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报道了用透射电子显微镜对单层YBCO薄膜,PZT/YBCO集成薄膜,STO/GBCO集成薄膜和STO/BTO超晶格薄膜等四种有代表性的薄膜样品的研究结果.在单层YBCO平面样品中观察到镶嵌,在生长在YBCO/STO上面生长的PZT薄膜中,观察到柱状结构.用PLD方法生长的STO/GBCO,YSZ集成薄膜中缺陷很少.虽然GBCO膜的表面并不平整,但仍能生长出c取向的GBCO薄膜.用MBE方法生长的STO/BTO多层膜具有很好的外延特征.由于晶格匹配和层状生长机制所以具有锐的界面.这些结果对改进铁电超导集成薄膜和多层膜制备工艺是有用的 相似文献
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实验研究表明,SnO2薄膜经过退火处理后其光致发光谱有明显的变化。在氧和氮两种不同气氛中进行热处理,其变化也有差异。这种变化主要是由于SnO2膜中氧空位和自由载流于浓度变化所致。 相似文献
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本文报道了基于混合物理化学气相沉积法(Hybrid physical-chemical vapordeposition,简称为HPCVD),以硅烷热解出的Si原子作硅源,在SiC衬底上原位生长了一系列硅掺杂MgB_2超导薄膜样品.样品中最大硅掺杂量是9%.与纯净的MgB_2薄膜相比较,掺杂样品的超导临界转变温度T_c没有大幅下降,超导临界电流J_c得到了一定提升.在温度为5K,外加垂直磁场为3T的条件下,样品的临界电流密度最大达到2.7×10~5Acm~(-2).同时上临界场H_(c2)在超导转变温度附近对于温度的变化曲线斜率—dH/dT也有一定的提高. 相似文献
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采用退火后处理的方法,使SiOx∶H(0<x<2)形成纳米硅与二氧化硅的镶嵌结构.利用红外透射谱、Raman谱和光致发光谱,系统地研究了不同退火温度对薄膜微结构及室温光致发光谱的影响.发现发光谱均由两个Gauss线组成,其中主峰随着退火温度的升高而红移,而位于835nm的伴峰不变.指出退火前在720—610nm的波长范围内强的主峰可能来源于膜中的非晶硅原子团,随退火温度的升高主峰的红移是由于非晶硅原子团的长大.而伴峰可能来自硅过剩或氧欠缺引入的某种发光缺陷.1170℃退火后在850n
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SiC films were prepared by pulsed XeCl laser ablation of ceramic SiC target on Si(100) substrate at temperature 850℃ and post-deposition high temperature annealing above 1100℃ (1100℃-7 Pa). The surface morphology, crystal structure, composition and chemical state of the element in the films before and after annealing were studied by X-ray diffraction, transmission electron microscopy, scanning electron microscopy, Auger electron Spectrum, X-ray photoelectron spectrum and photoluminescence methods. It was found that the films were consisted of polycrystal 4H-SiC structure before annealing and were turned into singlecrystal epitaxial 4H-SiC after annealing. The surfaces of the films were smooth and the adhesion of films with the substrate was good. The films were transparent. Excited by the laser with wavelength 290 nm at room temperature, the films emitted two luminescence bands with the peaks at 377 nm and 560 nm. The emission at 377 nm was attributed to the combination of the transmission among the valence and conductor bands, while the one at 560 nm was possibly to be from exciton emission. 相似文献
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The magnetic force images and surface topography images of sputtered Co/Au multilayer films in remnant state were measured by magnetic force microscopy. From the surface magnetic structures shown in the magnetic force images it can be seen that the domain pattern and size vary with the increase of the thickness t of the non-ferromagnetic Au layer remarkably. With the measurements of the effective perpendicular anisotropy Ku and the domain period d, it was found that there are similar trends of d and Ku as functions of t. The variations of the domain pattern and size were qualitatively interpreted in terms of magnetic domain theory. the theoretical relations of d and the domain wall energy σw vs t were calculated. As t=8.5 AL(1 AL=0.235 nm), the largest σw is 11 mJ/m2. 相似文献
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在对不同有机溶剂分子结构分析的基础上,选取甲醇、DMF(N,N-二甲基甲酰胺)和乙腈溶液为碳源,以脉冲直流电源电解有机溶液的方法在Si片上制得了含氢类金刚石薄膜(DLC薄膜),并研究了退火对薄膜结构的影响.通过X射线光电子能谱(XPS),喇曼(Raman)和红外(IR)光谱对薄膜的结构进行了分析表征.XPS表明薄膜的主要成分为C,喇曼光谱显示所得薄膜为典型DLC薄膜.喇曼和红外光谱还表明,膜中含有大量H并且主要键合于sp3碳处.随着退火的进行薄膜中的H被去除.随温度升高薄膜电阻率的下
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类金刚石薄膜
退火 相似文献
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用磁控溅射方法制备了两个具有不同Fe层厚度的[Ni80Co20(L)/Fe(tFe)]N多层膜系列样品,其中tFe=0.1和2nm.研究了两个系列样品的磁及输运性质随Ni80Co20层厚度L的变化关系.在退火态[Ni80Co20(L)/Fe(0.1nm)]N系列样品中,发现各向异性磁电阻(AMR)和横向磁电阻(TMR)在L为10nm附近存在一较宽的增强峰,其峰位与制备态[Ni80Co20(L)/Fe(2nm)]25多层膜TMR的增强峰位一致.当L小于Ni80Co20合金的电子平均自由程时,制备态[Ni80Co20(L)/Fe(0.1nm)]N样品的各向异性磁电阻(Δρ)和零场电阻率ρ都随L的减小而增加,且ρ的增量超过Δρ的增量.ρ随L的依赖关系可采用Fuchs-Sondheimer理论描述.在L小于10nm时,制备态界面掺杂[Ni80Co20(L)/Fe(0.1nm)]N系列样品的矫顽力Hc随L近似直线上升,在L大于10nm后趋于饱和.退火后Hc显著下降.实验结果表明,在多层膜结构中,界面散射可导致ρ和Δρ的增强;磁性合金界面层还可导致畴结构的改变及TMR和AMR的增强. 相似文献
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《Journal of Macromolecular Science: Physics》2013,52(6):1029-1039
Physical aging of tapes of poly-ether-ether-ketone (PEEK) drawn at 120°C to 150% elongation and aged for 2 months at room temperature and at 120°C was analyzed. The physical aging was followed mainly with thermal analysis, transport properties, and Young's modulus. Moreover, a mechanical analysis, consisting of checking the length of tapes subjected to a constant load, during a thermal run gives additional information on the aging and on the capability to crystallize. The results are consistent with the formation on small regions in which segments of chains are closely packed. 相似文献