Effect of GePt buffer layer on magnetic properties and microstructure of FePt films

We have explored the interlayer diffusion effect of Ge/FePt, GePt/FePt bilayer on the formation of ordered L1₀ FePt phase. In Ge/FePt bilayer, the Ge₃Pt₂ compound was formed during post annealing at 400^oC for 1.0 h. Diffusion between Ge and FePt layer suppres the formation of ordered L1₀ FePt phase. With Ge₂Pt₃ underlayer, the FePt film was ordered at 400 °C and the in-plane coercivity was 9.3 kOe. The ordering temperature was reduced about 50 °C compared to the single layer FePt film.     

Magnetic properties and microstructure of x/FePt (x=Ge,GePt) bilayer

We have investigated the effect of Ge, GePt underlayers on the formation of ordered L1₀ FePt films. With Ge underlayer, the Ge₃Pt₂ compound was formed during post-annealing at 400 °C for 1 h. Interlayer diffusion of Ge and FePt layer suppress the formation of ordered L1₀ FePt phase. With Ge₂Pt₃ underlayer, the FePt film was ordered at 350 °C and the in-plane coercivity was 5.1 kOe. The ordering temperature was reduced to about 50 °C compared to the single-layer FePt film.     

Thermal stability and diffusion processes in Mo x Si y /Si multilayers studied with high-resolution RBS

Mo _x Si _y /Si multilayers with a period thickness of ∼7.5 nm and bilayers Mo _x Si _y /Si have been fabricated by e⁻-beam evaporation in UHV at a deposition temperature of 150°C [1]. The composition of the as-deposited layer systems and changes in the composition after baking the samples have been studied with high-resolution RBS. For a multilayer with a mixing ratioy/x≃2, no interdiffusion is observed up to a baking temperature of 830°C. For samples with a mixing ratioy/x≃1, diffusion is observed up to a baking temperature of 630°C, resulting in a mixing ratio close toy/x≃2. This mixing ratio remains almost stable up to ∼830°C, and considerable interdiffusion is only observed in those systems where regions with a mixing ratio smaller than 2 still exist. Possible reasons for the high thermal stability of the samples are the lack of a concentration gradient for Si in the system and/or the crystallization of MoSi₂.     

First-principles study of adsorption and diffusion on Ge/Si(0 0 1)-(2 × 8) and Ge/Si(1 0 5)-(1 × 2) surfaces

Using first-principles total-energy calculations, we have investigated the adsorption and diffusion of Si and Ge adatoms on Ge/Si(0 0 1)-(2 × 8) and Ge/Si(1 0 5)-(1 × 2) surfaces. The dimer vacancy lines on Ge/Si(0 0 1)-(2 × 8) and the alternate S_A and rebonded S_B steps on Ge/Si(1 0 5)-(1 × 2) are found to strongly influence the adatom kinetics. On Ge/Si(0 0 1)-(2 × 8) surface, the fast diffusion path is found to be along the dimer vacancy line (DVL), reversing the diffusion anisotropy on Si(0 0 1). Also, there exists a repulsion between the adatom and the DVL, which is expected to increase the adatom density and hence island nucleation rate in between the DVLs. On Ge/Si(1 0 5)-(1 × 2) surface, the overall diffusion barrier of Si(Ge) along direction is relative fast with a barrier of ∼0.83(0.61) eV, despite of the large surface undulation. This indicates that the adatoms can rapidly diffuse up and down the (1 0 5)-faceted Ge hut island. The diffusion is also almost isotropic along [0 1 0] and directions.     

Enhanced photosensitivity in sol–gel derived 20GeO2:80SiO2 thin films

We investigate the photosensitivity of binary 20GeO₂:80SiO₂ (germanosilicate) inorganic films. The samples have been fabricated by the sol–gel spin-coating method and the densification has been performed by rapid thermal annealing at various temperatures ranging from 500 °C to 1000 °C. The –OH absorption bands in the Fourier-transform infrared (FTIR) spectra and the refractive-index data show that the films annealed below 900 °C are porous and the films annealed at 900 °C and above are dense. An ultraviolet (UV) KrF laser at 248 nm has been used to induce the change in the refractive index of the samples. We have achieved a large refractive-index change (Δn) of 0.0098 after UV illumination in excess of 1 min for our dense germanosilicate films. This UV-induced refractive-index change is attributed to the formation of GeE’/SiE’ centers from Ge–Ge/Si–Si (neutral oxygen monovacancy) and Ge²⁺ centers and to the creation of oxygen deficiency related defects. From our experiments, the oxygen deficiency related defects correspond to the absorption band at 620–740 cm^-1 in the FTIR spectra and these are the defects which make a large contribution to Δn. The attenuation coefficient of the as-deposited and UV-illuminated dense samples is about 0.42 dB/cm at 1550 nm. For porous samples, UV exposure has densified the samples to some extent. PACS 82.50.Hp; 71.23.Cq; 81.20.Fw     

Polarization effect in langasite crystals

The variation of the resonance frequency of piezoelectric resonators subjected to a constant electric field is demonstrated with longitudinal vibrations in La₃Ga₅SiO₁₄ (langasite) crystal rods at temperatures between −60 and +80°C. For the rods whose longtudinal axis makes angle α with the crystal axis in the plane of the axes and [0001], the change in the frequency is proportional to the field strength and depends on α. For a field of ±1.5 × 10⁶ V/m and α = 15°, the relative change in the frequency is ±120 × 10⁻⁶. It is shown that La₃Ga₅SiO₁₄ crystals offer a set of physical parameters that makes them promising for electrically controlled acoustoelectronic devices and for devices based on nonlinear interaction between acoustic waves.     

High resolution gamma-ray spectroscopy of the27Al(p,γ)28Si resonance reaction

High resolution gamma-ray spectra have been measured from the²⁷Al (p,γ)²⁸Si reaction for the resonances atE _p=2·482, 2·511 and 2·735 MeV at ϑ _pγ=0°, 30°, 55° and 90° using a Ge (Li) gamma spectrometer. From the spectra and the angular distributions the properties of the resonance states have been obtained. These states are the isobaric analogues of the levels at 4·69, 4·75 and 4·93MeV levels respectively in the parent nucleus A²⁸l.     

AES and factor analysis study of silicide growth at the Pd/c-Si interface

We have measured the evolution of a palladium/silicon interface under consecutive annealing periods, performed at 200°C in UHV conditions. The interface was analyzed by means of Auger electron spectroscopy combined with factor analysis applied in a sequential way. We found that silicide appears only after annealing and evolves until all the palladium is consumed. A silicon compound different from silicide, identified as Pd_xSi with x<2 is found at the interface Pd/Si and Pd₂Si/Si, before and after annealing respectively.     

The rotational spectrum, nuclear field shift effects, Pt nuclear spin-rotation constant, and electric dipole moment of PtSi

The pure rotational spectrum of the ground electronic state of platinum monosilicide has been measured for nine isotopomers. For the most abundant isotopomer, ¹⁹⁴Pt²⁸Si, the J=1-0 and the J=2-1 transitions were recorded up to the fourth vibrationally excited state. The data set obtained enabled a multi-isotopomer fit to a Dunham-type expression and the constants Y₀₁, Y₀₂, Y₁₁, Y₂₁, and Y₃₁ were determined. In the process of fitting the data it was necessary to include Born-Oppenheimer breakdown correction terms and the values and significance of these terms are discussed. Strong evidence is presented indicating within the rotational spectrum the presence of field shift effects due to the finite size of the Pt nucleus. The nuclear spin-rotation constant, C_I(¹⁹⁵Pt) is found to be 30.98(157) kHz in the ground vibrational state. Hyperfine structure arising from the ²⁹Si nucleus was not observed. The measurement of Stark shifts in the rotational spectrum of PtSi has enabled the determination of the dipole moments for the ¹⁹⁴Pt²⁸Si and ¹⁹⁶Pt²⁸Si isotopomers.     

Hydrogen diffusion constants in stainless steel and Pd60Ag40 alloy, and permeability of diaphragms made of these metals

Hydrogen permeability through diaphragms made of 12X18H12T stainless steel and Pd₆₀Ag₄₀ alloy under electrolytic hydrogen saturation has been studied with an electrolytic cell with a vacuum chamber. Hydrogen diffusion constants D _H = 3.86 × 10⁻¹⁰ cm² s⁻¹ for stainless steel and D _H = 4.36 × 10⁻⁸ cm² s⁻¹ for Pd₆₀Ag₄₀ alloy have been determined at a temperature of 40°C using the Berrer relations.     

Aluminum-assisted crystallization and <Emphasis Type="Italic">p</Emphasis>-type doping of polycrystalline Si

Aluminum-doped p-type polycrystalline silicon thin films have been synthesized on glass substrates using an aluminum target in a reactive SiH₄+Ar+H₂ gas mixture at a low substrate temperature of 300 °C through inductively coupled plasma-assisted RF magnetron sputtering. In this process, it is possible to simultaneously co-deposit Si–Al in one layer for crystallization of amorphous silicon, in contrast to the conventional techniques where alternating metal and amorphous Si layers are deposited. The effect of aluminum target power on the structural and electrical properties of polycrystalline Si films is analyzed by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and Hall-effect analysis. It is shown that at an aluminum target power of 100 W, the polycrystalline Si film features a high crystalline fraction of 91%, a vertically aligned columnar structure, a sheet resistance of 20.2 kΩ/□ and a hole concentration of 6.3×10¹⁸ cm⁻³. The underlying mechanism for achieving the semiconductor-quality polycrystalline silicon thin films at a low substrate temperature of 300 °C is proposed.     

Photoluminescence,thermoluminescence and electron spin resonance studies on Eu<Superscript>3+</Superscript> doped Ca<Subscript>3</Subscript>Al<Subscript>2</Subscript>O<Subscript>6</Subscript> red phosphors

Tricalcium aluminate doped with Eu³⁺ was prepared at furnace temperatures as low as 500°C by using the convenient combustion route and examined using powder X-ray diffraction, scanning electron microscope and photoluminescence techniques. A room-temperature photoluminescence study showed that the phosphors can be efficiently excited by UV/Visible region, emitting a red light with a peak wavelength of 616 nm corresponding to the ⁵D₀–⁷F₂ transition of Eu³⁺ ions. The phosphor exhibits three thermoluminescence (TL) peaks at 195°C, 325°C and 390°C. Electron Spin Resonance (ESR) studies were carried out to study the defect centres induced in the phosphor by gamma irradiation and also to identify the defect centres responsible for the TL process. Room-temperature ESR spectrum of irradiated phosphor appears to be a superposition of three distinct centres. One of the centres (centre I) with principal g-value 2.0130 is identified as O⁻ ion while centre II with an axially symmetric principal values g _∥=2.0030 and g _⊥=2.0072 is assigned to an F⁺ centre (singly ionized oxygen vacancy). O⁻ ion (hole centre) correlates with the TL peak at 195°C and the F⁺ centre (electron centre), which acts as a recombination centre, is also correlated to the 195°C TL peak. F⁺ centre further appears to be related to the high temperature peak at 390°C. Centre III is also assigned to an F⁺ centre and seems to be the recombination centre for the TL peak at 325°C.     

Crystal chemistry of layered carbide, Ti3(Si0.43Ge0.57)C2

 The crystal structure of a layered ternary carbide, Ti₃(Si_0.43Ge_0.57)C₂, was studied with single-crystal X-ray diffraction. The compound has a hexagonal symmetry with space group P6₃/mmc and unit-cell parameters a=3.0823(1) Å, c=17.7702(6) Å, and V=146.21(1) Å³. The Si and Ge atoms in the structure occupy the same crystallographic site surrounded by six Ti atoms at an average distance of 2.7219 Å, and the C atoms are octahedrally coordinated by two types of symmetrically distinct Ti atoms, with an average C-Ti distance of 2.1429 Å. The atomic displacement parameters for C and Ti are relatively isotropic, whereas those for A (=0.43Si+0.57Ge) are appreciably anisotropic, with U₁₁ (=U₂₂) being about three times greater than U₃₃. Compared to Ti₃SiC₂, the substitution of Ge for Si results in an increase in both A-Ti and C-Ti bond distances. An electron density analysis based on the refined structure shows that each A atom is bonded to 6Ti atoms as well as to its 6 nearest neighbor A site atoms, whether the site is occupied by Si or Ge, suggesting that these bond paths may be significantly involved with electron transport properties.     

Pt coated Cr2O3 thin films for resistive gas sensors

The resistive response of atomic layer deposited thin epitaxial α-Cr₂O₃(0 0 1) films, to H₂ and CO in air, was studied. The films were covered with Pt nanoislands formed by electron-beam evaporation of a sub-monolayer amount of the material. The gas measurements were performed at 250°C and 450°C. These temperatures led to different proportion of chemical states, Pt²⁺ and Pt⁴⁺, to which the Pt oxidized. The modification was ascertained by the X-ray photoelectron spectroscopy method. As a result of the modification, the response was fast at 250°C, but slowed at 450°C. A disadvantageous abundance of Pt⁴⁺ arising at 450°C in air could be diminished by high-vacuum annealing thus restoring the response properties of the system at 250°C.      

Analyzing powers in the 12C( \vec d ,p)13C reaction at the energy T d = 270 MeV

The preliminary results on the tensor T₂₀ analyzing power for the ¹²C(,p)¹³C* reaction with the excitation of ¹³C levels and the d(,p)X reaction at the energies T _d = 140, 200 and 270 MeV at the emission angle Θ _cm = 0° are presented. The data on the tensor A _yy and vector A _y analyzing powers for the ¹²C(,p)¹³C* reaction at the energy T _d = 270 MeV in the angular range from 4° to 18° in the laboratory are also obtained.     

Ion beam modification of silicide-silicon interfaces

We have modified the contact interface between Pd₂Si and n-Si by ion implantation and investigated the effect of the implantation on Schottky barrier height and rate of silicide formation by electrical current-voltage measurements and Rutherford backscattering spectroscopy. Various ions, As. P, B. O and Si at 50 keV and up to a dose of 5 × 10¹⁴ ions/cm² were implanted into Si wafers before the Pd-deposition to form Pd₂Si. In the case of As and P, the implantation showed a large erect on the subsequent Pd₂Si formation; the formation is enhanced in the as-implanted samples, but it is retarded if an annealing at 600°C precedes the Pd-deposition. Silicide formation was found generally to help reduce the implantation damage (with or without the 600°C annealing) and showed improvements on the electrical characteristics of the contact interface. Consumption of the entire implanted region by silicide formation is found necessary for obtaining a good diode performance. In the case of As implantation, a lowering of the Schottky barrier height of Pd₂Si has been observed.     

Current transport along the [001] axis of YBCO in low-temperature superconductor-normal metal-high-temperature superconductor heterostructures

The electrophysical properties of heterojunctions several microns in size, obtained by successive deposition of the metal-oxide high-temperature superconductor YBa₂Cu₃O_x, a normal metal Au, and the low-temperature superconductor Nb, were studied experimentally. Current flows in the [001] direction of the epitaxial YBa₂Cu₃O_x film. It is shown, by comparing the experimental data with existing theoretical calculations, that for the experimentally realizable transmittances (D̄=10⁻⁵–10⁻⁶) of the YBa₂Cu₃O_x—normal metal boundary the critical current of the entire heterostructure is low (of the order of the fluctuation current) because of a sharp change in the amplitude of the potential of the superconducting carriers at this boundary. The current-voltage characteristics of the heterostructure studied correspond to tunnel junctions consisting of a superconductor with type symmetry of the superconducting wave function and a normal metal. Zh. éksp. Teor. Fiz. 116, 2140–2149 (December 1999)     

Formation of high-conductivity NiSi2 layers on Si at zero-mismatch temperature by high-current Ni-ion implantation

2 and Si lattices at 380 °C, which was defined as zero-mismatch temperature. The implantation was conducted with a metal vapor vacuum arc (MEVVA) ion implanter at an extraction voltage of 45 kV. Based on a thermal conduction estimation, a temperature rise of 380 °C required the Ni-ion current density to be 35 μA/cm². For the Si(111) wafers, the high conducting NiSi₂ layers were indeed directly formed after Ni-ion implantation with this specific current density to a normal dose of 2×10¹⁷ ions/cm² and the resistivity was as low as 9 μΩ cm. For the Si(111) wafers pre-covered with a 10-nm Ni overlayer, the resistivity of the NiSi₂ layers obtained under the same conditions decreased down to about 6 μΩ cm. The superior electrical property of the NiSi₂ was thought to be related to its formation temperature, i.e. at a zero-mismatch temperature of 380 °C, which resulted in minimizing the stress and stress-induced defects involved in its formation as well as cooling process. Received: 27 April 1998 / Accepted: 26 October 1998     

Mechanism and kinetics of the diffusion of gold in silicon

The diffusion of Au in Si is known to take place via the interchange of Au atoms between substitutional (Au _s ) and interstitial (Au _i ) sites. So far it has generally been believed that this interchange involves lattice vacancies (V) and that it occurs via the Frank-Turnbull mechanism V+Au _i ⇆Au _s . It is stated in the literature that this model explains the observation that the Au _s concentrationC _s ^m in the centre of Au-diffused Si wafers increases with timet according to . We show that this statement is incorrect, i.e., the Frank-Turnbull model cannot account for the law. Such a dependence is expected in the case of Si wafers with a sufficiently low density of internal sinks for self-interstitials if the Au _i −Au _s interchange is controlled by the so-called kick-out mechanism Au _i ⇆Au _s +1. Since this mechanism involves self-interstitials (I) the present result is in accordance with the fact that under high-temperature equilibrium conditions the dominating intrinsic point defects in Si are self-interstitials and not vacancies as in Ge or metals.     

Genesis of supported carbon-coated Co nanoparticles with controlled magnetic properties,prepared by decomposition of chelate complexes

Following procedures formerly developed for the preparation of supported heterogeneous catalysts, carbon-coated cobalt nanoparticles dispersed on porous alumina have been prepared by impregnation of γ-Al₂O₃ with (NH₄)₂[Co(EDTA)] and thermal decomposition in inert atmosphere. Below 350 °C, Co(II) ions are complexed in a hexa-coordinated way by the EDTA ligand. The thermal treatment at 400–900 °C leads to the EDTA ligand decomposition and recovering of the support porosity, initially clogged by the impregnated salt. According to X-ray absorption spectroscopy, and due to in situ redox reactions between the organic ligand and Co(II), both oxidic and metallic cobalt phases are formed. Characterisation by transmission electron microscopy, X-ray diffraction and magnetic measurements reveals that an increase in the treatment temperature leads to an increase of the degree of cobalt reduction as well as to a growth of the cobalt metal particles. As a consequence, the samples prepared at 400–700 °C exhibit superparamagnetism and a saturation magnetisation of 1.7–6.5 emu g⁻¹ at room temperature, whilst the sample prepared at 900 °C has a weak coercivity (0.1 kOe) and a saturation magnetisation of 12 emu g⁻¹. Metal particles are homogeneously dispersed on the support and appear to be protected by carbon; its elimination by a heating in H₂ at 400 °C is demonstrated to cause sintering of the metal particles. The route investigated here can be of interest for obtaining porous magnetic adsorbents or carriers with high magnetic moments and low coercivities, in which the magnetic nanoparticles are protected from chemical aggression and sintering by their coating.