Property study of Si + -ion-implanted Nd:YVO 4 waveguides

Planar waveguides were formed in Nd:YVO₄ crystals by 3.0-MeV Si⁺-ion implantation at doses of 1×10¹³–1.5×10¹⁵ ions/cm² at room temperature. The effective refractive indices of the waveguide propagation modes were measured by using a prism-coupling method. It was found that the number of the propagation modes is dependent on the doses for the waveguides in Nd:YVO₄. The atom displacement in the near-surface region (about 2 μm beneath the surface) of the Nd:YVO₄ crystal induced by the implantation was simulated by using the TRIM 98 (transport and range of ions in matter) code. The possible reasons for the waveguide formation are discussed in a primary way. Received: 17 July 2002 / Revised version: 20 September 2002 / Published online: 11 December 2002 RID="*" ID="*"Corresponding author. Fax: +86-531-8565167, E-mail: drfchen@sdu.edu.cn     

Tailored ablation processing of advanced biomedical hydroxyapatite by femtosecond laser pulses

The micromachining of hydroxyapatite (HAp) is highly important for orthopedics and dentistry, since human bone and teeth consist mainly of HAp. We demonstrate ultrashort Ti:sapphire laser ablation of HAp, using pulse-widths of 50 fs, 500 fs, and 2 ps at a wavelength of 820 nm and at 1 kpps. The crucial medical issue is to preserve the chemical properties of the machined (ablated) surface. If the chemical properties of HAp change, the human bone or tooth cannot re-grow after laser processing. Using X-ray photoelectron spectroscopy, we observe chemical properties of HAp ablated in air. The HAp is ablated at laser fluences of 3.2 J/cm² (6.4×10¹³ W/cm² at 50 fs), 3.3 J/cm² (6.6×10¹² W/cm² at 500 fs), and 9.6 J/cm² (4.8×10¹² W/cm² at 2 ps), respectively. As a result it is found that the ablated surface is unchanged after laser ablation over the pulse-width range used in this experiment. Received: 7 October 2002 / Accepted: 20 January 2003 / Published online: 28 May 2003 RID="*" ID="*"Corresponding author. Fax: +81-45/566-1533, E-mail: obara@obara.elec.keio.ac.jp     

Electrooptic properties of lithium niobate crystals for extremely high external electric fields

The electrooptic effect in lithium niobate crystals (LiNbO₃) for extremely high externally applied electric fields of up to 65 kV/mm is investigated. Homogeneous electrooptic refractive-index changes of up to 4.8×10^-3 are found for ordinarily polarized light. No quadratic electrooptic effect is observed. An upper bound for the quadratic electrooptic coefficient of |s₁₃|≤2.3×10^-21 m²/V² is determined. Electrooptic, angular, and wavelength tuning of the Bragg condition of a thermally fixed hologram are demonstrated. Received: 29 October 2002 / Revised version: 14 January 2003 / Published online: 26 March 2003 RID="*" ID="*"Corresponding author. E-mail: ml@uni-bonn.de     

In situ observation of dynamics of plasma self-channeling and bulk modification in silica glasses induced by a high-intensity femtosecond laser

The time-resolved dynamics of plasma self-channeling and refractive index bulk modification in silica glasses were first observed in situ using a high-intensity femtosecond (110 fs) Ti:sapphire laser (λ_p=790 nm). Plasma channeling is induced in silica glass at an irradiation higher than an input intensity of 1.5×10¹² W/cm² and photoinduces either the refractive-index modification or optical crack modification. In the domain of refractive-index modification, the lifetime of induced plasma self-channeling was 20 ps and the structural transition time for forming the refractive-index change was 10 ps. In the domain of optical cracks, however, the lifetime of induced plasma formation was 30 ps and the structural transition time for forming the optical cracks was 40 ps. According to electron spin resonance spectroscopic (ESP) measurement, it was found that the defect concentration of the SiE^′ center increased significantly in the refractive index modification region. A maximum value of the refractive-index change Δn was measured to be 1.6×10^-2. The intensity profile of the output beam transmitted through the refractive-index modification showed that the bulk modification produced a permanent optical waveguide. Received: 8 April 2002 / Accepted: 12 April 2002 / Published online: 22 November 2002 RID="*" ID="*"Corresponding author. Fax: +81-48/462-4682, E-mail: shcho@riken.go.jp     

Sensitive absorption measurements in the near-infrared region using off-axis integrated-cavity-output spectroscopy

A novel instrument that employs a high-finesse optical cavity as an absorption cell has been developed for sensitive measurements of gas mixing ratios using near-infrared diode lasers and absorption-spectroscopy techniques. The instrument employs an off-axis trajectory of the laser beam through the cell to yield an effective optical path length of several kilometers without significant unwanted effects due to cavity resonances. As a result, a minimum detectable absorption of approximately 1.4×10^-5 over an effective optical path of 4.2 km was obtained in a 1.1-Hz detection bandwidth to yield a detection sensitivity of approximately 3.1×10^-11 cm^-1 Hz^-1/2. The instrument has been used for sensitive measurements of CO, CH₄, C₂H₂ and NH₃. Received: 6 May 2002 / Revised version: 31 May 2002 / Published online: 2 September 2002 RID="*" ID="*"Corresponding author. Fax: +1-650/965-7074, E-mail: d.baer@lgrinc.com     

N+BF<Subscript>2</Subscript> and N+C+BF<Subscript>2</Subscript> high-dose co-implantation in silicon

Nitrogen and boron BF₂, and nitrogen, carbon, and boron BF₂ high-dose (6×10¹⁶–3×10¹⁷ cm^-2) co-implantation were performed at energies of about 21–77 keV. Subsequent high-temperature annealing processes (600, 850, and 1200 °C) lead to the formation of three and two surface layers respectively. The outer layer mainly consists of polycrystalline silicon and some amorphous material and Si₃N₄ inclusions. The inner layer is highly defective crystalline silicon, with some inclusions of Si₃N₄ too. In the N+B-implanted sample the intermediate layer is amorphous. Co-implantation of boron with nitrogen and with nitrogen and carbon prevents the excessive diffusivity of B and leads to a lattice-parameter reduction of 0.7–1.0%. Received: 10 January 2002 / Accepted: 30 May 2002 / Published online: 4 November 2002 RID="*" ID="*"Corresponding author. Fax: +34-91/3974895; E-mail: Lucia.Barbadillo@uam.es     

Recrystallization behavior of high-dose Mn+-implanted GaAs

Raman spectroscopy was used to study the evolution of host lattice recrystallization in Mn⁺-implanted GaAs. A high dose of Mn⁺-ions (>10¹⁵ cm^-2) was introduced into semi-insulating GaAs by the combinatorial implantation method. Subsequent thermal annealing at 920 °C was carried out to re-grow the implantation-induced amorphous layers. The dependence of the recrystallization behavior on the Mn content was systematically observed. The lattice orientation of recrystallized layers in the surface changed after high-dose implantation (>1.6×10¹⁵ cm^-2) and annealing. The size of the recrystallized crystallites decreased with increasing Mn⁺ dose, as indicated by images from atomic force microscopy. The decrease in the phonon frequency of the Raman lines with the size reduction of microcrystals was in good agreement with the spatial correlation model. However, at higher doses (>7×10¹⁶ cm^-2), a blue shift of the frequency was observed due to the compressive stress exerted on the microcrystals. Received: 5 March 2002 / Accepted: 29 August 2002 / Published online: 8 January 2003 RID="*" ID="*"Corresponding author. Fax: +86-21/658-30734, E-mail: jqwang@mail.sitp.ac.cn     

Lasing action in air induced by ultra-fast laser filamentation

The backscattered fluorescence of nitrogen from filaments generated by intense ultra-fast Ti:sapphire laser pulses propagating in air is studied. The backscattered fluorescence from N₂ molecules and ions show an exponential increase with increasing filament length, indicating amplified spontaneous emission. Received: 11 October 2002 / Revised version: 3 December 2002 / Published online: 26 February 2003 RID="*" ID="*"Corresponding author. Fax: +1-418/6562-623, E-mail: qluo@phy.ulaval.ca     

Laser-induced etching and deposition of W using a-SiO<Subscript>2</Subscript> microspheres

A regular lattice of a-SiO₂ microspheres on a quartz support is used as a microlens array for laser-induced surface patterning by etching and deposition of W in atmospheres of WF₆ and WF₆+H₂, respectively. Received: 22 July 2002 / Accepted: 30 July 2002 / Published online: 4 December 2002 RID="*" ID="*"Corresponding author. Fax: +43-732/2468-9242, Email: dieter.baeuerle@jku.at     

Third-order nonlinear optical response of Au-core CdS-shell composite nanoparticles embedded in BaTiO<Subscript>3</Subscript> thin films

Au-core CdS-shell composite nanoparticles were synthesized by a direct self-assembly process and integrated into BaTiO₃ thin films. Characterization by transmission electron microscopy showed that the average diameter of these composite nanoparticles was about 8 nm. Using the femtosecond time-resolved optical Kerr effect method, we investigated the third-order nonlinear optical response of the Au@CdS nanoparticles embedded in the BaTiO₃ thin films at a wavelength of 800 nm. An ultrafast nonlinear response and a large effective third-order nonlinear susceptibility of χ⁽³⁾=7.7×10^-11 esu were observed. We attributed the enhancement of the third-order optical nonlinearity to a localized electric field effect originating from the core-shell structure under off-surface-plasmon resonance conditions. Received: 13 May 2002 / Revised version: 23 October 2002 / Published online: 3 April 2003 RID="*" ID="*"Corresponding author. Fax: +86-21/6510-4949, E-mail: sxqian@fudan.ac.cn     

Ultrahigh-efficiency TEM<Subscript>00</Subscript> diode-side-pumped Nd:YVO<Subscript>4</Subscript> laser

Ultrahigh-efficiency TEM₀₀ operation is demonstrated in a diode-pumped Nd:YVO₄ laser in a bounce amplifier geometry using a specially designed astigmatically optimised cavity configuration. Optical efficiency >68% is demonstrated and up to 27.1 W of output power for multimode operation. For single-mode TEM₀₀ operation, an output power of 23.1 W for 39.5 W of diode pumping was produced with beam propagation parameters of M_x ²=1.3 and M_y ²=1.1. Received: 10 October 2002 / Revised version: 9 December 2002 / Published online: 19 March 2003 RID="*" ID="*"Corresponding author. Fax: +44-20/7594-7744, E-mail: a.minassian@ic.ac.uk     

Cavity-enhanced absorption spectroscopy with a rapidly swept diode laser

Cavity-enhanced absorption spectroscopy is explained in terms of the transmission function of a rapidly swept interferometer, and the integrated transmission is shown to be proportional to the cavity ringdown time. The technique is demonstrated on the b¹Σ_g ⁺-X³Σ_g ^-  (1,0) band in molecular oxygen at 687 nm using a tunable diode laser and a relative-ly high-Q optical cavity (finesse ≈4000). A detection limit of 3×10^-8 cm^-1 s^1/2 is achieved for a 0.8 cm^-1 scanning range. Received: 24 June 2002 / Revised version: 5 August 2002 / Published online: 15 November 2002 RID="*" ID="*"Corresponding author. Fax: +44-1865/275410, E-mail: peverall@physchem.ox.ac.uk     

Oxygen plasma and high pressure H<Subscript>2</Subscript>O vapor heat treatments used to fabricate polycrystalline silicon thin film transistors

Oxygen plasma and high pressure H₂O vapor heat treatment were applied to fabrication of n-channel polycrystalline silicon thin film transistors (poly-Si TFTs). 13.56 MHz-oxygen-plasma treatment at 250 °C, 100 W for 5 min effectively reduced defect states of 25-nm-thick silicon films crystallized by 30 ns-pulsed XeCl excimer laser irradiation. 1.3×10⁶-Pa-H₂O vapor heat treatment at 260 °C for 3 h was carried out in order to improve electrical properties of SiO_x gate insulators and SiO_x/Si interfaces. A carrier mobility of 470 cm²/V s and a low threshold voltage of 1.8 V were achieved for TFTs fabricated with crystallization at 285 mJ/cm². Received: 18 November 2002 / Accepted: 25 November 2002 / Published online: 11 April 2003 RID="*" ID="*"Corresponding author. Fax: +81-42/388-7109, E-mail: tsamesim@cc.tuat.ac.jp     

Experimental investigation of non-linear selective reflection at the interface of Cs atomic vapor and quartz

We present an experimental study of non-linear selective reflection (SR) at a quartz–Cs-vapor interface in a V-type three-level scheme. The non-linear selective reflection at the Cs D₂ resonance line (⁶ S _1/2F=4→⁶ P _3/2) is monitored with and without pumping. The sub-Doppler reflection spectrum is observed and the effect of pumping on the signal of the selective reflection is investigated. The experimental result is in agreement with the theoretical calculation. Received: 16 April 2002 / Revised version: 12 June 2002 / Published online: 25 September 2002 RID="*" ID="*"Corresponding author. Fax: +86-351/701-1500, E-mail: zhaojm@sxu.edu.cn     

Laser-based photoacoustic ammonia sensors for industrial applications

An industrial trace-ammonia sensor based on photoacoustic spectroscopy and CO₂ lasers has been developed for measuring ammonia with a 1σ detection limit of 220 parts-per-trillion (ppt) in an integration time of 30 s. The instrument response time for measuring ammonia was 200 s, limited by adsorption effects due to the polar nature of ammonia. The minimum detectable fractional absorbance was 2.0×10^-7, and the minimum normalized detectable absorption coefficient for this system was 2.4×10^-7 W cm^-1/z. The 9R(30) transition of the CO₂ laser at 9.22 μm with 2 W of output power was used to probe the strong sR(5,K) multiplet of ammonia at the same wavelength. This sensor was demonstrated with an optically multiplexed configuration for simultaneous measurement in four cells. Received: 3 April 2002 / Revised version: 31 May 2002 / Published online: 21 August 2002 RID="*" ID="*"Corresponding author. Fax: +1-310/458-0171, E-mail: webber@pranalytica.com     

Boron isotope enrichment in nanosecond pulsed laser-ablation plume

Boron isotopic enrichment is observed in the laser ablation of B₄C target using nanosecond (ns) wide 532 nm laser beam of a Nd-YAG laser. B¹⁰/B¹¹ ratio of 0.9 against the natural abundance of 0.25 is obtained at a laser power density of 8×10⁸ W/cm² (fluence of 6.4 J/cm²). The enrichment as a function of laser power density is demonstrated using a quadrupole mass spectrometer. Apart from higher enrichment factor, only singly charged ions are found in the laser plume from the B₄C target, in contrast to the multiply charged ions from the BN target reported in a recent report using femtosecond (fs) laser pulses. This study indicates the possibility of using less expensive, widely used ns lasers, which can also yield a higher throughput per pulse than a fs laser for isotope enrichment. Received: 28 September 2001 / Accepted: 4 February 2002 / Published online: 3 June 2002 RID="*" ID="*"Corresponding author. Fax: +91-4114/480-065, E-mail: mj@igcar.ernet.in     

Characterization of defect type and dislocation density in double oxide heteroepitaxial CeO2/YSZ/Si(001) films

In order to qualitatively and quantitatively analyze the structural defects including the defect types and their concentrations in oxide heteroepitaxial films, a new X-ray rocking-curve width-fitting method was used in the case of doubleCeO₂/YSZ/Si (YSZ=yttria-stabilized ZrO₂) films that were prepared by pulsed laser deposition. Two main defect types, angular rotation and oriented curvature, were found in both CeO₂ and YSZ. Dislocation densities of CeO₂ and YSZ, which were obtained from the angular rotations, are functions of the YSZ thickness. A distinct two-step correlation between dislocation densities of CeO₂ and YSZ was found that as the dislocation density of YSZ is higher than 2.4×10¹¹ cm^-2, the dislocation density of CeO₂ shows a high sensitivity with that of YSZ compared with the low relativity in lower dislocation density (<2.4×10¹¹ cm^-2). In addition, YSZ always has higher dislocation densities and oriented curvatures than CeO₂ in each specimen, which can be attributed to the smaller mosaic domain sizes in YSZ than in CeO₂ as observed by high-resolution transmission electron microscopy. Received: 12 August 2002 / Accepted: 14 August 2002 / Published online: 4 December 2002 RID="*" ID="*"Corresponding author. Fax: +81-3/5734-3369, E-mail: chun_hua_chen@hotmail.com     

Photoacoustic gas sensing employing fundamental and frequency-doubled radiation of a continuously tunable high-pressure CO2 laser

We present the first photoacoustic spectrometer for gas sensing employing both the fundamental and the frequency-doubled radiation of a continuously tunable high-pressure CO₂ laser with room temperature operation. A quasi-phase-matched diffusion-bonded GaAs crystal is used in the system for second-harmonic generation. A pulsed photoacoustic detection scheme with a non-resonant cell, equipped with an 80-microphone array, is employed. The wide continuous tuning range in the fundamental (9.2–10.7 μm) and the frequency-doubled (4.6–5.35 μm) regimes, together with the narrow linewidth of 540 MHz (0.018 cm^-1) for the 10-μm region and of 1050 MHz (0.0315 cm^-1) for the 5-μm region, allow the measurement of gas mixtures, individual species and isotope discrimination. This is illustrated with measurements on NO and CO₂. The measured isotope ratio ¹⁵ NO/¹⁴ NO=(3.58±0.55)×10^-3 agrees well with the literature (3.700×10^-3) and demonstrates the good selectivity of the system. Received: 30 April 2002 / Revised version: 10 June 2002 / Published online: 2 September 2002 RID="*" ID="*"Corresponding author. Fax: +41-1/633-1077, E-mail: sigrist@iqe.phys.ethz.ch     

Exciton dispersion in silicon nanostructures formed by intense,ultra-fast electronic excitation

The intense, ultra-fast electronic excitation of clean silicon (100)–(2×1) surfaces leads to the formation of silicon nanostructures embedded in silicon, which photoluminesce in the yellow-green (∼2-eV band gap). The silicon surfaces were irradiated with slow, highly charged ions (e.g. Xe⁴⁴⁺ and Au⁵³⁺) to produce the ultra-fast electronic excitation. The observation of excitonic features in the luminescence from these nanostructures has recently been reported. In this paper we report the dispersion of the excitonic features with laser excitation energy. A phonon-scattering process is proposed to explain the observed dispersion. Received: 2 October 2001 / Accepted: 18 July 2002 / Published online: 25 October 2002 RID="*" ID="*"Corresponding author. Fax: +1-925/423-7040, E-mail: Hamza1@llnl.gov RID="**" ID="**"Present address: University of California, Lawrence Berkeley National Laboratory, Berkeley, CA 94 720, USA     

Off-axis continuous-wave cavity-enhanced absorption spectroscopy of narrow-band and broadband absorbers using red diode lasers

We present an application of continuous-wave (cw) cavity-enhanced absorption spectroscopy (CEAS) with off-axis alignment geometry of the cavity and with time integration of the cavity output intensity for detection of narrow-band and broadband absorbers using single-mode red diode lasers at λ=687.1 nm and λ=662 nm, respectively. Off-axis cw CEAS was applied to kinetic studies of the nitrate radical using a broadband absorption line at λ=662 nm. A rate constant for the reaction between the nitrate radical and E-but-2-eneof (3.78±0.17)×10^-13 cm³ molecule^-1 s^-1 was measured using a discharge-flow system. A nitrate-radical noise-equivalent (1σ≡ root-mean-square variation of the signal) detection sensitivity of 5.5×10⁹ molecule cm^-3 was achieved in a flow tube with a diameter of 4 cm and for a mirror reflectivity of ∼99.9% and a lock-in amplifier time constant of 3 s. In this case, a noise-equivalent fractional absorption per one optical pass of 1.6×10^-6 was demonstrated at a detection bandwidth of 1 Hz. A wavelength-modulation technique (modulation frequency of 10 kHz) in conjunction with off-axis cw CEAS has also been used for recording 1f- and 2f-harmonic spectra of the ^RR(15) absorption of the b¹Σ_g ⁺-X³Σ_g ^- (1,0) band of molecular oxygen at =14553.947 cm^-1. Noise-equivalent fractional absorptions per one optical pass of 1.35×10^-5, 6.9×10^-7 and 1.9×10^-6 were obtained for direct detection of the time-integrated cavity output intensity, 1f- and 2f-harmonic detection, respectively, with a mirror reflectivity of ∼99.8%, a cavity length of 0.22 m and a detection bandwidth of 1 Hz. Received: 24 June 2002 / Revised version: 12 August 2002 / Published online: 15 November 2002 RID="*" ID="*"Corresponding author. Fax: +44-1865/275410, E-mail: vlk@physchem.ox.ac.uk