Influence of the surface morphology of single-crystal Si(111) substrates on the magnetic properties of epitaxial cobalt films

The epitaxial films Co(111)/Cu(111)-R30°/Si(111) have been grown on the atomically smooth and vicinal Si(111) surfaces. The roughnesses of the substrate and the cobalt film have been determined using scanning tunneling microscopy. The dependence of the coercive force has been investigated as a function of the azimuthal angle. The dependence of the magnetic anisotropy and the coercive force on the surface roughness has been determined. It has been shown that, in the epitaxial cobalt films deposited on the atomically smooth silicon surfaces, crystalline anisotropy of the 〈110〉 type leads to the isotropy of the magnetization reversal processes. The step-induced uniaxial anisotropy has been observed upon deposition on the vicinal surfaces. The films deposited on the atomically smooth surfaces have a complex domain structure.     

Magnetic properties of Co films grown on the modified Si(111) surface

The magnetic properties and domain structure of epitaxial Co films grown on a modified Si(111) surface were studied. First, the processes of growth of copper silicide nanostructures on the Si(111) surface were investigated. Copper silicide clusters were formed on the Si(111)-5.55 × 5.55-Cu surface at a substrate temperature of ～550°C. It was established that the nanostructures formed have a perfect faceting, and the lateral edges and long wire side are oriented along the Si〈110〉 crystallographic directions. Then, Co films were deposited on the formed structures. The investigation of the coercive force and reduced remanent magnetization showed that the Co(111) films have the sixth-order crystalline anisotropy. It was found that the coercive force of the Co films deposited on the Cu buffer layer is approximately six times less than that of the Co films deposited on the Si(111)-5.55 × 5.55-Cu surface and Si(111)?5.55 × 5.55-Cu/(Cu-Si) cluster surface.     

Magnetic properties of Co/Pd multilayered films on porous Al<Subscript>2</Subscript>O<Subscript>3</Subscript> templates with developed cell substructure

We studied the structure and magnetic properties of porous multilayered Co/Pd films deposited on the templates of anodized Al₂O₃ with a specific surface morphology that is characterized by a cellular–porous structure with several pores inside each cell. X-ray diffraction analysis and reflectometry are used to study the peculiarities of the formation of phases in deposited films. The effect of morphological features of porous Co/Pd films on their magnetoanisotropic properties and magnetization reversal processes (magnetization reversal mechanisms, domain structure of films, and coercive field H _c ) is revealed by SQUID magnetometry and magnetic force microscopy.     

Magnetization reversal of elliptic Co/Si/Co nanodisks in the field of a magnetic-force microscope probe

The processes of local magnetization reversal of elliptic Co/Si/Co nanodisks under the action of a nonuniform magnetic field of a magnetic-force microscope (MFM) probe have been investigated. The specific features of the distribution of the phase MFM contrast from particles with ferromagnetic and antiferromagnetic configurations of the magnetic moments in neighboring Co layers have been discussed. It has been shown experimentally that, under the action of the probe field, there occur orientational transitions of two types: transitions from the ferromagnetic configuration to the antiferromagnetic configuration due to the reorientation of the magnetization of the upper layer and transitions in the antiferromagnetic configuration with a change in the orientation of the magnetic moment in both ferromagnetic layers. The presented results of micromagnetic simulation of the processes of transformation of the magnetization in such particles under the action of the MFM probe field explain the main regularities of the magnetization reversal processes.     

Magnetization reversal in exchange biased Co/CoO patterns

The influence of patterning on exchange bias has been investigated using arrays of micron-sized Co/CoO dots with different lateral confinement and length-to-width ratio. The patterned samples show higher coercive and exchange bias fields than a continuous Co/CoO bilayer. As in unpatterned film, magnetization reversal mechanisms on opposite sides of the hysteresis loops of the microstructured samples are different. However, with the increase of lateral confinement and shape anisotropy of the dots, the asymmetry in the magnetization reversal starts to differ from that observed in continuous Co/CoO films.     

Study of the structural perfection and distribution/redistribution of silicon in epitaxial GaAs films grown by molecular beam epitaxy on (100), (111)A, and (111)B substrates

Silicon distribution before and after thermal annealing in thin doped GaAs layers grown by molecular beam epitaxy on (100)-, (111)A-, (111)B-oriented substrates is studied by X-ray diffraction and SIMS. The surface morphology of the epitaxial films inside and outside an ion etch crater that arises during SIMS measurements is studied by atomic force microscopy. Distinctions in the surface relief inside the crater for different orientations have been revealed. Observed differences in the doping profiles are explained by features of the surface relief developing in the course of ion etching in SIMS measurements and by enhanced Si diffusion via growth defects.     

Effect of CoSi2 buffer layer on structure and magnetic properties of Co films grown on Si（001） substrate

Buffer layer provides an opportunity to enhance the quality of ultrathin magnetic films.In this paper,Co films with different thickness of Co Si2buffer layers were grown on Si(001)substrates.In order to investigate morphology,structure,and magnetic properties of films,scanning tunneling microscope(STM),low energy electron diffraction(LEED),high resolution transmission electron microscopy(HRTEM),and surface magneto-optical Kerr effect(SMOKE)were used.The results show that the crystal quality and magnetic anisotropies of the Co films are strongly affected by the thickness of Co Si2buffer layers.Few Co Si2monolayers can prevent the interdiffusion of Si substrate and Co film and enhance the Co film quality.Furthermore,the in-plane magnetic anisotropy of Co film with optimal buffer layer shows four-fold symmetry and exhibits the two-jumps of magnetization reversal process,which is the typical phenomenon in cubic(001)films.     

Epitaxial Properties of Co-Doped ZnO Thin Films Grown by Plasma Assisted Molecular Beam Epitaxy

High quality Co-doped ZnO thin films are grown on single crystalline Al2O3（0001） and ZnO（0001） substrates by oxygen plasma assisted molecular beam epitaxy at a relatively lower substrate temperature of 450℃. The epitaxial conditions are examined with in-situ reflection high energy electron diffraction （RHEED） and ex-situ high resolution x-ray diffraction （HRXRD）. The epitaxial thin films are single crystal at film thickness smaller than 500nm and nominal concentration of Co dopant up to 20%. It is indicated that the Co cation is incorporated into the ZnO matrix as Co^2＋ substituting Zn^2＋ ions. Atomic force microscopy shows smooth surfaces with rms roughness of 1.9 nm. Room-temperature magnetization measurements reveal that the Co-doped ZnO thin films are ferromagnetic with Curie temperatures Tc above room temperature.     

Anisotropy of the optical and magneto-optical response of Au/Co/Au/Cu multilayers grown on vicinal Si (111) surfaces

The optical and magneto-optical second harmonic reflectivity response of Au/Co/Au/Cu multilayers grown on vicinal Si (111) substrates has been studied. These azimuthal optical non-linear experiments check the uniaxial character of the crystallinity of the Au buffer layer and the magnetic behavior of the ultrathin Co films in the metallic multilayer. They clearly show the strong dependence of the growth parameters and the misorientation of the vicinal surface on the SHG reflectivity signals. This uniaxial behavior is also correlated to linear MOKE experiments on the magnetic anisotropy with an easy magnetization axis parallel to the step edges. Received: 16 October 2001 / Published online: 29 May 2002     

Study of the structural and magnetic characteristics of epitaxial Fe3Si/Si(111) films

The results of the structural and magnetic studies of the epitaxial structure prepared during the simultaneous evaporation from two iron and silicon sources on an atomically pure Si(111)7 × 7 surface at a substrate temperature of 150°C have been presented. The epitaxial structure has been identified as a single-crystal Fe₃Si silicide film with the orientation Si[111]‖Fe₃Si[111] using methods of the X-ray structural analysis, transmission electron microscopy, and reflection high-energy electron diffraction. It has been established that the epitaxial Fe₃Si film at room temperature has magnetic uniaxial anisotropy (H _a = 26 Oe) and a relatively narrow uniform ferromagnetic resonance line (ΔH = 11.57 Oe) measured at a pump frequency of 2.274 GHz.     

Thermal and kinetic surface roughening studied by scanning tunneling microscopy and atomic force microscopy

Recent studies of thermal roughening on Si surfaces and kinetic roughening of some growing films, copper and tungsten, by using scanning tunneling microscopy and atomic force microscopy are reviewed. A logarithmic divergence of the surface height fluctuations of Si(111) vicinal surfaces is confirmed, in agreement with the theoretical prediction of rough surface in thermal equilibrium. For the kinetically formed rough surfaces, power law dependences of the interface width on the system size are clearly observed. Furthermore, the tungsten films show a short-range scaling regime and a long-range “smooth” regime. The roughness exponents α are compared with theoretical predictions: for the typical Cu electrode position condition (α=1/2), the exponent appears to be close to that found for local growth models, and for tungsten films (0.7～0.8), it is consistent with recent predictions for growth where surface diffusion is predominant.     

Scanning tunneling microscopy observation of ultrathin epitaxial CoSi<Subscript>2</Subscript>(111) films grown at a high temperature

Scanning tunneling microscopy (STM) is used to study the basic laws of growth of ultrathin epitaxial CoSi₂(111) films with Co coverages up to 4 ML formed upon sequential deposition of Co and Si atoms taken in a stoichiometric ratio onto the Co–Si(111) surface at room temperature and subsequent annealing at 600–700°C. When the coverage of Co atoms is lower than ~2.7 ML, flat CoSi₂ islands up to ~3 nm high with surface structure 2 × 2 or 1 × 1 grow. It is shown that continuous epitaxial CoSi₂ films containing 3–4 triple Si–Co–Si layers grow provided precise control of deposition. CoSi₂ films can contain inclusions of the local regions with (2 × 1)Si reconstruction. At a temperature above 700°C, a multilevel CoSi₂ film with pinholes grows because of vertical growth caused by the difference between the free energies of the CoSi₂(111) and Si(111) surfaces. According to theoretical calculations, structures of A or B type with a coordination number of 8 of Co atoms are most favorable for the CoSi₂(111)2 × 2 interface.     

Influence of induced anisotropy on the processes of magnetization reversal of cobalt circular nanodots

The magnetic structure and the processes of magnetization reversal of individual cobalt nanodots and arrays of cobalt nanodots have been studied using the magneto-optical Kerr effect and magnetic force microscopy. Arrays of nanodots have been prepared by ion etching from a continuous cobalt film. Magnetic anisotropy is induced during deposition of the cobalt films. The nanodots have the diameter d = 600 nm and the period varying from 1.5d to 3.0d. Magnetic force microscopy images have shown that the induced magnetic anisotropy affects the orientation of magnetization of noninteracting nanodots and the direction of displacement of the magnetic vortex center in the nanodots coupled by the dipole-dipole interaction.     

Effect of the number of nanodisks in two-dimensional arrays on magnetization reversal processes

The magnetic properties of nanodisks packed into square arrays with various numbers of elements in the face have been studied. It has been shown that the vortex nucleation field oscillates with increasing number of nanodisks; the oscillation behavior depends on the nanodisk thickness. The synchronism of the vortex state formation varies with increasing number of nanodisks. The effect of the magnetostatic interaction of nanodisks on the critical fields of magnetization reversal has been estimated for the cases of vortex and single-domain states.     

Features of the magnetic properties of Pd/Fe/Pd films and nanodisks

The magnetic properties of Pd/Fe/Pd films and nanodisks with diameter 600 nm fabricated by focused ion beam milling were investigated. A fourth-order anisotropy of magnetization reversal in nanodisk arrays was observed during the experiment. It was demonstrated that the anisotropy occurs due both to the breaking of symmetry of dipole-dipole interactions at array boundaries and to the initiation of inhomogeneous configurations of magnetization in nanodisks.     

Chiral surfaces and metal/ceramic heteroepitaxy in the Pt/SrTiO3(621) system

Low-energy electron diffraction (LEED), atomic force microscopy (AFM), and X-ray diffraction (XRD) have been used to investigate the structural and morphological character of a naturally chiral ceramic SrTiO₃(621) substrate and of Pt and Cu thin films deposited on its surface. AFM experiments showed that as-received chirally-oriented SrTiO₃(621) substrates display atomically smooth surface morphologies, while LEED patterns revealed that the surface structure has a net chirality. Pt(621) and Cu(621) thin films were grown heteroepitaxially on SrTiO₃(621) substrates, as confirmed by XRD. AFM showed that the film surfaces were atomically smooth and LEED illustrated that the Pt films exhibit surface chirality, and by implication that the atomically-flat chirally-oriented Cu films also have chiral surfaces. The characteristics of the observed LEED patterns, where splitting of diffraction spots is considered to arise from the kinked step features of naturally chiral fcc metal surfaces, are discussed with respect to existing models. These results indicate that the chiral SrTiO₃(621) ceramic surface drives the growth of single-enantiomer, chiral, metal (621) thin films.     

Structure characteristics and magnetization reversal of high-coercivity cobalt-based alloy films

The structure of “continuous” Co-W and Co-Ni-W alloy films, as well as Co-containing metallic oxide heterogeneous films, covering the aluminum surface is studied in dependence of intergranular magnetic interaction and magnetization reversal processes by taking the angular dependences of the coercive force and irreversible susceptibility and also from δM curves.     

Annealing study of two-dimensional patterned Ge nanostructures via nanosphere lithography

Experimental studies on patterning hexagonal Ge nanostructures have been conducted on Si substrates through deposition of Ge with colloidal particles as a mask. The deposited Ge thin film possesses, according to the X-ray diffraction measurements, in plane texture, being epitaxial and aligned with the (111) Si substrate. The size distribution of the patterned Ge nanostructures is narrow, as indicated by the atomic force microscopy and scanning electron microscopy measurements. We have obtained Ge nanostructures with lateral dimension of 490 nm (height 12 nm), 200 nm (height 6 nm) and 82 nm (height 6 nm) by using different sizes of polystyrene spheres. We have performed in depth studies of the Ge nanostructures’ behavior due to thermal and rapid thermal post-annealing processes. FT micro-Raman spectroscopy shows that there is no Si intermixing during the annealing process. In order to quantify the changes in the height and lateral dimension, we have performed atomic force microscopy and white light interferometry analysis. The changes in shape and the decrease in the area of a cross-section of Ge nanostructure will be discussed in respect to similar results shown in the literature for Ge thin films during the annealing process.     

The effect of substrate on magnetic properties of Co/Cu multilayer nanowire arrays

Ordered Co/Cu multilayer nanowire arrays have been fabricated into anodic aluminium oxide templates with Ag and Cu substrate by direct current electrodeposition. This paper studies the morphology, structure and magnetic properties by transmission electron microscopy, selective area electron diffraction, x-ray diffraction, and vibrating sample magnetometer. X-ray diffraction patterns reveal that both as-deposited nanowire arrays films exhibit face-centred cubic structure. Magnetic measurements indicate that the easy magnetization direction of Co/Cu multilayer nanowire arrays films on Ag substrate is perpendicular to the long axis of nanowire, whereas the easy magnetization direction of the sample with Cu substrate is parallel to the long axis of nanowire. The change of easy magnetization direction attributed to different substrates, and the magnetic properties of the nanowire arrays are discussed.     

The comparison between CdS thin films grown on Si(111) substrate and quartz substrate by femtosecond pulsed laser deposition

Two kinds of cadmium sulfate (CdS) thin films have been grown at 600 °C onto Si(111) and quartz substrates using femtosecond pulsed laser deposition (PLD). The influence of substrates on the structural and optical properties of the CdS thin films grown by femtosecond pulsed laser deposition have been studied. The CdS thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), photoluminescence (PL) and Raman spectroscopy. Although CdS thin films deposited both on Si(111) and quartz substrates were polycrystalline and hexagonal as shown by the XRD , SEM and AFM results, the crystalline quality and optical properties were found to be different. The size of the grains for the CdS thin film grown on Si(111) substrate were observed to be larger than that of the CdS thin film grown on quartz substrate, and there is more microcrystalline perpendicularity of c-axis for the film deposited on the quartz substrate than that for the films deposited on the Si substrate. In addition, in the PL spectra, the excitonic peak is more intense and resolved for CdS film deposited on quartz than that for the CdS film deposited on Si(111) substrate. The LO and TO Raman peaks in the CdS films grown on Si(111) substrate and quartz substrate are different, which is due to higher stress and bigger grain size in the CdS film grown on Si(111) substrate, than that of the CdS film grown on the amorphous quartz substrate. All this suggests that the substrates have a significant effect on the structural and optical properties of thin CdS films. PACS 81.15.Fg; 81.05.Ea; 78.20.-e; 78.67.-n; 42.62.-b