用正电子湮没技术研究USY沸石的“二次孔”结构

测量了NaY及USY沸石的正电子寿命谱．得到NaY沸石有四个寿命分量：两个短寿命分量和两个长寿命分量．两个长寿命分量中，τ₃，τ₄分别是o-Ps在β笼和超笼中的湮没．USY沸石有五个寿命分量：两个短寿命分量和三个长寿命分量，三个长寿命分量中，τ₃为o-Ps在笼中的湮没，τ₄，τ₅分别为o-Ps在“二次微孔”和“二次中孔”中的湮没．与NaY沸石相比，在真空中，USY的τ₄增加到 关键词：     

不同气氛下多孔硅中电子偶素湮没行为研究

使用正电子湮没谱学方法,在不同气氛下对电化学腐蚀法制备的多孔硅中电子偶素的湮没行为进行了系统的研究.正电子湮没寿命谱测试结果表明,样品中存在长达40 ns的电子偶素湮没成分,并且进入多孔硅膜层的正电子约有80%形成电子偶素,具有非常高的电子偶素产额;在氧气气氛下,由于气体导致o-Ps发生自旋转化猝灭是使多孔硅样品中电子偶素寿命缩短的主要原因.结合正电子寿命-动量关联谱测量结果,分析了不同气氛下多孔硅样品中电子偶素湮没寿命及动量变化关系,讨论了多孔硅中电子偶素的湮没机理以及气氛对孔径计算理论模型的影响. 关键词： 电子偶素 正电子湮没谱学方法 多孔硅     

Hg1-xCdxTe晶体缺陷的正电子湮没寿命

利用正电子(e⁺)湮没寿命谱实验研究了Hg_1-xCd_xTe晶体样品的空位缺陷.碲溶剂法生长的样品，不论是n型导电还是p型导电都存在大量的Hg空位.经过合适的退火工艺，p型材料转为n型，同时对正电子的俘获效应减小，表现为正电子湮没平均寿命值减小14—17ps.若退火温度高于350℃，正电子湮没寿命值又增大，表明Hg空位浓度增加.得到HgCdTe中正电子的体寿命为τ_b=272ps.根据正电子湮没寿命和电参数的测量结果，得出 关键词：     

退火处理Fe43Co43Hf7B6Cu1非晶合金的正电子湮没研究

对熔体急冷法制备的Fe₄₃Co₄₃Hf₇B₆Cu₁非晶合金进行了200,300,400和500 ℃保温30 min的退火处理,用正电子湮没寿命谱、X射线衍射、穆斯堡尔谱等方法研究了退火后试样的结构及结构缺陷变化.结果表明,在非晶合金的制备态,正电子主要在非晶基体相空位尺寸的自由体积中湮没,湮没寿命τ₁为158.4 ps,强度I₁关键词： 43Co₄₃Hf₇B₆Cu₁非晶')" href="#">Fe₄₃Co₄₃Hf₇B₆Cu₁非晶 退火处理 正电子湮没寿命 结构与结构缺陷     

MoO3在多孔γ-Al2 O3中固熔分散的研究

用MoO₃与多孔γ-Al₂O₃载体以机械混合法制备了一系列MoO₃/γ-Al₂O₃样品.用扫描电子显微镜、X射线衍射、X射线光电子能谱分析、综合热分析(TG/DTA)和正电子湮没谱学研究了MoO₃加载于γ-Al₂O₃后固熔分散过程.分别测量了不同含量的MoO₃/γ-Al_{2关键词： 正电子湮没谱学 三氧化钼 分散 逐次加载}     

液晶相变的微结构研究

用正电子湮没和差示扫描量热(DSC)变温测量液晶(EBBA)样品的正电子湮没寿命谱及DSC曲线,结果表明正电子湮没的短寿命(τ_s)基本不变,而长寿命(τ₁)和强度(I₁)明显地有两次跳变,其跳变的温度范围与DSC所测定的相转变温度范围基本一致,在加热和冷却过程中样品在晶体相←→向列相之间的相互转变的相转变温度范围显著不同。用正电子湮没的ORE模型讨论了由于液晶相转变所引起的微结构变化,从而提出正电子是研究液晶(EBBA)相变的探针。 关键词：     

掺杂的PbTiO_3铁电陶瓷中的正电子湮没

正电子湮没技林(PAT)在材料缺陷的研究中有着广泛的应用[1].但它用于铁电陶瓷组分缺陷的研究则刚刚开始.Tsuda[2,3]等研究了掺Gd的BaTiO3的正电子寿命谱,证明正电子对掺Gd所造成的Ba空位是敏感的.本文报道La,Mn复合置换的PbTiO3铁电陶瓷的正电子寿命谱测量结果.样品配料分子式为(Ph-(1-1.5x)其中表示Pb空位,x值从1%到10%.样品按陶瓷工艺制成20 ×20×1mm3薄方片.在室温(23℃)下进行正电子寿命测量,实验所用的ORTEC系列快定时系统正电子寿命谱仪在测量 CO～(60)的瞬发曲线时的半高宽(FWHM)为280ps. 用正电子拟合(POSITRONFIT…     

利用正电子湮没技术研究钾掺杂钨合金中的缺陷

钨合金中钾的掺杂会引入大量的缺陷,如尺寸几十纳米的钾泡、高密度的位错以及微米量级的晶粒带来的晶界等,这些缺陷的浓度和分布直接影响合金的服役性能.本文运用正电子湮没谱学方法研究钾掺杂钨合金中的缺陷信息,首先模拟计算了合金中各种缺陷的正电子湮没寿命,发现钾的嵌入对空位团、位错、晶界等缺陷的寿命影响很小;然后测量了不同钾含量掺杂钨合金样品的正电子湮没寿命谱,建立三态捕获模型,发现样品中有高的位错密度和低的空位团簇浓度,验证了钾对位错的钉扎作用,阐述了在钾泡形成初期是钾元素与空位团簇结合并逐渐长大的过程;最后使用慢正电子多普勒展宽谱技术表征了样品中缺陷随深度的均匀分布和大量存在,通过扩散长度的比较肯定了钾泡、晶界等缺陷的存在.     

MoO3/Al2O3催化剂中Mo分散的正电子研究

用浸渍法制备了一系列不同Mo含量的MoO₃/Al₂O₃催化剂.测量了这些样品的正电子湮没寿命谱(PALS)与符合多普勒展宽(CDB)谱,以研究其孔洞结构以及Mo分散.正电子寿命测量结果表明,Al₂O₃载体中存在两种不同尺寸的孔洞.掺入MoO₃之后,Mo原子主要进入Al₂O₃的大孔中,使孔洞体积减小.符合多普勒展宽谱结果表明,当MoO 关键词： 3/Al₂O₃催化剂')" href="#">MoO₃/Al₂O₃催化剂 正电子湮没寿命谱 符合多普勒展宽 Mo 分散     

掺镧PbWO4闪烁晶体的缺陷研究

利用正电子湮没寿命谱(PAT)和X射线电子能谱(XPS)研究了掺镧所引起的PbWO₄ 晶体缺陷的变化.结果表明：掺镧后,PbWO₄晶体中的正电子捕获中心铅空位(V< sub>Pb)浓度增加,并进一步诱导低价氧浓度的增加.讨论了掺La的作用机制,认为掺 La将抑制晶体中的氧空位,增加铅空位浓度. 关键词： 掺镧钨酸铅晶体 正电子湮没寿命谱 X射线电子能谱 缺陷     

AA 2037新型连铸铝合金热轧板退火的正电子湮没研究

应用正电子湮没等技术对AA 2037连铸铝合金热轧板不同温度退火下空位-溶质相互作用及沉淀相进行了研究， 研究表明：室温时效形成的主要是空位-铜复合体以及空位-镁-铜复合体；温度为200℃退火时由于过渡相的形成正电子平均寿命出现峰值，符合多普勒展宽谱的商谱中观察到锰信号的存在，表明形成了空位-镁-锰复合体或过渡相中可能存在锰；温度高于250℃时，随着过渡相变粗、溶解，锰信号消失，而铜信号增强，在350℃后铜信号达到饱和，温度为450℃左右时，稳定相形成. 关键词： 正电子湮没技术 空位-溶质复合体 沉淀 退火     

Evolution of pores in mesoporous silica films: Porogen loading effect

Mesoporous silica films were synthesized via a sol-gel process under an acidic condition. Various amounts of triblock copolymer F38 were loaded to precursor sols as the pore generator. The evolution of the pores generated by porogen decomposition was investigated as a function of F38 loading by positron annihilation gamma-ray energy spectroscopy and positron annihilation lifetime spectroscopy based on slow positron beams. The threshold of pore percolation is found to be around 10 wt% of F38 loading by positron annihilation gamma-ray energy spectroscopy. Positron annihilation lifetime spectroscopy in the films show that the pore size increases from 1 nm to 3 nm with increasing F38 loading from 5 wt% to 30 wt%.     

Investigation of nanocrystalline CoFe 2 O 4 by positron annihilation lifetime spectroscopy

Nanoparticles of cobalt ferrite prepared by the co-precipitation method with crystallite size varying from 4.7 to 41 nm have been characterized by positron annihilation lifetime spectroscopy. Three lifetime components are fitted to the lifetime data. The shortest lifetime component is attributed to the delocalized positron lifetime shortened by defect trapping. The intermediate lifetime is assigned to the positron annihilation in diffuse vacancy clusters or microvoids at the grain boundaries and at the grain-boundary triple points. The longest component corresponds to the pick-off annihilation of ortho-positronium formed at the larger voids. The variations in these lifetimes and their relative intensities with annealing temperature and crystallite size have been studied in detail.     

Applications of slow positrons to cancer research: Search for selectivity of positron annihilation to skin cancer

Slow positrons and positron annihilation spectroscopy (PAS) have been applied to medical research in searching for positron annihilation selectivity to cancer cells. We report the results of positron lifetime and Doppler broadening energy spectroscopies in human skin samples with and without cancer as a function of positron incident energy (up to 8 μm depth) and found that the positronium annihilates at a significantly lower rate and forms at a lower probability in the samples having either basal cell carcinoma (BCC) or squamous cell carcinoma (SCC) than in the normal skin. The significant selectivity of positron annihilation to skin cancer may open a new research area of developing positron annihilation spectroscopy as a novel medical tool to detect cancer formation externally and non-invasively at the early stages.     

水蒸气退火多孔硅发光性能的正电子谱学研究

使用正电子湮没寿命谱和正电子寿命-动量关联谱对水蒸气和真空条件下退火的多孔硅样品的微观缺陷结构进行表征,结合发射光谱测量结果,对影响多孔硅发光性能的因素进行了讨论.实验结果表明,水蒸气退火后样品孔壁表面的悬挂键减少,并出现新的E′γ和EX类缺陷.水蒸气退火后样品中两种缺陷数量发生变化是导致多孔硅样品发光增强的直接原因;真空退火未使样品中发光相关缺陷发生变化,样品的发光性能没有显著改变.     

Photoluminescence and positron annihilation spectroscopic investigation on a H(+) irradiated ZnO single crystal

Low temperature photoluminescence and room temperature positron annihilation spectroscopy have been employed to investigate the defects incorporated by 6?MeV H(+) ions in a hydrothermally grown ZnO single crystal. Prior to irradiation, the emission from donor bound excitons is at 3.378?eV (10?K). The irradiation creates an intense and narrow emission at 3.368?eV (10?K). The intensity of this peak is nearly four times that of the dominant near band edge peak of the pristine crystal. The characteristic features of the 3.368?eV emission indicate its origin as a 'hydrogen at oxygen vacancy' type defect. The positron annihilation lifetime measurement reveals a single component lifetime spectrum for both the unirradiated (164?±?1?ps) and irradiated crystal (175?±?1?ps). It reflects the fact that the positron lifetime and intensity of the new irradiation driven defect species are a little higher compared to those in the unirradiated crystal. However, the estimated defect concentration, even considering the high dynamic defect annihilation rate in ZnO, comes out to be ～4?×?10(17)?cm(-3) (using SRIM software). This is a very high defect concentration compared to the defect sensitivity of positron annihilation spectroscopy. A probable reason is the partial filling of the incorporated vacancies (positron traps), which in ZnO are zinc vacancies. The positron lifetime of ～175?ps (in irradiated ZnO) is consistent with recent theoretical calculations for partially hydrogen-filled zinc vacancies in ZnO. Passivation of oxygen vacancies by hydrogen is also reflected in the photoluminescence results. A possible reason for such vacancy filling (at both Zn and O sites) due to irradiation has also been discussed.     

用正电子湮没研究纳米碲化铋的缺陷及其对热导率的影响

利用水热法合成了Bi₂Te₃纳米粉末, 并在300–500 ℃的温度范围内对其进行等离子烧结. X射线衍射测试表明制得的Bi₂Te₃粉末是单相的. 对于300–500 ℃范围内烧结的样品, 扫描电子显微镜观察发现随着烧结温度的升高样品颗粒明显增大, 但是根据X射线衍射峰的宽度计算得到的样品晶粒大小并没有明显的变化. 正电子湮没寿命测试结果表明, 所有的样品中均存在空位型缺陷, 而这些缺陷很可能存在于晶界处. 正电子平均寿命随着烧结温度的升高而单调下降, 说明较高的烧结温度导致了空位型缺陷浓度的降低. 另外, 随着烧结温度从300 ℃升高到500 ℃, 样品的热导率从0.3 W·m^-1·K^-1升高到了2.4 W·m^-1·K^-1, 这表明在纳米Bi₂Te₃中, 空位型缺陷和热导率之间存在着密切的联系.     

Polymeric membrane studied using slow positron beam

A radioisotope slow positron beam has been built at the Chung Yuan Christian University in Taiwan for the research and development in membrane science and technology. Doppler broadening energy spectra and positron annihilation lifetime have been measured as a function of positron energy up to 30 keV in a polyamide membrane prepared by the interfacial polymerization between triethylenetetraamine (TETA) and trimesoyl chloride (TMC) on modified porous polyacrylonitrile (PAN) asymmetric membrane. The multilayer structures and free-volume depth profile for this asymmetric membrane system are obtained. Positron annihilation spectroscopy coupled with a slow beam could provide new information about size selectivity of transporting molecules and guidance for molecular designs in polymeric membranes.