含间位取代苯基聚醚酮酮的结晶与晶体结构研究

通过差示扫描法（ＤＳＣ）及广角Ｘ 射线衍射（ＷＡＸＤ）技术研究了含间位取代苯基聚醚酮酮（ＰＥＫｍＫ）的结晶行为与晶体结构．Ｘ 射线结果表明，从熔融态及玻璃态结晶时，ＰＥＫｍＫ只有一种晶型，其晶胞参数为：ａ＝０７６７２ｎｍ，ｂ＝０６１４９ｎｍ，ｃ＝１５９９ｎｍ．ＤＳＣ结果表明，ＰＥＫｍＫ热分析曲线都出现了熔融双峰，低熔融峰（ＤＯＷｎ）热焓占总热焓４～７％，它源于初始结晶形成的同一晶型不同厚度片晶．低熔融峰在２５０℃以上结晶转化成高熔融峰（Ｉ），ＰＥＫｍＫ平衡熔点为２９５℃     

含两种不同介晶基团的半刚性共聚酯液晶态的结构研究

用Ｘ－光衍射，偏光显微镜及ＤＳＣ对含两种不同长度介晶基团４，４’－联苯二酚（Ⅰ）和对苯二甲酸二（对羟苯基）酯（Ⅱ）的系列共聚酯的液晶态进行了表征，据其液晶态中两种介晶单元的堆砌方式提出了可能的模型，这种模型很好地解释了液晶态的Ｘ－光衍射分布．     

HE－1型催化剂异相聚合乙烯结晶性能研究 Ⅱ．超高分子量PE结晶行为

用小角Ｘ－射线散射，广角Ｘ－射线衍射，差示扫描量热法，研究了ＨＥ－１型钛系催化剂异相聚合超高分子量聚乙烯的稀溶液的结晶和熔融结晶的熔点，熔化热，结晶度，长周期，晶区厚度和非晶区厚度随分子量与结晶温度的关系，并着重讨论了熔融结晶和初生态结晶的不同过程机理，结果表明：ＵＨＭＷＰＥ稀溶液结晶的结晶度（Ｘ％），长周期（Ｌ）和晶区厚度（Ｌｃ）与分子量Ｍｗ无关，随结晶温度升高而增加，非晶区厚度（Ｌａ）与分子量     

酸性媒染紫—示波计时电位法测定天然水不同形态铝

本文报道酸性媒染紫（SVRS）一示波计时电位法测定天然水中不同形态铝。对24个实际水样分别在酸性pH5.2测定了无机单核铝Ali和碱性pH8.8底液中测定总单核铝Ala,有机单核铝Al0-Ala-Alio同时还应用该法测定了酸化水样中总铝AlT,酸溶态铝AlT=AlT-Ala,从而实现了水样中五种形态铝的电化学测定,测定值与Driscoll方法进行了比较对照,结果基本一致。本法特点为：简便快捷,灵敏准确,可以直接测定与铝毒性密切相关的无机单核铝Ali,无需分离步骤,水样用量小,适用于大批量天然水样中Al形态的快速分析。     

胆甾液晶／聚合物多组分体系的结构与性质研究Ⅳ．ChN／Poly（MMA－co－BMA）混合体系的X－射线衍射研究

用Ｘ－射线衍射法详细研究了ＣｈＮ／Ｐｏｌｙ（ＭＭＡ－ｃｏ－ＢＭＡ）共混体系在胆笛（Ｃｈ）相，近晶（Ｓ）相及结晶（Ｋ）态的分子排列。并给出了将液晶态的分子排列冻结在体系中，从而实现信息存储功能的条件。     

工业镀层及涂层厚度分析—同位素X射线荧光光谱法

采用自行研制的同位素Ｘ射线荧光分析仪，测定工业镀层和汽车涂层厚度，分析精度（ＲＳＤ）分别达２０％和３６％，该法具有快速、简便、无损等优点。     

高聚硅酸根离子与单态铝酸根离子聚合反应及其水势晶…

用核磁共振技术，、紫外吸收光谱和硅钼酸反应等方面研究了反应体系中硅酸根离子和铝酸根离子的聚合态，发现反应产物的形成与硅酸根的聚合态有关，单态铝酸根离子民高聚硅酸根离子（聚合度＞４０）反应生成凝胶；单态铝酸离子与单态或二聚态硅酸根离子反应生成沉淀。本文还研究了相同条件下的水热晶人，在沉淀区、混合区、凝胶区和溶胶区分别晶化得到沸石Ａ、Ｘ、Ｙ和Ｐ。     

金属蒸气法制备聚合物固载双金属催化剂———Pd-Cu催化剂的价态,分散度与活性

利用金属蒸气法制备了三种不同金属重量比的树脂固载及活性炭负载Ｐｄ Ｃｕ双金属催化剂．透射电镜（ＴＥＭ）和Ｘ 射线衍射（ＸＲＤ）测定结果表明催化剂中Ｐｄ Ｃｕ已形成合金．合金粒度极小，平均直径小于５ｎｍ．树脂固载催化剂金属粒度远小于活性炭负载催化剂的金属粒度．Ｘ 射线光电子能谱（ＸＰＳ）结果表明Ｐｄ和Ｃｕ均以零价态存在．在４ 甲基 ３ 戊烯 ２ 酮加氢反应中，树脂固载催化剂的活性和选择性均高于相应的活性炭负载催化剂     

铜基催化剂的制备方法对草酸二乙酯加氢反应的影响

草酸二乙酯加氢性成乙二醇的反应过程中，所用的铜基催化剂是由Ｃｕ（ＮＯ３）２与硅溶胶凝法制得的。本文考察了该催化剂的ＴＰＲ特性，结果表明，随着催化剂中Ｃｕ／ＳｉＯ２值的增大，其ＴＰＲ主峰ＴＭ峰温有所升高，这意味着催化剂的还原温度随Ｃｕ／ＳｉＯ２值的增大而提高。用ＸＲＤ和ＸＰＳ等手段对该催化剂还原后铜的含量及价态进行了考察，表明用胶凝法制备的铜基催化剂，还原后存在Ｃｕ＾ｏ和Ｃｕ＾＋两种价态。结合活性评     

柠檬酸铝/聚丙烯酰胺胶态分散凝胶反应动力学和机理的研究

采用粘度法研究了柠檬酸铝（AlCit)与部分水解取丙烯酰胺（HPAM）胶态分散凝胶体系的反应动力学。结果表明，胶态分散凝胶体系的交联反应是一级反应。并推导出胶态分散凝胶体系的反应动力学方程。     

砷化镓半导体表面自然氧化层的X射线光电子能谱分析

用X射线光电子能谱(XPS)，测量了Ga3d和As3d光电子峰的结合能值，指认了砷化镓(GaAs)晶片表面的氧化物组成，计算了表面氧化层的厚度，定量分析了表面的化学组成；比较了几种不同的砷化镓晶片表面的差异。结果表明：砷化镓表面的自然氧化层主要由Ga2O3、As2O5、As2O3和单质As组成，表面镓砷比明显偏离理想的化学计量比，而且，氧化层的厚度随镓砷比的增大而增加；溶液处理后，砷化镓表面得到了改善。讨论了可能的机理。     

模板法制备高度有序的聚苯胺纳米纤维阵列

近年来,利用化学或物理方法制备多种材料的纳米有序阵列复合结构已成为学术界的研究热点．用具有纳米孔洞的模板(多孔阳极氧化铝、多孔硅以及聚碳酸脂膜)制备的金属、半导体、碳纳米管等材料的纳米有序阵列复合结构已在润滑、微电极、单电子器件、传感器、垂直磁记录、场致电     

Film growth and interface reaction of ultra thin 3d-transition metal oxide/metal layer structures

The interface reactions between transition metal oxide substrates and ultra thin metal layers of different thickness (<15 nm) have been investigated by using x-ray photoelectron spectroscopy (XPS). To a different extent oxidation of deposited metal and reduction of the oxidic substrate is visible for complementary layer systems. For the interface nickel oxide/manganese an enhanced reaction is found compared to the system manganeseoxide/nickel. Based on the experimental data a model of the evolving interface is proposed.     

GaAs(100)表面氧化的XPS研究

X-ray photoelectron spectroscopy（XPS）was used to study two different oxidation treatments on the GaAs（100）surface———the thermal oxidation in the air,and the ultraviolet-light oxidation in the UV-ozone. A series of properties including the oxide composition,chemical states,the surface Ga/As atomic ratio and the thickness of the oxide layer grown on GaAs surface were compared. The results indicate that the oxide composition,the surface Ga / As atomic ratio and the thickness of the oxide layer oxide on GaAs surface are different for different oxidation methods. The oxides on GaAs surface grown by thermal oxidation in the air are composed of Ga2O3,As2O5,As2O3 and elemental As;and the Ga/As atomic ratio is drifted off the stoichiometry far away. The Ga/As atomic ratio of oxide layer on GaAs surface is increases with the thickness of oxide. However,the oxides on GaAs surface grown by UV-ozone are made up of only Ga2O3 and As2O3,As2O5 and elemental As are not detected,the Ga/As atomic ratio is close to unity. The thickness of oxide layer on GaAs can be controlled by the UV exposing time. The mechanism of oxidation of GaAs is also discussed. The UV-light radiation not only causes the oxygen molecular excited forming atomic oxygen,but also induces the valence electrons of the GaAs excited from the valence band,and then the reactivity of Ga and As atom increase,and they can easily react with the excited atomic oxygen at the same reactive velocity.     

Effect of CO on surface oxidation of uranium metal

The surface reactions of uranium metal with carbon monoxide at 25 and 200 °C have been studied by X-ray photoelectron spectroscopy (XPS); respectively. Adsorption of carbon monoxide on the surface layer of uranium metal leads to partial reduction of surface oxide and results in U4f photoelectron peak shifting to the lower binding energy. The content of oxygen in the surface oxide is decreased and O1s/O4f ratio decreases with increasing the exposure of carbon monoxide. The investigation indicates the surface layer of uranium metal has resistance to further oxidation in the atmosphere of carbon monoxide.     

Adsorption of sodium dodecyl sulfate and sodium dodecyl phosphate on aluminum, studied by QCM-D, XPS, and AAS

The adsorption of two anionic surfactants, sodium dodecyl sulfate (SDS) and sodium dodecyl phosphate (SDP), at surfaces of aluminum and aluminum oxide has been studied by means of atomic absorption spectrometry (AAS), X-ray photoelectron spectroscopy (XPS), and quartz crystal microbalance with dissipation monitoring (QCM-D). It was shown that more SDP than SDS binds to the surface and that SDP prevents dissolution of aluminum in water whereas SDS does not. This was not obvious, since the adsorption isotherms of the two surfactants to aluminum pigment powder are quite similar, as shown in an earlier work. The decreased aluminum dissolution with SDP compared to SDS was explained by the formation of a more compact protective layer with less permeability on the aluminum surface with SDP than with SDS. This is explained by differences in complexing ability between the surfactants and the aluminum pigment surface. While SDP is expected to form an inner-sphere complex with aluminum, leading to a lower accessibility of aluminum sites to water, SDS is likely to form a weaker outer-sphere complex.     

Study of the self-assembling of n-octylphosphonic acid layers on aluminum oxide

The deposition of n-octylphosphonic acid on aluminum oxide was studied. The substrate was pretreated in order to achieve a root-mean-square roughness of <1 nm, a hydroxyl fraction of 30%, and a thickness of approximately 170 nm. It was proven using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) that, rather than a monolayer, an organic multilayer was formed. The growth mechanism was identified as a Stranski-Krastanov one. It was also shown that the use of AFM, probing the surface topography, is essential for a reliable quantification and interpretation of data obtained with XPS.     

XPS study on surface modification of NiTi alloy by acidic solution immersion and subsequent heating in air

Changes in the surface chemical state of a nearly equiatomic nickel–titanium (NiTi) alloy caused by immersion in aqueous solutions of HNO₃ and H₂SO₄ as well as subsequent heating in air at 723 K were analyzed using X-ray photoelectron spectroscopy (XPS). An XPS analysis using angle-resolved technique and a mathematical deconvolution technique revealed that a passive layer formed in an ambient atmosphere contained TiO₂ as a major state and Ni(OH)₂ and NiO as minor states. The Ni(OH)₂ on the alloy remained in the region even when heated in air at 723 K. Therefore, the resulting layer became a Ti-oxide layer with Ni segregated region at the surface, which was NiO formed via dehydration of Ni(OH)₂. However, immersion in an aqueous solution of HNO₃ or H₂SO₄ enables Ni(OH)₂ state to dissolve in the passive layer of a NiTi alloy; thereby, the Ni segregated region rarely appeared in the oxide layer by heating. The Ni segregated region at the surface becomes an obstacle for the inward diffusion of oxygen; thus, the annihilation of such a segregated region results in an increase in the thickness of the oxide layer.     

Spectroscopic quantification of covalently immobilized oligonucleotides

Quantitative determination of surface coverage, film thickness and molecular orientation of DNA oligomers covalently attached to aminosilane self‐assembled monolayers has been obtained using complementary infrared and photoelectron studies. Spectral variations between surface immobilized oligomers of the different nucleic acids are reported for the first time. Carbodiimide condensation was used for covalent attachment of phosphorylated oligonucleotides to silanized aluminum substrates. Fourier transform infrared (FTIR) spectroscopy and x‐ray photoelectron spectroscopy (XPS) were used to characterize the surfaces after each modification step. Infrared reflection–absorption spectroscopy of covalently bound DNA provides orientational information. Surface density and layer thickness are extracted from XPS data. The surface density of immobilized DNA, 2–3 (×10¹³) molecules cm^?2, was found to depend on base composition. Comparison of antisymmetric to symmetric phosphate stretching band intensities in reflection–absorption spectra of immobilized DNA and transmission FTIR spectra of DNA in KBr pellet indicates that the sugar–phosphate backbone is predominantly oriented with the sugar–phosphate backbone lying parallel to the surface, in agreement with the 10–20 Å DNA film thickness derived from XPS intensities. Copyright © 2004 John Wiley & Sons, Ltd.