模板法合成Co纳米线有序阵列的偏光特性

Co nanowire arrays were prepared by anodic alumina oxide template，which formed during DC superposed pulse source anodization process. The structure of porous alumina template and properties of optical polarization of Co nanowire arrays are studied with the help of the scanning electron microscope， X-ray diffraction and infrared spectroscopy. The results showed that Co nanowire arrays have an excellent polarization property in near infrared region in 2700nm. We also found that the properties of optical polarization can also be controlled by adulterating kinds of electrodepositing metal and its alloys， by controlling length of nanowire， and by changing incidence angle.     

化学沉积法制备Ni-P纳米线与纳米管有序阵列

以多孔氧化铝膜为模板, 在室温下的酸性化学镀镍槽中通过化学沉积法生长出纳米线与纳米管有序阵列. 分别用X射线衍射仪(XRD)与透射电子显微镜(TEM)对纳米线、纳米管阵列进行表征. 并通过对纳米线与纳米管的生长方式进行分析比较, 系统地研究了多孔氧化铝模板的前处理对纳米阵列生长的影响. 结果表明, 生成的纳米线与纳米管均为非晶态的镍磷合金. 室温下镍纳米管的生成主要取决于敏化、活化过程, 而当纳米管的厚度达到一定程度后就不再随时间变化.     

铅纳米线阵列的制备

使用电化学沉积方法,在有序的氧化铝模板(AAO)孔洞中制备了铅纳米线有序阵列。用X射线衍射仪(XRD)、场发射扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)对样品的结构、形貌、进行表征和观测。XRD的结果表明所制备的样品为纯的立方面心铅,且纳米线生长沿<220>有很好的取向。FE-SEM的图片清晰地说明铅纳米线阵列是大面积、高填充率和高度有序的。TEM的结果显示纳米线直径均匀、表面光滑且长径比大。     

大面积Bi单晶纳米线阵列的制备

在有序的氧化铝模板(AAO)的孔洞中, 采用电化学沉积工艺成功地制备了准金属Bi纳米线有序阵列. 使用X射线衍射仪(XRD)、场发射扫描电子显微镜(FE-SEM)、透射电子显微镜(TEM)及高分辨电子显微镜(HRTEM)对样品的结构和形貌进行了表征. XRD结果表明, 所制备的铋样品为六方相, 且沿[110]方向有很好的生长取向; FE-SEM图片清晰地说明铋纳米线阵列是大面积、填充率高和高度有序的; TEM的结果显示纳米线直径均匀、表面光滑且长径比大; HRTEM图片中清晰的晶格条纹和选区电子衍射(SAED)结果表明纳米线是单晶.     

单晶Ni纳米线阵列的制备与磁性能

采用恒电流沉积方法, 在多孔阳极氧化铝(AAO)模板中制备出了具有单晶结构的Ni纳米线阵列. 采用扫描电子显微镜(SEM)、透射电子显微镜(TEM)和X射线衍射(XRD)技术对制备的Ni纳米线阵列的形貌及结构进行了表征. 利用振动样品磁强计(VSM)对单晶Ni纳米线阵列的磁性能进行了研究. 结果表明, 单晶镍纳米线阵列的易磁化方向为纳米线轴向, 并且与多晶纳米线相比显示出了更高的矫顽力. 直径为30 nm的纳米线具有较高的矫顽力(8.236×104 A/m)和较高的剩磁比(Mr＝0.94Ms).     

循环伏安法制备Ag纳米线阵列

In this paper, highly ordered anodic aluminum oxide (AAO) template with hexagonal close-packed arrays was successfully fabricated through a two-step anodization process. Ag nanowire arrays with high aspect ratio were prepared using cyclic voltammetry within the confined nanochannels of AAO template. In addition, standing Ag nanowire arrays free-support of templates were also fabricated successfully by cyclic voltammetry method. The micrographs and crystal structures of Ag nanowires were studied by field emission scanning electron microscope (FESEM) and X-ray diffraction (XRD). FESEM observation showed that the Ag nanowire arrays with high aspect ratio lie orderly on the surface of the substrate. The diameter of the Ag nanowire is about 60 nm and the length up to 30 μm or more. While the controlled nanowire arrays exhibit highly ordered structure in large area and the standing Ag nanowire in the array has the length of 1 μm and good orientation. XRD results illustrated that the Ag nanowires in the arrays deposited by cyclic voltammetry method have a face centered cubic structure and are preferentially oriented in the (220) direction.     

Co、Ni及其合金纳米线阵列的制备及磁性研究

采用交流电化学沉积法,在多孔阳极氧化铝(AAO）模板孔洞中成功组装了铁磁性金属Co、Ni、CoNi合金纳米线阵列并采用扫描电子显微镜(SEM）、X射线衍射(XRD）等对样品进行表征。结果表明,Co、Ni及CoNi合金阵列体系中纳米线均匀有序,形状各向异性较大(长径比达30以上）,有显著的结晶择优取向。对Co、Ni、CoNi合金纳米线阵列体系进行磁性分析,振动样品磁强计(VSM）测试结果显示,纳米线有明显的磁各向异性,适合用作垂直磁记录介质。纳米线阵列退火后沿纳米线方向矫顽力和矩形比减小,样品的垂直磁各向异     

氧化铁纳米线阵列的溶胶-凝胶模板法制备与表征

0引言氧化铁在颜料、磁记录材料和催化剂等方面具有广泛的应用[1,2]。尤其是纳米氧化铁在纳米尺度具有良好的气敏特性[3]。纳米材料可以分为零维、一维、二维纳米材料,一维材料是纳米材料的重要组成部分,是纳米组装的基础。一维纳米材料的制备方法中氧化铝模板法占有极其重要的     

Sb有序单晶纳米线阵列的制备

采用直流电沉积的方法在氧化铝模板（AAM）中成功地制备了Sb单晶纳米线阵列. X射线衍射（XRD）证明所制得的纳米线阵列为(110)取向的六方相Sb.透射电镜（TEM）显示Sb纳米线平滑而均匀,直径40～50 nm,长径比大于1000.选区电子衍射（SAED）结果表明,所制得的纳米丝为Sb单晶丝.场发射扫描电镜（FE-SEM）显示Sb纳米线阵列规则,填充率接近100％.     

电化学制备有序聚苯胺纳米线阵列

以有序碳纳米管阵列电极为基底电极,在硫酸或高氯酸溶液中,分别探明不同电化学聚合方法以及苯胺单体浓度对聚苯胺形貌的影响. 结果表明：采用循环伏安法无法制备出聚苯胺纳米线;而应用恒电位法虽可制得聚苯胺纳米线,但纳米线不能形成有序阵列;只有应用恒电流方法,并且以高浓度苯胺的高氯酸溶液作为聚合溶液,方能制得有序聚苯胺纳米线阵列.     

液晶模板法合成CdS纳米线

以六方液晶为模反合成了ＣｄＳ纳米线,纳米线生长在表面活性剂分子形成的六方堆积的空隙水相内,呈平行排布,直径为１．５ｎｍ     

钴纳米线的模板制备与磁性

利用二次阳极氧化法制备了多孔阳极氧化铝模板. 用直流电化学沉积方法成功地在模板孔道内制备了钴纳米线. 采用扫描电子显微镜(SEM)、X射线衍射仪(XRD)和振动样品磁强计(VSM)对样品的形貌、晶体结构和磁性进行了研究. 结果表明， 模板的孔径均匀, 孔道平直. 钴纳米线为多晶的六方密堆积结构. 钴纳米线具有明显的磁各向异性, 这主要起源于纳米线的形状各向异性.     

Copper‐Based Ternary and Quaternary Semiconductor Nanoplates: Templated Synthesis,Characterization, and Photoelectrochemical Properties

Two‐dimensional (2D) copper‐based ternary and quaternary semiconductors are promising building blocks for the construction of efficient solution‐processed photovoltaic devices at low cost. However, the facile synthesis of such 2D nanoplates with well‐defined shape and uniform size remains a challenge. Reported herein is a universal template‐mediated method for preparing copper‐based ternary and quaternary chalcogenide nanoplates, that is, CuInS₂, CuIn_xGa_1?xS₂, and Cu₂ZnSnS₄, by using a pre‐synthesized CuS nanoplate as the starting template. The various synthesized nanoplates are monophasic with uniform thickness and lateral size. As a proof of concept, the Cu₂ZnSnS₄ nanoplates were immobilized on a Mo/glass substrate and used as semiconductor photoelectrode, thus showing stable photoelectrochemical response. The method is general and provides future opportunities for fabrication of cost‐effective photovoltaic devices based on 2D semiconductors.     

Synthesis and Electrochemical Properties of Highly Crystallized CuV2O6 Nanowires

CuV₂O₆ nanowires were prepared via a simple hydrothermal route using NH₄VO₃ and Cu(NO₃)₂ as starting materials. The structures and electrochemical properties of CuV₂O₆ nanowires were characterized by means of X-ray diffraction(XRD), scanning electron microscopy(SEM) and transmission electron microscopy(TEM). The results show that the CuV₂O₆ nanowires are about 100 nm in width and single crystalline grown along [001] direction. CuV₂O₆ nanowires delivered a high initial discharge capacity of 435 and 351 mA·h/g at current densities of 50 and 100 mA·h/g, respectively. The electrochemical kinetics of the CuV₂O₆ nanowires was also investigated by means of electrochemical impedance spectroscopy(EIS) and the poor rate performance was observed, which may be attributed to the low ion diffusion coefficient of the CuV₂O₆ nanowires.     

非晶Co-Pt合金纳米线有序阵列的制备及其磁学性质

通过直流电沉积方法，以多孔阳极氧化铝(AAO)为模板，在室温下成功制备出一维非晶态Co-Pt合金纳米线有序阵列. SEM和TEM分析表明：纳米线长度均约10 μm，直径35 nm；纳米线在阳极氧化铝模板孔内互相平行. XRD结果表明，制备的纳米线为非晶态结构，经过700 ℃退火处理后则转变为面心立方(FCC)多晶结构. 采用VSM(振动样品磁强计)对退火处理前后样品的矫顽力和剩磁比进行研究，结果表明：当外加磁场与纳米线平行时，非晶态Co-Pt合金纳米线的矫顽力高达1700 Oe，剩磁比为0.83，表现出明显的垂直磁各向异性；而退火处理则使其优秀的磁学性质消失. 退火前后不同的磁学性质源于其不同的微观结构. 非晶态的Co-Pt合金纳米线由于无磁晶各向异性竞争，进而使得由纳米线一维形态引起的形状各向异性起主导作用，使其显示了很好的垂直磁各向异性；而多晶样品由于磁晶各向异性与形状各向异性竞争，导致矫顽力和剩磁比迅速降低.     

原硅酸镉纳米线的合成与表征

硅酸盐因其基本结构单元[SiO4]四面体可通过共用顶点连接成各种结构形式,易形成具有大比表面积的多孔结构,且具有良好的热稳定性和化学稳定性,目前已广泛用于选择性催化、分子筛、气体的吸附与分离等领域．另外,硅酸盐还是一类优良的发光材料基质．如Mn^2 或其它稀土离子激活的Zn2SiO4、Mg2SiO4和CdSiO3等．由于原料来源广泛和价格低廉．硅酸盐的研究已引起人们的关注．     

Synthesis and Magnetic Properties of Manganese-Doped GaP Nanowires

We characterized the structure and magnetic properties of Mn-incorporated GaP nanowires synthesized by thermal evaporation of GaP/Mn powders. The nanowires consist of twin-crystalline zinc blende GaP grown with the [111] direction and doped with about 1 at. % Mn. They are often sheathed with the bumpy amorphous outerlayers containing high concentrations of Mn and O. The ferromagnetic hysteresis curves at 5 and 300 K and temperature-dependent magnetization provide evidence for the ferromagnetism with the Curie temperature higher than room temperature. Magnetic properties of individual nanowires have been measured, showing a large negative magnetoresistance equal to about -5% at 5 K. We suggest that the Mn doping of GaP nanowires would form a dilute magnetic semiconductor.     

聚吡咯纳米线的恒电位合成及形貌分析

采用恒电位法,直接在石墨电极表面快速合成聚吡咯纳米线,并重点研究了聚吡咯纳米线的生成过程及形貌变化规律。结果表明,聚吡咯纳米线的生成包括成核和生长过程,纳米线的形貌随聚合条件的不同而变化,直径随聚合电位、吡咯单体浓度、电解质浓度的升高而增大,这是由于不同聚合条件下聚吡咯的成核速率不同引起的。     

线状和树枝状银纳米结构、形成机理及表面增强拉曼散射性质(英文)

以聚丙烯酰胺(PAM)为模板,在液相中通过不同浓度的抗坏血酸还原硝酸银能够得到缠结的线状和树枝状银纳米结构.该方法合成条件温和(常温常压)、产率高、成本低、操作简单,并且得到了特殊形貌的缠结收光在谱一对起线的状线和状树银枝纳状米银结纳构.米通结过构透的射形电貌子和显性微质镜进(T行E了M)表,扫征描.研电究子表显明微,镜PA(SMEM对)线、拉形曼产光物谱的和形紫成外起?可了见决吸定性作用.在反应初期,大量新生成的银核被PAM链吸附,小颗粒逐渐长大,进而相连,导致生成了缠结的线状银纳米结构.另外,抗坏血酸的浓度越高,越不利于线状结构的生成.利用对巯基苯胺(PATP)为探针分子研究了银纳米结构的表面增强拉曼散射(SERS)活性,结果表明线状银纳米结构具有较强的表面增强拉曼散射效果.     

Co3O4纳米线的丙三醇辅助合成及其电化学性质

以硝酸钴和丙三醇为反应物通过反应条件的改变控制制备出Co3O4纳米线.利用粉末X射线衍射(XRD),扫描电子显微镜(SEM)和透射电子显微镜(TEM)对产物的形貌与结构进行了表征.实验发现,在低扫描速率下,Co3O4纳米线电极的循环伏安(CV)曲线呈现出两对氧化还原峰.恒电流充放电实验中,氧化钴纳米线电极在1A.g-1电流密度下的电容为163F.g-1;在1和4A.g-1条件下,其容量随循环次数的增加先上升后下降,1000次充放电循环后容量保持率分别在98%和80%以上,继续增加循环次数则容量下降比较明显.锂离子电池性质测试中,氧化钴纳米线的放电容量为1124mAh.g-1,然而放电容量随循环次数增加下降较快.基于实验结果,对Co3O4纳米线的形成机理及其结构与电化学性质之间的关系进行了探讨.