正常金属/铁磁绝缘层/p波超导体结的隧道谱

利用Blonder-Tinkham-Klapwijk理论,计算了正常金属/铁磁绝缘层/p波超导体结的隧道谱.结果表明:(1)在正常金属/铁磁绝缘层/p波超导体结的隧道谱中存在零偏压电导峰、零偏压电导凹陷;(2)在Px波结的隧道谱中,磁散射能导致零偏压电导峰的劈裂,而界面的粗糙散射却可以阻止其劈裂;(3)界面的势垒散射,磁散射及其与粗糙散射的共同作用对px、py波结零偏压电导的影响是不同的.     

正常金属/自旋三重态p波超导体结隧道谱的奇异性

利用Blonder，Tinkham和Klapwijk理论计算了正常金属/绝缘层/正常金属/自旋三重态的p波超导体结的隧道谱和平均电流.计算结果表明：在自旋三重态p波超导结的隧道谱中存在零偏压电导峰、零偏压电导凹陷和双凹陷结构，并有微分电导随偏压震荡的现象出现，在I-V曲线上出现电流台阶.这些结果在理论上支持Sr₂RuO₄的超导态是自旋三重态p波超导态. 关键词： 自旋三重态超导体 p波超导体 隧道谱     

绝缘层方势垒影响下N-I-d波超导体结的隧道谱

以方势垒描述N-I-d波超导体结中绝缘层对准粒子输运的影响,通过求解Bogoliubov-de Gennes(BdG)方程,利用Blonder-Tinkham-Klapwijk(BTK)理论,计算了N-I-d波超导体结的隧道谱.研究表明:(1)绝缘层厚度在不同纳米量级下的隧道谱形状各异,即便其厚度处在同一纳米量级上,彼此间仅相差零点几个纳米,电会导致微分电导随偏压的变化关系迥异,这为解释高Tc氧化物超导体的相关实验现象提供了更多的可能性;(2)粒子的入射角和绝缘层的势垒值对零偏压电导峰有显著影响.     

正常金属/绝缘层/正常金属/f波超导体量子点接触的微分电导（英文）

在Blonder–Tinkham–Klapwijk理论的框架下,计算了正常金属/绝缘层/正常金属(N/I/N)/f波超导体量子点接触的隧道谱.结果表明:在单模情况下,当f22 x-y波超导体的a轴与正常金属/f22 x-y波超导体间的界面夹角α为零度时,零偏压电导随绝缘层到界面的距离(L)变化,这导致了隧道谱中零偏压电导峰的出现或消失;当α=π/4,零偏压附近的电导随绝缘层势垒的增加,从零偏压电导峰逐渐变成了V型结构,能隙内的谱线出现尖谷,并随L的变化发生谷裂.N/I/N/f波超导体量子点接触隧道谱的这些特征与N/I/N/d波和N/I/N/p波超导体量子点接触隧道谱的特征不同,利用这些特征,我们能把f波超导体与d波和p波超导体区别开.     

正常金属/铁磁体/d波超导量子点接触系统中的隧道谱

本文研究了正常金属/铁磁体组成的量子线与d波超导体构成的量子点接触隧道结(N/FM/SC)中的隧道谱.利用推广的Blonder-Tinkham-Klapwijk(BTK)理论模型,求解Bogoliubov-de Gennes方程,计算N/FM/SC量子点接触隧道结中的微分电导.数值计算结果表明:1)中间量子线的长度以及晶轴方向会影响隧道谱的振荡周期;2)散射势垒强度影响隧道谱的峰高,铁磁体磁交换能会使峰位产生偏移.     

绝缘层方势垒影响下N/I/自旋三重态p波超导体结的隧道谱

以方势垒描述正常金属/绝缘层/自旋三重态p波超导结中绝缘层对准粒子输运的影响,通过求解Bogoliubov-de Gennes(BdG)方程,利用Blonder-Tinkham-Klapwijk(BTK)理论,计算了p波超导结的隧道谱.研究表明:(1)绝缘层厚度的增加,可导致自旋三重态p波超导结隧道谱中出现亚能隙共振峰...     

量子线/铁基超导隧道结中隧道谱的研究

考虑铁基超导中能带间的相互作用和界面对每一个能带的散射作用, 利用推广的Blonder-Tinkham-Klapwijk模型, 并通过求解Bogoliubov-de Gennes 方程研究了具有不同类型双能隙系统的量子线/铁基超导隧道结中准粒子的输运系数和隧道谱. 研究表明: 1)在弹道极限时, 随着带间相互作用的增大, s_± 波隧道谱中零偏压附近的平台演变成电导峰; s₊₊ 波的平台演变成凹陷; p波的零偏压电导峰被压低. 2)界面对两个能带的散射作用不为零时, 随着带间相互作用的增大, s_± 波和s₊₊ 波两能隙处的峰值将降低, 而两峰间的凹陷值将变大; p波的零偏压电导峰被压低, 非零偏压电导增大. 3)界面对每个能带的散射, 可使其产生的电导峰变得更加尖锐, 但可压低和抹平另一个带产生的电导峰值. 这些结果对于澄清铁基超导体的能隙结构和区别不同类型铁基超导体有所帮助.     

铁磁绝缘层对正常金属/铁磁绝缘层/正常金属/p波超导结隧道谱的影响

在正常金属/铁磁绝缘层/正常金属/自旋三重态p波超导隧道结中,考虑到铁磁绝缘层的磁散射和粗糙界面散射,运用Bogoliubov-de Gennes(BdG)方程和Blonder-Tinkham-Klapwijk(BTK)理论模型,研究了铁磁绝缘层对隧道结微分电导的影响.研究表明:(1)对于px波,粗糙界面散射和磁散射都能使零偏压电导峰变低,能隙处凹陷升高;随着磁散射的增强,谱线的尖锐峰消失,宽峰逐渐变为凹陷;(2)对于py波,粗糙界面散射和磁散射都能使零能凹陷上移,能隙峰变低,随着粗糙界面散射的增强,两能隙峰间距减小;随着中间正常金属层厚度的增加,能隙内电导随外加偏压呈现振荡行为,能隙外电导仅与普通势垒有关;(3)对于px+ipy波,随着粗糙界面散射的增强,零偏压电导峰被压低,双凹陷处的值逐渐增大为小的能隙峰,而磁散射并不改变谱线中各凹陷处的电导值.     

铁磁超导态/绝缘层/自旋三重态p波超导体结的直流Josephson电流

由Bogoliubov-de Gennes方程得到铁磁超导共存态(FS)的自洽方程，利用推广的Furusaki-Tsukada的电流公式计算了铁磁超导态/绝缘层/自旋三重态p波超导体(FS/I/p)结的直流Josephson电流随结的温度、相位差以及FS中磁交换能、结界面的势垒散射强度的变化关系.研究表明：FS中磁交换能、结界面的势垒散射均抑制FS/I/p结的直流Josephson电流.当自旋三重态超导体具有p_x波配对势时，自旋三重态超导体结的直流Josephson电流随结两侧相位差的振荡周期是π. 关键词： 铁磁超导态 自旋三重态超导体 p波超导体 直流Josephson电流     

Spin-polarized quasiparticle transport in ferromagnet/insulator/p-wave superconductor junction

We have studied the tunneling conductance in ferromagnet/insulator/p-wave superconductor junctions, taking into account the rough interface scattering effect. We find that there exist zero-bias conductance peaks and single-minimum structure in tunneling spectroscopy. As the exchange energy increases, the Andreev reflection is always suppressed and the differential conductance decreases. The differential conductance depends on the barrier strength and the roughness at the interface. Supported by the Natural Science Foundation of Jiangsu Higher Education Institutions, China (Grant No. 06KJB140009)     

Tunneling Conductance in Normal Metal/Insulator/Triplet Superconductor Junction

Tunneling conductance in normal metal/insulator/triplet superconductor junctions is studied theoretically as a function of the bias voltage at zero temperature and finite temperature. The results show there are zero-bias conductance peak, zero-bias conductance dip and double-minimum structures in the spectra for p-wave superconductor junctions. The existence of such structures in the conductance spectrum can be taken as evidence that the pairing symmetry of Sr2RuO4 is p-wave symmetry.     

Tunneling Conductance in Normal Metal/Insulator/Triplet Superconductor Junction

Tunneling conductance in normal metal/insulator/triplet superconductor junctions is studied theoretically as a function of the bias voltage at zero temperature and finite temperature. The results show there are zero-bias conductance peak, zero-bias conductance dip and double-minimum structures in the spectra for p-wave superconductor junctions. The existence of such structures in the conductance spectrum can be taken as evidence that the pairing symmetry of Sr2RuO4 is p-wave symmetry.     

Differential conductance in normal-metal/insulator/metal/d-wave superconductor junction carrying a supercurrent

This paper applies the Bogoliubov--de Gennes equation and the Blonder--Tinkham--Klapwijk approach to study the oscillatory behaviour of differential conductance in a normal metal/insulator/metal/d-wave superconductor junction carrying a supercurrent I_s. We find that (i) a three-humped structure appears at a nearly critical supercurrent I_s and z ≈ 0.5 for the normal metal/insulator/metal/d_x² + y²-wave superconductor junction; (ii) the zero-bias conductance peak splits into two peaks with sufficiently large applied current for the normal metal/insulator/metal/d_xy-wave superconductor junction; (iii) the conductance spectrum exhibits oscillating behaviour with the bias voltage and the peaks of the resonances are suppressed by increasing supercurrent I_s.     

塞曼效应对正常金属/d波超导结中微分电导的影响

通过外加塞曼磁场在d波超导中,研究磁场对d波超导及其正常金属/d波超导结中隧道谱的影响。研究表明(1)塞曼磁场能使能隙变小,且随着磁场变大,超导态会变为正常态,产生一级相变;(2)塞曼磁场可导致零偏压电导峰劈裂,劈裂宽度为2h0(h0为塞曼能)。     

Magnetic gap effect on the tunneling conductance in a topological insulator ferromagnet/superconductor junction

The tunneling conductance on the surface of a topological-insulator-based ferromagnet/superconductor (F/S) structure is studied where S is an s-wave superconductor with superconducting order parameter ∼Δ. The conductance is calculated based on the BTK formalism. The magnetization in F is applied along the z-direction () in order to induce the energy-mass gaps (m) for the Dirac electrons in the F-region. In this work, the influence of energy gap due to the magnetic field in the F-region on the conductance is emphasized. The Fermi energy mismatch between F (EFF=EF) and S (EFS=EF+U), where the gate potential U is applied to the electrode on top of S, is also considered. As a result, a biased voltage V can cause the conductance switch at eV=Δ, depending on the value of the magnetic field. The conductance is found to be linearly dependent on either m or U. The slope of the curve can also be adjusted. This linear behavior in a topological-insulator-based F/S structure may be valuable for electronic applications of the linear-control-current devices. The tunneling conductances of the quasi-Dirac-particle in a topological-insulator-based F/S junction are quite different from those of a graphene-based F/S junction.     

Tunneling conductance in topological insulator ferromagnet/p-wave superconductor junctions

The tunneling conductance in topological insulator (TI) ferromagnet/p-wave superconductor (FM/pS) junction is studied based on the Blonder–Tinkham–Klapwijk (BTK) theory. The Fermi energy mismatch between FM and pS as well as the finite quasiparticle lifetime are considered. Three kinds of pairings p_x, p_y, and p_x+ip_y-waves for pS are chosen. It is found that the spectrum strongly depend on the magnetic gap, the gate potential, the quasiparticle lifetime as well as the type of the pair potential symmetry. The pair potential symmetry drastically affects the formation of the zero-energy bound states dependent on the magneto effect or the Fermi energy mismatch effect. The finite quasiparticle lifetime effect can suppress the Andreev resonant scattering process at eV=Δ₀ and smear the dips in the conductance.