Photoconductivity and photoluminescence in chemically deposited films of CdSSe:CdCl2,Ho

Results of the scanning electron microscopy (SEM), X-ray diffraction (XRD), optical absorption, photoconductivity (PC), and photoluminescence (PL) studies for the CdSSe:CdCl₂,Ho films are presented in this paper. The SEM studies of different CdSSe films show a layered growth structure. A crystalline nature of the films is observed in the XRD studies. The regions with stacking fault were also observed in the X-ray diffractograms. The optical absorption spectra of these films show variations corresponding to the band gaps and the grain-sizes obtained under various deposition conditions and also with annealing. The effect of flux, impurities and annealing on the saturated photo to dark current ratio I_pc/I_dc is observed in the PC rise and decay studies. The maximum value of I_pc/I_dc ∼10⁷ is obtained for the impurity doped annealed films. The PL emission spectra of CdSSe films show two emission peaks associated with the annihilation of free excitons and the transitions between shallow donor and deep acceptor states. In CdSSe:CdCl₂,Ho films, two PL emission peaks are observed at 495 nm and 545 nm corresponding to the transitions ⁵S₂→⁵I₈ and ⁵F₃→⁵I₈, respectively, in Ho. The effect of pH on PL and grain size is also included in the present studies.     

Photoconductivity of chemically deposited lanthanum/neodymium doped (Cd - Pb)S films

Abstract

Results of photoconductivity rise and decay, optical absorption and photoconductivity excitation spectra are presented for different chemically deposited (Cd–-Pb)S films. The ratio of saturated photocurrent of rise curves (I_pc) to dark current (I_DC) is found to be of the order of 10⁵ for undoped (Cd_0.95–-Pb_0.05)S films which improves to 10⁶ for the systems prepared with NaF end Lanthanum/Neodymium nitrate. When annealing the films at 400°C for 2 minutes, the dark current decreases to almost zero, along with a decrease in the photocurrent, but the I_pc/I_DC ratio goes to a very high value. From the analysis of the decay curves lifetime of carriers are found to be 31.11 sec, 48.01 sec, 47.77 sec and 94.66 sec for (Cd_0.95–-Pb_0.05)S; (Cd_0.95–-Pb_0.05)S: NaF; (Cd_0.95–-Pb_0.05) S: NaF, La and (Cd_0.95 –- Pb_0.05)S: NaF, Nd respectively. Further the mobility of carriers for these systems are found to be 51.44 cm²/V-s, 93.33 cm²/V-s, 94.83 cm²/V-s and 164.78 cm²/V-s respectively. Band gaps determined from optical absorption and photoconductivity excitation spectra gave similar results. The direct band gap nature is found for mixed films. Results of different irradiation conditions during preparation of the films are also investigated.     

The multiferroic properties of Bi(Fe0.95Co0.05)O3 films

Bi(Fe_0.95Co_0.05)O₃ films were prepared on conductive indium tin oxide (ITO)/glass substrates by chemical solution deposition. Well saturated polarization hysteresis loop has been observed with a remnant polarization value of about 22 μC/cm² at room temperature. Weak ferromagnetism with saturation magnetization of about 3 emu/cm³ was observed at room temperature. The clear observation of both room temperature ferroelectric and ferromagnetic properties suggests the potential multiferroic applications of Bi(Fe_0.95Co_0.05)O₃.     

Formation of CdO films from chemically deposited Cd(OH)2 films as a precursor

Formation of cadmium hydroxide at room temperature onto glass substrates from an aqueous alkaline cadmium nitrate solution using a simple soft chemical method and its conversion to cadmium oxide (CdO) by thermal annealing treatment has been studied in this paper. The as-deposited film was given thermal annealing treatment in oxygen atmosphere at 450 °C for 2 h for conversion into cadmium oxide. The structural, surface morphological and optical studies were performed for as-deposited and the annealed films. The structural analyses revealed that as-deposited films consists of mixture of Cd(OH)₂ and CdO, while annealed films exhibited crystalline CdO. From surface morphological studies, conversion of clusters to grains after annealing was observed. The band gap energy was changed from 3.21 to 2.58 eV after annealing treatment. The determination of elementals on surface composition of the core-shell nanoparticles of annealed films was carried out using X-ray photoelectron spectroscopy (XPS).     

Broadband photoluminescence from pulsed laser deposited Er2O3 films

Photoluminescence (PL) with the bandwidth of 45 nm (1523-1568 nm at the level of 3 dB) was observed in amorphous Er₂O₃ films grown on to the quartz substrate by pulsed laser ablation of erbium oxide stoichiometric target. Optical transmission spectrum has been fitted to Swanepoel formula to determine the dispersion of refractive index and to extract resonance absorption peaks at 980 and 1535 nm. The maximum gain coefficient of 800 dB/cm at 1535 nm was estimated using McCumber theory and experimental spectrum of the resonance absorption. In 5.7 mm-long waveguide amplifier a theory predicts the spectral gain of 20 dB with 1.4 dB peak-to-peak flatness in the bandwidth of 31 nm (1532-1563 nm) when 73% of Er³⁺ ions are excited from the ground state to the ⁴I_13/2 laser level. Strong broadband PL at room temperature and inherently flat spectral gain promise Er₂O₃ films for ultra-short high-gain optical waveguide amplifiers and integrated light circuits.     

EPR of Mn2+ doping unannealed single crystal of (La2O3)0.95(CeO2)0.05

X-band room temperature EPR spectra have been recorded for Mn²⁺ ion doping unannealed (La₂O₃)_0.95(CeO₂)_0.05 host crystal. The data are analysed using a rigorous least-squares fitting procedure in which a large number of lines characterized by ΔM = ± 1, Δm = 0 transition, obtained for several orientations of the static magnetic field, are simultaneously fitted. Combined with the knowledge of the absolute sign of the hyperfine interaction parameter. A, the hyperfine Hamiltonian parameters A, B, Q as reported in this paper, are given with their correct signs. The information on the linewidth is used to deduce the deviation of the crystal-field axes of different Mn²⁺ ions from the c axis; on the basis of the model proposed here these deviations are found to be between 0 and 10°.     

Magnetic phase transition in (Mn0.95Ni0.05)3B4

It was found that the metallic compound (Mn_0.95Ni_0.05)₃B₄ was ferromagnetic below 195 K and antiferromagnetic between 195 and 354 K. The transition temperature from ferromagnetic to antiferromagnetic increases with increasing external magnetic field. On the other hand, the transition temperature from antiferromagnetic to paramagnetic decreases with increasing magnetic field. It is expected that the present results might be explained by the theoretical results on the coexistence of ferro- and antiferromagnetism in the itinerant electron system reported by Moriya and Usami.     

Structural and photoluminescence characters of SnO2:Sb films deposited by RF magnetron sputtering

The Antimony-doped tin oxide (SnO₂:Sb) films have been prepared on glass substrates by RF magnetron sputtering method. The prepared samples are polycrystalline films with rutile structure of pure SnO₂ and have preferred orientation of (1 1 0) direction. XRD measurement did not detect the existence of Sb₂O₃ phase and Sb₂O₅ phase; Sb ions occupy the site of Sn ions and form the substitution doping. An intensive UV-violet luminescence peak near 392 nm is observed at room temperature. Photoluminescence (PL) properties influenced by sputtering power and annealing for the SnO₂:Sb films are investigated in detail and corresponding PL mechanism is discussed.     

CuInS2 thin films obtained through the annealing of chemically deposited In2S3-CuS thin films

In this work, we report the formation of CuInS₂ thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In₂S₃) at 300 and 350 °C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS₂ (JCPDS 27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 × 10⁻⁸ to 3 Ω⁻¹ cm⁻¹ depending on the thickness of the CuS film. CIS films showed p-type conductivity.     

Optical properties of Mg0.05Zn0.95O/SiO2 nanocomposite films prepared by sol–gel technique

Mg_0.05Zn_0.95O/SiO₂ nanocomposite films in the molar ratio 25:75 consisting of Mg_0.05Zn_0.95O nanoparticles embedded in a dielectric matrix were prepared by sol–gel technique (spin coating). Optical transmittance, Raman effect and photoluminescence measurements of the composites indicated effective capping of the Mg_0.05Zn_0.95O nanoparticles (radii 1. 61–1.68 nm) in the host showing practically no variation of particle size with the post deposition annealing treatments. The blue shift of the band gap (4.29–4.23 eV) from that of bulk Mg_0.05Zn_0.95O indicated strong carrier confinement for samples annealed at T ≤ 873 K. Highly intense UV emission ( ∼ 4.14 eV) compared to that of defect related emission (2.59 eV) at room temperature was obtained by incorporating 5% Mg in ZnO.     

Magnetic properties of Fe0.95Pd0.05 nanowire arrays

Fe_0.95Pd_0.05 nanowires were fabricated by the electrodeposition in porous anodic aluminum oxide templates and post-annealed at 300–700 °C. Transmission electron microscopy observations demonstrated the isolated nanowires to have polycrystalline structure. Magnetic measurements, however, showed improvement of both coercivity and squareness with the addition of 5 at% Pd in the Fe nanowires as well as proper annealing temperatures of about 500 °C.     

Photoconductive properties of some chemically deposited (Cd-Pb)S films

Films of (Cd-Pb)S have been prepared using chemical deposition in aqueous alkaline bath and their subsequent condensation on substrates. Important achievements in terms of electrical response, optical absorption and photoconductivity (PC) excitation spectra, SEM, XRD and photoluminescence (PL) studies are presented and discussed. From the photocurrent curves, the ratio I _PC (saturated photocurrent)/I _DC (dark current) was observed to be of the order of 10⁶ for the systems prepared with CdCl₂, and to be 10⁷ when doped with samarium nitrate. Values of trap depth E, lifetime and mobility are evaluated from the PC decay. Band gaps are determined from the two spectra. Diffraction lines in XRD studies are associated with CdS and PbS, and according to SEM studies, layered growth of the films takes place. PL of samarium-doped (Cd-Pb)S films shows an emission peak in the green-yellow region under 365-nm excitation. The PL brightness decreases with temperature.     

Magnetotransport properties and magnetocaloric effects of Mn1.95Cr0.05Sb0.95Ga0.05 compound

The magnetotransport properties and magnetocaloric effects of the compound Mn_{1.95}Cr_{0.05}Sb_{0.95}Ga_{0.05} have been studied. With decreasing temperature, a spontaneous first-order magnetic phase transition from ferrimagnetic (FI) to antiferromagnetic (AF) state takes place at T_s=200K. A metamagnetic transition from the AF to FI state can be induced by an external field, accompanied by a giant magnetoresistance effect of 57%. The magnetic entropy changes are determined from the temperature and field dependence of the magnetization using the thermodynamic Maxwell relation. Mn_{1.95}Cr_{0.05}Sb_{0.95}Ga_{0.05} exhibits a negative magnetocaloric effect, and the absolute values of ΔS_M^{max}(T,ΔH) are 4.4, 4.1, 3.6, 2.8 and 1.5 J/(kg·K) for magnetic field changes of 0－5T, 0－4T, 0－3T, 0－2T and 0－1T, respectively.     

YBa2(Cu0.95M0.05)3O7-δ的代换效应及其中子衍射研究

X射线衍射实验表明YBa₂(Cu_0.95M_0.05)₃O_7-δ(M=Ti,V,Cr,Mn,Fe,Co,Ni,Cu和Zn)均为单相结构。Fe,Co,Ni和Zn对Cu的替代使超导临界温度T_c显著下降,而同样含量的Ti,V,Cr,Mn对Cu的替代并未对超导性能产生显著影响。并利用中子衍射分析了Ti,Mn,Fe和Co对Cu原子的取代,发现代换原子对Cu的两个晶位各自存在不同的择优占据 关键词：     

Enhanced ferroelectric property of (Pb0.95Ca0.05)(Nb0.02Zr0.80Ti0.20)O3 thin films prepared by RF magnetron sputtering

(Pb_0.95Ca_0.05)(Nb_0.02Zr_0.80Ti_0.20)O₃ [PCNZT] thin films were deposited on the Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by RF magnetron sputtering with and without a LaNiO₃ [LNO] buffer layer. Ca and Nb elements in PZT films enhance the ferroelectric property, LaNiO₃ buffer layer improves the crystal quality of the PCNZT thin films. PCNZT thin films possess better ferroelectric property than that of PZT films for Ca and Nb ion substitution, moreover, PCNZT thin films with a LNO buffer layer possess (1 0 0) orientation and good ferroelectric properties with high remnant polarization (P_r = 38.1 μC/cm²), and low coercive field (E_c = 65 kV/cm), which is also better than that of PCNZT thin films without a LNO buffer layer (P_r = 27.9 μC/cm², E_c = 74 kV/cm). The result shows that enhanced ferroelectric property of PZT films can be obtained by ion substitution and buffer layer.     

AgSbSe2 and AgSb(S,Se)2 thin films for photovoltaic applications

Silver antimony selenide (AgSbSe₂) thin films were prepared by heating sequentially deposited multilayers of antimony sulphide (Sb₂S₃), silver selenide (Ag₂Se), selenium (Se) and silver (Ag). Sb₂S₃ thin film was prepared from a chemical bath containing SbCl₃ and Na₂S₂O₃, Ag₂Se from a solution containing AgNO₃ and Na₂SeSO₃ and Se thin films from an acidified solution of Na₂SeSO₃, at room temperature on glass substrates. Ag thin film was deposited by thermal evaporation. The annealing temperature was 350 °C in vacuum (10⁻³ Torr) for 1 h. X-ray diffraction analysis showed that the thin films formed were polycrystalline AgSbSe₂ or AgSb(S,Se)₂ depending on selenium content in the precursor films. Morphology and elemental analysis of these films were done using scanning electron microscopy and energy dispersive X-ray spectroscopy. Optical band gap was evaluated from the UV-visible absorption spectra of these films. Electrical characterizations were done using Hall effect and photocurrent measurements. A photovoltaic structure: glass/ITO/CdS/AgSbSe₂/Al was formed, in which CdS was deposited by chemical bath deposition. J-V characteristics of this structure showed V_oc = 435 mV and J_sc = 0.08 mA/cm² under illumination using a tungsten halogen lamp. Preparation of a photovoltaic structure using AgSbSe₂ as an absorber material by a non-toxic selenization process is achieved.     

Magnetic study of Mg0.95Mn0.05Fe2O4 ferrite nanoparticles

The magnetic properties of Mg_0.95Mn_0.05Fe₂O₄ ferrite samples with an average particle size of ∼6.0±0.6 nm have been studied using X-ray diffraction, Mössbauer spectroscopy, dc magnetization and frequency dependent real χ^′(T) and imaginary χ^″(T) parts of ac susceptibility measurements. A magnetic transition to an ordered state is observed at about 195 K from Mössbauer measurements. The zero-field-cooled (ZFC) and field-cooled (FC) magnetization have been recorded at low field and show the typical behavior of a small particle system. The ZFC curve displays a broad maximum at , a temperature which depends upon the distribution of particle volumes in the sample. The FC curve was nearly flat below , as compared with monotonically increasing characteristics of non-interacting superparamagnetic systems indicating the existence of strong interactions among the nanoparticles. A frequency-dependent peak observed in χ^′(T) is well described by Vogel-Fulcher law, yielding a relaxation time and an interaction parameter . Such values show the strong interactions and rule out the possibility of spin-glass (SG) features among the nanoparticle system. On the other hand fitting with the Néel-Brown model and the power law yields an unphysical large value of τ₀ (∼6×10⁻⁶⁹ and 1.2×10⁻²² s respectively).     

不同衬底和CdCl2退火对磁控溅射CdS薄膜性能的影响

在科宁7059玻璃, FTO, ITO, AZO四种衬底上磁控溅射CdS薄膜, 并在CdCl₂+干燥空气380 ℃退火, 分别研究了不同衬底和退火工艺对CdS薄膜形貌、结构和光学性能的影响. 扫描电子显微镜形貌表明: 不同衬底原位溅射CdS薄膜的形貌不同, 退火后相应CdS薄膜的晶粒度和表面粗糙度明显增大. XRD衍射图谱表明: 不同衬底原位溅射和退火CdS薄膜均为六角相和立方相的混相结构, 退火前后科宁7059玻璃, FTO, AZO衬底上CdS薄膜有 H(002)/C(111) 最强衍射峰, ITO衬底原位溅射CdS薄膜没有明显的最强衍射峰, 退火后出现 H(002)/(111) 最强衍射峰. 紫外-可见分光光度计分析表明: AZO, FTO, ITO, 科宁7059玻璃衬底CdS薄膜的可见光平均透过率依次减小, 退火后相应衬底CdS薄膜的可见光平均透过率增大, 光学吸收系数降低; 退火显著增大了不同衬底CdS薄膜的光学带隙. 分析得出: 上述结果是由于不同衬底类型和退火工艺对CdS多晶薄膜的形貌、结构和带尾态掺杂浓度改变的结果. 关键词： CdS薄膜 磁控溅射 退火再结晶 带尾态     

Valence and spin states in perovskites LaCo0.95M0.05O3 (M=Mg, Ga, Ti)

The samples LaCoO₃ with dilute substitutions on cobalt sites have been studied using the resistivity, thermopower and magnetic susceptibility measurements over the temperature range up to 900 K. The Co-site substitution does not affect the magnetic transition at 100 K and the onset of massive population of hole carriers at 500 K, characteristic for undoped LaCoO₃. On the other hand, the low-temperature transport and magnetism is markedly distinct for samples with extra charge on cobalt ions introduced by the heterovalent dopants (Mg²⁺, Ti⁴⁺) compared to samples with minor non-stoichiometry (LaCoO₃, Ga³⁺-doped sample). Magnetic properties suggest that these extra charges create thermally stable magnetic polarons of total S2–3. Common features of Co-site doped and La-site doped samples (La_1−xSr_xCoO₃) are discussed.     

Effect of different annealing methods on ferroelectric properties of 0.95Pb(Sc0.5Ta0.5)O3-0.05PbTiO3 thin films

0.95Pb(Sc_0.5Ta_0.5)O₃-0.05PbTiO₃ thin films were prepared on LaNiO₃/SiO₂/Si substrate by radio frequency magnetron sputtering, and the films were annealed subsequently with repeated many times by two approaches: normal one-step rapid thermal annealing and innovative two-steps rapid thermal annealing. X-ray diffraction demonstrates that all the films were preferred (1 0 0) oriented and an appropriate repeat of annealing process can enhance perovskite phase of the films. Scanning electron microscopy suggests that the films treated by two-steps rapid thermal annealing show crack-free, uniform size grains and dense microstructure. Measurement of remnant polarization and leakage current dependence of electric field confirms that the films treated by two-steps rapid thermal annealing exhibit better ferroelectric properties than the films treated by one-steps rapid thermal annealing. The results reveal that microstructure plays an important role in enhanced ferroelectric properties of the 0.95Pb(Sc_0.5Ta_0.5)O₃-0.05PbTiO₃ thin films.