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1.
This paper reprots that with Ni-based catalyst/solvent and with a dopant of NaN 3,large green single crystal diamonds with perfect shape are successfully synthesized by temperature gradient method under high pressure and high temperature in a China-type cubic anvil high-pressure apparatus (SPD-6×1200),and the highest nitrogen concentration reaches approximately 1214-1257 ppm calculated by infrared absorption spectra.The synthesis conditions are about 5.5 GPa and 1240-1300 C.The growth behaviour of diamond with high-nitrogen concentration is investigated in detail.The results show that,with increasing the content of NaN 3 added in synthesis system,the width of synthesis temperature region for growth high-quality diamonds becomes narrower,and the morphology of diamond crystal is changed from cube-octahedral to octahedral at same temperature and pressure,the crystal growth rate is slowed down,nevertheless,the nitrogen concentration doped in synthetic diamond increases.  相似文献   

2.
We investigate spontaneous emission properties and control of the zero phonon line (ZPL) from a diamond nitrogen- vacancy (NV) center coherently driven by a single ellipfically polarized control field. We use the Schrrdinger equation to calculate the probability amplitudes of the wave function of the coupled system and derive analytical expressions of the spontaneous emission spectra. The numerical results show that a few interesting phenomena such as enhancement, narrowing, suppression, and quenching of the ZPL spontaneous emission can be realized by modulating the polarization- dependent phase, the Zeeman shift, and the intensity of the control field in our system. In the dressed-state picture of the control field, we find that multiple spontaneously generated coherence arises due to three close-lying states decaying to the same state. These results are useful in real experiments.  相似文献   

3.
The effects of the addition of H3BO3 on the microstructure, phase formation, and microwave dielectric properties of (Zn0.TMg0.3)TiO3 ceramics sintered at temperatures ranging from 890 ℃ to 950 ℃ are investigated. H3BO3 as a sintering agent can effectively lower the sintering temperature of ZMT ceramics below 950 ℃due to the liquid-phase effect. The microwave dielectric properties are found to strongly correlate with the amount of H3BO3. With the increase in H3BO3 content, the dielectric constant (er) monotonically increases, but the quality factor (Q x f) reaches a maximum at 1 wt% H3BO3, and the apparent density of ZMT ceramics with H3BO3〉 1 wt% gradually decreases. At 950 ℃, the ZMT ceramics with 1% H3BO3 exhibit excellent microwave dielectric properties: er = 19.8, and Q x f -- 43800 GHz (8.94 GHz).  相似文献   

4.
张秀芝  王凯悦  李志宏  朱玉梅  田玉明  柴跃生 《物理学报》2015,64(24):247802-247802
利用低温显微荧光光谱研究了IIa型、Ib型、Ia型金刚石的缺陷发光性质. 研究发现, 随着氮含量增加, 间隙原子及空位逐渐被氮原子所束缚, 从而使得GR1中心、533.5 nm及580 nm中心等本征缺陷发光减弱, 而氮-空位复合缺陷(NV中心)及523.7 nm中心等氮相关缺陷发光增强. 高温退火后, 间隙原子与空位可以自由移动, IIa型金刚石中出现了NV0中心, Ib型金刚石中只剩下了NV中心, Ia型金刚石中氮原子之间发生团聚, 出现了H3中心及N3中心. 另外, 氮作为施主原子, 有利于负电荷缺陷的形成, 如3H 中心、NV- 中心.  相似文献   

5.
基于金刚石表面形貌的研究,有可能为反演金刚石的形成环境及为金刚石的合成工艺设计提供科学线索。采用光学显微镜、红外光谱、拉曼光谱对扬子克拉通西部的天然砂矿金刚石表面形貌与杂质氮、氢含量及有序度的关系研究结果表明,金刚石的表面形貌包括与晶体生长相关的微形貌、与晶体定向相关的熔蚀形貌、与晶体定向无关的熔蚀形貌及与应力形变相关的形貌等四大类;金刚石以IaAB型为主,氮含量介于22.90~752.40 μg·g-1之间,绝大部分样品的sp3杂化C-H键浓度含量高于sp2杂化C-H键,氢杂质的存在有利于A氮心向B氮心转变;sp3杂质C-H键的存在对金刚石表面出现的形貌类型可能不会造成实质性的影响,但极利于形成熔蚀坑;各种表面形貌的存在都会降低金刚石的表面有序度,但发育晕线者的表面有序度相对最高,而发育三角形生长片层者表面有序度最低。  相似文献   

6.
通过水热法合成了一种三维超分子配合物Zn(C12H8N3)2.H2O,经元素分析、紫外和红外光谱对其进行表征。用X射线单晶衍射测定了其晶体结构,该配合物晶体属单斜晶系,P21/c空间群,晶胞参数为:a=1.25239(10)nm,b=1.30233(11)nm,c=1.33167(11)nm,β=102.6950(10)°,Z=4,[Zn(C12H8N3)2.H2O],Mr=471.81,V=2.1189(3)nm^3,Dc=1.479g·cm^-3,μ=1.189mm^-1,F(000)=968,R1=0.0300,WR2=0.1017,GOF=1.005。该化合物由1个Zn(Ⅱ)离子、2个2-(2-吡啶基)苯并咪唑阴离子和1分子配位水组成。其中2-(2-吡啶基)苯并咪唑的1位氮原子、吡啶环上氮原子及水分子中氧原子与锌(Ⅱ)离子配位,形成五配位的畸变三角双锥结构,单胞分子之间通过氢键O(w)-H…N和π-π堆积作用相互构成三维网状超分子体系。固态荧光测试显示,该配合物具有强的蓝色荧光发射(λmax=456nm)。  相似文献   

7.
A series of diamonds with boron and sulfur co-doping were synthesized in the Fe Ni Mn Co-C system by temperature gradient growth(TGG) under high pressure and high temperature(HPHT). Because of differences in additives, the resulting diamond crystals were colorless, blue-black, or yellow. Their morphologies were slab, tower, or minaret-like. Analysis of the x-ray photoelectron spectra(XPS) of these diamonds shows the presence of B, S, and N in samples from which N was not eliminated. But only the B dopant was assuredly incorporated in the samples from which N was eliminated. Resistivity and Hall mobility were 8.510 ?·cm and 760.870 cm~2/V·s, respectively, for a P-type diamond sample from which nitrogen was eliminated. Correspondingly, resistivity and Hall mobility were 4.211×10~5 ?·cm and 76.300 cm~2/V·s for an N-type diamond sample from which nitrogen was not eliminated. Large N-type diamonds of type Ib with B–S doping were acquired.  相似文献   

8.
In this paper,we explore diamond synthesis with a series of experiments using an Fe-Ni catalyst and a P3N5 additive in the temperature range of 1250-1550 ℃ and the pressure range of 5.0-6.3 GPa.We also investigate the influence of nitrogen on diamond crystallization.Our results show that the synthesis conditions(temperature and pressure) increase with the amount of P3N5 additive increasing.The nitrogen impurity can significantly influence the diamond morphology.The diamonds stably grow into strip and lamellar shapes in the nitrogen-rich environment.The Fourier-transform infrared spectrum shows that the nitrogen concentration increases rapidly with the content of P3N5 additive increasing.By spectrum analysis,we find that with the increase of the nitrogen concentration,the Ib-type nitrogen atoms can aggregate in the A-centre form.The highest A-centre nitrogen concentration is approximately 840 ppm.  相似文献   

9.
The A1N nanostructures with a wide band-gap of 6.28 eV are considered as ideal cold cathode materials because of their low electron-affinity. Many methods have been devoted to fabricating A1N nanostructures, but high growth temperature over 800℃ and the use of the catalysts in most methods limit their practical application and result in their poor field-emission behaviours in uniformity. This paper reports that without any catalysts, a simple chemical vapour deposition method is used to synthesize aligned A1N nanocone arrays at 550℃ on silicon substrate or indium tin oxide glass. Field emission measurements show that these nanocones prepared at low temperature have an average turn-on field of 6 V/μm and a threshold field of 11.7 V/μm as well as stable emission behaviours at high field, which suggests that they have promising applications in field emission area.  相似文献   

10.
李勇  李宗宝  宋谋胜  王应  贾晓鹏  马红安 《物理学报》2016,65(11):118103-118103
在压力6.0 GPa和温度1600 K条件下, 利用温度梯度法研究了(111)晶面硼氢协同掺杂Ib型金刚石的合成. 傅里叶红外光谱测试表明: 氢以sp3杂化的形式存在于所合成的金刚石中, 其对应的红外特征吸收峰位分别位于2850 cm-1和2920 cm-1处. 此外, 霍尔效应测试结果表明: 所合成的硼氢协同掺杂金刚石具有p型半导体材料特性. 相对于硼掺杂金刚石而言, 由于氢的引入导致硼氢协同掺杂金刚石电导率显著提高. 为了揭示硼氢协同掺杂金刚石电导率提高的原因, 对不同体系进行了第一性原理理论计算, 计算结果表明其与实验结果符合. 该研究对金刚石在半导体领域的应用有重要的现实意义.  相似文献   

11.
Based on the analysis and the discussion of the influence of thermal ionization energy and various scatterings on magnetoresistance(MR) of p-type diamond films, a revised model of valence band split-off over temperature is put forward, and a corresponding calculation formula is given for the MR of p-type diamond films (Corbino discs). It is shown that the theoretical calculation that the MR of diamond films changes with temperature is consistent with the experiment. The influence of Fermi energy level on MR of diamond films is discussed. Additionally, the thermal effect mechanism of MR in p-type diamond films is also explored.  相似文献   

12.
Ge nano-belts with large tensile strain are considered as one of the promising materials for high carrier mobility metal- oxide-semiconductor transistors and efficient photonic devices. In this paper, we design the Ge nano-belts on an insulator surrounded by Si3N4 or SiO? for improving their tensile strain and simulate the strain profiles by using the finite difference time domain (FDTD) method. The width and thickness parameters of Ge nano-belts on an insulator, which have great effects on the strain profile, are optimized. A large uniaxial tensile strain of 1.16% in 50-nm width and 12-nm thickness Ge nano-belts with the sidewalls protected by Si3N4 is achieved after thermal treatments, which would significantly tailor the band gap structures of Ge-nanobelts to realize the high performance devices.  相似文献   

13.
Nonmetallic crystals with high thermal conductivity   总被引:2,自引:0,他引:2  
Nonmetallic crystals transport heat primarily by phonons at room temperature and below. There are only a few nonmetallic crystals which can be classed as high thermal conductivity solids, in the sense of having a thermal conductivity of > 1 W/cmK at 300K. Thermal conductivity measurements on natural and synthetic diamond, cubic BN, BP and AIN confirm that all of them are high thermal conductivity solids. Studies have been made of the effect on the thermal conductivity of nitrogen impurities in diamond, and oxygen impurities in AIN. The nitrogen impurities scatter phonons mostly from the strain field, the oxygen impurities scatter phonons mostly from the mass defects caused by aluminum vacancies. Pure A1N as well as pure SiC, BeO, BP and BeS conduct heat almost as well as does copper at room temperature, while pure natural and synthetic diamonds conduct heat five times better than copper.All of the nonmetallic solids that are known to possess high thermal conductivity have either the diamond-like, boron carbide, or graphite crystal structure. There are twelve different diamond-like crystals, a few boron carbide-type crystals, and two graphite structure crystals that have high thermal conductivity. Analyses of the rock-salt, fluorite, quartz, corundum and other structures show no candidates for this class. The four rules for finding crystals with high thermal conductivity are that the crystal should have (1) low atomic mass, (2) strong bonding, (3) simple crystal structure, and (4) low anharmonicity. The prime example of such a solid is diamond, which has the highest known thermal conductivity at 300K.  相似文献   

14.
顾利萍  唐春玖  江学范 《中国物理 B》2011,20(5):58104-058104
A much larger amount of bonded hydrogen was found in thick nanocrystalline diamond(NCD) films produced by only adding 0.24% N2 into 4% CH4 /H2 plasma,as compared to the high quality transparent microcrystalline diamond(MCD) films,grown using the same growth parameters except for nitrogen.These experimental results clearly evidence that defect formation and impurity incorporation(for example,N and H) impeding diamond grain growth is the main formation mechanism of NCD upon nitrogen doping and strongly support the model proposed in the literature that nitrogen competes with CH x(x=1,2,3) growth species for adsorption sites.  相似文献   

15.
Bismuth-containing semiconductor material is a hot topic in photocatalysts because of its effective absorption under the visible light. In this paper, we expect to explore a new bismuth-based photocatalyst by studying the subsolidus phase relations of the Bi2O3-Fe2O3-La2O3 system. The X-ray diffraction data shows that in this ternary system the ternary compound does not exist, while seven binary compounds (including one solid solution series Bi1-xLaxO1.5 with 0.167 〈 x 〈 0.339) are obtained and eight compatibility triangles are determined.  相似文献   

16.
Zhenghao Cai 《中国物理 B》2022,31(10):108104-108104
Diamond crystals were synthesized with different doping proportions of N—H—O at 5.5 GPa—7.1 GPa and 1370 °C—1450 °C. With the increase in the N—H—O doping ratio, the crystal growth rate decreased, the temperature and pressure conditions required for diamond nucleation became increasingly stringent, and the diamond crystallization process was affected. [111] became the dominant plane of diamonds; surface morphology became block-like; and growth texture, stacking faults, and etch pits increased. The diamond crystals had a two-dimensional growth habit. Increasing the doping concentration also increased the amount of N that entered the diamond crystals as confirmed via Fourier transform infrared spectroscopy. However, crystal quality gradually deteriorated as verified by the red-shifting of Raman peak positions and the widening of the Raman full width at half maximum. With the increase in the doping ratio, the photoluminescence property of the diamond crystals also drastically changed. The intensity of the N vacancy center of the diamond crystals changed, and several Ni-related defect centers, such as the NE1 and NE3 centers, appeared. Diamond synthesis in N—H—O-bearing fluid provides important information for deepening our understanding of the growth characteristics of diamonds in complex systems and the formation mechanism of natural diamonds, which are almost always N-rich and full of various defect centers. Meanwhile, this study proved that the type of defect centers in diamond crystals could be regulated by controlling the N—H—O impurity contents of the synthesis system.  相似文献   

17.
Bi0.9Ba0.lFeO3 (BBFO)/La2/3Srl/3MnO3 (LSMO) heterostructures are fabricated on LaA103 (100) substrates by pulsed laser deposition. Giant remnant polarization value (~ 85 μC/cm2) and large saturated magnetization value (~ 12.4 emu/cm3) for BBFO/LSMO heterostructures are demonstrated at room temperature. Mixed ferroelectric domain structures and low leakage current are observed and in favor of enhanced ferroelectrie properties in the BBFO/LSMO het- erostructures. The magnetic field-dependent magnetization measurements reveal the enhancement in the magnetic moment and improved magnetic hysteresis loop originating from the BBFO/LSMO interface. The heterostructure is proved to be effective in enhancing the ferroelectric and ferromagnetic performances in multiferroic BFO films at room temperature.  相似文献   

18.
The nuclei around magic number N = 126 are investigated in the deformed relativistic mean field (RMF) model with effective interactions TMA. We focus investigations on the N = 126 isotonic chain. The N = 126 shell evolution is studied by analyzing the variations of two-neutron (proton) separation energies, quadruple deformations, single particle levels etc. The good agreement of two-neutron separation energies between experimental data and calculated values is reached. The RMF theory predicts that the sizes of N = 126 shell become smaller and smaller with the increasing of proton number Z. However, the N = 126 shell exists in our calculated region all along. According to the calculated two-proton separation energies, the RMF theory suggests ^220Pu is a two-proton drip-line nucleus in the N = 126 isotonic chain.  相似文献   

19.
The behaviour of electrons during electron-assisted chemical vapour deposition of diamond is investigated using Monte Carlo simulation. The electron energy distribution and velocity distribution are obtained over a wide range of reduced field E/N (the ratio of the electric field to gas molecule density) from 100 to 2000 in units of 1Td=10-17Vcm2. Their effects on the diamond growth are also discussed. The main results obtained are as follows. (1) The velocity profile is asymmetric for the component parallel to the field. The velocity distribution has a peak shift in the field direction. Most electrons possess non-zero velocity parallel to the substrate. (2) The number of atomic H is a function of E/N. (3) High-quality diamond can be obtained under the condition of E/N from 50 to 800Td due to sufficient atomic H and electron bombardment.  相似文献   

20.
WO3 bulk and various surfaces are studied by an ab-initio density functional theory technique. The band structures and electronic density states of WO3 bulk are investigated. The surface energies of different WO3 surfaces are compared and then the (002) surface with minimum energy is computed for its NH3 sensing mechanism which explains the results in the experiments. Three adsorption sites are considered. According to the comparisons of the energy and the charge change between before and after adsorption in the optimal adsorption site Olc, the NH3 sensing mechanism is obtained.  相似文献   

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