嵌入Ag纳米颗粒层的DNA忆阻器

构建了具有“Al/DNA-CTMAB/Ag NPs/DNA-CTMAB/ITO”结构的有机忆阻器件, 并对其电流-电压 (I-V)曲线进行测量. 结果表明, 嵌入Ag纳米颗粒层, 不仅可以增强器件的导电性, 而且忆阻特性也显著提高. 当颗粒粒径在15–20 nm范围时, 开-关电流比I_ON/I_OFF能够达到10³. 器件的I-V特性受扫描电压幅值V_A的影响, 随着V_A的增大, 高阻态的电流变化较小, 而低阻态的电流明显增大, 开(或关)电压V_SET (V_RESET)和I_ON/I_OFF增加. 实验还发现, 器件高低阻状态的相互转换取决于外加电场的方向, 说明该忆阻器具有极性.     

瞬态光电流对有机薄膜光伏器件中肖特基接触的研究

制备了结构为氧化铟锡(ITO)/有机半导体/金属的有机薄膜光伏器件,电流--电压曲线显示其具有整流特性但有机半导体和电极间肖特基接触的内建电场方向很难判定.为了研究有机半导体和电极的肖特基接触特性,分别制备了结构为ITO/有机绝缘层/有机半导体/金属和ITO/有机半导体/有机绝缘层/金属的器件,通过调制激光照射下器件的瞬态光电流方向可容易判断有机半导体和电极间肖特基接触的内建电场方向,外加偏压下瞬态光电流的强度变化进一步证实了判断的正确性.     

Bathocuproine/Ag复合电极对于聚合物光伏器件效率和稳定性的影响

采用Bathocuproine/Ag (BCP/Ag)复合电极代替Ca/Al复合电极, 制备PTB7:PC71BM 作为光敏层的聚合物光伏器件, 并通过改变BCP薄膜厚度来研究BCP/Ag复合电极对于器件光电转换器和稳定性的影响. 研究发现: 在光敏层和金属电极之间插入BCP修饰层后, 器件性能得到了显著的改善, 在BCP厚度为5 nm时, 器件的效率达到了6.82%, 且略高于Ca/Al复合电极的器件效率; 相比于采用Ca/Al复合电极的器件, BCP/Ag复合电极增大了器件的短路电流和外量子效率, 使器件效率得到提高; 同时器件的稳定性得到了显著的改善, BCP/Ag 复合电极器件的衰减速率几乎和未插入BCP的器件衰减速率相同, 相对于Ca/Al复合电极器件大幅提高.     

点接触金属/Pr$lt;sub$gt;0.7$lt;/sub$gt;Ca$lt;sub$gt;0.3$lt;/sub$gt;MnO$lt;sub$gt;3$lt;/sub$gt;/Pt结构稳定的低电流电阻开关特性

利用自主开发的导电原子力显微镜控制Pt,W探针构成点接触金属/Pr_0.7Ca_0.3MnO₃（PCMO）/Pt三明治结构,对其电流-电压（I-V）及脉冲诱导电阻开关（EPIR）特性进行了研究.研究发现,在10 nA限流下两种电极对应结构的I-V都表现出相当稳定的双极性电阻开关特性,以及大于100的电阻开关比.进一步测试发现,点接触W/PCMO/Pt器件具有在10 nA限流下稳定的EPIR特性以及100 pA限流下重复的双极性电阻开关特性.此电流比已报道的电流低3个数量级,表明此结构在低功耗存储器件方面的潜在应用.通过对比样品不同位置、不同限流、不同接触面积点接触Pt/PCMO/Pt的I-V回滞特性,把点接触器件在低电流下稳定、显著的电阻开关效应归结于小的器件面积导致强的局域电场加强了O离子迁移效应. 关键词： 脉冲诱导电阻开关 电场下氧离子迁移 电阻开关     

点接触金属/Pr0.7Ca0.3MnO3/Pt结构稳定的低电流电阻开关特性

利用自主开发的导电原子力显微镜控制Pt,W探针构成点接触金属/Pr0.7Ca0.3MnO3(PCMO)/Pt三明治结构,对其电流-电压(I-V)及脉冲诱导电阻开关(EPIR)特性进行了研究.研究发现,在10 nA限流下两种电极对应结构的I-V都表现出相当稳定的双极性电阻开关特性,以及大于100的电阻开关比.进一步测试发现,点接触W/PCMO/Pt器件具有在10 nA限流下稳定的EPIR特性以及100 pA限流下重复的双极性电阻开关特性.此电流比已报道的电流低3个数量级,表明此结构在低功耗存储器件方面的潜在应用.通过对比样品不同位置、不同限流、不同接触面积点接触Pt/PCMO/Pt的I-V回滞特性,把点接触器件在低电流下稳定、显著的电阻开关效应归结于小的器件面积导致强的局域电场加强了O离子迁移效应.     

利用亮度波形证明固态阴极射线发光

制备了3种结构的器件：A: ITO/SiO₂/Alq₃/Al, B: ITO/Alq₃/SiO₂/Al,C: ITO/SiO₂/Alq₃/SiO₂/Al。对于器件A和B,在正向偏压(ITO接正极)下才能观察到发光;而对于器件C,在正向和反向偏压下都可以观察到发光。随着电压升高,器件B和C产生的蓝色发光相对绿光逐渐增强。这主要是由于SiO₂中的加速电子碰撞激发Alq₃发光层产生热电子,并与空穴形成电子空穴对,复合产生蓝光;而对于器件A,在反向偏压下被热电子碰撞激发出的空穴与正向偏压下从Al电极进入的电子复合形成激子,产生绿色发光。这些结构的器件发光不但可来源于电子与积累的空穴复合,而且也来自固态阴极射线发光。     

具有部分本征GaN帽层新型AlGaN/GaN高电子迁移率晶体管特性分析

为了优化传统Al GaN/GaN高电子迁移率晶体管(high electron mobility transistors,HEMTs)器件的表面电场,提高击穿电压,本文提出了一种具有部分本征GaN帽层的新型Al GaN/GaN HEMTs器件结构.新型结构通过在Al GaN势垒层顶部、栅电极到漏电极的漂移区之间引入部分本征GaN帽层,由于本征GaN帽层和Al GaN势垒层界面处的极化效应,降低了沟道二维电子气(two dimensional electron gas,2DEG)的浓度,形成了栅边缘低浓度2DEG区域,使得沟道2DEG浓度分区,由均匀分布变为阶梯分布.通过调制沟道2DEG的浓度分布,从而调制了Al GaN/GaN HEMTs器件的表面电场.利用电场调制效应,产生了新的电场峰,且有效降低了栅边缘的高峰电场,Al GaN/GaN HEMTs器件的表面电场分布更加均匀.利用ISE-TCAD软件仿真分析得出:通过设计一定厚度和长度的本征GaN帽层,Al GaN/GaN HEMTs器件的击穿电压从传统结构的427 V提高到新型结构的960 V.由于沟道2DEG浓度减小,沟道电阻增加,使得新型Al GaN/GaN HEMTs器件的最大输出电流减小了9.2%,截止频率几乎保持不变,而最大振荡频率提高了12%.     

透明导电电极对聚合物太阳能电池光学性能的影响北大核心CSCD

采用传输矩阵法研究了基于MoO3/Ag/MoO3(MAM)透明导电电极和ITO电极的聚合物太阳能电池的光学性能。分别对电池耦合层厚度、活化层厚度和金属电极进行了优化,得到了优良效率的结构。结果表明,MAM与ITO有机太阳能电池在不同活性层厚度和不同光学间隔层厚度条件下有明显的光学性能差异;对于薄活性层MAM电极器件(100nm),最大短路电流密度可达到16.85mA/cm^2,比ITO器件提高了7.3mA/cm^2,而对于厚活性层MAM电极(270nm),ITO电极器件的光学性能明显优于MAM器件;还通过改变光学间隔层LiF的厚度进行计算,得出本仿真条件下两种结构性能差异的临界光学间隔层厚度为30nm。     

SiC光导开关衬底与电极界面场强仿真与优化设计

研究电极结构、SiC与电极连接结构对界面场强的影响,通过电极边缘以及SiC晶体结构的优化降低界面处的电场增强,并通过高压试验测试优化电极结构的击穿电压。结果表明,优化电极倒角以及SiC晶体与电极的界面下埋可有效降低电场增强,在电极为圆倒角及界面使用焊料连接的结构下,使用介质环的器件在电压22 kV时击穿。     

有机薄膜电致发光器件在反向偏压下的电致发光

合成了性能优良的聚合物--聚对苯乙烯,并采用甩胶方法制备了单层薄膜电致发光器件ITO/PPV/Al.在所制备的器件上观察到反向偏压下的电致发光现象,记录了在不同反向偏压下的电致发光光谱,测量了在反向偏压下的电流和发光强度,初步讨论了有机发光器件在反向偏压下的发光机理.     

Design of near-unity transmittance dielectric/Ag/ITO electrodes for GaN-based light-emitting diodes

We designed a near-unity transmittance dielectric/Ag/ITO electrode for high-efficiency GaN-based light-emitting diodes by using the scattering matrix method. The transmittance of an ultrathin metal layer, sandwiched between a dielectric layer and an ITO layer, was investigated as a function of the thickness and the optical constant of each constituent layer. Three different metals (Ag, Au, and Al) were examined as the metal layer. The analytical simulation indicated that the transmittance of a dielectric/metal/ITO multilayer film is maximized with an approximately 10-nm-thick Ag layer. Additionally, the transmittance also tends to increase as the refractive index of the upper dielectric layer increases. By tailoring the thickness of the dielectric layer and the ITO layer, the dielectric/Ag/ITO structure yielded a transmittance of 0.97, which surpasses the maximum transmittance (0.91) of a single ITO film. Furthermore, this extraordinary transmittance was present for other visible wavelengths of light, including violet and green colors. A complex phasor diagram model confirmed that the transmittance of the dielectric/metal/ITO multilayer film is influenced by the interference of reflected partial waves. These numerical findings underpin a rational design principle for metal-based multilayer films that are utilized as transparent electrodes for the development of efficient light-emitting diodes and solar cell devices.     

多层铁电陶瓷击穿分析及优化

建立了多层串联PZT95/5爆电换能组件3维数值模型,对固化封装条件下陶瓷介质击穿问题进行了计算分析,计算结果表明:在不改动器件外部结构尺寸条件下,采用等厚度PZT95/5叠片结构布局对进一步提高输出电压方面存在瓶颈。为克服上述影响以及降低爆电换能组件击穿概率,提出了PZT95/5铁电陶瓷非等厚度布局解决方案。为实现上述设想,通过引入不等式约束条件计算得到一组非等厚度优化布局,将爆电换能组件所用PZT95/5铁电陶瓷数量减至19片,同时有效实现该布局下,各片PZT95/5陶瓷电压均低于对应厚度击穿电压的优化目标。     

High density Al2O3/TaN-based metal--insulator-- metal capacitors in application to radio frequency integrated circuits

Metal-insulator-metal （MIM） capacitors with atomic-layer-deposited Al2O3 dielectric and reactively sputtered TaN electrodes in application to radio frequency integrated circuits have been characterized electrically. The capacitors exhibit a high density of about 6.05 fF/μm^2, a small leakage current of 4.8 × 10^-8 A/cm^2 at 3 V, a high breakdown electric field of 8.61 MV/cm as well as acceptable voltage coefficients of capacitance （VCCs） of 795 ppm/V2 and 268ppm/V at 1 MHz. The observed properties should be attributed to high-quality Al2O3 film and chemically stable TaN electrodes. Further, a logarithmically linear relationship between quadratic VCC and frequency is observed due to the change of relaxation time with carrier mobility in the dielectric. The conduction mechanism in the high field ranges is dominated by the Poole-Frenkel emission, and the leakage current in the low field ranges is likely to be associated with trap-assisted tunnelling. Meanwhile, the Al2O3 dielectric presents charge trapping under low voltage stresses, and defect generation under high voltage stresses, and it has a hard-breakdown performance.     

“Positive” and “negative” electric-pulse-induced reversible resistance switching effect in Pr<Subscript>0.7</Subscript>Ca<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> films

“Negative” electric-pulse-induced reversible resistance (EPIR) switching phenomenon was found in In/PCMO/Pt sandwich, in which the high resistance can be written with positive voltage pulses, and the low resistance can be reset using negative voltage pulses (the positive voltage direction is defined as going from the top electrode to the bottom electrode). This is just the opposite from the “positive” EPIR effect in Ag/PCMO/Pt sandwich, in which the high resistance can be written only with negative voltage pulses, and the low resistance can be reset using positive voltage pulses. The I–V hysteresis curves of In/PCMO/Pt and Ag/PCMO/Pt sandwiches also show opposite directions, i.e., counterclockwise and clockwise under a negative voltage region for indium and Ag electrode systems, respectively. C–V characteristics show that the barrier does not exist in Ag/PCMO/Pt sandwich, while In/PCMO/Pt sandwich exhibits an obvious Schottky-like barrier. We suggest that in the negative EPIR behavior in In/PCMO/Pt structure, the resistance states are mainly controlled changing the Schottky-like barrier at the interface with the weak effect of carrier trapping process, while the positive EPIR behavior in Ag/PCMO/Pt sandwich mainly depends on the carrier trapping process at the interface. PACS 72.80.-r; 73.40.-C; 75.70.-i     

Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices

Ag/ZnO/Pt structure resistive switching devices are fabricated by radio frequency (RF) magnetron sputtering at room temperature. The memory devices exhibit stable and reversible resistive switching behavior. The ratio of high resistance state to low resistance state can reach as high as 10 2 . The retention measurement indicates that the memory property of these devices can be maintained for a long time (over 10 4 s under 0.1-V durable stress). Moreover, the operation voltages are very low, -0.4 V (OFF state) and 0.8 V (ON state). A high-voltage forming process is not required in the initial state, and multi-step reset process is demonstrated. Resistive switching device with the Ag/ZnO/ITO structure is constructed for comparison with the Ag/ZnO/Pt device.     

Investigation of a 4H-SiC metal-insulation-semiconductor structure with an Al2O3/SiO2 stacked dielectric

Atomic layer deposited(ALD) Al2O3 /dry-oxidized ultrathin SiO2 films as a high-k gate dielectric grown on 8°off-axis 4H-SiC(0001) epitaxial wafers are investigated in this paper.The metal-insulation-semiconductor(MIS) capacitors,respectively with different gate dielectric stacks(Al2O3/SiO2,Al2O3,and SiO2) are fabricated and compared with each other.The I-V measurements show that the Al2O3/SiO2 stack has a high breakdown field(≥12 MV/cm) comparable to SiO2,and a relatively low gate leakage current of1×10-7A/cm2 at an electric field of4 MV/cm comparable to Al2O3.The 1-MHz high frequency C-V measurements exhibit that the Al2O3/SiO2 stack has a smaller positive flat-band voltage shift and hysteresis voltage,indicating a less effective charge and slow-trap density near the interface.     

高场强下金属化膜电容器绝缘电阻特性

分析了高电场强度下金属化膜电容器绝缘电阻的特点,得出高电场强度下金属化膜电容器绝缘电阻是电容器介质膜泄漏和自愈过程的综合反映。针对高场强下的应用条件提出一种金属化膜电容器绝缘电阻的测试方法,并对高场强下电容器的绝缘电阻进行测试。测试结果表明:在300~400 V/m工作场强范围内金属化膜电容器绝缘电阻随工作场强增大会急剧减小,由于自愈的作用,绝缘电阻下降幅度随场强增加会逐渐变缓;在20~50 ℃工作温度范围内,金属化膜电容器绝缘电阻随温度升高会急剧减小,同样由于自愈的作用,绝缘电阻下降幅度随温度增高会逐渐变缓。分析得出,高温高场强下金属化膜电容器介质膜泄漏将会导致电容器电压出现明显下降,影响电容器和脉冲功率系统的储能效率。     

无机厚膜发光器件绝缘层的研究

采用丝网印刷技术,在Al2O3陶瓷基板上印刷、高温烧结内电极及绝缘层,制备出陶瓷厚膜基板,进而制备了新型厚膜电致发光显示器(TDEL)。整个器件结构为陶瓷基板/内电极/厚膜绝缘层/发光层/薄膜绝缘层/ITO透明电极。研究不同结构的无机厚膜发光器件对器件性能的影响,并对器件的亮度—电压、亮度—频率进行测量。结果显示绝缘层在无机发光器件中不是单纯的保护作用,它对器件的性能有十分重要的影响。主要是对注入电子的加速作用,从而提高发光亮度。绝缘层本身对无机厚膜发光器件的发光机理没有关系。     

The statistics of dielectric breakdown in MOS capacitors under static and dynamic voltage stress

The statistics of dielectric breakdown at fields 8 MV/cm has been studied under both static (constant voltage) and dynamic (ramped voltage) conditions. MOS capacitors of the same size and from the same wafer were used for all measurements. Data from both types of test conformed to a Weibull distribution. The Weibull parameters a and b, which determine the time and field dependence of breakdown, were calculated from static tests at various applied fields and independently from dynamic tests at various ramp-rates. The values of a and b were: a 0.24; b 6.89 and a 0.34; b 6.55, from static and dynamic tests respectively. The similarity of the values for the two pairs of Weibull parameters suggests that breakdown proceeds by the same mechanism in both types of test.