通过带有侧向耦合量子点的量子线中的光辅助隧穿

应用非平衡格林函数方法,研究了带有微波调制的侧向耦合量子点的量子线中的光辅助隧穿.在考虑了量子干涉和微波场的情况下,得出并讨论了电子传榆幅度和相位方面的信息.电子传输幅度显示出一系列的反共振峰(对应图中的谷结构).峰值的高度与振荡的微波场的幅度和频率有关,而峰的位置只与微波场的频率有关.在有限温的情况下,反共振峰值的高度随着温度的增加而减小,当温度足够高时,反共振峰会消失,特别地,在一定的温度下,低温下谷的地方会演变成峰.     

Antiresonance of electron tunneling through a quantum dot array

Electronic transport through a one-dimensional quantum dot array is theoretically studied. In such a system both electron reservoirs of continuum states couple with the individual component quantum dots of the array arbitrarily. When there are some dangling quantum dots in the array outside the dot(s) contacting the leads, the electron tunneling through the quantum dot array is wholly forbidden if the electron energy is just equal to the molecular energy levels of the dangling quantum dots, which is called as antiresonance of electron tunneling. Accordingly, when the chemical potential of the reservoir electrons is aligned with the electron levels of all quantum dots, the linear conductance at zero temperature vanishes if there are odd number dangling quantum dots; Otherwise, it is equal to 2e²/h due to resonant tunneling if the total number of quantum dots in the array is odd. This odd–even parity is independent of the interdot and the lead–dot coupling strength.     

Current bistability in resonant tunneling through a semiconductor quantum dot

We discuss resonant tunneling through quantum dot energy levels considering the charging energy of the dot. The hamiltonian of the system is reduced to a form of the Anderson hamiltonian of resonant tunneling. The mean-field approximation is applied and current–voltage characteristics are evaluated. The self-consistent solution is investigated for the low tunneling rate case in the low-temperature condition. The current bistability and the related current hysteresis are pointed out. The Coulomb staircase is shown in the current–voltage characteristics. These features are all due to Coulomb repulsion within the dot.     

Single-dot spectroscopy via elastic single-electron tunneling through a pair of coupled quantum dots

We study the electronic structure of a single self-assembled InAs quantum dot by probing elastic single-electron tunneling through a single pair of weakly coupled dots. In the region below pinch-off voltage, the nonlinear threshold voltage behavior provides electronic addition energies exactly as the linear, Coulomb blockade oscillation does. By analyzing it, we identify the s and the p shell addition spectrum for up to six electrons in the single InAs dot, i.e., one of the coupled dots. The evolution of the shell addition spectrum with magnetic field provides Fock-Darwin spectra of the s and p shells.     

Tunable nonadiabatic excitation in a single-electron quantum dot

We report the observation of nonadiabatic excitations of single electrons in a quantum dot. Using a tunable-barrier single-electron pump, we have developed a way of reading out the excitation spectrum and level population of the dot by using the pump current as a probe. When the potential well is deformed at subnanosecond time scales, electrons are excited to higher levels. In the presence of a perpendicular magnetic field, the excited states follow a Fock-Darwin spectrum. Our experiments provide a simple model system to study nonadiabatic processes of quantum particles.     

Energy-dependent tunneling in a quantum dot

We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The tunneling process is shown to be elastic, and a model describing tunneling in terms of the dot energy relative to the height of the tunnel barrier quantitatively describes the measurements.     

AC field-controlled Andreev tunneling through a serially-coupled double quantum dot system

AC field-controlled Andreev tunneling through two serially-coupled quantum dots are investigated theoretically by using the nonequilibrium Green's function method. The photon-assisted Andreev tunneling is studied in detail. It is found that the average current depends distinctly on the interdot coupling. In the weak interdot coupling case, the average current versus the gate voltage exhibit negative peaks on the left-hand side and positive peaks on the right-hand side of the Fermi level. However, in the strong interdot coupling case, the current exhibit both negative and positive peaks on each side of the Fermi level. Furthermore, the system can function as an electron pump capable of transporting electrons through the resonant photon-assisted Andreev tunneling.     

Commensurate photon-irradiated Fano-Kondo tunneling through a quantum dot embedded Aharonov-Bohm interferometer

The commensurate photon-irradiated mesoscopic transport in a strongly correlated quantum dot (QD) embedded Aharonov-Bohm (AB) interferometer has been investigated. We focus our investigation on the dynamic Kondo and Fano cooperated effect affected by the double commensurate MWFs with q=ω₂/ω₁ being an arbitrary integer, where ω₁ and ω₂ are the two frequencies of the fields. The general tunneling current formula is derived by employing the nonequilibrium Green's function technique, and the different photon absorption and emission processes induced nonlinear properties have been studied to compare with the single-field system where q=0. Our numerical calculations are performed for the special cases with two commensurate fields possessing q=1,2. The Kondo peak can be suppressed to be a Kondo valley for the case where the commensurate number q=1, and the Fano asymmetric structure exhibits in the differential conductance quite evidently. Different commensurate number q contributes different photon absorption and emission effects. However, the conductance for the case of q=2 possesses more peaks and heavier asymmetric structure than the situations of q=0,1. The enhancement of satellite peaks behaves quite differently for the two cases with q=1, and q=2. The asymmetric peak-valley structure is adjusted by the gate voltage, commensurate MWFs, AB flux, source-drain bias, and non-resonant tunneling strength to form novel Fano and Kondo resonant tunneling.     

电声子相互作用对量子点分子中单电子隧穿的影响

研究了双量子点系统中的电子隧穿动力学过程，在考虑电子与声子相互作用的情况下用基于 正则变换的微扰方法解析地得到了电子动态隧穿电流的表达式. 并且详细分析电子与声子耦 合引起的退相干问题，在此基础上指出了可能的退耦机理. 关键词： 电声子相互作用 双量子点 隧穿     

Landau-level spectroscopy of a two-dimensional electron system by tunneling through a quantum dot

A single InAs self-assembled quantum dot is incorporated in the barrier of a tunnel diode and used as a spectroscopic probe of an adjacent two-dimensional electron system from the Fermi energy to the subband edge. We obtain quantitative information about the energy dependence of the quasiparticle lifetime. For magnetic field B, applied parallel to the current, we observe peaks in the current-voltage characteristics I(V) corresponding to the formation of Landau levels. Close to filling factor nu=1 we observe directly the exchange enhancement of the Lande g factor.     

Optical detection of single-electron spin resonance in a quantum dot

We demonstrate optically detected spin resonance of a single electron confined to a self-assembled quantum dot. The dot is rendered dark by resonant optical pumping of the spin with a laser. Contrast is restored by applying a radio frequency (rf) magnetic field at the spin resonance. The scheme is sensitive even to rf fields of just a few microT. In one case, the spin resonance behaves as a driven 3-level lambda system with weak damping; in another one, the dot exhibits remarkably strong (67% signal recovery) and narrow (0.34 MHz) spin resonances with fluctuating resonant positions, evidence of unusual dynamic processes.     

Luttinger-liquid behavior in tunneling through a quantum dot at zero magnetic field

Thermodynamic and transport properties of a two-dimensional circular quantum dot are studied theoretically at zero magnetic field. In the limit of a large confining potential, where the dot spectrum exhibits a shell structure, it is argued that both spectral and transport properties should exhibit Luttinger liquid behavior. These predictions are verified by direct numerical diagonalization. The experimental implications of such Luttinger liquid characteristics are discussed.     

Spin-flip assisted tunneling through quantum dot based magnetic tunnel junctions

We theoretically study the spin-polarized transport through double barrier magnetic tunnel junction (DBMTJ) consisting of the quantum dot sandwiched by two ferromagnetic (FM) leads. The tunneling current through the DBMTJ is evaluated based on the Keldysh nonequilibrium Green’s function approach. The self-energy and Green’s function of the dot are analytically obtained via the equation of motion method, by systematically incorporating two spin-flip phenomena, namely, intra-dot spin-flip, and spin-flip coupling between the lead and the central dot region. The effects of both spin-flip processes on the spectral functions, tunneling current and tunnel magnetoresistance (TMR) are analyzed. The spin-flip effects result in spin mixing, thus contributing to the spectral function of the off-diagonal Green’s function components ( G_s[`(s)] ^r )\left( {G_{\sigma \bar \sigma }^r } \right). Interestingly, the spin-flip coupling between the lead and dot enhances both the tunneling current and the TMR for applied bias above the threshold voltage V _th . On the other hand, the intra-dot spin-flip results in an additional step in the I-V characteristics near V _th . Additionally, it suppresses the tunneling current but enhances the TMR. The opposing effects of the two types of spin-flip on the tunneling current means that one spin-flip mechanism can be engineered to counteract the other, so as to maintain the tunneling current without reducing the TMR. Their additive effect on the TMR enables the DBMTJ to attain a large tunneling current and high TMR for above threshold bias values.     

Optical probing of spin polarization of electrons in quantum dot edge channels

We propose an optical method for the investigation of the quantum dot edge channels by utilizing circularly polarized photoluminescence in the integer-quantum-Hall-effect regime. One of the advantages of our method is that the degree of the spin-polarization of the electrons in the inner- and outer-compressible liquids can be probed separately. The observed polarized photoluminescence spectra can be explained by the calculated electron spin-dependent optical transition probabilities based on the local-spin density approximation.     

Multi-functional edge driven nano-scale cellular automata based on semiconductor tunneling nano-structure with a self-assembled quantum dot layer

We present a feasibility study of the semiconductor tunneling nano-structure consisting of multiple layers of two semiconductors along with a quantum dot layer for potential application in a cellular automata logic module. The elementary logic cell of the proposed CA module consists of a couple of tunnel diodes connected in series through a quantum dot. The charge of the quantum dot is considered as a logic variable. The local interconnections of nano-cells are achieved via the in-plane tunneling in the quantum dot layer. On the basis of approximate tunneling characteristics, multiple associative states and state dynamics are simulated. There are two ultimate advantages of the proposed CA scheme: (i) potential realization of a number of logic functions in one module, and (ii) reduced number of cell contacts required for read-in and read-out procedures (only edge cells have individual contacts). Examples of image processing using different logic functions are presented.     

Magnetic-field-induced singularity in the tunneling current through an InAs quantum dot

The tunneling transport through a GaAs/(AlGa)As/GaAs single-barrier heterostructure with self-assembled InAs quantum dots is studied experimentally at low temperatures. An anomalous increase in the tunneling current through the quantum dots is observed in magnetic fields both parallel and perpendicular to the current. This result cannot be understood in the framework of the single-electron approximation. The proposed explanation of the phenomenon is based on the modified Matveev-Larkin theory, which predicts the appearance of a singularity in the tunneling current through the zero-dimensional state in a magnetic field because of the interaction between the tunneling electron and the spin-polarized three-dimensional electron gas in the emitter. The absence of spin splitting in the experimental resonance peaks is caused by the complete spin polarization of the emitter in relatively weak magnetic fields.