Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640×512 focal plane array

In this paper we focused on the mask technology of inductively coupled plasma(ICP) etching for the mesa fabrication of infrared focal plane arrays(FPA).By using the SiO_2 mask,the mesa has higher graphics transfer accuracy and creates less micro-ripples in sidewalls.Comparing the IV characterization of detectors by using two different masks,the detector using the SiO_2 hard mask has the R_0A of 9.7×10~6 Ω·cm~2,while the detector using the photoresist mask has the R_0A of3.2 × 10~2 Ω·cm~2 in 77 K.After that we focused on the method of removing the remaining SiO_2 after mesa etching.The dry ICP etching and chemical buffer oxide etcher(BOE) based on HF and NH4 F are used in this part.Detectors using BOE only have closer R_0A to that using the combining method,but it leads to gaps on mesas because of the corrosion on AlSb layer by BOE.We finally choose the combining method and fabricated the 640×512 FPA.The FPA with cutoff wavelength of 4.8 μm has the average R_0A of 6.13 × 10~9 Ω·cm~2 and the average detectivity of 4.51 × 10~9 cm·Hz~(1/2).W~(-1)at 77 K.The FPA has good uniformity with the bad dots rate of 1.21%and the noise equivalent temperature difference(NEDT) of 22.9 mK operating at 77 K.     

Experimental observation of a copious yield of electrons with small transverse momenta in pp collisions at high energies

Inclusive electron and positron emission have been observed for θ_cm = 30° and S = 2800 GeV² at the CERN Intersecting Storage Rings (ISR). Over the transverse momentum interval 0.2 GeV/c < p_T < 1.5 GeV/c, electrons and positrons, which are equal in number within the experimental accuracies, appear to grow with respect to other particles (pions) approximately like 1/p_T. We are unable to explain their number and p_T-dependence in terms of “conventional” mechanisms.     

A search for quarks at the CERN intersecting storage rings

No quark candidates have been seen among 0.6 × 10⁹ charged particles at the ISR. The corresponding cross-section limit for charge for quark masses up to 22(13) GeV, assuming P_T = 0.4 GeV/c.     

Absorption cross sections for antiprotons on carbon, aluminum and copper at 485 and 597 MeV/c

Absorption cross sections for antiprotons on C, Al and Cu have been measured by a transmission method at 485 and 597 MeV/c. Nuclei are shown to be black to antiprotons at these momenta. Using the available data up to 280 GeV/c, the momentum dependence of the absorption cross sections is investigated. Empirically, a simple expression σ_abs = γ(p/p₀)^−β, with β and γ constants and p₀ = 1 GeV/c, gives a good account of the data in a remarkably wide momentum range, 0.5–280 GeV/c.     

二维圆盘颗粒体系声学行为的数值研究

数值测量了卸载过程中二维单分散圆盘颗粒系统的横波、纵波声速、声衰减系数、非线性系数随压强的变化以及声衰减系数随频率的变化.结果表明,二维(2D)圆盘颗粒体系的横波、纵波声速均随压强呈分段幂律标度:当压强P10~(-4)时,横波、纵波声速随压强的增大而减小;当P10~(-4)时,有v_t~P~(0.202),v_l~P~(0.338).进一步得到其剪切模量和体积模量的比值G/B也随压强呈幂律标度,G/B~P~(-0.502),暗示在低压强下,与三维(3D)球形颗粒体系类似,2D圆盘颗粒体系也处于L玻璃态.水平激励和垂直激励下2D圆盘颗粒系统的衰减系数随频率变化也呈现分段行为:当频率f0.05时,衰减系数不随f变化;当f0.05时,横波纵波的衰减系数α~f;当f0.35时,横波衰减系数α_T~f~2,纵波衰减系数α_L~f~(1.5).此外,竖直水平激励下的2D圆盘颗粒系统的非线性系数和衰减系数随压强也呈现与声速类似的分段规律:当P10~(-4)时,横波非线性系数β_T~P~(-0.230),其余都不随压强变化.当P10~(-4)时,两者均随压强增大呈幂律减小:β_T~P~(-0.703),β_L~P~(-0.684),α_T~P~(-0.099),α_L~P~(-0.105).进而得到2D圆盘颗粒系统中散射相关的特征长度?~*随压强呈幂律标度,当P10~(-4)时,?~*~P~(-0.595);当P10~(-4)时,?~*~P~(0.236).     

Measurements of high pT light fragments at CM 90° in 800 A MEV C + C collisions

The spectra of high-p_T fragments have been measured at CM 90° in 800 A MeV C + C collisions for p_T up to 1.8 GeV/c (proton), 2.5 GeV/c (deuteron) and 2.8 GeV/c (triton) at the Bevalac. Invariant cross sections were measured down to eight orders of magnitude lower than those for production of low momentum protons. The proton spectrum shows a significant deviation from the Boltzmann shape in the high-energy region. The spectra of deuterons and tritons are explained well by, respectively, squaring and cubing the observed proton spectra.     

正三角型三芯光纤中等腰对称平面波的调制不稳定性分析

详细分析了正三角型三芯光纤中等腰对称平面波的调制不稳定性.等腰对称平面波即两芯中场完全相同,第三芯中场入射功率与其他两芯中不同的平面波,其存在的前提是入射光总功率(P)必须大于某最小值(P_(min)),该最小值取决于光纤的线性耦合系数和非线性系数.对一给定的总功率P≥P_(min),令一芯中的入射功率为P_1,其他两芯中入射功率均为P_2,有两种形式的场分布:一种是P_1始终大于P_2,随着P的增加,P_1越来越大,P_2越来越小,依线性稳定性分析方法,该场分布对应的增益谱主要特征与双芯光纤非对称平面波的增益谱相似;另一种是随着P的增加,P_1越来越小,P_2越来越大,使用同样的分析方法,发现该场分布下增益谱与双芯光纤非对称平面波增益谱截然不同,其显著特征是无扰动下,在正常和反常色散区域均可产生不稳定性增益,且在正常色散区域,零扰动频率对应的增益最强;另一方面,耦合系数色散对增益谱的影响在正常和反常色散区域都非常弱,这与其在双芯光纤中的影响截然不同.该结果对基于多芯光纤的模分复用系统非线性效应的研究具有一定的指导意义.     

Monte Carlo optimisation of correlated wave functions for normal two-electron systems

A simple, new type of correlated wave function is proposed for the studies of normal two-electron atomic systems: ψ(r₁, r₂) = Σc_mΦ_m(r₁, r₂) with Φ_m(r₁, r₂) = exp[−(r₁ + r₂)]/(br₁₂ + a)^m, where , a, b are non-linear variational parameters. A notable feature of this basis function is that only three terms are required within the framework of the Raleigh-Ritz variational principle to obtain fairly accurate energy eigenvalues and satisfactory cusp conditions. The non-linear variational parameters are optimised by using the Monte Carlo technique.     

Electrons and holes in undoped Nd2CuO4

Nd₂CuO_4±δ is the non-superconducting prototype of the Re_2−xM_xCuO₄t−y family (Re=Pr, Nd, Sm and M=Ceor Th) of n-type oxide superconductors. Four-probe DC conductivity, EMF in P(O₂) gradient, and thermopower measurements have been used to characterise its electric transport and defect structure between 300 and 900°C and between 5×10⁻⁴ and 1 atm oxygen partial pressure.

The results show that Nd₂CuO_4±δ can be oxygen under-stoichiometric (with n-type conductivity), near-stoichiometric, and over-stoichiometric (with p-type conductivity) in different T, P(O₂) ranges.     

新型热中子敏感微通道板探测效率的蒙特-卡罗模拟研究

基于microchannel plates (MCP)的中子探测技术近年来发展迅速, 因其具有较高的空间分辨率和中子探测效率以及优异的时间分辨能力, 可用于高分辨率中子照相和能量选择中子成像. 本文利用蒙特-卡罗(MC)程序, 对栅格为15 μm的热中子敏感MCP板进行MC模拟计算, 获得了不同几何结构和材料组成情况下, 掺杂型和镀膜型热中子敏感MCP板的探测效率. 计算结果表明, 增加中子敏感材料的比例可以获得更高的中子阻挡效率, 但同时也加大了次级粒子发射进入MCP板通道的难度, 掺杂型MCP 板的通道直径和镀膜型MCP板的镀膜厚度均存在最优值. MCP板厚度为0.4 mm时, 对¹⁰B₂O₃材料, 掺杂型MCP板的热中子探测效率可以超过40%, 镀膜型MCP板的热中子探测效率可以接近60%.     

准周期层状铁磁超晶格的实空间重整化群方法

本文用实空间重整化群方法讨论了准周期层状铁磁超晶格的磁自旋波,用Reduce语言推导了decimation变换公式,从而求得了局域格林函数、局域态密度和约化磁矩。发现局域态密度的带宽和约化磁矩与最近邻相互作用J₁、J₂及格点自旋s_a、s_b密切相关。     

热质双扩散与流固共轭传热及吸附的LBM模拟

采用格子Boltzmann方法,基于孔隙尺度,对填有均匀介质的复合方腔顶盖驱动双扩散混合对流及流固共轭传热、吸附进行数值模拟.在孔隙率ε=0.79,普朗特数Pr=0.7,格拉晓夫数Gr=10⁴和路易斯数Le=1.0时,就不同浮升力比（-100≤Br≤100）和吸附率常数（0.001≤k₁≤0.005）对方腔内部热质传输的影响进行比较.给出流线、等温线、等浓度线、平均努赛尔数Nu_av、舍伍德数Sh_av和吸附量等.结果表明Br通过改变介质所处流场的浓度分布影响吸附,而k₁的增加显著地提高吸附效率和吸附能力.     

P213 BN: a novel large-cell boron nitride polymorph

A new boron nitride polymorph, P2₁3 BN (space group: P2₁3), is investigated by first-principles calculations, including its structural properties, stability, elastic properties, anisotropy and electronic properties. It is found that the new boron nitride polymorph P2₁3 BN is mechanically, dynamically and thermodynamically stable. The bulk modulus (B), shear modulus (G) and Young's modulus of P2₁3 BN are 91 GPa, 41 GPa and 107 GPa, respectively, all of which are larger than that of Y carbon and TY carbon. By comparing with c-BN, the Young's modulus, shear modulus and Poisson's ratio of P2₁3 BN show tiny anisotropy in the (001), (010), (100) and (111) planes. At the same time, in contrast with most boron nitride polymorphs, P2₁3 BN is a semiconductor material with a smaller band gap of 1.826 eV. The Debye temperature and the anisotropic sound velocities of P2₁3 BN are also investigated in this work.     

Electrostatic stiffness properties of charged bilayers

We calculate the exact stiffness constants χ, , c₀ of mean, Gaussian, and spontaneous curvature for a double layer of surface charges separated by a fixed distance 2d in an electrolyte with finite screening length l₀. This extends earlier studies of the limits of very small and very large d/l_D.     

Entropy of planar random surfaces on the lattice

We study planar random surfaces on a hypercubic lattice in two and three dimensions by Monte Carlo techniques. Our data are consistent with the formula n₀(A;C) A^b₀A, where n₀(A;C) is the number of planar random surfaces with area A and boundary C. We find b₀ = −1.4 ± 0.2, = 5.31 ± 0.03 (for d = 2) and b₀ = −1.5 ± 0.2, = 7.13 ± 0.05 (for d = 3). The values of b₀ disagree with those obtained from the Polyakov string model.     

Bounds for multiparticle distributions in minijet events from semi-hard QCD

It is shown that, as a consequence of the centrality of the semi-hard amplitude, it is possible to obtain an upper and a lower bound for the ratio n_SH/n of the minijet average multiplicity over the inelastic average multiplicity and an upper bound for the ratio C_{2 SH}/C₂ of the corresponding normalized second moments of the particle distributions. In minijet events multiplicities are higher and the KNO distributions are narrower.     

First-principles calculations of thermodynamic properties of TiB2 at high pressure

The equations of state (EOS) and other thermodynamic properties of TiB₂ are investigated using ab initio plane-wave pseudopotential density functional theory method. The obtained results are in good agreement with the experimental measured data and other theoretical calculated ones. Through the quasi-harmonic Debye model, in which the phononic effects are considered, the dependences of relative volume V/V₀ on pressure P, cell volume V on temperature T, and Debye temperature Θ and specific heat C_V on pressure P are successfully obtained.     

Computer modeling of carrier transport in PbSnSe photodiodes

A numerical technique has been used to solve the carrier transport equations for n⁺−p Pb_0.935Sn_0.065Se photodiode configuration. The model computes the spatial distribution of the electric field, electron and hole concentrations and the generation-recombination mechanisms. Also the effect of doping profiles on the photodiode parameters (R₀A product, quantum efficiency) is analysed. Results of calculations indicate the potential possibilities of constructing higher quality PbSnSe photodiodes. The R₀A product of experimentally measured PbSnSe photodiodes is controlled by Shockley-Read generation-recombination mechanisms.     

Crosstalk between two-photon and two-color (two-photon) excitation in optical beam induced current generation with two confocal excitation beams

We analyze the influence of residual two-photon excitation (2PE) in two-color (two-photon) optical beam induced current (2CE-OBIC) generation in wide band gap semiconductor samples. 2CE-OBIC generation is accomplished with two confocal excitation beams of separation angle θ and wavelengths λ₁ and λ₂ where , λ_e = hc/E_b, h is the Planck’s constant, c is speed of light in vacuum, and E_b is the energy band gap. Because the conduction band of the sample is a continuum, at least one excitation beam would also contribute an undesirable 2PE-OBIC signal that degrades the signal-to-noise ratio of the measured 2CE-OBIC response and broadens the effective OBIC distribution in the sample particularly when θ ≠ 0 or π. We show that the deleterious effects of crosstalk are reduced by a careful selection of λ₁ and λ₂ and the relative excitation beam intensities. λ₁ and λ₂ should be chosen to minimize the ratio of the two-photon absorption coefficients (β₁, β₂) to the 2CE absorption coefficient β₁₂ or at least satisfy the constraint: β₁ + β₂  β₁₂. Keeping the two excitation intensities equal is beneficial only when β₁ = β₂. Otherwise, it is advantageous to bias the intensity ratio towards the wavelength with a lower 2PE absorption coefficient.