共查询到20条相似文献,搜索用时 31 毫秒
1.
Deep-ultraviolet surface plasmon resonance of Al and Al_(core)/Al_2O_(3shell) nanosphere dimers for surface-enhanced spectroscopy
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The localized surface plasmon resonance properties of Al and Alcore/Al2O3 shell nanosphere dimers with Al and Al core nanosphere radii of 20 nm and Al2O3 shell of 2 nm in the deep-ultraviolet region have been studied using the finite difference time domain method. The extinction spectra and the electric field distribution profiles of the two dimers for various gap distances between two individual nanospheres are compared with those of the corresponding monomers to reveal the extent of plasmon coupling. It is found that with the interparticle distance decreasing, a strong plasmon coupling between two Al or Alcore/Al2O3 shell nanospheres is observed accompanied by a significant red shift in the extinction spectra at the parallel polarization direction of the incident light related to the dimer axis, while for the case of the perpendicular polarization direction, a weak plasmon coupling arises characterized by a slight blue shift in the extinction spectra. The electric field distribution profiles show that benefiting from the dielectric Al2O3 shell, the gap distance of Alcore/Al2O3 shell nanosphere dimers can be tailored to < 1 nm scale and results in a very high electric field enhancement. The estimated surface-enhanced Raman scattering enhancement factors suggests that the Alcore/Al2O3 shell nanosphere dimers with the gap of < 1 nm gave rise to an enhancement as high as 8.1 × 107 for interparticle gap = 0.5 nm. Our studies reveal that the Alcore/Al2O3 shell nanosphere dimers may be promising substrates for surface-enhanced spectroscopy in the deep-ultraviolet region. 相似文献
2.
Performance of La203/InA1N/GaN metal-oxide-semiconductor high electron mobility transistors
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We report on the performance of La203/InA1N/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) and InA1N/GaN high electron mobility transistors (HEMTs). The MOSHEMT presents a maximum drain current of 961 mA/mm at Vgs = 4 V and a maximum transconductance of 130 mS/mm compared with 710 mA/mm at Vgs = 1 V and 131 mS/mm for the HEMT device, while the gate leakage current in the reverse direction could be reduced by four orders of magnitude. Compared with the HEMT device of a similar geometry, MOSHEMT presents a large gate voltage swing and negligible current collapse. 相似文献
3.
A 162.5 MHz, 2.1 MeV radio frequency quadruples (RFQ) structure is being designed for the Injector Scheme Ⅱ of the China Accelerator Driven Sub-critical System (C-ADS) linac. The RFQ will operate in continuous wave (CW) mode as required. For the CW normal conducting machine, the heat management will be one of the most important issues, since the temperature fluctuation may cause cavity deformation and lead to the resonant frequency shift. Therefore a detailed multi-physics analysis is necessary to ensure that the cavity can stably work at the required power level. The multi-physics analysis process includes RF electromagnetic analysis, thermal analysis, mechanical analysis, and this process will be iterated for several cycles until a satisfactory solution can be found. As one of the widely accepted measures, the cooling water system is used for frequency fine tunning, so the tunning capability of the cooling water system is also studied under different conditions. The results indicate that with the cooling water system, both the temperature rise and the frequency shift can be controlled at an acceptable level. 相似文献
4.
The localized electrochemical dissolution behavior at surface irregularities, including scratch, mechanically induced hole and corrosion pit, on pipeline steel was investigated in both near-neutral pH and high pH solutions by scanning vibrating micro-electrode and localized electrochemical impedance spectroscopy measurements. In near-neutral pH solution, the localized dissolution behavior at surface irregularities is dependent of their geometrical depth, which is critical to development of a local electrochemical condition to support the further localized dissolution. Therefore, surface irregularities exceeding a certain depth provide potential sites to initiate stress corrosion cracks in near-neutral pH solution. The strong passivating capability of high pH solution would result in the formation of oxide film over the whole electrode surface to “equalize” the electrochemical activity at irregularities to the intact area. Therefore, the irregularities would not result in localized dissolution electrochemistry. Consequently, localized corrosion and crack initiation are not anticipated to initiate from the geometrical irregularities in high pH solution. However, corrosion pits generating due to passive film breakdown could support the high local dissolution kinetics in high pH solution, providing potential sites for crack initiation. The effects of hydrogen-charging on anodic dissolution at regularities depend on the defect geometry and the solution pH. 相似文献
5.
Impact of symmetrized and Burt—Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots
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<正>We present a systematic investigation of calculating quantum dots(QDs) energy levels using the finite element method in the frame of the eight-band k·p method.Numerical results including piezoelectricity,electron and hole levels,as well as wave functions are achieved.In the calculation of energy levels,we do observe spurious solutions(SSs) no matter Burt-Foreman or symmetrized Hamiltonians are used.Different theories are used to analyse the SSs,we find that the ellipticity theory can give a better explanation for the origin of SSs and symmetrized Hamiltonian is easier to lead to SSs.The energy levels simulated with the two Hamiltonians are compared to each other after eliminating SSs,different Hamiltonians cause a larger difference on electron energy levels than that on hole energy levels and this difference decreases with the increase of QD size. 相似文献
6.
Icosahedral quasicrystals are the most important and thermodynamically stable in all about 200 kinds of quasicrystals currently observed. Beyond the scope of classical elasticity, apart from a phonon displacement field, there is a phason displacement field in the elasticity of the quasicrystal, which induces an important effect on the mechanical properties of the material and makes an analytical solution difficult to obtain. In this paper, a finite element algorithm for the static elasticity of icosahedral quasicrystals is developed by transforming the elastic boundary value problem of the icosahedral quasicrystals into an equivalent variational problem. Analytical and numerical solutions for an icosahedral A1-Pd-Mn quasicrystal cuboid subjected to a uniaxial tension with different phonon-phason coupling parameters are given to verify the validity of the numerical approach. A comparison between the analytical and numerical solutions of the specimen demonstrates the accuracy and efficiency of the present algorithm. Finally, in order to reveal the fracture behavior of the icosahedral A1-Pd-Mn quasicrystal, a cracked specimen with a finite size of matter is investigated, both with and without phonon-phason coupling. Meanwhile, the geometry factors are calculated, including the stress intensity factor and the crack opening displacement for the finite-size specimen. Computational results reveal the importance of pbonon-phason coupling effect on the icosahedral A1-Pd-Mn quasicrystal. Furthermore, the finite element procedure can be used to solve more complicated boundary value problems. 相似文献
7.
Mechanical properties an undercut evaluated resonance test and of silicon nanobeams with by combining the dynamic finite element analysis
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Mechanical properties of silicon nanobeams are of prime importance in nanoelectromechanical system applications. A numerical experimental method of determining resonant frequencies and Young's modulus of nanobeams by combining finite element analysis and frequency response tests based on an electrostatic excitation and visual detection by using a laser Doppler vibrometer is presented in this paper. Silicon nanobeam test structures are fabricated from silicon-oninsulator wafers by using a standard lithography and anisotropic wet etching release process, which inevitably generates the undercut of the nanobeam clamping. In conjunction with three-dimensional finite element numerical simulations incorporating the geometric undercut, dynamic resonance tests reveal that the undercut significantly reduces resonant frequencies of nanobeams due to the fact that it effectively increases the nanobeam length by a correct value △L, which is a key parameter that is correlated with deviations in the resonant frequencies predicted from the ideal Euler-Bernoulli beam theory and experimentally measured data. By using a least-square fit expression including △L, we finally extract Young's modulus from the measured resonance frequency versus effective length dependency and find that Young's modulus of a silicon nanobeam with 200-nm thickness is close to that of bulk silicon. This result supports that the finite size effect due to the surface effect does not play a role in the mechanical elastic behaviour of silicon nanobeams with thickness larger than 200 nm. 相似文献
8.
9.
ZHAO Xing-Wen CHENG Xin-Lu 《理论物理通讯》2008,50(10):987-989
Path integral Monte Carlo (PIMC) simulations are a powerful computational method to study interacting quantum systems at finite temperatures. In this work, PIMC has been applied to study the finite size effect of the simulated systems of ^4He. We determine the energy as a function of temperature at saturated-vapor-pressure (SVP) conditions in the temperature range of T ∈ [1.0 K,4.0 K], and the equation of state (EOS) in the grmmd state For systems consisted of 32, 64 and 128 ^4He atoms, respectively, We find that the energy at SVP is influenced significantly by the size of the simulated system in the temperature range of T ∈ [2.1 K, 3.0 K] and the larger the system is, the better results are obtained in comparison with the experimental values; while the EOS appeared to be unrelated to it. 相似文献
10.
WANG Dian-Pu 《理论物理通讯》2008,50(12):1387-1390
In terms of the Nambu-Jona-Lasinio mechanism, dynamical breaking of gauge symmetry for the maximally generalized Vang-Mills model is investigated. The gauge symmetry behavior at finite temperature is also investigated and it is shown that the gauge symmetry broken dynamically at zero temperature can be restored at finite temperatures. 相似文献
11.
ZHANG Yu GUI Yuan-Xing YU Fei 《理论物理通讯》2008,50(12):1345-1347
We investigate the evolution of an electromagnetic field in the spacetime of a stringy black hole. The object picture of the quasinormal ringing has been obtained by the finite difference method. Compared with a Schwarzschild black hole, the results show that the electromagnetic field damps more slowly for a stringy black hole. 相似文献
12.
SUN Hong-Zhang TANG Zheng-Xin 《理论物理通讯》2008,50(8):425-428
A stochastic local limited one-dimensional rice-pile model is numerically investigated. The distributions for avalanche sizes have a clear power-law behavior and it displays a simple finite size scaling. We obtain the avalanche exponents Ts= 1.54±0.10,βs = 2.17±0.10 and TT = 1.80±0.10, βT =1.46 ± 0.10. This self-organized critical model belongs to the same universality class with the Oslo rice-pile model studied by K. Christensen et al. [Phys. Rev. Lett. 77 (1996) 107], a rice-pile model studied by L.A.N. Amaral et al. [Phys. Rev. E 54 (1996) 4512], and a simple deterministic self-organized critical model studied by M.S. Vieira [Phys. Rev. E 61 (2000) 6056]. 相似文献
13.
Decoy state method quantum key distribution (QKD) is one of the promising practical solutions for BB84 QKD with coherent light pulses. The number of data-set size in practical QKD protocol is always finite, which will cause statistical fluctuations. In this paper, we apply absolutely statistical fluctuation to amend the yield and error rate of the quantum state. The relationship between exchanged number of quantum signals and key generation rate is analyzed in our simulation, which offers a useful reference for experiment. 相似文献
14.
Design on a highly birefringent and nonlinear photonic crystal fiber in the C waveband 总被引:1,自引:0,他引:1
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In this paper, a novel photonic crystal fiber (PCF) with high birefringence and nonlinearity is designed. The charac- teristics of birefringence, dispersion and nonlinearity are studied by using the full-vector finite element method (FVFEM). The numerical results show that the phase birefringence and nonlinear coefficient of PCF can be up to 4.51× 10-3 and 32.8972 w-l.km-1 at 1.55 μm, respectively. The proposed PCF could be found to have important applications in the polarization-dependent nonlinear optics such as the pulse compress and reshaping in the C waveband. 相似文献
15.
A two-dimensional Brans-Dicke star model with exotic matter and dark energy is studied in this paper, the field equation and balance equation are derived at finite temperature, the analytic solutions of these equations can be used to calculate the mass of star. In addition, we find that star's mass has a minimum when matter state parameter γ→0. 相似文献
16.
Adopting the approximation to the first order of chemical potential μ, we resolve rigidly the influence on fermion condensate from μ in QED3. We show that this condensate does not respond linear expression to μ. Moreover, the influence on fermion chiral condensate from chemieal potential is investigated. 相似文献
17.
A Schrodinger eigenvalue problem is solved for the 219 quantum simple harmonic oscillator using a finite element discretization of real space within which elements are adaptively spatially refined. We compare two competing methods of adaptively discretizing the real-space grid on which computations are performed without modifying the standard polynomial basis-set traditionally used in finite element interpolations; namely, (i) an application of the Kelly error estimator, and (ii) a refinement based on the local potential level. When the performance of these methods are compared to standard uniform global refinement, we find that they significantly improve the total time spent in the eigensolver. 相似文献
18.
XIONG Ai-Min CHEN Xiao-Song 《理论物理通讯》2008,50(12):1317-1322
We calculate the Casimir force at a finite cut-off A by summing the forces induced by the all fluctuation modes. We show that the Casimir force is independent of the cut-off function in the limit L∧ → ∞. There is a correction in the order of (L∧)^-2, when L∧ is finite and large. This correction becomes remarkable when L is comparable with the microscopic length scale ∧^-1. It has been demonstrated that the Casimir force at a finite cut-off should be defined by summing forces of all fluctuation modes, instead of the derivative of Casimir energy with respect to L where an additional derivative of the cut-off function has been introduced. 相似文献
19.
The Rosochatius system on the sphere, an integrable mechanical system discovered in the nineteenth century, is investigated in a suitably chosen framework with the sphere as an invariant set, to avoid the complicated constraint presentations. Higher order Rosochatius flows are defined and straightened out in the Jacobi variety of the associated hyperelliptic curve. A relation is found between these flows and the KdV equation, whose finite genus solution is calculated in the context of the Rosoehatius hierarchy. 相似文献
20.
Finite size effects on helical edge states in HgTe quantum wells with the spin orbit coupling due to bulk- and structure-inversion asymmetries
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There is a quantum spin Hall state in the inverted HgTe quantum well, characterized by the topologically protected gapless helical edge states lying within the bulk gap. It has been found that for a strip of finite width, the edge states on the two sides can couple together to produce a gap in the spectrum. The phenomenon is called the finite size effect in quantum spin Hall systems. In this paper, we investigate the effects of the spin-orbit coupling due to bulk- and structure-inversion asymmetries on the finite size effect in the HgTe quantum well by means of the numerical diagonalization method. When the bulk-inversion asymmetry is taken into account, it is shown that the energy gap Eg of the edge states due to the finite size effect features an oscillating exponential decay as a function of the strip width of the HgTe quantum well. The origin of this oscillatory pattern on the exponential decay is explained. Furthermore, if the bulk- and structure-inversion asymmetries are considered simultaneously, the structure-inversion asymmetry will induce a shift of the energy gap Eg closing point. Finally, based on the roles of the bulk- and structure-inversion asymmetries on the finite size effects, a way to realize the quantum spin Hall field effect transistor is proposed. 相似文献