氮气流量对磁控溅射InN薄膜特性的影响

采用射频磁控溅射法在蓝宝石衬底上制备了InN薄膜. 研究了N2流量对InN薄膜的晶体结构、表面形貌、光学和电学特性的影响. X射线衍射(XRD)测试结果显示,InN呈六方纤锌矿结构,具有明显(002)择优取向;SEM与AFM图像显示InN薄膜均匀致密,低N2流量下随流量增加,表面逐渐趋于光滑平整,过高的N2流量使薄膜生长方式发生改变;通过检测薄膜吸收特性,利用线性外推法计算禁带宽度为1.81~1.96 eV;电学测试结果表明,制备的薄膜样品均呈现n型导电特性,且迁移率较低,最大为12.2 cm2/v∙s;载流子浓度较高,保持在1021 cm-3数量级;电阻率较小,范围是0.202~0.33 mΩ∙cm.     

极板电压与间距对大气压射频氩等离子体放电参数的影响

基于1维流体力学模型,对大气压射频裸露金属电极氩气放电过程进行了研究。模型中考虑了氩等离子体放电过程中主要发生的激发和电离等7个反应过程,对等离子体反应产生的主要粒子,包括电子、氩原子离子Ar+、氩分子离子Ar2+和氩激发态Ar*等,建立连续性方程、动量方程和电流平衡方程。分析了极板电压、极板间距对上述粒子数密度分布的影响。给出了电子,Ar+,Ar*和Ar2+密度随极板电压及间距变化的时空演化过程。得出极板电压或极板间距的改变会使放电空间的电场发生改变,对应一定的极板间距,极板电压有一个最佳值,极板电压和间距的变化会使对应的极板间有一个最佳电场值,而对应最佳电场有一个等离子体气体间最佳反应系数,从而使放电空间粒子数密度发生改变。     

加速电压和阳极流率对离子推力器性能的影响

为了研究离子推力器输入参数对工作性能的影响,采用试验研究和理论分析的方法研究了离子推力器加速电压和阳极流率对离子推力器性能的影响.研究结果表明:一定范围内离子束流随着加速电压绝对值的减小不断减小,然后突然增大,大、小推力模式下的电子返流极限电压分别为–140 V和–115 V,放电电压、放电损耗随阳极流率减小单调增大,减速电流单调减小,通过调节阳极电流、栅间电压、工质气体流量,功率为300—4850 W下,推力为11—188 m N,比冲为1800—3567 s,效率为34%—67%,在3000 W时推力器最高效率达到67%,该转折点对推力器设计和应用有关键意义,应用要结合在轨任务剖面选择合理的工作参数区间.     

非对称电极表面微观形貌对交流电渗流速的影响

经典交流电渗理论是利用电场进行非机械式微流体驱动的基础.传统理论交流电渗理论以双电层理论为基础,通过耦合电场方程以及流场方程得到微电极表面交流电渗流速表达式,通常与实验流速相差较大. 以电极表面微观形貌对交流电渗流速的影响为研究目标,定义微电极表面粗糙度为微观形貌特征参数,建立了等效双电层模型,并对传统交流电渗流速公式进行了修正.理论并仿真分析了表面粗糙度对于交流电渗流速的影响,利用非对称电极对交流电渗微流体驱动进行了实验研究,并进行对比分析.结果表明,理论分析与实验结果具有较好的一致性. 关键词： 交流电渗 电极表面粗糙度 等效双电层     

Effects of rf bias voltage and H2 flow rate on the growth of cubic boron nitride films by chemical vapor deposition

Cubic boron nitride (cBN) films were deposited by rf bias-assisted dc plasma-jet chemical vapor deposition. Effects of H₂ flow rate and bias voltage on the growth of the cBN films were investigated. High phase purity cBN (over 90%) can be obtained in a wide range of H₂ flow rates of 5–10 sccm and bias voltages from -50 to -100 V. Nearly phase pure cBN films were deposited at a H₂ flow rate of 10 sccm and bias voltages of -60 V and -70 V. The deposited films were characterized by Raman spectroscopy, Fourier-transform infrared spectroscopy, and glancing angle X-ray diffraction. Raman peaks were observed for all the cBN films, which indicate a good crystallinity of the films. PACS 61.10.Eq; 78.30.-j; 81.15.Gh     

电极形状对GaN基发光二极管芯片性能的影响

采用Crosslight APSYS这一行业专业软件对p-GaN,InGaN/InGaN多量子阱,n-GaN和蓝宝石的芯片结构研究了不同电极形状与器件的光电性能之间的关系.优化设计了普通指形电极、对称型指形电极、h形指形电极、旋转形电极、中心环绕形电极、树形电极等6种电极结构.通过电极优化设计,电流分布更加均匀,减小了电流的聚集效应.优化后的电极结构结果表明:芯片的电特性得到了提高,芯片的光特性得到了明显改善,芯片的出光效率大幅度提高,芯片的转化效率得到了提升.     

Analysis of electrode system for generation of high-power electrodynamic flow

A high-power electrodynamic flow in atmospheric air is numerically simulated and experimentally studied. An electrode system consisting of a cylindrical plasma emitter and a plane metal grid collector of ions is used to generate a flow with a speed of 2 m/s and a volume rate of 15 L/s.     

Effects of In and Mg doping on properties of ZnO nanoparticles by flame spray synthesis

The Mg- and In-doped zinc oxide (Mg _x Zn_1−x O, In _y Zn_1−y O) nanoparticles were successfully prepared by flame spray synthesis method. According to the results obtained from X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and UV–Vis absorption spectra, it was concluded that the Mg or In doping induced the lattice constants to change to some extent; the band gap of Mg _x Zn_1−x O also increased with respect to the decreasing band gap of In _y Zn_1−y O. Moreover, the strong UV emission and weak visible emission were investigated by photoluminescence spectra, while the mechanisms of Mg or In doping on PL spectra have been discussed in detail.     

Logistic系统跃迁率的时间延迟效应

本文研究了时间延迟对Logistic系统从亚稳态跃迁到稳定态的跃迁率的影响. 假设在细胞演化过程中细胞衰减存在时间延迟,利用小延迟时间条件下一阶近似方法和最陡下降法导出了系统的跃迁率解析式. 数值计算结果表明,内噪声,外噪声和内外噪声之间的关联促使系统从亚稳态跃迁到稳定态, 而时间延迟阻碍了系统从亚稳态到稳定态的跃迁, 即时间延迟增强了系统亚稳态的稳定性. 关键词： Logistic模型 跃迁率 时间延迟 噪声     

Influence of the rate of voltage rise on electrical forming and breakdown in a thin-film MIM system

An investigation was made of the influence of the rate of voltage rise on forming and breakdown in a thin-film metal-insulator-metal(MIM) system. It was found that an increase in the rate of voltage rise led to a reduction in the forming probability and consequently to an increase in the breakdown probability when the voltage exceeded a certain critical value, under otherwise identical conditions. Taking into account the known published data on forming and breakdown, the experimental results obtained were used as the basis for a qualitative model of electrical breakdown in the investigated MIM systems.Institute of Automated Control and Radio-Electronic Systems, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 95–98, November, 1992.     

Magnetron sputtering of YBaCuO target: Effects of discharge voltage and deposition rate variation

The time variations of the discharge voltage and YBaCuO film deposition rate in an on-axis magnetron sputterer are studied. In the case of an YBaCuO ceramic target, the discharge voltage and the rate of superconducting phase deposition decrease with time, exponentially approaching a quasi-steady regime. At a pressure of 100 Pa, a decrease in the magnetic field induction near the target from 1200 to 600 G leads to a rise in the discharge voltage by 25–30% and increases the deposition rate more than twofold. The deposited films offer high electrophysical parameters, as demonstrated with a high-frequency circuit: the intrinsic Q factor of the circuit at 64.5 MHz is found to be 2.7 × 10⁵.     

Pyroelectric properties of an antiferroelectric liquid crystal

The effects of temperature and applied voltage on the pyroelectric properties of an antiferroelectric liquid crystal are given. It has been found that the pyroelectric signal depends strongly on the bias voltage across the sample. The pyroelectric signal behaviour is interpreted with the aid of spontaneous polarization data and good agreement is found between the results from the pyroelectric and polarization techniques. The spontaneous polarization of the sample exhibits the temperature- and field-induced `Devil's staircase' behaviour, as predicted by the Ising model.     

Effects of deposition temperature and hydrogen flow rate on the properties of the Al-doped ZnO thin films and amorphous silicon thin-film solar cells

A compound of 98 mol% ZnO and 1 mol% Al₂O₃ (AZO, Al:Zn = 98:2) was sintered at 1350 °C as a target and the AZO thin films were deposited on glass using a radio frequency magnetron sputtering system. The effects of deposition temperature (from room temperature to ～300 °C) on the optical transmission spectrum of the AZO thin films were studied. The Burstein–Moss shift was observed and used to prove that defects in the AZO thin films decreased with increasing deposition temperature. The variations in the optical band gap (E _g) values of the AZO thin films were evaluated from plots of (αhv)²=c(hν?E _g), revealing that the measured E _g values increased with increasing deposition temperature. The effects of the H₂ flow rate during deposition (0 %～11.76 %, deposition temperature of 200 °C) on the crystallization, morphology, resistivity, carrier concentration, carrier mobility, and optical transmission spectrum of the AZO thin films were measured. The chemical structures of the Ar-deposited and 2 % H₂-flow rate-deposited AZO thin films (both were deposited at 200 °C) were investigated by XPS to clarify the mechanism of improvement in resistivity. The prepared AZO thin films were also used as transparent electrodes to fabricate amorphous silicon thin-film solar cells, and their properties were also measured.     

螺旋型波纹管流阻测量系统研制及液氮压降测量

超导电缆芯通常内嵌于真空绝热波纹管并被管内低温流动介质冷却和保护。螺旋型波纹管因一次成型制作长度上的优势更适合于大长度超导电缆应用。设计并搭建了螺旋型波纹管液氮流动压降特性实验台,不仅可以方便地更换被测波纹管样品,而且允许插入不同规格的线芯模拟物。利用该实验台测量了液氮流量1～9 L/min区间内不同规格(通径11～15 mm)螺旋型波纹管插入4 mm线芯后的流动压降特性。实验结果验证了三维波纹管压降损失数值模型的准确性。同时,通过进行不同尺寸波纹管实验,发现尺寸变化对摩擦因子变化规律的影响不明显,这为通过该实验台获得小管径实验数据用于指导大管径实际应用波纹管设计提供了理论基础。     

Effects of temperature and equivalence ratio on the ignition of n-heptane fuel spray in turbulent flow

Direct numerical simulations were performed to study the autoignition process of n-heptane fuel spray in a turbulent field. For the solution of the carrier gas fluid, the Eulerian method is employed, while for the fuel droplets, the Lagrangian method is used. Droplets are initialized at random locations in a two-dimensional isotropic turbulent field. A chemistry mechanism for n-heptane with 44 species and 112 reactions was adopted to describe the chemical reactions. Three cases with the same initial global equivalence ratio (0.5) and different initial gas phase temperatures (1100, 1200, and 1300 K) were simulated. In addition, two cases with initial global equivalence ratios of 1.0 and 1.5 and initial temperature 1300 K were simulated to examine the effect of equivalence ratio. Evolution of temperature, species mass fraction, reaction rate, and the joint PDF of temperature and equivalence ratio are presented. Effects of the initial gas temperature and equivalence ratio on vaporization and ignition are discussed. A correlation was derived relating ignition delay times to temperature and equivalence ratio. It was confirmed that with the increase of initial temperature, the autoignition occurs earlier. With the increase of the initial equivalence ratio, however, autoignition occurs later due to a larger decrease in gas phase temperature caused by fuel droplet evaporation. The results obtained in this study are expected to be constructive in understanding fuel spray combustion, such as that in homogeneous charge compression ignition systems.     

液氢加注系统低温管道中的两相流仿真与分析

在液氢加注输送过程中,由于其具有低温和高压的特性,极易产生气液两相流,而使管道发生过压故障.因此,对液氢管道的仿真研究有着重要作用.文中对裸态和防护后的液氢管道进行建模计算,并通过AMESim软件的两相流库对氢物理属性和管道模型进行仿真分析,然后对系统的对液氢输送管道进行了应用改进与分析.仿真结果表明:液氢在裸管道中输...     

Effects of calcining temperature and heating rate on properties of high-permeability NiCuZn ferrites

The effects of calcining temperature and heating rate during sintering on densification and magnetic properties of high-permeability NiCuZn ferrites were investigated. It was confirmed that increasing calcining temperature lead to increase of the molding density (the pressed density of samples that have not been sintered), both molding density and activity of the calcined powders determined the sintering density (the density of samples after sintering) of the samples. With the calcining temperature of 1060 °C, the sintering density reached a peak. The initial permeability also peaked with the calcining temperature of 1060 °C, which could be attributed to the highest sintering density and relatively big grain size. Quality factor peaked with the calcining temperature of 1020 °C, which could be attributed to the biggest grain size. Calcining temperature had no distinct connection with Curie temperature, and it had a slight effect on the saturation magnetism (B_s) due to varieties of the sintering density. Further studies showed that heating rate had a pronounced effect on initial permeability and quality factor, which could be attributed to a variety in the grain size. The critical heating rate value was 2 °C/min in order to obtain high-performance NiCuZn ferrites with both high initial permeability and high quality factor.     

Effects of processing on the electrical and structural properties of spray deposited CdS:In thin films

Polycrystalline CdS:In thin films were prepared by the Spray pyrolysis technique (SP) at a substrate temperature T_s=490 °C. The effects of annealing in nitrogen atmosphere at 400 °C and HCl-etching on the electrical and structural properties of the films were investigated. The electrical properties were studied through the analysis of the I-V curves, while the structural properties were studied through the analysis of the X-ray diffraction (XRD) patterns and the scanning electron microscope (SEM) images. An increase in the films’ resistivity was occurred after annealing and/or HCl-etching, which was accompanied by changes in the XRD patterns and SEM images. These changes were related to a phase change from the mixed (cubic and hexagonal) phase to the hexagonal phase which was expected to occur during the aforementioned processes. The X-ray diffraction (XRD) patterns and the scanning electron microscope images confirm this expectation.