Photoconductive properties of some chemically deposited (Cd–Pb)s films

Films of (Cd–Pb)S have been prepared using chemical deposition in aqueous alkaline bath and their subsequent condensation on substrates. Important achievements in terms of electrical response, optical absorption and photoconductivity (PC) excitation spectra, SEM, XRD and photoluminescence (PL) studies are presented and discussed. From the photocurrent curves, the ratio I_PC (saturated photocurrent)/I_DC (dark current) was observed to be of the order of 10⁶ for the systems prepared with CdCl₂, and to be 10⁷ when doped with samarium nitrate. Values of trap depth E, lifetime and mobility are evaluated from the PC decay. Band-gaps are determined from the two spectra. Diffraction lines in XRD studies are associated to CdS and PbS, and according to SEM studies layered growth of the films takes place. PL of samarium doped (Cd–Pb)S films shows an emission peak in the green-yellow region under 365?nm excitation. The PL brightness decreases with temperature.     

Photoconductive properties of some chemically deposited (Cd-Pb)S films

Films of (Cd-Pb)S have been prepared using chemical deposition in aqueous alkaline bath and their subsequent condensation on substrates. Important achievements in terms of electrical response, optical absorption and photoconductivity (PC) excitation spectra, SEM, XRD and photoluminescence (PL) studies are presented and discussed. From the photocurrent curves, the ratio I _PC (saturated photocurrent)/I _DC (dark current) was observed to be of the order of 10⁶ for the systems prepared with CdCl₂, and to be 10⁷ when doped with samarium nitrate. Values of trap depth E, lifetime and mobility are evaluated from the PC decay. Band gaps are determined from the two spectra. Diffraction lines in XRD studies are associated with CdS and PbS, and according to SEM studies, layered growth of the films takes place. PL of samarium-doped (Cd-Pb)S films shows an emission peak in the green-yellow region under 365-nm excitation. The PL brightness decreases with temperature.     

Photoconductivity and photoluminescence in chemically deposited films of (Cd–Zn)S:CdCl2, Ho

Results of SEM, XRD, optical absorption/reflectance, photoconductivity (PC), and photoluminescence (PL) are presented for (Cd–Zn)S:CdCl₂, Ho films prepared by chemical deposition technique by direct dipping either at room temperature (RT) or at 60 °C in a water bath. SEM studies show the presence of non-uniform distribution of particles. XRD studies show lines of CdS, ZnS along with lines of CdCl₂ and Ho. PL is found to be pronounced in films of RT preparation and for those prepared at 60 °C, PC is higher. Optical absorption/reflectance studies show the presence of Ho corresponding to the transition ⁵I₈→⁵F₁/⁵G₆. Emissions corresponding to the transitions ⁵S₂/⁵ F₄→⁵ I₈, ⁵G₅→⁵I₇, and ³H₅→⁵I₈ are observed in PL emission spectra.     

Photoluminescence properties of powder and pulsed laser-deposited PbS nanoparticles in SiO2

Thin films of lead sulfide (PbS) nanoparticles embedded in an amorphous silica (SiO₂) host were grown on Si(1 0 0) substrates at different temperatures by the pulsed laser deposition (PLD) technique. Surface morphology and photoluminescence (PL) properties of samples were analyzed with scanning electron microscopy (SEM) and a 458 nm Ar⁺ laser, respectively. The PL data show a blue-shift from the normal emission at ∼3200 nm in PbS bulk to ∼560-700 nm in nanoparticulate PbS powders and thin films. Furthermore, the PL emission of the films was red-shifted from that of the powders at ∼560 to ∼660 nm. The blue-shifting of the emission wavelengths from 3200 to ∼560-700 nm is attributed to quantum confinement of charge carriers in the restricted volume of nanoparticles, while the red-shift between powders and thin-film PbS nanoparticles is speculated to be due to an increase in the defect concentration. The red-shift increased slightly with an increase in deposition temperature, which suggests that there has been a relative growth in particle sizes during the PLD of the films at higher temperatures. Generally, the PL emission of the powders was more intense than that of the films, although the intensity of some of the films was improved marginally by post-deposition annealing at 400 °C. This paper compares the PL properties of powder and pulsed laser-deposited thin films of PbS nanoparticles and the effects of deposition temperatures.     

Photoconductivity and photoluminescence in chemically deposited films of CdSSe:CdCl2,Ho

Results of the scanning electron microscopy (SEM), X-ray diffraction (XRD), optical absorption, photoconductivity (PC), and photoluminescence (PL) studies for the CdSSe:CdCl₂,Ho films are presented in this paper. The SEM studies of different CdSSe films show a layered growth structure. A crystalline nature of the films is observed in the XRD studies. The regions with stacking fault were also observed in the X-ray diffractograms. The optical absorption spectra of these films show variations corresponding to the band gaps and the grain-sizes obtained under various deposition conditions and also with annealing. The effect of flux, impurities and annealing on the saturated photo to dark current ratio I_pc/I_dc is observed in the PC rise and decay studies. The maximum value of I_pc/I_dc ∼10⁷ is obtained for the impurity doped annealed films. The PL emission spectra of CdSSe films show two emission peaks associated with the annihilation of free excitons and the transitions between shallow donor and deep acceptor states. In CdSSe:CdCl₂,Ho films, two PL emission peaks are observed at 495 nm and 545 nm corresponding to the transitions ⁵S₂→⁵I₈ and ⁵F₃→⁵I₈, respectively, in Ho. The effect of pH on PL and grain size is also included in the present studies.     

Preparation, structures and photoluminescent enhancement of CdWO4-TiO2 composite nanofilms

For the first time, Cadmium tungstate (CdWO₄)-TiO₂ composite nanofilms on a glass substrate were prepared by means of the dip-coating technique, in which collodion was used as a dispersant and film-forming agent. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), thermo gravimetric and thermal analyses (TG/DTA), FTIR and photoluminescence (PL) methods, respectively. SEM and XRD characterization of these films indicated that CdWO₄ particles crystallized in a monoclinic wolframite-type structure whereas TiO₂ particles were Anatase phase; and both of them were well distributed in the nanofilms. FTIR spectra proved the presence of CdWO₄ on the nanofilms. Photoluminescent results showed that the emitting peak of CdWO₄ films blue shifted slightly relative to that of CdWO₄ crystal. Moreover, the PL intensity of CdWO₄-TiO₂ composite nanofilm was much higher than that of CdWO₄ nanofilm. We ascribed that the introduction of TiO₂ should be responsible for the PL enhancement.     

Enhanced blue emission and EPR study of LaMgAl11O19:Eu phosphors

Europium doped LaMgAl₁₁O₁₉ phosphor was prepared by the combustion method. The as-prepared and post-treated (1350 °C 10 h 5% H₂+95% N₂) phosphors were investigated by X-ray diffraction (XRD), Fourier transform infrared (FT-IR), scanning electron microscopy (SEM), photoluminescence (PL) and electron paramagnetic resonance (EPR) techniques. XRD patterns show that LaMgAl₁₁O₁₉:Eu phosphors have hexagonal structure. FT-IR spectrum exhibits absorption bands corresponding to the stretching vibration of AlO₄ and AlO₆. Morphological studies reveal that this phosphor has faceted plates of varying sizes and shapes. The as-prepared LaMgAl₁₁O₁₉:Eu phosphor consists of both Eu³⁺ and Eu²⁺ ions. The phosphor exhibits a bright blue emission at 450 nm (4f⁶5d→4f⁷ transition of Eu²⁺). On post-treating the phosphor we are able to enhance the blue emission efficiency by 330%. The process was detected from the evolution of excitation, emission and EPR spectra and the results are discussed.     

Effect of KI/LiF/CdCl2 on photoluminescent and electroluminescent properties of nanocrystalline (Zn-Cd)S: Cu films

The effect of KI/LiF/CdCl₂ on photoluminescent and electroluminescent (EL) spectra have been reported for (Zn-Cd)S:Cu films. Nanocrystalline films of (Zn-Cd)S:Cu have been prepared using chemical deposition technique in aqueous alkaline bath and their subsequent condensation on substrates. Important results in terms of XRD, SEM, absorption spectra, PL and EL spectra, voltage and frequency dependence of EL brightness are presented. Also, EL brightness waves, EL decay and dependence of EL brightness on nature of electrode material are presented and discussed. SEM studies show best growth conditions in the presence of CdCl₂. Results of XRD studies are associated to ZnS and CdS. Both the studies show average particle sizes to be in the nano order. PL and EL emissions from different films show emission peaks in the blue–green region. Results of absorption spectra show a slight change in band gaps owing to the addition of impurities. Voltage dependence of EL brightness shows effectiveness of acceleration–collision mechanism. Frequency dependence of EL brightness first shows an increase in brightness in the lower frequency range, followed by saturation at higher frequencies. Brightness waves consist of primary and secondary waves, which depend on voltage and frequency of excitation. EL cells with Al electrode give better brightness compared with cells with Ag electrodes. The lifetimes of EL emission are found to be of the order of microseconds.     

Preparation and characterization of electrodeposited Sb2Se3 thin films from non-aqueous media

Semiconducting Sb₂Se₃ thin films have been prepared onto the stainless steel and fluorine doped tin oxide coated glass substrates from non-aqueous media using an electrodeposition technique. The electrodeposition potentials for different bath compositions and concentrations of solution have been estimated from the polarization curves. SbCl₃ and SeO₂ in the volumetric proportion as 1:1 with their equimolar solution concentration of 0.05 M form good quality films. The films are characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and optical absorption techniques. The SEM studies show that the film covers the total substrate surface with uneven surface morphology. The XRD patterns of the films obtained by varying compositions and concentrations show that the as-deposited films are polycrystalline with relatively higher grain size for 1:1 composition and 0.05 M concentration. The optical band gap energy for indirect transition in Sb₂Se₃ thin films is found to be 1.195 eV.     

Synthesis and optical properties of Ce-doped Y3Mg2AlSi2O12 phosphors

Y_3−xMg₂AlSi₂O₁₂:Ce_x³⁺ (x=0.015, 0.03 and 0.06) phosphors possessing garnet crystal structure were synthesized by the sol–gel combustion technique. The samples were characterized by application of powder X-ray diffraction (XRD), photoluminescence (PL) spectroscopy, thermal quenching (TQ) and scanning electron microscopy (SEM). Moreover, luminous efficacies (LE), color points and quantum efficiencies (QE) were calculated. Optical properties were studied as a function of Ce³⁺ concentration and annealing temperature. XRD analysis revealed that sintering of polycrystalline Y₃Mg₂AlSi₂O₁₂:Ce³⁺ powders at 1550 °C results in nearly single-phase garnet materials. Phosphors showed broad emission band in the range of 500–750 nm and had the maximum intensity at 600 nm, which results in strongly red-shifted phosphors compared with conventional YAG:Ce phosphors emitting at 560 nm. However, strong concentration quenching has also been observed, probably due to increased Stokes shift.     

Eu activated M6AlP5O20 (M=Sr/Ba/Mg) novel red phosphors

Eu³⁺ activated M₆AlP₅O₂₀ (where M=Sr/Ba/Mg) phosphors prepared by combustion synthesis and the completion of the synthesis was confirm by XRD (X-ray diffraction) patterns. The surface morphology studied by scanning electron microscopy (SEM) and photoluminescence (PL) properties has been reported in this paper. The Eu³⁺ PL emission spectrum was observed in M₆AlP₅O₂₀ phosphors (where M=Sr/Ba/Mg) at 592 (orange) and 618 nm (red) region, the spectrum due to ⁵D₀→⁷F₁ and ⁵D₀→⁷F₂ transitions at mercury free excitation, respectively. Its considerable emission intensity under 350 nm excitations makes it possible candidate materials as red component of tricolor luminescence materials and for near ultra violet light emitting diode (n-UVLED) phosphors.     

Optical study of Sr2SnO4:Eu phosphor

This work presents the influence of europium dopant on optical properties of Sr₂SnO₄:Eu³⁺ powders fabricated by a facile low temperature method. Powders were obtained from the same amounts of Eu³⁺ doping into the different concentrations of Sr(NO₃)₂. Powders were examined by means of scanning electron microscopy (SEM), X-ray diffraction (XRD), and photoluminescence (PL). SEM measurements different Eu concentrations in fabricated powders was determined to found different morphologies. XRD analysis revealed the existence of crystalline Sr₂SnO₄ in the form of tetragonal and the diffraction intensity was remarkably changed. PL studies showed a red luminescence of Sr₂SnO₄:Eu³⁺ powders. The intensity of luminescence increased with better crystallinity. This approach provides economically viable route for large-scale synthesis of this kind of nanopowders.     

Low-temperature preparation of F-doped TiO2 film and its photocatalytic activity under solar light

A novel and simple method for preparing F-doped anatase TiO₂ (defined as FTO) film with high photocatalytic activity was developed using titanium-n-butoxide and NH₄F as TiO₂ and fluorine precursors under mild condition, i.e. low temperature (lower than 373 K) and ambient pressure. The prepared samples were characterized by XRD, SEM, X-ray photoelectron spectroscopy (XPS), diffuse reflectance spectrum (DRS), photoluminescence spectrum (PL) and TG-DSC analysis. The photocatalytic activity was evaluated by decomposing X-3B under artificial solar light. The results showed that the crystallinity of TiO₂ was improved by F-doping. F⁻ ions can prevent the grain growth, and the transformation of anatase to rutile phase was also inhibited. The doped fluorine atoms existed in two chemical forms, and the ones incorporated into TiO₂ lattice might take a positive role in photocatalysis. Compared with surface fluorination samples, FTO film exhibited better photocatalytic activity. The high photocatalytic activity of FTO may due to extrinsic absorption through the creation of oxygen vacancies rather than the excitation of the intrinsic absorption band of bulk TiO₂. Furthermore, the FTO can be recycled with little photocatalytic activity depression. Without any further treatment besides rinsing, after 6 recycle utilization, the photocatalytic activity of FTO film was still higher than 79%.     

Synthesis of flower-shape clustering GaN nanorods by ammoniating Ga2O3 films

Flower-shape clustering GaN nanorods are successfully synthesized on Si（111） substrates through ammoniating Ga2O3/ZnO films at 950℃. The as-grown products are characterized by x-ray diffraction （XRD）, scanning electron microscope （SEM）, field-emission transmission electron microscope （FETEM）, Fourier transform infrared spectrum （FTIR） and fluorescence spectrophotometer. The SEM images demonstrate that the products consist of flower-shape clustering GaN nanorods. The XRD indicates that the reflections of the samples can be indexed to the hexagonal GaN phase and HRTEM shows that the nanorods are of pure hexagonal GaN single crystal. The photoluminescence （PL） spectrum indicates that the GaN nanorods have a good emission property. The growth mechanism is also briefly discussed.     

A novel chemical synthesis and characterization of Mn3O4 thin films for supercapacitor application

Mn₃O₄ thin films have been prepared by novel chemical successive ionic layer adsorption and reaction (SILAR) method. Further these films were characterized for their structural, morphological and optical properties by means of X-ray diffraction (XRD), Fourier transform infrared spectrum (FTIR), field emission scanning electron microscopy (FESEM), wettability test and optical absorption studies. The XRD pattern showed that the Mn₃O₄ films exhibit tetragonal hausmannite structure. Formation of manganese oxide compound was confirmed from FTIR studies. The optical absorption showed existence of direct optical band gap of energy 2.30 eV. Mn₃O₄ film surface showed hydrophilic nature with water contact angle of 55°. The supercapacitive properties of Mn₃O₄ thin film investigated in 1 M Na₂SO₄ electrolyte showed maximum supercapacitance of 314 F g⁻¹ at scan rate 5 mV s⁻¹.     

Effect of RF power and sputtering pressure on the structural and optical properties of TiO2 thin films prepared by RF magnetron sputtering

TiO₂ thin films were deposited onto quartz substrates by RF magnetron sputtering. The samples deposited at various RF powers and sputtering pressures and post annealed at 873 K, were characterized using X-ray diffraction (XRD), micro Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), UV-vis spectroscopy and photoluminescence (PL) spectroscopy. XRD spectrum indicates that the films are amorphous-like in nature. But micro-Raman analysis shows the presence of anatase phase in all the samples. At low sputtering pressure, increase in RF power favors the formation of rutile phase. Presence of oxygen defects, which can contribute to PL emission is evident in the XPS studies. Surface morphology is much affected by changes in sputtering pressure which is evident in the SEM images. A decrease in optical band gap from 3.65 to 3.58 eV is observed with increase in RF power whereas increase in sputtering pressure results in an increase in optical band gap from 3.58 to 3.75 eV. The blue shift of absorption edge in all the samples compared to that of solid anatase is attributed to quantum size effect. The very low value of extinction coefficient in the range 0.0544-0.1049 indicates the excellent optical quality of the samples. PL spectra of the films showed emissions in the UV and visible regions.     

Preparation and properties of nanocrystalline powders in (Y1−xCex)3Al5O12 system

Nano-sized cerium-doped yttrium aluminum garnet (YAG:Ce) phosphors were synthesized via a simple sol-gel process using metal nitrate precursors. The prepared phosphors were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy, respectively. Pure cubic garnet phase was formed at temperatures ∼900 ^οC. The particle sizes of as-prepared powders were mostly in the range of 17-27 nm. The crystalline YAG:Ce showed broad emission peaks in the range of 400-700 nm and maximum intensities at 500 and 520 nm. It is found also that the emission intensity decreased with increasing Ce doping concentration from 0.1 to 1.5 at%. With increasing Ce doping concentration, the PL intensity was shifted towards shorter wavelengths.     

Influence of [S2O3]/[Sm] on Sm2S3 thin films deposited by liquid phase deposition method on self-assembled monolayers

Sm₂S₃ thin films were prepared on Si (1 0 0) substrates using SmCl₃ and Na₂S₂O₃ as precursors by liquid phase deposition method on self-assembled monolayers. The influence of the molar concentration ratio of [S₂O₃²⁻]/[Sm³⁺] on the phase compositions, surface morphologies and optical properties of the as-deposited films were investigated. The as-deposited Sm₂S₃ thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), ultraviolet-visible (UV-vis) and photoluminescence spectrum (PL). Results show that it is important to control the [S₂O₃²⁻]/[Sm³⁺] during the deposition process and monophase Sm₂S₃ thin films with orientation growth along (0 1 1) direction can be achieved when [S₂O₃²⁻]/[Sm³⁺] = 2.0, pH 3.0, with citric acid as a template agent. The as-deposited thin films exhibit a dense and crystalline surface morphology. Good transmittance in the visible spectrum and excellent absorbency of ultraviolet light of the thin films are observed, and the band gap of the thin films first decrease and then increase with the increase of the [S₂O₃²⁻]/[Sm³⁺]. The as-deposited thin films also exhibit red photoluminescence properties under visible light excitation. With the increase of the [S₂O₃²⁻]/[Sm³⁺] in the deposition solution, the PL properties of Sm₂S₃ thin films are obviously improved.     

Luminescence in trivalent rare earth activated Sr4Al2O7 phosphor

In this paper we report the combustion synthesis of trivalent rare-earth (RE³⁺ = Dy, Eu and Ce) activated Sr₄Al₂O₇ phosphor. The prepared phosphors were characterized by the X-ray powder diffraction (XRD) and photoluminescence (PL) techniques. Photoluminescence emission peaks of Sr₄Al₂O₇:Dy³⁺ phosphor at 474 nm and 578 nm in the blue and yellow region of the spectrum. The prepared Eu³⁺ doped phosphors were excited by 395 nm then we found that the characteristics emission of europium ions at 615 nm (⁵D₀?⁷F₂) and 592 nm (⁵D₀?⁷F₁). Photoluminescence (PL) peaks situated at wavelengths of 363 and 378 nm in the UV region under excitation at around 326 nm in the Sr₄Al₂O₇:Ce³⁺ phosphor.     

Synthesis and optical properties of Er and Eu doped SrAl2O4 phosphor ceramic

We report, for the first time on luminescence from a Er³⁺ doped SrAl₂O₄ phosphor. Effects of Eu³⁺ doping were also studied. The influence of rare-earth doping in crystal structure and its optical properties were analysed by means of X-ray diffraction (XRD), Raman scattering, optical absorption, excitation and emission (PL) spectroscopy, thermally stimulated luminescence (TSL) and scanning electron microscope (SEM). Luminescence spectra and luminescence decay curves for Er³⁺ transitions in the near infrared region were recorded. The PL maximum for Eu doped SrAl₂O₄ is obtained at 620 nm and corresponds to the orange region of the spectrum. Diffraction patterns reveal a dominant phase, characteristic of the monoclinic SrAl₂O₄ compound and the presence of dopants has no effect on the basic crystal structure of SrAl₂O₄. The shapes of the glow curves are different for each dopant irradiated with either a ⁹⁰Sr-⁹⁰Y beta source, or UV light at 311 nm, and in detail the TL signals differ somewhat between Er and Eu dopants.