Submillimetric cyclotron resonance linewidths and electron relaxation time in copper

For the first time submillimetric microwaves (λ<1 mm) are used to observe Azbel' Kaner cyclotron resonance in metals. The very high frequency used (typicallyF≅400 GHz) gives a large value ofωτ (typically 500) and therefore very sharp peaks. The fundamental resonance fieldH _c=m ^* cω/e is rather high (typically 200 KG), so subharmonicsH _c/n can be observed at many values ofH in the field region 0–27 KG. If relatively few electrons participate in the resonance and ifω _cτ≧50 (ω _c=eH/m ^* c,τ relaxation time) thenChambers has shown that the line shapes are independent of relaxation time while the fractional linewidthΔH/H varies as l/ωτ. For the belly orbit in pure copper the conditions of Chambers' theory are satisfied forH≧20 KG parallel to [111] axis.m ^* is a minimum andτ=1.8×10⁻¹⁰ s.     

Octupolar excitation of ion motion in a penning trap

The excitation of the motion of ions in a Penning trap at twice their cyclotron frequency, 2ν _c , by means of an azimuthal octupolar RF field has been studied with the LEBIT facility at the NSCL. The possibility of such an RF octupolar excitation has been verified. Compared to ion excitation at ν _c by means of quadrupolar fields an increased resolving power is observed in the cyclotron resonance curves, which may have important implications for Penning trap mass measurements. Numerical simulations have been used to characterize important properties of this type of excitation in detail and to predict the behavior of the ion motion under realistic conditions. Good agreement with the experimental results is observed.      

Hall effect plateaus and giant Shubnikov-de Haas oscillations in (BiSb)Telayered single crystals near the quantum limit

On bulk layered single crystals (Bi_0.25Sb_0.75)₂Te₃ with a hole concentration cm^-3 and a mobility cm²/Vs magnetoresistance and Hall effect investigations were performed in the temperature range T = 1.4 K ... 20 K in magnetic fields up to 18 T. For the magnetic field perpendicular to the layered structure giant Shubnikov-de Haas oscillations are measured; the positions of the maxima are triplets in the reciprocally scaled magnetic field. From the damping of the amplitudes with increasing temperature the cyclotron mass m _c = 0.12m ₀ is evaluated. Correlated with the SdH oscillations doublets of Hall effect plateaus (or kinks in low fields) are found. The weak well known Shubnikov-de Haas oscillations from the generally accepted multivallied highest valence band can be detected as a modulation on the giant oscillation. The high anisotropy of the SdH oscillations and their triplet structure in connection with the layered crystal structure lead us to suggest that the effects are caused by hole carrier pairing (mediated by the bipolaron mechanism) in quasi 2D sheets parallel to the crystal layer stacks. The measured Hall plateau resistances coincide with the quantum Hall effect values considering the number of layer stacks and the valley degeneracy of the 3D hole carrier reservoir. The ratio of spin splitting to Landau (cyclotron) splitting is observed to be . Received: 12 September 1997 / Revised: 8 January 1998 / Accepted: 22 January 1998     

Spin effects in InSb quantum wells

Among the III–V semiconductors, InSb has the smallest electron effective mass and the largest g-factor. We make use of these properties to explore some aspects of electron spin in InSb quantum wells with far-infrared magneto-spectroscopy. We observe the clear signature of spin-resolved cyclotron resonance caused by the non-parabolicity of the conduction band. We observe avoided-level crossings at magnetic fields where Landau levels of the same spin are predicted to intersect. We also study electron spin resonance in the far infrared over a wide range of magnetic field. In samples with symmetrically designed quantum wells we find cyclotron masses and observed g-factors in good agreement with a Pidgeon–Brown analysis adapted to the two-dimensional band structure. However, the spin splitting approaches 3 meV as the magnetic field approaches zero in samples intentionally asymmetrically doped.     

两个子带占据的In0.53Ga0.47As/In0.52Al0.48As量子阱中填充因子的变化规律

研究了低温(15K)和强磁场(0—13T)条件下, InP基In_053Ga_047As/In_052Al_048As量子阱中电子占据两个子带时填充因子随磁场的变化规律.结果表明,在电子自旋分裂能远小于朗道能级展宽的情况下,如果两个子带分裂能是朗道分裂能的整数倍时,即ΔE₂₁=kω_c(其中k为整数),填充因子为偶数;当两个子带分裂能为朗道分裂能的半奇数倍时,即ΔE₂₁=(2k+1)ω_c/2,填充因子出现奇数. 关键词： 053Ga_047As/In_052Al_048As量子阱')" href="#">In_053Ga_047As/In_052Al_048As量子阱 填充因子 磁输运     

The amplification of far-infrared radiation on optically excited p-type germanium

The far-infrared spectrum of cyclotron resonance absorption in the valence band of p-type germanium has been calculated using 6 × 6 k*p Hamiltonian for degenerate valence band for magnetic field 20T and lattice temperature 77K. That has been shown that excitation by pulseCO ₂ laser radiation can lead to the amplification on light hole cyclotron resonance.     

X-ray microanalysis of quaternary semiconductor solid solutions and its application to the (SnTe-SnSe):In system

A reliable technique of local chemical characterization of multicomponent semiconductor solid solutions has been developed, and the possibility of its application to the SnTe-SnSe quaternary solid solutions doped with 16 at.% In verified. The behavior of the electrical resistivity of samples of these solid solutions at low temperatures, 0.4–4.2 K, has been studied. The critical temperature T _c and the second critical magnetic field H _c2 of the superconducting transition and their dependences on the solid-solution composition have been determined. The superconducting transition at T _c≈2–3 K is due to hole filling of the In-impurity resonance states, and the observed variation of the superconducting transition parameters with increasing Se content in the solid solution is related to the extrema in the valence band and the In band of resonance states shifting with respect to one another. Fiz. Tverd. Tela (St. Petersburg) 41, 612–617 (April 1999)     

On the phase boundaries of the integer quantum Hall effect. Part II

It has been shown that the observation of the transitions between the dielectric phase and the integer-quantum-Hall-effect phases with the quantized Hall conductivity σ _xy ^q ≥ 3e ²/h announced in a number of works is unjustified. In these works, the crossing points of the magnetic-field dependence of the diagonal resistivity ρ _xx at different temperatures T and ω_cτ = 1 have been misidentified as the critical points of the phase transitions. In fact, these crossing points are due to the sign change of the derivative dρ _xx /dT owing to the quantum corrections to the conductivity. Here, ω_c = eB/m is the cyclotron frequency, τ is the transport relaxation time, and m is the effective electron mass.     

Resonance microwave photoresistance of a two-subband electron system at large filling factors

The microwave photoresistance of a double GaAs quantum well with two occupied size-quantization sub-bands E ₁ and E ₂ has been studied at the temperatures T = 1.6–4.2 K in the magnetic fields B < 0.5 T. The microwave photoresistance of such a system has been found to have a maximum amplitude when the maximum of the magneto-intersubband oscillations with the number k = (E ₂ − E ₁)ℏω_c coincides with the maximum or minimum of the ω/ω_c oscillations, where ω is the microwave frequency and ω_c is the cyclotron frequency. It has been shown that the resonance photoresistance that appears in the kth maximum of the magneto-intersubband oscillations is determined by the condition ℏω/(E ₂ − E ₁) = (j ± 0.2)/k, where k and j are positive integers.     

Strong coupling in the Kondo problem in the low-temperature region

The magnetic field dependence of the average spin of a localized electron coupled to conduction electrons with an antiferromangetic exchange interaction is found for the ground state. In the magnetic field range μH∼0.5T _c (T _c is the Kondo temperature) there is an inflection point, and in the strong magnetic field range μH≫T _c , the correction to the average spin is proportional to (T _c /μ H)². In zero magnetic field, the interaction with conduction electrons also leads to the splitting of doubly degenerate spin impurity states. Zh. éksp. Teor. Fiz. 115, 1263–1284 (April 1999) Published in English in the original Russian journal. Reproduced here with stylistic changes by the Translation Editor     

Dependence of the critical temperature of high-temperature cuprate superconductors on hoppings and spin correlations between CuO<Subscript>2</Subscript> planes

The influence of interlayer hoppings on the superconducting transition temperature (T _c) in bilayer cuprates has been studied. The parameter of hopping between layers is expressed as t _⊥(k) = t _⊥(cos(k _x ) − cos(k _y ))² and treated as a small perturbation for the states of two CuO₂ planes described by the t-t′-t″-J* model. In the generalized mean field approximation for d_{x² - y²}{d_{{x^2} - {y^2}}} symmetry of the superconducting gap, neither the interlayer hopping or exchange interaction, nor the pair hopping between CuO₂ layers provides an additional mechanism of Cooper pair formation or an increase in T _c. In the concentration dependence of T _c, the bilayer splitting of the upper Hubbard band of quasi-holes is manifested as two peaks with temperatures slightly lower than the maximum T _c for a single-layer cuprate. Interlayer antiferromagnetic spin correlations suppress bilayer splitting.     

Theory of the electronic structure and spin susceptibility of La2−x SrxCuO4

We solve the problem of the effect of strong electron correlations on the homogeneous spin susceptibility of current carriers in CuO₂ planes. We show that the dependence of the spin susceptibility χ(T) of high-T _c superconductors of the La_2−x Sr_xCuO₄ type on temperature and the doping index x can be explained fairly well by the two-band model suggested earlier (the singlet-correlated oxygen band plus the lower Hubbard band of copper). The model has features in common with the phenomenological t-J model but cannot be reduced to the latter completely. In contrast to the t-J model, the density of states of the oxygen holes has a peak near the bottom of the band. It is the presence of this peak together with the non-Fermi-liquid properties that explain the unusual behavior of the spin susceptibility of La_2−x Sr_xCuO₄. Zh. éksp. Teor. Fiz. 112, 1763–1777 (November 1997)     

Cyclotron resonance in the organic conductor (BEDO-TTF)2ReO4(H2O) in the millimeter wavelength band

Resonant microwave absorption in a (BEDO-TTF)₂ReO₄(H₂O) organic conductor single crystal at a temperature of 1.9 K, a magnetic field of up to 70 kOe, and in the frequency band between 30 and 120 GHz has been studied. A spectral component due to the cyclotron resonance (CR) of two-dimensional charge carriers has been identified for ν⩾80 GHz and H⩾10 kOe. The effective mass m(ω) increases with the frequency from m≈0.8m ₀ at ν=80 GHz to m≈0.95m ₀ at ν=120 GHz. Measurements of the CR line position and FWHM as functions of frequency yield an independently determined imaginary part of the memory function M(ω), which controls the dynamic magnetoconductivity, and the relaxation time τ(ν=100 GHz)≈2.9×10⁻¹¹ s, which is more than thirty times the value of this parameter in the low-frequency limit τ(ν→0). The anomalous behavior of the CR line position and FWHM is caused by the dispersion of both real and imaginary parts of M(ω), which are probably due to strong Fermi-liquid effects. Zh. éksp. Teor. Fiz. 111, 979–987 (March 1997)     

Zero differential resistance in a double quantum well at high filling factors

The differential resistance r _xx in a GaAs double quantum well with two occupied size-quantization subbands have been studied at temperatures T = 1.6–4.2 K in magnetic fields B < 0.5 T. It has been found that differential resistance r _xx vanishes at the maxima of magneto-intersubband oscillations with an increase in the direct current I _dc. It has been shown that the discovered r _xx ≈ 0 state appears under the condition 2R _c E _H/ħω_c < 1/2, where R _c is the cyclotron radius of electrons at the Fermi level, E _H is the Hall electric field induced by the current I _dc, and ω_c is the cyclotron frequency.     

Magneto-intersubband zener tunneling in a wide GaAs quantum well at high filling factors

The dependence of the differential resistance r _xx on the dc current density J _dc in a wide GaAs quantum well with two occupied size quantization subbands has been investigated at the temperature T = 4.2 K in the magnetic fields B < 1 T. A peak, whose position is given by the relation 2R _c eE _H = ħω_c/2, where R _c is the cyclotron radius, E _H is the Hall electric field, and ω_c is the cyclotron frequency, has been observed in the r _xx (J _dc) curves at high filling factors. The experimental results are attributed to Zener tunneling of electrons between the Landau levels of different subbands.     

Effect of interlayer single-particle hoppings on the superconducting transition temperature

It is well known that the superconducting transition temperature of high-T _c cuprates depends on the number of CuO₂ planes in the unit cell. The multilayer structure implies the possibility of interlayer hopping. Under the assumption that the interlayer hopping can be specified by the parameter t _⊥(k) = t _⊥(cos(k _x ) − cos(k _y ))², the quasiparticle excitation spectrum for the bilayer cuprate in the superconducting state has been determined in the framework of the t − t′ − t″ − t _⊥ − J* model using the generalized mean-field approximation. It turns out that the interlayer hoppings does not create any additional mechanism of the Cooper paring and does not lead to an increase in T _c . The splitting of the upper Hubbard quasiparticle band attributed to the interlayer hoppings is manifested as two peaks in the doping dependence of the superconducting transition temperature at temperatures below the maximum T _c value for a single-layer cuprate. It has been found that antiferromagnetic interlayer correlations suppress the interlayer splitting. This probably leads to the common doping dependence of T _c for both single-layer and bilayer cuprates.     

Far-infrared laser oscillation due to cyclotron emission in p-type germanium

Far-infrared laser oscillation due to cyclotron emission in the light hole band of p-type germanium was observed under crossed electric and magnetic fields. The wavelength is inversely proportional to magnetic fields with a cyclotron mass ofm _c =0.048m _c . Numerical calculations based on Luttinger Hamiltonian show that mixing of wavefunctions between the light and heavy hole bands causes population inversion betweenn=0 andn=1 light-hole Landau levels. It is also shown that non-equidistant energy spacing of light-hole Landau levels is essential to yield net amplification.     

Quantum cyclotron resonance of two-dimensional holes in the Ge layers of Ge-Ge1−x Six heterostructures

Quantum cyclotron resonance of two-dimensional holes in strained germanium layers of the periodic heterostructure Ge-Ge_1−x Si_x has been observed and investigated for the first time. The results are compared with the data of electrophysical measurements in strong magnetic fields. A clear dependence of the magnitude of the longitudinal effective mass of the holes on the absolute magnitude of the elastic deformation of the germanium layers (splitting energy of the hole subbands) is observed. Fiz. Tverd. Tela (St. Petersburg) 39, 2096–2100 (November 1997)     

Magnetic hyperfine field of Hg in nickel and the sign of magnetic moment of 197mAu by NMR-ON

Nuclear magnetic resonance on oriented nuclei (NMR-ON) measurements were performed on the successive decay of ^197mHg–^197mAu in Ni. The NMR-ON resonance spectra of ^197mHgNi were obtained by detecting the 134 keV γ-ray from the decay of ^197mHg and the 279 keV γ-ray from the decay of ^197mAu. The magnetic hyperfine splitting frequency of ^197mHgNi in an external magnetic field of 0.2 T has been determined as 16.55(6) MHz. With the known g-factor of ^197mHg the hyperfine field of B₈₂(^197mHgNi)= -13.53(6) T was deduced. The anisotropy of the 279 keV γ-ray (^197mAu to ¹⁹⁷Au) increased at the resonance. This phenomenon was explained using the spin inversion process including the lifetime of the isomer and the spin–lattice relaxation time. The sign of the g-factor of ^197mAu was determined to be positive. This revised version was published online in August 2006 with corrections to the Cover Date.     

Coupled ultrathin InAs layers in GaAs as a tool for the determination of band offsets

We have determined the band offsets at the highly strained InAs/GaAs heterointerface by photoluminescence excitation (PLE) measurements of the symmetric and antisymmetric states in two coupled ultrathin InAs layers embedded in a GaAs matrix. The conduction band offset ΔE_ccould be separated from the valence band offsets, since in a 32 monolayer (ML) barrier sample, the splitting between the heavy-hole exciton transitions is solely determined by ΔE_c. Knowing ΔE_c, the heavy-hole (hh) and light-hole (lh) band offsets ΔE_hhand ΔE_lhcould subsequently be determined from the coupling-induced shift and splitting in samples with a 16, 8 and 4 ML barrier. We find a conduction band offset of 535 meV, a conduction band offset ratio ofQ_c= 0.58 and a strain induced splitting between the hh and lh subbands of 160 meV.