Studies of the optical properties of sodium copolyphosphate glasses

A number of samples of glassy sodium polyphosphate and copolyphosphates of sodium — cobalt, sodium — copper, sodium — nickel, sodium-manganese and sodium — calcium were prepared and their optical properties were investigated. The ultraviolet and visible spectra of these glasses were recorded at the room temperature. It was found that the fundamental absorption edge of these glasses usually occurs in the ultraviolet — visible region. The optical absorption edges (E₀) were calculated by using the relation h ν = B (hν − E₀)² where B is constant. The linear variation of (hν)^1/2 with hν where is the absorption coefficient and hν is the incident photon energy, is taken as evidence of non-direct interband transitions. The E₀ values obtained for copolyphosphate glasses appeared to depend on the size of the counter cation. The infrared spectra of all these glasses appeared to be almost the same, indicating the presence of characteristic P --- O --- P linkages of linear polyphosphate chains and two non bridging oxygen atoms bonded to phosphorus atoms O --- P --- O (PO₂) units in the polyphosphate tetrahedra.     

Indium content determination related with structural and optical properties of InGaN layers

We studied the structural and optical properties of a set of nominally undoped epitaxial single layers of In_xGa_1−xN (0<x0.2) grown by MOCVD on top of GaN/Al₂O₃ substrates. A comparison of composition values obtained for thin (tens of nanometers) and thick (≈0.5 μm) layers by different analytical methods was performed. It is shown that the indium mole fraction determined by X-ray diffraction, measuring only one lattice parameter strongly depend on the assumptions made about strain, usually full relaxation or pseudomorphic growth. The results attained under such approximations are compared with the value of indium content derived from Rutherford backscattering spectrometry (RBS). It is shown that significant inaccuracies may arise when strain in In_xGa_1−xN/GaN heterostructures is not properly taken into account. Interpretation of these findings, together with the different criteria used to define the optical bandgap of In_xGa_1−xN layers, may explain the wide dispersion of bowing parameters found in the literature. Our results indicate a linear, E_g(x)=3.42−3.86x eV (x0.2), “anomalous” dependence of the optical bandgap at room temperature with In content for In_xGa_1−xN single layers.     

AFM investigation of step kinetics and hillock morphology of the {1 0 0} face of KDP

Step velocities and hillock slopes on the {1 0 0} face of KDP were measured over a supersaturation range of 0<σ<0.15, where σ is the supersaturation. The formation of macrosteps and their evolution with distance from the hillock top were also observed. Hillock slope depended linearly on supersaturation and hillock geometry. The two non-equivalent sectors exhibited different slopes and step velocities. AFM shows an elementary step height of 3.7 Å, or half the unit cell height, whereas previous interferometric experiments assumed the elementary step was a unit cell. Values of the step edge energy (), the kinetic coefficients for the slow and fast directions (β_S and β_F), and the activation energies for slow and fast step motion (E_a,S and E_a,F) were calculated to be 24.0 erg/cm², 0.071 cm/s, 0.206 cm/s, 0.26 eV/molecule, and 0.21 eV/molecule, respectively. Analysis of macrostep evolution including the dependence of step height on time and terrace width on distance were performed and compared to predictions of published models. The results do not allow us to distinguish between a shock wave model and a continuous step-doubling model. Analysis within the latter model leads to a characteristic adsorption time for impurities (λ⁻¹) of 0.0716 s.     

Study of group-III binary and ternary nitrides using X-ray absorption fine structure measurements

It is demonstrated that the NEXAFS spectra are a “fingerprint” of the symmetry and the composition of the binary nitrides GaN, AlN and InN, as well as of their ternary alloys In_0.16Ga_0.84N and Al_yGa_1−yN. From the angular dependence of the N-K-edge NEXAFS spectra, the hexagonal symmetry of the under study compounds is deduced and the (p_x, p_y) or p_z character of the final state is identified. The energy position of the absorption edge (E_abs) of the binary compounds GaN, AlN and InN is found to red-shift linearly with the atomic number of the cation. The E_abs of the Al_yGa_1−yN alloys takes values in between those corresponding to the parent compounds AlN and GaN. Contrary to that, the E_abs of In_0.16Ga_0.84N is red-shifted relative to that of GaN and InN, probably due to ordering and/or phase separation phenomena. The EXAFS analysis results reveal that the first nearest-neighbour shell around the N atom, which consists of Ga atoms, is distorted in both GaN and Al_xGa_1−xN for x<0.5.     

Growth and spectral properties of Nd:LaVO4 crystal

This paper reports the growth and spectral properties of 3.5 at% Nd³⁺:LaVO₄ crystal with diameter of 20×15 mm² which has been grown by the Czochralski method. The spectral parameters were calculated based on Judd–Ofelt theory. The intensity parameters Ω_λ are: Ω₂=2.102×10⁻²⁰ cm², Ω₄=3.871×10⁻²⁰ cm², Ω₆=3.235×10⁻²⁰ cm². The radiative lifetime τ_r is 209 μs and calculated fluorescence branch ratios are: β₁(0.88μm)=45.2, β₂(1.06μm)=46.7, β₃(1.34μm)=8.1. The measured fluorescence lifetime τ_f is 137 μm and the quantum efficiency η is 65.6%. The absorption band at 808 nm wavelength has an FWHM of 20 nm. The absorption and emission cross sections are 3×10⁻²⁰ and 6.13×10⁻²⁰ cm², respectively.     

A comparison of commercial sources of epitaxial material for GaN HFETs fabrication

This paper describes a comparison of material and device results obtained from AlGaN/GaN epitaxial HFET wafers from three commercial sources. Although all three sources supplied material to the same nominal specification, X-ray diffraction, Hall effect and C–V profiling revealed significant differences between them. Wafers from two of the suppliers showed poor inter-device isolation characteristics, indicative of a conducting buffer layer. Wafers from the third supplier showed excellent inter-device isolation, but C–V measurements showed that the AlGaN was about twice as thick as specified, resulting in devices with high pinch-off voltages (−16 V). For the wafers with poor buffer isolation, RF measurements on 1.2 μm gate length devices gave values of f_T 5.0 GHz and values of f_max from 8.0 to 11.7 GHz (exact values depending on DC bias conditions), while for the wafer with over-thick AlGaN the corresponding values were 8.0 and 20.0 GHz.     

Spectrally resolved electroluminescence microscopy and μ-electroluminescence investigation of GaN-based LEDs

We have studied the luminescence properties of GaN LEDs by electroluminescence microscopy (ELM) and micro-electroluminescence (μ-EL) spectroscopy. Spatial inhomogeneity in the deep level region of the spectra is observed in spectrally resolved ELM images. Room temperature μ-EL spectra measured from 5×5 μm² regions show anti-correlation of the defect-related recombination (E=1.95–2.45 eV) with the band-edge emission (E=3.18 eV).     

Investigations of g-value correlations associated with the g = 4.3 ESR signal of Fe in glass

The g = 4.3 ESR signal of Fe³⁺ in glass is usually attributed to a “fully rhombic” distortion characterized by E = D/3, where E and D are the splitting constants belonging to the second-order rhombic and axial terms, respectively, of the crystal-field interaction. An alternate statistical approach to the origin of this signal has been given by Peterson et al. on the basis of axial symmetry and broad overlapping distribution of g_| and g that are correlated in opposition (negatively) resulting in spiking at g 4.3. The present paper reports detailed computer studies of the distribution of effective g value produced by large variations in both D and E to test whether negative g-value correlations leading to spiking at g 4.3 are generable from site dependent fluctuations in the second-order crystal-field terms. It is found that the ESR line arising from the middle Kramer's doublet in the fully rhombic limit (E → D/3, |D| > hν) uniquely generates the negative g-value correlation required for spiking at g 4.3.     

The effect of the AlxGa1−xN/AIN buffer layer on the properties of GaN/Si(1 1 1) film grown by NH3-MBE

We describe the growth of GaN on Si(1 1 1) substrates with Al_xGa_1−xN/AlN buffer layer by ammonia gas source molecular beam epitaxy (NH₃-GSMBE). The influence of the AlN and Al_xGa_1−xN buffer layer thickness and the Al composition on the crack density of GaN has been investigated. It is found that the optimum thickness is 120 and 250 nm for AlN and Al_xGa_1−xN layers, respectively. The optimum Al composition is between 0.3<x<0.6.     

Compositional dependence of the optical gap in Ge1−xSx, Ge40−xSbxS60 and (As2S3)x(Sb2S3)1−x non-crystalline systems

An attempt is made to calculate the compositional dependence of the optical gap (E_g) in Ge_1−xS_x, Ge_40−xSb_xS₆₀ and (As₂S₃)_x(Sb₂S₃)_1−x non-crystalline systems in an alloy-like approach. From the comparison of both the experimental dependence of E_g and the calculated ones using the Shimakawa relation [E_{g AB} = YE_{g A} + (1−Y)E_{g B}] it is assumed that this equation is useful for such systems or parts of the systems which behave like almost ideal solutions.     

Growth and spectral properties of Nd-doped Sr3Y(BO3)3 crystal

A new crystal of Nd³⁺:Sr₃Y(BO₃)₃ with dimension up to 25×35 mm² was grown by Czochralski method. Absorption and emission spectra of Nd³⁺: Sr₃Y(BO₃)₃ were investigated . The absorption band at 807 nm has a FWHM of 18 nm. The absorption and emission cross sections are 2.17×10⁻²⁰ cm² at 807 nm and 1.88×10⁻¹⁹ cm² at 1060 nm, respectively. The luminescence lifetime τ_f is 73 μs at room temperature     

Impedance spectroscopy analysis of AlGaN/GaN HFET structures

For HFET application a series of samples with 30 nm Al_xGa_1−xN (x=0.02–0.4) layers deposited at 1040°C onto optimised 2 μm thick undoped GaN buffers were fabricated. The Al_xGa_1−xN/GaN heterostructures were grown on c-plane sapphire in an atmospheric pressure, single wafer, vertical flow MOVPE system. Electrical properties of the Al_xGa_1−xN/GaN heterostructures and thick undoped GaN layers were evaluated by impedance spectroscopy method performed in the range of 80 Hz–10 MHz with an HP 4192A impedance meter using a mercury probe. The carrier concentration distribution through the layer thickness and the sheet carrier concentration were evaluated. A non-destructive, characterisation technique for verification of device heterostucture quality from the measured C–V and G–V versus frequency characteristics of the heterostructure is proposed.     

Growth and properties of (Pb0.90La0.10)TiO3 thick films prepared by RF magnetron sputtering with a PbO buffer layer

The (Pb_0.90La_0.10)TiO₃ [PLT] thick films (3.0 μm) with a PbO buffer layer were deposited on the Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by RF magnetron sputtering method. The PLT thick films comprise five periodicities, the layer thicknesses of (Pb_0.90La_0.10)TiO₃ and PbO in one periodicity are fixed. The PbO buffer layer improves the phase purity and electrical properties of the PLT thick films. The microstructure and electrical properties of the PLT thick films with a PbO buffer layer were studied. The PLT thick films with a PbO buffer layer possess good electrical properties with the remnant polarization (P_r=2.40 μC cm⁻²), coercive field (E_c=18.2 kV cm⁻¹), dielectric constant (ε_r=139) and dielectric loss (tan δ=0.0206) at 1 kHz, and pyroelectric coefficient (9.20×10⁻⁹ C cm⁻² K⁻¹). The result shows the PLT thick film with a PbO buffer layer is a good candidate for pyroelectric detector.     

MBE growth of cubic AlyGa1−yN/GaN heterostructures—structural, vibrational and optical properties

Cubic Al_yGa_1−yN/GaN heterostructures on GaAs(0 0 1) substrates were grown by radio-frequency plasma-assisted molecular beam epitaxy. High resolution X-ray diffraction, micro-Raman, spectroscopic ellipsometry, and cathodoluminescence measurements were used to characterize the structural, optical and vibrational properties of the Al_yGa_1−yN epilayers. The AlN mole fraction y of the alloy was varied between 0.07<y<0.20. X-ray diffraction reciprocal space maps demonstrate the good crystal quality of the cubic Al_yGa_1−yN films. The measured Raman shift of the phonon modes of the Al_yGa_1−yN alloy was in excellent agreement with theoretical calculations. Both SE and CL of the Al_yGa_1−yN epilayer showed a linear increase of the band gap with increasing Al-content.     

Boron-doped a-SiOx:H films prepared by photo-CVD technique

The optoelectronic and structural properties of p-type a-SiO_x:H films have been studied. The deposition parameters e.g. chamber pressure and diborane to silane ratio are optimized to get a film with dark conductivity (σ_d) 7.9×10⁻⁶ S cm⁻¹ and photoconductivity 9.3×10⁻⁶ S cm⁻¹ for an optical gap (E₀₄) of 1.94 eV. The decrease of optical gap accompanied by the increase of conductivity is due to less oxygen incorporation in the film, which is substantiated by the decrease of the intensity of SiO absorption spectra. The properties are very much effected by the chamber pressure and diborane to silane ratio.     

The photoluminescence of ZnO thin films grown on Si (1 0 0) substrate by plasma-enhanced chemical vapor deposition

High-quality ZnO thin films have been grown on a Si(1 0 0) substrate by plasma-enhanced chemical vapor deposition (PECVD) using a zinc organic source (Zn(C₂H₅)₂) and carbon dioxide (CO₂) gas mixtures at a temperature of 180°C. A strong free exciton emission with a weak defect-band emission in the visible region is observed. The characteristics of photoluminescence (PL) of ZnO, as well as the exciton absorption peak in the absorption spectra, are closely related to the gas flow rate ratio of Zn(C₂H₅)₂ to CO₂. Full-widths at half-maximum of the free exciton emission as narrow as 93.4 meV have been achieved. Based on the temperature dependence of the PL spectra from 83 to 383 K, the exciton binding energy and the transition energy of free excitons at 0 K were estimated to be 59.4 meV and 3.36 eV, respectively.     

Electrical properties of photoanodically generated thin oxide films on n-GaN

The characteristics of photoelectrochemically (PEC) generated gallium oxide films on n-GaN using an 0.002 M KOH electrolyte are described. The chemical composition of the resistive layers was analyzed by Auger electron spectroscopy. The DC and HF characteristics of Al/Ti/PEC-Ga₂O₃ (gallium sesquioxide)/GaN structures were studied with current–voltage and capacitance–voltage measurements, respectively. Under reverse bias we found extremely low leakage currents (<10⁻⁸ Acm⁻² at −15 V) and a very low interface state density; high-temperature operation (up to 166°C tested) motivates the integration of the described dielectric layer forming technique into GaN based device process schemes. Our method may also be employed as gate recess technology.     

Properties of ZnO films grown on (0 0 0 1) sapphire substrate using H2O and N2O as O precursors by atmospheric pressure MOCVD

In this paper, we compare the properties of ZnO thin films (0 0 0 1) sapphire substrate using diethylzinc (DEZn) as the Zn precursor and deionized water (H₂O) and nitrous oxide (N₂O) as the O precursors, respectively in the main ZnO layer growth by atmospheric pressure metal–organic chemical vapor deposition (AP-MOCVD) technique. Surface morphology studied by atomic force microscopy (AFM) showed that the N₂O-grown ZnO film had a hexagonal columnar structure with about 8 μm grain diameter and the relatively rougher surface compared to that of H₂O-grown ZnO film. The full-widths at half-maximum (FWHMs) of the (0 0 0 2) and () ω-rocking curves of the N₂O-grown ZnO film by double-crystal X-ray diffractometry (DCXRD) measurement were 260 and 350 arcsec, respectively, indicating the smaller mosaicity and lower dislocation density of the film compared to H₂O-grown ZnO film. Compared to H₂O-grown ZnO film, the free exciton A (FX_A) and its three phonon replicas could be clearly observed, the donor-bound exciton A⁰X (I₁₀):3.353 eV dominated the 10 K photoluminescence (PL) spectrum of N₂O-grown ZnO film and the hydrogen-related donor-bound exciton D⁰X (I₄):3.363 eV was disappeared. The electron mobility (80 cm²/V s) of N₂O-grown ZnO film has been significantly improved by room temperature Hall measurement compared to that of H₂O-grown ZnO film.     

Effect of steady ampoule rotation on radial dopant segregation in vertical Bridgman growth of GaSe

For vertical Bridgman growth of the nonlinear optical material GaSe in an ampoule sufficiently long that flow and dopant transport are not significantly influenced by the upper free surface, we show computationally that steady rotation about the ampoule axis strongly affects the flow and radial solid-phase dopant segregation. Radial segregation depends strongly on both growth rate U and rotation rate Ω over the ranges 0.25 μms⁻¹U3.0 μms⁻¹ and 0Ω270 rpm. For each growth rate considered, the overall radial segregation passes through two local maxima as Ω increases, before ultimately decreasing at large Ω. Rotation has only modest effects on interface deflection. Radial segregation computed using a model with isotropic conductivity (one-third the trace of the conductivity tensor) predicts much less radial segregation than the “correct” model using the anisotropic conductivity, with the segregation decreasing monotonically with Ω. Consideration of a model in which centrifugal acceleration is deliberately omitted shows that, as Ω increases, diminution and ultimately disappearance of the “secondary” vortex lying immediately above the interface is due to centrifugal buoyancy, while axial distension of the larger “primary” vortex above is due to Coriolis effects. These results, which are qualitatively different from those accounting for centrifugal buoyancy, suggest that several earlier computational and analytical predictions of rotating vertical Bridgman growth are either limited to rotation rates sufficiently low that centrifugal buoyancy is unimportant, or are artifacts associated with its neglect. The overall radial segregation depends approximately linearly on the product of and the growth rate U for the conditions considered, where is the segregation coefficient.     

Temperature quenching mechanisms for photoluminescence of MBE-grown chlorine-doped ZnSe epilayers

We report on a detailed investigation on the temperature-dependent behavior of photoluminescence from molecular beam epitaxy (MBE)-grown chlorine-doped ZnSe epilayers. The overwhelming neutral donor bound exciton (Cl⁰X) emission at 2.797 eV near the band edge with a full-width at half-maximum (FWHM) of 13 meV reveals the high crystalline quality of the samples used. In our experiments, the quick quenching of the Cl⁰X line above 200 K is mainly due to the presence of a nonradiative center with a thermal activation energy of 90 meV. The same activation energy and similar quenching tendency of the Cl⁰X line and the I₃ line at 2.713 eV indicate that they originate from the same physical mechanism. We demonstrate for the first time that the dominant decrease of the integrated intensity of the I₃ line is due to the thermal excitation of the “I₃ center”-bound excitons to its free exciton states, leaving the “I₃ centers” as efficient nonradiative centers. The optical performance of ZnSe materials is expected to be greatly improved if the density of the “I₃ center” can be controlled. The decrease in the luminescence intensity at moderately low temperature (30–200 K) of the Cl⁰X line is due to the thermal activation of neutral-donor-bound excitons (Cl⁰X) to free excitons.