Effect of the PZT film preparation method on the morphology of pure and composite PZT thin films deposited on Pt/Al₂O₃ substrates was evaluated.     

Preparation of mesoporous hydroxyapatite films used as biomaterials via sol–gel technology

The mesoporous hydroxyapatite films (MHFs) have been developed on glass slides by sol–gel dip-coating technology using cetyltrimethylammonium bromide (CTAB) as the structure-directing agent and the effects of pH value and calcination temperatures on the surface morphology and the mesostructure have been discussed. The phase composition, surface morphology, mesostructure and surface wettability were characterized by X-ray diffraction, scanning electron microscope, transmission electron microscope, N₂ adsorption–desorption isotherms and water contact angle analyzer, respectively. The continuous thin films consisted of mesoporous hydroxyapatite particles (~50 nm) with mesopores (~2 nm) within the particles have been obtained after being prepared in the condition of concentration of CTAB 0.09 M, pH of sol 3.0, reaction temperature 60 °C and calcination temperature 550 °C. In vitro cell culture, the mesoporous films, which possessed favorable surface wettability resulting from the special pore structure, have exhibited a high degree of MC3T3-E1 cell attachment and spreading, suggesting a better bioactivity. Therefore, the MHFs can be expected to have potential application for decreasing the ion release of implant and improving the bioactivity as a coating on material surface.     

Effect of swift heavy ion irradiation on the physical properties of CuIn(S0.4Se0.6)2 alloy thin films prepared by solution growth technique

Alloy thin films of CuIn(S_0.4Se_0.6)₂ material were deposited using the solution growth technique. The various deposition parameters such as pH of solution, time, concentration of ions and temperature have been optimized for the device grade thin films. The as-deposited films were annealed in a rapid thermal annealing (RTA) system at 450 °C in air for 5 min and subjected to high-energy Ag ion irradiations. Ag ion irradiation has been performed with an energy of 100 MeV at a fluency of 5×10¹² ions/cm² on the thin film. The changes in optical and electrical properties that occurred before and after post-deposition treatments in CuIn(S_0.4Se_0.6)₂ thin films were studied using X-ray diffraction (XRD) and AFM; increase in crystallinity was observed after annealing and irradiation. In addition, structural damages were observed in irradiated thin films. After annealing and irradiation, the surface roughness was seen to be increased. Decrease in resistivity was observed, which is consistent with the optical energy band gap. The results are explained by considering the high energy deposited due to the electronic energy loss upon irradiation, which modified the properties of the material.     

The effect of different gas atmospheres on the structure,morphology and photoluminescence properties of pulsed laser deposited Y3(Al,Ga)5O12:Ce3+ nano thin films

Luminescent properties of Y₃(Al,Ga)₅O₁₂:Ce³⁺ phosphor powder and thin films were obtained. The phosphor powder was used as target material for Pulsed Laser Deposition (PLD) of the thin films in the presence of different background gases. Excitation peaks for the powder were obtained at 439, 349, 225 and 189 nm and emission peaks at 512 and 565 nm. X-ray diffraction indicated that better crystallization took place for films deposited in a 20 mTorr O₂ atmosphere. Atomic force microscope revealed an RMS value of 0.7 nm, 2.5 nm and 4.8 nm for the films deposited in vacuum, O₂ and Ar atmospheres, respectively. The highest PL intensity was observed for films deposited in the O₂ atmosphere. A slight shift in the wavelength of the PL spectra was obtained for the thin films due to a change in the crystal field. The thickness of the films varied from 120 nm to 270 nm with films deposited in vacuum having the thin layer and those in Ar having the thick layer. The stoichiometry of the powder was maintained in the film during the deposition as confirmed by Rutherford backscattering spectroscopy.     

Structural and thermal study of CuInSe2 films

Ternary copper indium Di-selenide (CISe) thin film has been deposited by spin-coating on non-conducting glass slide substrates and a solution prepared by the sol-gel process. At room temperature, correspondingly, CuCl2·2H2O, InCl3·3H2O, and H2SeO3 were employed as precursor source chemicals for Cu, In, and Se ions. The dark brown films adhered effectively to the glass substrates. Energy dispersive X-ray analysis is utilized to assess the thin film's chemical composition, which revealed that the film was close to the stoichiometric ratio and proved the proper elemental composition. The thin film's tetragonal unit cell structure was validated by XRD analysis, and all of the derived lattice parameters (a = 5.8512 A and c = 11.7268 A) are excellent consistent with the previous results. Scherrer's formula yields a crystallite size of 5.94 nm. SEM microtopography of the film surface revealed that the film is homogeneous on the substrate surface, and AFM revealed that the film has a spike-like morphology. UV–Vis spectroscopy was performed in the 300–1400 nm region. The obtained values of the absorption coefficient and band gap are 1.2eV. The thermal analysis is carried out by TGA.     

Effect of post-deposition annealing temperature on RF-sputtered HfO2 thin film for advanced CMOS technology

Structural and electrical properties of HfO₂ gate-dielectric metal-oxide-semiconductor (MOS) capacitors deposited by sputtering are investigated. The HfO₂ high-k thin films have been deposited on p-type <100> silicon wafer using RF-Magnetron sputtering technique. The Ellipsometric, FTIR and AFM characterizations have been done. The thickness of the as deposited film is measured to be 35.38 nm. Post deposition annealing in N₂ ambient is carried out at 350, 550, 750 °C. The chemical bonding and surface morphology of the film is verified using FTIR and AFM respectively. The structural characterization confirmed that the thin film was free of physical defects and root mean square surface roughness decreased as the annealing temperature increased. The smooth surface HfO₂ thin films were used for Al/HfO₂/p-Si MOS structures fabrication. The fabricated Al/HfO₂/p-Si structure had been used for extracting electrical properties such as dielectric constant, EOT, interface trap density and leakage current density through capacitance voltage and current voltage measurements. The interface state density extracted from the G–V measurement using Hill Coleman method. Sample annealed at 750 °C showed the lowest interface trap density (3.48 × 10¹¹ eV⁻¹ cm⁻²), effective oxide charge (1.33 × 10¹² cm⁻²) and low leakage current density (3.39 × 10⁻⁹ A cm⁻²) at 1.5 V.     

Preparation and optical absorption of electrodeposited or sputtered,dense or porous nanocrystalline CuInS2 thin films

Copper indium disulphide thin films were obtained by one-step deposition with two different techniques. Films are synthesised by electrodeposition using a single electrolytic bath and by r.f. sputtering using a single target. Deposition rates were about 75 nm/min and 2.5–6.5 nm/min, respectively. Electrodeposited films have rough and porous surfaces, with no preferential orientation. Smooth or particle-covered surfaces were observed for sputtered films with a highly (112)-oriented chalcopyrite structure. Absorption coefficients calculated from transmittance spectra have high values in visible range. Electrodeposited samples present higher absorption coefficients on a larger wavelength range. A relationship between morphology and optical properties was found; absorption coefficients increase with porosity and roughness of the films. Band gap values of about 1.3 eV for electrodeposited and 1.5 eV for sputtered thin films were calculated.     

Does the nanometre scale topography of titanium influence protein adsorption and cell proliferation?

To investigate the influence of titanium films with nanometre scale topography on protein adsorption and cell growth, three different model titanium films were utilized in the present study. The chemical compositions, surface topographies and wettability were investigated by using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and water contact angle measurement, respectively. The films share the same surface chemistry but exhibit different topographies on a nanometre scale. Thus, they act as model systems for biological studies regarding surface topography effects. The films were obtained by varying the deposition rate and the film thickness, respectively. These films displayed nanometre scale surface roughness (root mean square roughness, R_rms) from 2 to 21 nm over areas of 50 μm × 50 μm, with different grain sizes at their surfaces. Albumin and fibrinogen adsorption on these model titanium films were performed in this study. Bicinchoninic acid assay was employed to determine the amount of adsorbed protein on titanium film surfaces. No statistically significant differences, however, were observed for either albumin or fibrinogen adsorption between the different groups of titanium films. No statistically significant influence of surface roughness on osteoblast proliferation and cell viability was detected in the present study.     

Synthesis and characterization of Cu3Se2 nanofilms by an underpotential deposition based electrochemical codeposition technique

The Cu₃Se₂ nanofilms were synthesized with underpotential deposition based electrochemical codeposition technique for the first time in the literature. The electrochemical behaviors of copper and selenium were investigated in 0.1 M H₂SO₄ on Au electrode. The effects of concentration and scan rate on the electrochemical behavior of selenium were studied. The electrochemical behaviors in underpotential deposition and bulk regions of the Cu-Se system were investigated in acidic solution by cyclic voltammetry and electrolysis techniques. X-ray photoelectron spectroscopy, scanning electron microscopy, atomic force microscopy, X-ray diffraction, Raman spectroscopy, and ultraviolet and visible absorption spectroscopy techniques were used for characterization of synthesized films. According to the X-ray photoelectron spectroscopy spectrum, Cu/Se ratio was determined to be approximately 3/2. Copper selenide nanofilms are two phases and polycrystalline according to X-ray diffraction. The films mainly formed tetragonal Cu₃Se₂ (umangite mineral structure) structure and the particle size was approximately 45.95 nm. Scanning electron microscopy images showed that Cu₃Se₂ nanofilms consisted of uniform, nano-sizes and two-dimensional. It was found through AFM that the surface roughness of the film was 6.173 nm, with a mean particle size of around 50 nm. Depending on the deposition time, the band gaps of the Cu₃Se₂ films were in the range of 2.86–3.20 eV. Three characteristic vibrational modes belonging to Cu₃Se₂ nanofilms were recorded in the Raman spectrum.     

Electronic transport and optical properties of indium oxide thin films prepared by thermal oxidation

Indium oxide (In₂O₃) thin films were prepared using thermal oxidation of metallic films. Indium metallic thin films were deposited onto glass substrates, by vacuum thermal evaporation. Optical and electronic transport properties of thermally oxidized In₂O₃ films were investigated and these properties were correlated with their preparation conditions, more exactly with oxidation temperatures (T_ox = 623 K, 673 K and 700 K, respectively). Structural analysis, investigated by X-ray diffraction and electron diffraction, reveals that the obtained films possess a polycrystalline structure. The temperature dependence of electrical conductivity was studied using surface-type cells with Ag electrodes. The electronic transport mechanism, in respective films, is discussed in terms of crystallite boundary trapping, proposed by Seto. Some characteristic parameters such as energy barrier, impurity concentration, distribution of interface states, were determined. Transmission and reflection spectra were recorded and by using the values of these coefficients, some optical parameters were calculated (absorption coefficient, optical band gap, refractive index).