一种工业CT测量精度评估方法

为了验证工业CT系统对检测件的测量精度,设计了一套评估方法,针对由国家X射线数字化成像仪器中心自主研发的9 MeV 高能工业CT系统和450 kV工业CT系统,设计制作了标准测量试块,以三坐标测量机为辅助测量手段,对CT图像的线性尺寸、球面尺寸、角度尺寸、孔径尺寸和定位尺寸等进行对比测量,得到不同尺寸类型的测量误差。在不考虑尺寸类型的影响下,分别对铝、不锈钢和尼龙三种材料做了CT测量误差对比,结果表明,对于这三种材料来说,材料密度越大测量精度越高。实验结果表明,可验证工业CT系统对不同类型尺寸测量的精度,工业CT系统可完成精度较高的尺寸测量工作,特别对复杂结构的内部尺寸测量有一定的优势。     

晶粒尺寸对Ba0.70Sr0.30TiO3陶瓷介电性能的影响规律及机理研究

通过制备晶粒尺寸处于0.1-10 μm之间的致密Ba0.70Sr0.30TiO3陶瓷,系统研究了晶粒尺寸对居里温度TC、铁电相介电常数εF、峰值介电常数εM的影响规律,并深入分析了其内在的影响机理.研究表明:晶粒尺寸减小时,TC刚开始基本不变,直到晶粒尺寸小到一定程度时才开始降低,此变化规律可由Buesseum的内应力模型解释;随晶粒尺寸的增加,εF先增加后减小,此变化规律可由Shaikh的串并联模型来解释,主要影响因素有内应力、畴、晶界;εM随晶粒尺寸的增加,在晶粒尺寸较小时先增加后减小,晶粒尺寸较大时略有增加,此变化规律可由弥散相变理论和串并联模型共同解释,在晶粒尺寸较小时主要影响因素为内应力、微畴和晶界,晶粒尺寸较大时主要影响因素为晶界.     

熔石英表面铜颗粒污染激光诱导损伤

利用SAGA-S激光器输出的355 nm波长激光,研究了熔石英表面铜颗粒污染的激光损伤规律。采用磁控溅射的方式在洁净熔石英表面制备不同尺寸的颗粒状污染物,用1-on-1,10-on-1,20-on-1的方式测试经污染后的熔石英基底的损伤阈值,并采用光学显微镜观察损伤形貌、CCD在线测量损伤斑尺寸。结果表明:污染后的熔石英基底的损伤主要发生在后表面,而且以热烧蚀和热应力为主,基底的损伤阈值与熔石英前表面污染颗粒尺寸呈负指数关系,随后表面污染物颗粒尺寸的增大呈略微下降。前表面颗粒污染物诱导损伤斑尺寸为颗粒污染物尺寸的4倍,后表面颗粒污染物引起的损伤斑尺寸约为颗粒污染物尺寸的2倍。并绘出损伤斑尺寸与颗粒尺寸、辐照方式之间的关系。     

玻璃中CdSSe纳米晶体的光谱性能

对掺有镉、硒、硫的玻璃在650—800℃退火4?h，生长了不同尺寸的CdS0.13Se0.87纳米晶体，测量了纳米晶体的吸收光谱、光致发光（PL）谱和电调制光谱，确定了纳米晶体部分电子态的能量，讨论了CdSSe纳米晶体的光学性质与其尺寸之间的依赖关系.随着纳米晶体尺寸的增大，对应激子的吸收峰、PL峰及电吸收信号发生红移，表现出明显的量子尺寸效应.小尺寸纳米晶体的电吸收表现为量子受限的Stark效应，而大尺寸纳米晶体的电吸收线形与体材料的相似；随着纳米晶体尺寸的增大，电吸收信号增强.所有尺寸的纳米晶体都表现 关键词： CdSSe纳米晶体 吸收光谱 光致发光谱 电光响应     

大尺寸金属氧化物TFT面板设计分析

根据最基本的2T1C像素电路,建立了TFT各参数与AMOLED面板限制因素的计算模型。详细分析了AMOLED显示尺寸与TFT迁移率、金属方块电阻、刷新频率以及器件结构的关系。在大尺寸高分辨率AMOLED面板设计中,信号线RC延迟是主要限制因素。TFT迁移率的提高在一定范围内对大尺寸显示面板设计有利,降低RC延迟是实现大尺寸、高分辨率、高刷新频率显示的关键技术。开发铜布线技术和低寄生电容TFT器件结构是未来大尺寸AMOLED显示的关键技术。     

晶粒尺寸对Ba$lt;sub$gt;0.70$lt;/sub$gt;Sr$lt;sub$gt;0.30$lt;/sub$gt;TiO$lt;sub$gt;3$lt;/sub$gt;陶瓷介电性能的影响规律及机理研究

通过制备晶粒尺寸处于0.1—10 μm之间的致密Ba_0.70Sr_0.30TiO₃陶瓷,系统研究了晶粒尺寸对居里温度T_C、铁电相介电常数ε_F、峰值介电常数ε_M的影响规律,并深入分析了其内在的影响机理.研究表明：晶粒尺寸减小时,T_C刚开始基本不变,直到晶粒尺寸小到一定程度时才开始降低,此变化规律可由Buesseum的内应力模型解释;随晶粒尺寸的增加,ε_F先增加后减小,此变化规律可由Shaikh的串并联模型来解释,主要影响因素有内应力、畴、晶界;ε_M随晶粒尺寸的增加,在晶粒尺寸较小时先增加后减小,晶粒尺寸较大时略有增加,此变化规律可由弥散相变理论和串并联模型共同解释,在晶粒尺寸较小时主要影响因素为内应力、微畴和晶界,晶粒尺寸较大时主要影响因素为晶界. 关键词： 0.70Sr_0.30TiO₃陶瓷')" href="#">Ba_0.70Sr_0.30TiO₃陶瓷 介电常数 居里温度 晶粒尺寸     

三维漏斗中颗粒流量及其相关因素研究

用三维沙漏实验研究了改变颗粒尺寸、漏斗开口尺寸和倾角条件下,漏斗中颗粒流量变化.应用Matlab软件拟合出流量与漏斗倾角以及颗粒尺寸的关系,并对实验现象给出了定性分析.     

不同含水率下木材尺寸变化的近红外光谱研究

木材和水分关系的研究一直以来都是木材学研究领域的重点课题。木材中水分含量变化会使木材产生干缩湿胀,进而影响其尺寸稳定性,这关系到木材的实际应用。一般认为,木材产生变形的根本原因是木材化学组分中多糖类物质所含羟基与水分形成氢键作用的结果,而近红外光谱对有机材料含氢基团具有高度的敏感性。利用这一特点,为了能够实现对木材尺寸变化的在线快速检测,应用近红外光谱(near infrared,NIR)探讨了不同含水率木材与其尺寸稳定性之间的相互关系并建立了木材尺寸变化预测模型。通过对不同含水率下木材三个切面进行近红外扫描得到光谱信息,结合化学计量学方法,建立基于偏最小二乘法的木材径、弦向尺寸变化率的近红外光谱模型,并采用交叉检验的方式对模型进行验证。结果表明：不同含水率条件下的木材径、弦向尺寸变化率与相应的近红外光谱有很高的相关性,说明可以通过近红外光谱来研究木材的尺寸变化;研究建立的木材径、弦向尺寸变化模型的相关系数都大于0.90,均具有比较好的适用性;通过比较横切面上建立的径、弦向尺寸变化率模型,弦向好于径向。以上结果表明利用近红外光谱技术对木材的尺寸变化进行快速、准确的预测具有较好的可行性。     

基于比较算法和单纯形法的电子枪快速设计方法

 采用比较算法快速寻找数据库中与目标导流系数相匹配的电子枪尺寸,采用缩尺法改变其尺寸到所要求的目标尺寸。考虑电子枪尺寸对注腰半径、导流系数、层流性等参数的影响,建立了评价电子注性能的目标函数,采用单纯形法优化目标函数实现最优的电子层流性,且基于比较算法和单纯形算法的设计方法具有通用性,工作效率高。     

气体密度对瑞利散射法测量团簇尺寸影响的初步分析

 瑞利散射法被广泛地应用于测量团簇尺寸,通常视散射信号的强弱只正比于团簇的大小。从理论推导得到瑞利散射信号并不仅仅是团簇尺寸的函数,而与团簇尺寸、气体密度和结合率均有关系,认为采用瑞利散射法测量团簇尺寸应考虑气体密度对测量结果的影响。并用该分析方法研究了氩团簇沿喷嘴轴线的尺寸分布情况：团簇尺寸沿喷嘴轴线并不是单纯的单调变化,而是在某个位置达到最大值,并且这个位置与背景压强等因素有关。     

Spectral methods for estimating the state of winter RYE sowings

We present the results of comprehensive investigations that include remote spectral measurements under field conditions, laboratory experiments, and mathematical simulation of the radiative regime of winter rye sowings. B. I. Stepanov Institute of Physics, Academy of Sciences of Belarus, 68, F. Skorina Ave., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 5, pp. 646–650, September–October, 1997.     

微波消解-ICP-OES,AAS和AFS测定大蒜不同部位20种元素含量

将大蒜植株分为根、茎(下)、茎(中)、茎(上)、嫩叶和老叶6个不同部位,采用微波消解方法对各个部位进行了预处理,并用电感耦合等离子体发射光谱法(ICP-OES)、原子吸收光谱法(AAS)和原子荧光光谱法(AFS)测定了其中Al,As,B,Ca,Cd,Cr,Cu,Fe,Hg,K,Mg,Mn,Na,Ni,P,Pb,S,Se,Sr和Zn共20种元素的含量,另外,还测定了从同一处土壤中采收的大蒜头中相应元素的含量.研究结果表明:大蒜植株嫩叶和大蒜头中Cu,Fe,Mn,S,Se,Zn等元素含量较高而As,Cd,Hg,Pb等元素含量较低,是提取大蒜生物活性物质的绝好材料;一些元素在大蒜植株不同部位的含量分布模式能高度反映植物生理特性或环境污染状况.     

Atomic-emission spectrum analysis of soil

A method of the atomic-emission spectrum analysis of soil has been developed for control of the accumulation of technogenic impurities in environmental objects. A sample, after calcination at 550°C, is evaporated in an arc discharge. Spectra are recorded by a DFS-8 spectrograph. Simultaneously, determination is made of Li, Ba, Sr, Cu, Zn, Cr, Ni, Co, Pb, Bi, Mo, V, Ge, Ga, Y, Nb, Sn, Cd. For the majority of the elements the detection limits are lower than their percent abundance in the crust and their maximum permissible concentrations. Institute for Single Crystals, National Academy of Sciences of Ukraine, 60, Lenin Ave., Khar'kov, 310001, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 3, pp. 396–399, May–June, 1997.     

Hardware and software for the automating atomic-absorption spectrometers AAS, S115, and saturn

We describe a modified GELIOS System intended to automate the atomic-absorption spectrometers AAS, S115, SATURN, and Perkin-Elmer 503. Software is prepared in the visual environment of programming DELFI-3 and functions under the control of Windows 95. A distinguishing feature of the GELIOS System is simultaneous search for the peak and area of the absorption signal, correction of the errors of measurements, automatic digital filtration of data, control of the time of operation of hollow-cathode lamps, measurement of spectra and the statistical resource of the service life of hollow-cathode lamps, use of different methods to construct a calibrating graph, the possibility of memorizing the data of the analysis in an archived file, and a formation of the report for printing. The system contains an electrovic data directory on atomicabsorption analysis in five volumes for 67 elements of the Mendeleev system. To whom correspondence should be addressed. “University” Science and Production Center, 4, F. Skorina Ave., Minsk, 220050, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 5, pp. 734–737, September–October, 1999.     

ICP-AES雾化法氢化法联合测定白族产妇及新生儿发中常微量元素

本文报道用ICP-AES同时测定人发中24种元素的方法。采用10mg/ml样品,4.8mol/L盐酸溶液,用基体匹配法校正干扰,分别用雾化法和氢化法测定,用人发标准检验方法和结果的准确性。较满意地测定了Zn等18种元素。91例母婴发中的Zn、Fe、Sr、Mg、Cd、P、Ni、Se、As和Mo等元素呈显著的正相关性。     

Optical properties of pure and doped Y3Fe5O12 single crystals

Institute of Physics of Solids and Semiconductors, Academy of Sciences of Belarus, 17, P. Brovka Str., GSP, Minsk, 220072. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 63, No. 4, pp. 667–675, July–August, 1996.     

Silicon Porosification: State of the Art

This review is devoted to the analysis of the problems related to fabrication of the Si porous layers. The review was motivated by a great interest to Si-based porous materials from nano- to macro-scale for various applications in electronics, optoelectronics, photonics, chemical sensors, biosensors, etc. The peculiarities of the silicon porosification and the principles of preparing porous layers are considered in the present article. Various methods used for Si porosification such as chemical stain etching, chemical vapor etching, laser-induced etching, metal-assisted etching, spark processing and reactive ion (plasma) etching were analyzed. However, the main attention was focused on electrochemical porosification of Si. The review discusses in detail the influence of parameters such as electrolyte composition and pH, current density, etching time, temperature, wafer doping and orientation, lighting, magnetic field, and ultrasonic agitation on the process of Si porosification. It was shown that the structure of porous silicon strongly depends on both technological parameters of electrochemical etching and the parameters of the semiconductor subject to treatment. This review also addresses the main properties of porous silicon, porous multilayer and 3D structure formation, oxidation of porous Si, release of the porous layer, drying, storage, etching, filling and surface functionalizing of porous Si. Features of III-V compound porosification are also briefly analyzed.     

ICP-AES测定铜电解液中的Fe、Ni、Pb、Bi、Sb、Zn和As

利用ICP-AES分析技术,通过对样品处理、元素分析谱线、酸度等因素进行试验研究,综合确定了分析条件,对铜电解液中杂质元素（Fe、Ni、Pb、Bi、Sb、Zn、As）进行了ICP-AES测定。结果表明,ICP-AES测定铜电解液中Fe、Ni、Pb、Bi、Sb、Zn和As,可以满足铜电解生产的需要,为高纯阴极铜的生产起了指导作用。     

The nature of empirical constants in the equation relating the frequency of the stretching vibration of oh-groups to parameters of the [MO n ]-polyhedrons coordinating these groups

Institute of Physicoorganic Chemistry, Academy of Sciences of Belarus, 220603, Minsk, Ul. Surganova, 13, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 62, No. 1, pp. 104–107, January–February, 1995.     

Effect ofγ-radiation on the spectral luminescence characteristics of impure cadmium tungstate crystals

Results of a study of the effect of γ-radiation on the spectral luminescence properties of cadmium tungstate crystals doped with silver, bismuth, and molybdenum cations are presented. Spectral characteristics of the nondnnnoped crystals are briefly described. Absorption and photo and X-ray luminescence spectra of the crystals taken before and after exposure to γ-radiation (5.5·10⁴ Gy) are compared. It is found that the spectral characteristics of the crystals doped with silver, bismuth, and molybdenum cations do not change markedly after the exposure. The relation between the type of impurity-induced defects, individual characteristics of the impurity cations, and the character of the effect of γ-radiation on the spectral luminescence properties of impure crystals is analyzed (preliminarily). Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 1, pp. 55–60, January–February, 1997.