Stability and surface properties of GeSi alloy films on Si(111) substrate

Several GeSi alloy films with different surface properties were prepared from a 500 Å thick Ge film that had previously been grown on a Si(111)-7×7 substrate by molecular beam epitaxy. The films were prepared by combinations of sputtering, annealing and Ge deposition from an evaporator. The surface properties were studied by Auger electron spectroscopy (AES) and by low energy electron diffraction (LEED). A novel LEED system employing position-sensitive detection was used. The Ge film surface gave a superposition of 7×7 and c(2×8) LEED patterns. A 7×7 → 1×1 phase transition was observed at 425±10°C. An irreversible 7×7 → c(2×8) transition was observed when the sample was heated above 500°C. The Ge film melted at 750±30°C and formed a Ge_xSi_1−x (x = 0.85±0.05) alloy whose surface gave a 7×7 LEED pattern. A 7×7 → 1×1 phase transition was observed at 600±0.15°C. Prolonged sputtering and annealing resulted in a Ge_xSi_1−x (x = 0.53±0.05) alloy whose surface gave a 5×5 LEED pattern. An apparent 5×5 → 1×1 phase transition was observed at 870±10°C but at that temperature the film was converted irreversibly to one with a much lower Ge atom fraction (x = 0.025±0.005) whose surface gave a 7×7 LEED pattern. A surface with a 5×5 pattern identical to that for the x = 0.53 alloy was prepared by deposition or Ge on Si. A similar 5×5 surface was prepared by deposition of Ge on a facetted GeSi alloy surface originally showing a superposition of 5×5 and 7×7 patterns. The intensity distributions in all of the 7×7 LEED pattern were found to be similar to those for Si(111)-7×7 at nearly the same electron energies. The characteristics of the 7×7 → 1×1 phase transitions were discussed in direct comparison with those of the Si(111)7×7 → 1×1 and Ge(111)-c(2×8) → 1×1 transitions observed with the same LEED system.     

Solid phase epitaxial growth of Si on Si---Sb surface phases for the formation of δ-doped layers and δiδi-superlattices

The SPE growth of Si on Si---Sb surface phases has been studied by LEED and AES techniques. The surface phases studied were the disordered Si(100)---Sb and the ordered one. Both surface phases have an Sb coverage of about one monolayer. Structures with single δ-doped layers and a δiδi-superlattice have been grown. The structural perfection of the grown Si films has been characterized on the basis of LEED data. The peculiarities of the annealing behaviour of Si films thinner than 10 nm have been detected.     

A multitechnique surface science examination of Sn deposition on Pt(100)

Interfaces prepared by vapor deposition of Sn onto Pt(100) surfaces have been examined using the following techniques: Auger electron and X-ray photoelectron spectroscopy (AES and XPS), low-energy electron diffraction (LEED), and low-energy ion surface scattering (LEISS) with Ne⁺ ions. Tin deposition was conducted at 320 and 600 K, and the surface composition and order was examined as a function of further annealing to 1200 K. The AES uptake plots (signal versus deposition time) indicate that the Sn growth mode can be described by a layer-by-layer process only up to one adayer at 320 K. Some evidence of 3D growth is inferred from LEED and LEISS data for higher Sn coverages. For deposition at 600 K, AES data indicate significant interdiffusion and surface alloy formation. LEED observations (recorded at a substrate temperature of 320 K) show that the characteristic hexagonal Pt(100) reconstruction disappears with Sn exposures of 4.6 × 10¹⁴ atoms cm² (θ_Sn = 0.35 monolayer (ML)). Further Sn deposition results in a c(2 × 2) LEED pattern starting at a coverage of slightly above 0.5 ML. The c(2 × 2) LEED pattern becomes progressively more diffuse with increasing Sn exposure with eventual loss of all LEED features above 2.2 ML. Annealing experiments with various precoverages of Sn on Pt(100) are also described by AES, LEED, and LEISS results. For specific Sn precoverages and annealing conditions, c(2 × 2), p(3√2 × √2)R45°, and a combination of the two LEED patterns are observed. These ordered LEED patterns are suggested to arise from ordered PtSn surface alloys. In addition, the chemisorption of CO and O₂ at the ordered annealed Sn/Pt(100) surfaces was also examined using thermal desorption mass spectroscopy (TDMS), AES, and LEED.     

A study of Ga layers on Si(1 0 0)-(2 × 1) by SR-PES: Influence of adsorbed water

Results for deposition and thermal annealing of gallium on the Si(1 0 0)-(2 × 1) surface achieved by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) are presented. In addition to deposition of Ga on a clean surface, the influence of water adsorption on the arrangement of gallium atoms was also studied. The results on Ga deposition at a higher temperature (490 °C) are consistent with a Ga ad-dimer model showing equivalent bond arrangement of all Ga atoms for coverages up to 0.5 ML. The deposition onto a surface with adsorbed water at room temperature led to a disordered gallium growth. In this case gallium atoms bind to silicon dimers already binding fragments of adsorbed water. A subsequent annealing of these layers leads to a surface structure similar to the Ga-(2 × 2), however, it is less ordered, probably due to the presence of silicon oxides formed from water fragments.     

Magnetic Properties of Fe/Ni and Fe/Co Multilayer Thin Films

In this work, the magnetic and transport properties of Fe/SiO₂/Ni and Fe/SiO₂/Co multilayers grown on Si/SiO₂ substrates have been studied. The samples have been prepared by two-stage deposition process. In the first stage, Fe layer and SiO₂ interlayer of both samples are grown by ion beam deposition technique at room temperature. Then the samples are taken out to ambient atmosphere and loaded into a pulse laser deposition (PLD) chamber. Prior to the deposition of top layer, the samples are cleaned by annealing at 150 °C. In the second stage, Ni (or Co) layer is prepared by PLD technique at room temperature. The thickness of deposited layers has been measured by Rutherford back scattering (RBS). Magnetic properties of ferromagnetic bilayers have been investigated by room-temperature ferromagnetic resonance (FMR) and vibrating sample magnetometer (VSM) techniques. Standard four-point magneto-transport measurements at various temperatures have been performed. Two-step switching in the in-plane hysteresis loops of Fe/SiO₂/Ni and Fe/SiO₂/Co samples is observed. A crossing in the middle of hysteresis loops of both samples points to a weak antiferromagnetic interaction between the magnetic layers of the stacks. Saturation magnetization values have been obtained from the VSM measurements of samples with DC magnetic field perpendicular to the films surface. Magneto-transport measurements have shown the predominant contribution of anisotropic magnetic resistance both at room and low temperatures. FMR studies of Fe/SiO₂/Ni and Fe/SiO₂/Co samples have revealed additional non-uniform (surface and bulk SWR) modes, which behavior has been explained in the framework of the surface inhomogeneity model. An origin of the antiferromagnetic interaction has been discussed.     

Sr/Si界面沉积SrTiO3初始生长阶段的扫描遂道显微术研究

本文工作利用脉冲激光沉积术(PLD)和超高真空扫描隧道显微术(UHV-STM),研究了在Sr/Si(001)-(2×1)衬底表面上真空室温沉积几个单层SrTiO₃薄膜的初始生长过程.经660 ℃退火处理后,Sr/Si衬底表面上形成了纳米岛状结构.经分析,这些纳米小岛为C49-TiSi₂和 C54-TiSi₂.实验结果表明,在没有氧气的情况下退火,Sr/Si界面无法有效阻止SrTiO₃薄膜与Si衬底之间的相互作用. 关键词： 脉冲激光沉积术(PLD) 扫描隧道显微镜(STM) 3')" href="#">SrTiO₃ 2')" href="#">C54-TiSi₂     

Growth and alloy formation of ultrathin Ni films on Co/Pt(1 1 1)

Low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES) were used to study the growth and the structural evolution of Ni/Co/Pt(1 1 1) following high-temperature annealing. From the oscillation of the specular beam of the LEED and Auger uptake curve, we concluded that the growth mode of thin Ni films on 1 ML Co/Pt(1 1 1) is at least 2 ML layer-by-layer growth before three-dimensional island growth begins. The alloy formation of Ni/1 ML Co/Pt(1 1 1) was analyzed by AES. The temperature for the intermixing of Ni and Co layers in the upper interface without diffusing into the bulk of Pt is independent of the thickness of Ni when a Co buffer is one atomic monolayer. After the temperature was increased, formations of Ni-Co-Pt alloy, Ni-Pt alloy and Co-Pt alloy were observed. The temperature required for the Ni-Co intermixing layer to diffuse into Pt bulk increases with the thickness of Ni. The interlayer distance as a function of annealing temperature for 1 ML Ni/1 ML Co/Pt(1 1 1) was calculated from the I-V LEED. The evolution of LEED patterns was also observed at different annealing temperatures.     

Carrier storage in Ge nanoparticles produced by pulsed laser deposition

In this work, we report on the electrical characterization of Ge nanoparticles (NPs) produced by pulsed laser deposition (PLD) at room temperature (RT) in Ar gas inert atmosphere using a shadowed off‐axis deposition geometry. Our results show that functional thin films of crystalline Ge NPs embedded between thin alumina films can be obtained on p‐type Si(100) substrates following a low temperature and short rapid thermal annealing (RTA) treatment. Metal–oxide–semiconductor (MOS) structures with and without Ge NPs embedded in the alumina were prepared for the electrical measurements. The results indicate a strong memory effect at relatively low programming voltages (±4 V) due to the presence of Ge NPs. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of impurities on the surface structures and fault generation in homoepitaxial Si (111) films

In situ LEED studies of the homoepitaxial growth of Si(111) films by uhv sublimation, indicate a strong correlation between the type of surface structure generated and the metallic impurity content of the silicon substrates as estimated from minority carrier lifetimes. The development of the familiar Si (111)−7 × 7 structure is favored by the presence of lifetime-killing impurities in the substrate. Experiments where Fe is introduced on high lifetime substrates prior to annealing and film growth, suggest that this impurity species plays a role in the generation of the 7 × 7 surface structure. Electron microscopy reveals that homoepitaxial Si(111) layers are generally faulted, the number density of which increases progressively as the growth temperature is lowered and the deposition rate increased. Films deposited on high lifetime silicon contain substantially fewer stacking faults than those grown on low lifetime substrates. These results suggest that the faults originate at the substrate surface at microprecipitates consisting of fast diffusing, low solubility impurity species.     

Photoemission studies of the interactions of CdTe and Te with Si(100)

The interactions between CdTe, and in particular Te, and the (100) surface of Si have been probed using photoemission and low energy electron diffraction with a view to investigating the mechanisms responsible for (100) and (111) growth orientations for CdTe on Si(100). The interfacial reactions have been studied both on room temperature deposition followed by annealing and on depositions at typical epitaxial growth temperatures. In both cases the same precursor stage of an ordered submonolayer of Te on the Si(100) surface has been identified. Line shape analysis of the Si 2p core level has suggested a structural model in which Te adatoms make up an incomplete monolayer bound in bridge sites. This model is in excellent agreement both with the (1 × 1) LEED pattern and recent SEXAFS studies of this surface. The implications of the cubic symmetry of this surface in terms of the subsequent growth orientation of CdTe are discussed. Termination of the surface by Te was also seen to induce band bending suggestive of Fermi level pinning at around midgap, in contrast to the passivating behaviour of other group VI elements on this surface. The Si 2p core level line shape analysis on termination by Te has also provided evidence to support the “covalent dimer” interpretation of the clean dimerised Si(100) surface.     

Effect of annealing temperature on density of ZnO quantum dots

ZnO quantum dots (QDs) were fabricated on Si (001) substrates by pulsed laser deposition (PLD) and subsequent thermal annealing. X-ray diffraction and transmission electron microscopy analyses revealed that the ZnO QDs had polycrystalline hexagonal wurtzite structure. The size and density of ZnO QDs were investigated by atomic force microscopy. It has been found that the density decreased while the size increased with increasing annealing temperature. The analysis of size distribution of the dots shows an obvious bimodal mode according to scaling theory. The Raman spectrum shows a typical resonant multi-phonon form for the ZnO QDs. The collapse from the top of the dots was observed firstly after the samples were exposed in air for 30 days.     

XRD study on the effect of the deposition condition on pulsed laser deposition of ZnO films

Using a pulsed laser deposition (PLD) process on a ZnO target in an oxygen atmosphere, thin films of this material have been deposited on Si(111) substrates. An Nd: YAG pulsed laser with a wavelength of 1064 nm was used as the laser source. The influences of the deposition temperature, laser energy, annealing temperature and focus lens position on the crystallinity of ZnO films were analyzed by X-ray diffraction. The results show that the ZnO thin films obtained at the deposition temperature of 400°C and the laser energy of 250 mJ have the best crystalline quality in our experimental conditions. The ZnO thin films fabricated at substrate temperature 400°C were annealed at the temperatures from 400°C to 800°C in an atmosphere of N₂. The results show that crystalline quality has been improved by annealing, the optimum temperature being 600°C. The position of the focusing lens has a strong influence on pulsed laser deposition of the ZnO thin films and the optimum position is 59.5 cm from the target surface for optics with a focal length of 70 cm.      

Annealing studies of the Co/Si(1 1 1) interface

The behaviour of the Co/Si(1 1 1) interface upon annealing is investigated by low energy electron diffraction (LEED), angle resolved ultraviolet (ARUPS) and X-ray (XPS) photoemission spectroscopy. According to the Co thickness two regimes can be distinguished. At low coverages (≲ 8 monolayers ML) no well defined bulk silicides other than the silicon rich epitaxial CoSi₂ phase can be identified. In contrast for larger Co thickness (≳ 15–100 ML) it is found that increasing progressively the annealing temperature (up to 600°C) and time (up to ∼ 30 min) leads to the successive arrival of the following silicides phases within the probing depth of our techniques (∼ 5–20 Å): Co, Co₂Si, CoSi, CoSi₂.     

New surface phases for potassium adatoms on cleaved Si(111)

In a previous study (B. Reihl and K.O. Magnusson, Phys. Rev. B 42 (1990) 11 839) no change was observed in the LEED pattern from the 2 × 1 pattern of the clean Si(111) surface upon potassium adsorption. In contrast to this paper, we observe six surface phases during room temperature dosing of K on the cleaved Si(111) surface. In addition, we observe a 3 × 1 pattern on the cleaved K/Si(111) surface upon annealing. This paper will provide photographs of the new phases observed with LEED. It also will set limits on the K coverage required for these phases using results from photoemission and secondary electron cutoff measurements. Tentative models for these surfaces will be proposed. These new LEED results show a more complex interaction between K and the cleaved Si(111) surface than previously thought and hopefully will encourage further exploration of adsorption on the cleaved Si(111) surface.     

Growth of extra-thin ordered aluminum films on Si(110) surfaces

The formation of surface structures upon Al deposition onto a Si(110) surface was studied by LEED and AES. The “4 × 6”, “1 × 9”, 2 × 1, 1 × 1 ordered Si(110)-Al surface phases and epitaxial Al(110) domains were observed depending on Al coverage and substrate temperature. The formation phase diagram was drawn for the Al/Si(110) system.     

Hybrid pulsed laser deposition and Si-surface-micromachining process for integrated TiC coatings in moving MEMS

Titanium carbide (TiC) is one of the preferred coatings for improving the performance of macroscopic moving mechanical components due to its established wear-resistance. Pulsed laser deposition (PLD) is an excellent method for depositing TiC, because unlike any other deposition process for TiC, PLD offers the capability of producing high-quality films even at room temperature. Using a modified PLD technique, especially designed for the deposition of particulate-free films, TiC coatings have been deposited at room temperature on silicon (Si) and on several types of thin films typically employed for fabricating microelectromechanical systems (MEMS). Our results demonstrate that TiC coatings also offer a high wear-resistance to Si surfaces, which in turn has led to our application of TiC to “moving” Si MEMS devices. The performance of moving Si MEMS devices is limited by their poor operational lifetimes, which have been attributed to the excessive wear at sliding Si interfaces. The work presented here describes a hybrid process, whereby PLD is used in conjunction with a user-friendly Si surface micromachining scheme for inserting wear-resistant TiC coatings between critical sliding Si interfaces in MEMS devices. This paper describes the properties of PLD-TiC for MEMS and the hybrid PLD-surface micromachining process for the integration of TiC coatings into Si MEMS. Received: 23 January 2003 / Accepted: 8 February 2003 / Published online: 28 May 2003 RID="*" ID="*"Corresponding author. Fax: +1-310/563-7614, E-mail: gouri.radhakrishnan@aero.org     

Scanning tunneling microscopy observation of ultrathin epitaxial CoSi<Subscript>2</Subscript>(111) films grown at a high temperature

Scanning tunneling microscopy (STM) is used to study the basic laws of growth of ultrathin epitaxial CoSi₂(111) films with Co coverages up to 4 ML formed upon sequential deposition of Co and Si atoms taken in a stoichiometric ratio onto the Co–Si(111) surface at room temperature and subsequent annealing at 600–700°C. When the coverage of Co atoms is lower than ~2.7 ML, flat CoSi₂ islands up to ~3 nm high with surface structure 2 × 2 or 1 × 1 grow. It is shown that continuous epitaxial CoSi₂ films containing 3–4 triple Si–Co–Si layers grow provided precise control of deposition. CoSi₂ films can contain inclusions of the local regions with (2 × 1)Si reconstruction. At a temperature above 700°C, a multilevel CoSi₂ film with pinholes grows because of vertical growth caused by the difference between the free energies of the CoSi₂(111) and Si(111) surfaces. According to theoretical calculations, structures of A or B type with a coordination number of 8 of Co atoms are most favorable for the CoSi₂(111)2 × 2 interface.     

Surface science studies of cobalt overlayers on clean and sulfur covered Mo(100) single crystal surfaces

The interaction of cobalt with clean and sulfur covered Mo(100) surfaces was investigated with Auger electron spectroscopy (AES), low energy electron diffraction (LEED) and temperature programmed desorption (TPD). On the clean surface, the deposition and subsequent annealing of one monolayer of cobalt resulted in the formation of an ordered overlayer with (1 × 1) surface structure. When cobalt was deposited on sulfur covered Mo(100) surfaces, after annealing the sulfur overlayer migrated on top of the cobalt layer. This topmost sulfur overlayer did not significantly affect the thermal desorption of cobalt from the Mo(100) surface. Various ordered structures of sulfur, cobalt and coadsorbed sulfur and cobalt were observed by LEED. A new surface structure showing (3 × 1) symmetry was observed when at least one monolayer of cobalt was deposited and annealed at 870 K on an ordered monolayer of sulfur on the Mo(100) surface. This surface structure was stable in ultrahigh vacuum up to 940 K.     

Iron oxide thin film growth on Al2O3/NiAl(1 1 0)

The electronic structure and the growth morphology of iron oxide thin films were studied by means of Synchrotron Radiation Photoelectron Spectroscopy (SRPES) and Low Energy Electron Diffraction (LEED). A thin well-ordered alumina film on a NiAl(1 1 0) single crystal surface as a template for iron oxide growth was employed. Two different methods of iron oxide film preparation were applied. In the first attempt, iron deposited at room temperature was subsequently annealed in oxygen. Even though a whole layer of iron was oxidized, an expected long-range order was not achieved. The second attempt was to perform reactive deposition. For this reason iron was evaporated in oxygen ambient at elevated substrate temperature. This method turned out to be more efficient. Diffused but clear LEED patterns of six-fold symmetry indicating hexagonal surface atoms arrangement were observed. From the PES measurements, binding energies for Fe2p for grown iron oxide film were established as well as energy distribution curves for the valence band. Growth curves based on Fe3p core-level peak intensities for iron and iron oxide were plotted identifying type of film growth for both deposition methods. Based upon these results we have found evidence for interdiffusion in the interface between alumina and iron oxide at the early stages of growth. Further deposition led to formation of Fe₃O₄(1 1 1) (magnetite) overlayer. Moreover, the quality of the film could also be improved by long-time annealing at temperatures not exceeding 575 K. Higher annealing temperature caused disappearance of LEED pattern indicating loss of long-range ordering.     

STM investigation of cobalt silicide nanostructures’ growth on Si(111)-(√19 × √19) substrate

Continuing miniaturization of electronic devices necessarily requires assembly of several different objects or devices in a small space. Therefore, besides thin films growth, the possibility of fabricating wires and dots [1, 2] at the nanometre scale composed of metal silicides is of the top interest. This report is about the STM/STS investigation of cobalt silicides’ nanostructures created on Si(111)-(√19 × √19) substrates via Co evaporation and post deposition annealing. This (√19 × √19) reconstruction was induced by Ni doping. Less than 1ML of Co on surface was obtained. Surface reconstruction induced growth of agglomerates of clusters rather than an uniform layer. The post deposition annealing of a crystal sample (up to 670 K, 770 K, 870 K, 970 K, 1070 K and 1170 K) led to creation of silicides’ nanostructures. Measurements showed that coalescence of Co nanoislands begun around 970 K. Annealing above 1070 K led to alloying of a Co, Ni and Si. As a consequence the Si(111)-(7×7) reconstruction occurred at the cost of Si(111)-(√19 × √19).