First-principles study of diffusion behaviour of point defects in the O-terminated (0001) surface in wurtzite ZnO

A detailed first-principles study of the diffusion behaviour of point defects in the O-terminated (0001) surface in wurtzite ZnO was performed. The O vacancy and interstitial are found to diffuse much more easily in surface than in bulk. The Zn vacancy has a similar migration barrier for both bulk and surface, but has much smaller barrier for the diffuse-in process. The Zn interstitial is difficult to diffuse in the surface directly, but it can diffuse into the bulk relatively easily. Specific values of corresponding migration barriers are obtained.     

XPS and UPS study of oxygen adsorption on Re(0001) at low temperatures

Oxygen adsorption was studied in the temperature range 50–300 K. Three adsorbed states were found: (i) an atomic state existing in the whole temperature range, (ii) a molecular state (physisorbed oxygen molecule) between 50 and 80 K, (iii) a peroxide state whose bond order between the two oxygen atoms is around one and which exists between 80 and 300 K.     

Adsorption and diffusion of H2O molecule on the Be(0001) surface: A density-functional theory study

Using first-principles calculations, we systematically study the adsorption behavior of a single molecular H₂O on the Be(0001) surface. We find that the favored molecular adsorption site is the top site with an adsorption energy of about 0.3 eV, together with the detailed electronic structure analysis, suggesting a weak binding strength of the H₂O/Be(0001) surface. The adsorption interaction is mainly contributed by the overlapping between the s and pz states of the top-layer Be atom and the molecular orbitals 1b₁ and 3a₁ of H₂O. The activation energy for H₂O diffusion on the surface is about 0.3 eV. Meanwhile, our study indicates that no dissociation state exists for the H₂O/Be(0001) surface.     

Formation of graphene on Ru（0001） surface

We report on the formation of a graphene monolayer on a Ru(0001) surface by annealing the Ru(0001) crystal. The samples are characterized by scanning tunnelling microscopy (STM) and Auger electron spectroscopy (AES). STM images show that the Moir\'{e} pattern is caused by the graphene layer mismatched with the underlying Ru(0001) surface and has an $N\times N$ superlattice. It is further found that the graphene monolayer on a Ru(0001) surface is very stable at high temperatures. Our results provide a simple and convenient method to produce a graphene monolayer on the Ru(0001) surface, which is used as a template for fabricating functional nanostructures needed in future nano devices and catalysis.     

Thermal stability of corrugated epitaxial graphene grown on Re(0001)

We report on a novel approach to determine the relationship between the corrugation and the thermal stability of epitaxial graphene grown on a strongly interacting substrate. According to our density functional theory calculations, the C single layer grown on Re(0001) is strongly corrugated, with a buckling of 1.6 ?, yielding a simulated C 1s core level spectrum which is in excellent agreement with the experimental one. We found that corrugation is closely knit with the thermal stability of the C network: C-C bond breaking is favored in the strongly buckled regions of the moiré cell, though it requires the presence of diffusing graphene layer vacancies.     

LEED-AES study of the temperature dependent oxidation of the cobalt (0001) surface

Exposure to oxygen of a high defect density Co(0001) surface at or above room temperature but below ～700°C shows an initial temperature independent chemisorption phase followed by temperature dependent absorption of oxygen into the bulk. CoO is formed at the surface only below about 150°C since the oxygen concentration required for CoO formation is not achieved at the surface below that temperature under current exposure conditions due to the rapid diffusion of oxygen into the bulk cobalt. Exposure above ～700°C results in no distinct chemisorbed phase and direct diffusion of oxygen into the bulk.     

Multilayer relaxation of the Mg(0001) surface

We have Investigated the interplanar relaxation of the clean (0001)-(1 × 1) surface of magnesium at 100 K using a dynamical LEED I-V analysis. In contrast to almost all other metal surfaces, an expansion has been observed for the first interlayer spacing of this clean surface. Using an extended database, the results indicate that the first three interlayer spacings are relaxed from the bulk value by Δd₁₂ = +1.9 ± 0.3%, Δd₂₃ = +0.8 ± 0.4%, and Δd₃₄ = −0.4 ± 0.5%. A comparison of this observed multi relaxation with experimental and theoretical results for similar free-electron closepacked metal surfaces, e.g. Al(111), suggests that a surface expansion is a normal property of high electron density simple metals.     

Atomic structure of the scandium (0001) surface

The atomic structure of the scandium (0001) surface has been determined through a lowenergy-electron-diffraction analysis. Intensity profiles calculated on the basis of different structural models corresponding to different terminations of the bulk structure were compared to the experimental data. The comparison showed that the surface of scandium terminated in hep stacking and that the outermost layer spacing is 2.59 ± 0.02 Å corresponding to a ～2% contraction with respect to the bulk spacing (2.64 Å).     

Vibrational properties of the graphite (0001) surface

The temperature dependence of low-energy electron diffraction intensity-energy spectra from the graphite (0001) surface has been measured from 100 to 600 K. The perpendicular and parallel effective surface Debye temperatures and the effective mean-square vibration amplitudes as a function of electron energy have been determined from these data. The values show surface enhancement and approach the bulk values with increasing electron energy. At energies below ≈ 100 eV, however, there is little anisotropy observed between the effective Debye temperatures parallel and perpendicular to the graphite surface.     

Electron-phonon interaction at the Be(0001) surface

We present a first principle study of the electron-phonon (e-p) interaction at the Be(0001) surface. The real and imaginary parts of the e-p self-energy (Sigma) are calculated for the Gamma; surface state in the binding energy range from the Gamma; point to the Fermi level. Our calculation shows an overall good agreement with several photoemission data measured at high and low temperatures. Additionally, we show that the energy derivative of Re Sigma presents a strong temperature and energy variation close to E(F), making it difficult to measure its value just at E(F).     

Initial oxidation of the Mg(0001) surface,an electron spectroscopy study

The initial oxidation of Mg(0001) has been studied using AES (Auger electron spectroscopy), LEED (low energy electron diffraction), and EELS (electron energy loss spectroscopy). The oxidation proceeds through different stages; first oxygen atoms are incorporated to chemisorption sites below the top layer magnesium. This chemisorption phase is followed by the formation of an oxide layer. The oxide layer covers the Mg surface after an oxygen exposure of ～ 10 L O₂. After this exposure the bulk-like MgO formation slowly increases the oxide thickness. The oxide layer formed for exposures up to ≤ 10 L O₂ gives rise to a diffuse LEED pattern of the same symmetry as the original “clean” LEED pattern; the possibility of an epitaxial oxide formation at this stage is discussed.     

GaN(0001)表面的电子结构研究

报道了纤锌矿WZ(wurtzite)GaN(0001)表面的电子结构研究.采用全势线性缀加平面波方法计算得到了GaN分波态密度,与以前实验结果一致.讨论了Ga3d对GaN电子结构的影响.利用同步辐射角分辨光电子能谱技术研究了价带电子结构.通过改变光子能量的垂直出射谱勾画沿ΓA方向的体能带结构,与计算得到的能带结构符合得较好.根据沿ΓK和ΓM方向的非垂直出射谱,确定了两个表面态的能带色散 关键词： GaN 角分辨光电发射 全势线性缀加平面波 电子结构     

Comparative study of adsorption characteristics of Cs on the GaN （0001） and GaN （0001） surfaces

The adsorption characteristics of Cs on GaN （0001） and GaN （0001） surfaces with a coverage from 1/4 to 1 monolayer have been investigated using the density functional theory with a plane-wave uttrasoft pseudopotential method based on first-principles calculations. The results show that the most stable position of the Cs adatom on the GaN （0001） surface is at the N-bridge site for 1/4 monolayer coverage. As the coverage of Cs atoms at the N-bridge site is increased, the adsorption energy reduces. As the Cs atoms achieve saturation, the adsorption is no longer stable when the coverage is 3/4 monolayer. The work function achieves its minimum value when the Cs adatom coverage is 2/4 monolayer, and then rises with Cs atomic coverage. The most stable position of Cs adatoms on the GaN （000i） surface is at H3 site for 1/4 monolayer coverage. As the Cs atomic coverage at H3 site is increased, the adsorption energy reduces, and the adsorption is still stable when the Cs adatom coverage is 1 monolayer. The work function reduces persistently, and does not rise with the increase of Cs coverage.