Study on the current bistability and hysteresis in resonant-tunneling structures

We present a time-dependent quantum-kinetic study for the non-equilibrium electron transport properties of double-barrier resonant-tunneling devices. The approach is based on a self-consistent solution of Wigner equation and Poisson equation. We find intrinsic current fluctuations around the current turning point. These instabilities lead to three current irreversible regions, two current hystereses and one small inverse current change in the valley position of current, for the forward and backward bias sweep. The bias step applied on the device affects the width of each current irreversible regions and the current peak height of the middle region.     

High-frequency response and the possibility of detecting the quantum amplification mode in resonant-tunneling diode structures

The conditions of the implementation of the quantum mode of microwave generation in semiconductor resonant-tunneling diode (RTD) structures were theoretically analyzed. Based on the constructed analytical model of the steady-state current and high-frequency response in symmetric RTD structures with finite barrier widths, high-frequency properties of RTDs in an external ac electric field were analyzed by numerical simulation methods. It was shown that the quantum amplification mode can appear not only in the high-frequency region of the terahertz range, but also at relatively low frequencies due to deformation of frequency dependences in a dc electric field.     

Theoretical study of resonant-tunneling and confining phenomena with mass variation in unsymmetrical rectangular double-barrier structures

Analytical expressions for the transmission coefficient and the resonance condition in unsymmetrical rectangular double-barrier structures are derived theoretically by taking into account the mass difference between well and barrier layers. It is found that resonant tunneling with a transmission peak equal to 1 (unity resonance) and resonant tunneling with a transmission peak less than 1 (below unity resonance) may occur in the unsymmetrical double-barrier structures. Two independent conditions are required for unity-resonant transmission: One is the Phase-Difference Condition for Resonance (PDCR) and the other is the Maximum Condition for the Peak Value (MCPV). The below-unity resonant transmission occurs when only condition PDCR holds. It is believed that the two conditions are useful for calculating values of the transmission coefficient and the resonance energy for the unsymmetrical double-barrier structures. They may be useful for resonant tunneling-device fabrication. Furthermore, wave functions of an electron at resonance level are calculated and the confining phenomenon is confirmed.