Molecular and Electronic‐Structure Basis of the Ambipolar Behavior of Naphthalimide–Terthiophene Derivatives: Implementation in Organic Field‐Effect Transistors

A new family of naphthalimide‐fused thienopyrazine derivatives for ambipolar charge transport in organic field‐effect transistors is presented. Their electronic and molecular structures were elucidated through optical and vibrational spectroscopy aided by DFT calculations. The results indicate that these compounds have completely planar molecular skeletons which promote good film crystallinity and low reorganization energies for both electron and hole transport. Their performance in organic field‐effect transistors is compared with twisted and planar naphthaleneamidine monoimide‐fused terthiophenes in order to understand the origin of ambipolarity in this new series of molecular semiconductors.     

Solution‐Processed Bulk‐Heterojunction Photovoltaic Cells Based on Dendritic and Star‐Shaped D‐π‐A Organic Dyes

A series of D ‐π‐A organic dendritic and star‐shaped molecules based on three various chromophores (i.e., the truxene nodes, triphenylamine moieties as the donor, and benzothiadiazole chromophore as the acceptor) and their corresponding model compounds are facilely developed. Their photophysical and electrochemical properties are investigated in detail by UV/Vis absorption and photoluminescent spectroscopy, and cyclic voltammetry. By changing the various conjugated spacers (i.e., single bond, double bond, and triple bond) among the three chromophores of dendritic series, their photophysical properties (that is, the one‐photon absorption range and two‐photon absorption cross‐section values) are effectively modulated. All D ‐π‐A conjugated oligomers show a broad and strong absorption band from 250 to 700 nm in thin films. Solution‐processed bulk‐heterojunction photovoltaic devices using our oligomer as donor and PCBM as acceptor are fabricated and measured. The power conversion efficiency of the devices based on our oligomers continuously increases from DBTTr to TRTD2A as a result of an increasing relative absorption intensity in longer wavelength region by changing the donor‐acceptor ratio and conjugated spacers between the donor and acceptor. The power conversion efficiency of the devices based on TRTD2A was 0.54 % under the illumination of AM 1.5 and 100 mW cm^?2, which is the highest value recorded based on D ‐π‐A conjugated oligomers containing triphenylamine moieties and benzothiadiazole chromophores with truxene to date.     

Synthesis,Crystal Structures,and Properties of 6,12‐Diaryl‐Substituted Indeno[1,2‐b]fluorenes

Fused polycyclic indeno[1,2‐b]fluorene derivatives with aryl substituents at the 6,12‐positions have been prepared as a potential antiaromatic 20π electronic system. They showed strong absorptions in the visible region and amphoteric redox properties. The quinoid‐type molecular structures were revealed by X‐ray crystal‐structure analysis, which indicated that the bond lengths of the quinoid unit depend on the aryl substituents. Whereas nucleus‐independent chemical shift NICS(1) calculations indicate the antiaromatic nature of the s‐indacene core, they have higher stability than substituted acene derivatives. The derivatives with difluorophenyl or anthryl groups were stable in solution. Vapor‐deposited thin films showed ambipolar carrier transportation in the field‐effect transistor devices.     

HOMO Stabilisation in π‐Extended Dibenzotetrathiafulvalene Derivatives for Their Application in Organic Field‐Effect Transistors

Three new organic semiconductors, in which either two methoxy units are directly linked to a dibenzotetrathiafulvalene (DB‐TTF) central core and a 2,1,3‐chalcogendiazole is fused on the one side, or four methoxy groups are linked to the DB‐TTF, have been synthesised as active materials for organic field‐effect transistors (OFETs). Their electrochemical behaviour, electronic absorption and fluorescence emission as well as photoinduced intramolecular charge transfer were studied. The electron‐withdrawing 2,1,3‐chalcogendiazole unit significantly affects the electronic properties of these semiconductors, lowering both the HOMO and LUMO energy levels and hence increasing the stability of the semiconducting material. The solution‐processed single‐crystal transistors exhibit high performance with a hole mobility up to 0.04 cm² V^?1 s^?1 as well as good ambient stability.     

Organic Fluorophores Exhibiting Highly Efficient Photoluminescence in the Solid State

There has been extensive research on the development of organic optoelectronic devices, such as organic light‐emitting diodes, organic field‐effect transistors, and organic solid‐state lasers from various viewpoints, ranging from basic studies to practical applications. As organic materials are used as solids in these devices, the importance of organic chromophores that exhibit intense emissions of visible light in the solid state is greatly increasing in the field of organic electronics. However, highly efficient emission from organic solids is very difficult to attain because most organic emitting materials strongly tend to cause concentration quenching of the luminescence in the condensed phase. Therefore, in order to generate and improve organic optoelectronic devices, it is necessary to design novel chromophores that exhibit superior solid‐state emission performance. This Focus Review covers the recent development of highly emissive organic small molecules whose photoluminescence quantum yields in the solid state have been reported. Following the introduction, the photophysical processes of excited molecules are briefly reviewed. Subsequently, organic solid fluorophores are described with an emphasis on the characteristics of their molecular structures.     

Enhanced Performance of Solution‐Processed TESPE‐ADT Thin‐Film Transistors

A solution‐processed anthradithiophene derivative, 5,11‐bis(4‐triethylsilylphenylethynyl)anthradithiophene (TESPE‐ADT), is studied for use as the semiconducting material in thin‐film transistors (TFTs). To enhance the electrical performance of the devices, two different kinds of solution processing (spin‐coating and drop‐casting) on various gate dielectrics as well as additional post‐treatment are employed on thin films of TESPE‐ADT, and p‐channel OTFT transport with hole mobilities as high as ～0.12 cm² V^?1 s^?1 are achieved. The film morphologies and formed microstructures of the semiconductor films are characterized in terms of film processing conditions and are correlated with variations in device performance.     

Solution‐Processed Bulk Heterojunction Photovoltaic Cells from Gradient π‐Conjugated Thienylene Vinylene Dendrimers

A series of gradient π‐conjugated dendrimers and their corresponding models based on 5,5,10,10,15,15‐hexahexyltruxene moieties as nodes and oligo(thienylene vinylene) (OTVs) units with different lengths as branching arms are synthesized in good yields through Wittig–Horner reactions. All new compounds are fully characterized by ¹H and ¹³C NMR spectroscopy, elemental analysis, and MALDI‐TOF MS or ESI‐MS. Investigation of their photophysical properties reveals that the gradient dendritic scaffold not only results in a higher molar absorption coefficient and broader absorption region than those of their corresponding model compounds, but also improves the PL quantum yields relative to the corresponding OTVs. The suitable HOMO and LUMO levels as well as excellent film forming properties make these molecules potential candidates for organic solar cells. Solution‐processed bulk heterojunction solar cells using these dendrimers as donor and [6,6]‐phenyl‐C₆₁ butyric acid methyl ester as acceptor are prepared and tested. The power conversion efficiency of the devices based on G0-4-2 is 0.40 % under illumination of air mass 1.5 and 100 mW cm^?2. This is the highest record value for OTV‐based materials to date. Although the absorption band of dendrimer G0-4-2 is much narrower than that of poly(3‐hexylthienylene vinylene) (P3HTV), the efficiency of its solar cell device is almost twice that of the device based on P3HTV. This result shows clearly the advantage of gradient dendritic structures as active materials for photovoltaic cells.     

Heptagon‐Embedded Pentacene: Synthesis,Structures, and Thin‐Film Transistors of Dibenzo[d,d′]benzo[1,2‐a:4,5‐a′]dicycloheptenes

This study presents a new class of conjugated polycyclic molecules that contain seven‐membered rings, detailing their synthesis, crystal structures and semiconductor properties. These molecules have a nearly flat C₆‐C₇‐C₆‐C₇‐C₆ polycyclic framework with a p‐quinodimethane core. With field‐effect mobilities of up to 0.76 cm² V^?1 s^?1 as measured from solution‐processed thin‐film transistors, these molecules are alternatives to the well‐studied pentacene analogues for applications in organic electronic devices.     

A Soluble Dynamic Complex Strategy for the Solution‐Processed Fabrication of Organic Thin‐Film Transistors of a Boron‐Containing Polycyclic Aromatic Hydrocarbon

The solution‐processed fabrication of thin films of organic semiconductors enables the production of cost‐effective, large‐area organic electronic devices under mild conditions. The formation/dissociation of a dynamic B?N coordination bond can be used for the solution‐processed fabrication of semiconducting films of polycyclic aromatic hydrocarbon (PAH) materials. The poor solubility of a boron‐containing PAH in chloroform, toluene, and chlorobenzene was significantly improved by addition of minor amounts (1 wt % of solvent) of pyridine derivatives, as their coordination to the boron atom suppresses the inherent propensity of the PAHs to form π‐stacks. Spin‐coating solutions of the thus formed Lewis acid–base complexes resulted in the formation of amorphous thin films, which could be converted into polycrystalline films of the boron‐containing PAH upon thermal annealing. Organic thin‐film transistors prepared by this solution process displayed typical p‐type characteristics.     

Tetrachlorinated Tetraazaperopyrenes (TAPPs): Highly Fluorescent Dyes and Semiconductors for Air‐Stable Organic n‐Channel Transistors and Complementary Circuits

A range of 2,9‐perfluoroalkyl‐substituted tetraazaperopyrene (TAPP) derivatives ( 1 – 5 ) was synthesised by reacting 4,9‐diamino‐3,10‐perylenequinone diimine (DPDI) with the corresponding carboxylic acid chloride or anhydride in the presence of a base. The reaction of compounds 1 – 4 with dichloroisocyanuric acid (DIC) in concentrated sulphuric acid resulted in the fourfold substitution of the tetraazaperopyrene core, yielding the 2,9‐bisperfluoroalkyl‐4,7,11,14‐tetrachloro‐1,3,8,10‐tetraazaperopyrenes 6 – 9 , respectively. The optical and electrochemical data demonstrate the drastic influence of the core substitution on the properties. All compounds are highly luminescent (fluorescence quantum yields of up to Φ=0.8). The LUMO energies of the tetrachlorinated TAPP derivatives (determined by cyclic voltammetry and computed by DFT calulations) were found to be below ?4 eV. In the course of this work the performance of TAPP derivatives in organic thin‐film transistors (TFTs) was investigated, and their n‐channel characteristics with field‐effect mobilities of up to 0.14 cm² V^?1 s^?1 and an on/off current ratio of >10⁶ were confirmed. Long‐term stabilities of 3–4 months under ambient conditions of the devices were established. Complementary inverters and ring oscillators with n‐channel TFTs based on compound 8 and p‐channel TFTs based on dinaphtho‐[2,3‐b:2′,3′‐f]thieno[3,2‐b]thiophene (DNTT) were fabricated on a glass substrate.     

Enhanced Performance of Benzothieno[3,2‐b]thiophene (BTT)‐Based Bottom‐Contact Thin‐Film Transistors

Three new benzothieno[3,2‐b]thiophene ( BTT ; 1 ) derivatives, which were end‐functionalized with phenyl ( BTT‐P ; 2 ), benzothiophenyl ( BTT‐BT ; 3 ), and benzothieno[3,2‐b]thiophenyl groups ( BBTT ; 4 ; dimer of 1 ), were synthesized and characterized in organic thin‐film transistors (OTFTs). A new and improved synthetic method for BTT s was developed, which enabled the efficient realization of new BTT ‐based semiconductors. The crystal structure of BBTT was determined by single‐crystal X‐ray diffraction. Within this family, BBTT , which had the largest conjugation of the BTT derivatives in this study, exhibited the highest p‐channel characteristic, with a carrier mobility as high as 0.22 cm² V^?1 s^?1 and a current on/off ratio of 1×10⁷, as well as good ambient stability for bottom‐contact/bottom‐gate OTFT devices. The device characteristics were correlated with the film morphologies and microstructures of the corresponding compounds.     

Solution‐Processable n‐Type Semiconductors Based on Unsymmetrical Naphthalene Imides: Synthesis,Characterization, and Applications in Field‐Effect Transistors

A series of unsymmetrical naphthalene imide derivatives ( 1a , 1b , 2 , 3 , 4 , 5 ) with high electron affinity was synthesized and used in n‐channel organic field‐effect transistors (OFETs). They have very good solubility in common organic solvents and good thermal stability up to 320 °C. Their photophysical, electrochemical, and thermal properties were investigated in detail. They showed low‐lying LUMO energy levels from ?3.90 to ?4.15 eV owing to a strong electron‐withdrawing character. Solution‐processed thin‐film OFETs based on 1a , 1b , 2 , 3 , 4 were measured in both N₂ and air. They all showed n‐type FET behavior. The liquid‐crystalline compounds 1a , 1b , and 3 showed good performance owing to the self‐healing properties of the film in the liquid‐crystal phase. Compound 3 has an electron mobility of up to 0.016 cm² V^?1 s^?1 and current on/off ratios of 10⁴–10⁵.     

Heterotermetallic Indium Lithium Halostannates: Low‐Temperature Single‐Source Precursors for Tin‐Rich Indium Tin Oxides and Their Application for Thin‐Film Transistors

The syntheses and structural elucidation of dimeric [Sn(OCyHex)₂] ( 1 ), its corresponding (cyclohexoxy)alkalistannates(II) [{M(OCyHex)₃Sn}₂] (M=Li ( 2 ), Na ( 3 ), K ( 4 )), and of the first heteroleptic heterotermetallic Li/In/Sn–haloalkoxide clusters [X₂In{LiSn₂(OCyHex)₆}] (X=Br ( 5 ), Cl ( 6 )) with a double seco‐norcubane core are reported. They represent suitable precursors for new amorphous indium tin oxide (ITO) materials as transparent conducting oxides with drastically reduced concentrations of expensive indium, while maintaining their high electrical performance. In fact, compounds 5 and 6 were successfully degraded under dry synthetic air at relatively low temperature, resulting in new semiconducting tin‐rich ITOs homogeneously dispersed in a tin oxide/lithium oxide matrix. The obtained particles were investigated and characterised by different analytical techniques, such as powder XRD, IR spectroscopy, SEM, TEM and energy‐dispersive X‐ray spectroscopy (EDX). The analytical data confirm that the final materials consist of tin‐containing indium oxide embedded in an amorphous tin oxide matrix. The typical broadening and shift of the observed indium oxide reflections to higher 2θ values in the powder XRD pattern clearly indicated that tin centres were successfully incorporated into the In₂O₃ lattice and partially occupied In³⁺ sites. Investigations by EDX mapping proved that Sn was homogeneously distributed in the final materials. Thin‐film field‐effect transistors (FETs) were fabricated by spin‐coating of silicon wafers with solutions of 5 in toluene and subsequent calcination under dry air (25–700 °C). The FETs prepared with precursor 5 exhibited excellent performances, as shown by a charge‐carrier mobility of 6.36×10^?1 cm² V^?1 s (calcination at 250 °C) and an on/off current ratio of 10⁶.     

Synthesis and Photophysical Properties of Dimethoxybis(3,3,3‐trifluoropropen‐1‐yl)benzenes: Compact Chromophores Exhibiting Violet Fluorescence in the Solid State

Dimethoxybis(3,3,3‐trifluo‐ropropen‐1‐yl)benzenes were prepared through palladium‐catalyzed double cross‐coupling reactions of diiododimethoxybenzenes with CF₃C≡CZnCl, followed by reduction of CF₃C≡C groups with LiAlH₄ or H₂ in the presence of the Lindlar catalyst. The edges of the absorption spectra of 1,2‐(MeO)₂‐4,5‐(CF₃CHC=CH)₂benzenes 1 and 1,3‐(MeO)₂‐4,6‐(CF₃CH=CH)₂benzenes 2 in cyclohexane ranged from 348 to 360 nm, whereas the absorption spectra of 1,4‐(MeO)₂‐2,5‐[(E)‐CF₃CH=CH]₂ benzene ((E)‐ 3 ) ended at 406 nm. These findings indicate that the effective conjugation length of (E)‐ 3 was significantly larger than those of 1 and 2 . Consistently, 1 and 2 in cyclohexane exhibited fluorescence with emission maxima in the UV region, whereas (E)‐ 3 in cyclohexane emitted violet light with an emission maximum at 407 nm. All the fluorescence spectra of 1 – 3 in various solvents redshifted as the solvent polarity increased. The photoluminescence of 1 , E‐1 , Z‐1 , 2 , E‐2 , E‐2H , Z‐2 , E‐3 , E‐3H , Z‐3 in the solid states was also observed with emission maxima in the violet region. It is important to note that the quantum yields of (E)‐ 3 in a neat thin film and in a doped polymer film were 0.37 and 0.49, respectively. Density functional theory calculations suggested that the fluorine atoms contribute to a slight extension of both the HOMOs and the LUMOs, as well as narrowing of the HOMO–LUMO gaps when compared with the corresponding fluorine‐free analogues. In the case of (E)‐ 3 , it is suggested that the HOMO–LUMO transition includes charge transfer from the ethereal oxygen atoms to the C(sp²) CF₃ moieties.     

A High‐Performance Organic Field‐Effect Transistor Based on Platinum(II) Porphyrin: Peripheral Substituents on Porphyrin Ligand Significantly Affect Film Structure and Charge Mobility

Organic field‐effect transistors incorporating planar π‐conjugated metal‐free macrocycles and their metal derivatives are fabricated by vacuum deposition. The crystal structures of [H₂(OX)] (H₂OX=etioporphyrin‐I), [Cu(OX)], [Pt(OX)], and [Pt(TBP)] (H₂TBP=tetra‐(n‐butyl)porphyrin) as determined by single crystal X‐ray diffraction (XRD), reveal the absence of occluded solvent molecules. The field‐effect transistors (FETs) made from thin films of all these metal‐free macrocycles and their metal derivatives show a p‐type semiconductor behavior with a charge mobility (μ) ranging from 10^?6 to 10^?1 cm² V^?1 s^?1. Annealing the as‐deposited Pt(OX) film leads to the formation of a polycrystalline film that exhibits excellent overall charge transport properties with a charge mobility of up to 3.2×10^?1 cm² V^?1 s^?1, which is the best value reported for a metalloporphyrin. Compared with their metal derivatives, the field‐effect transistors made from thin films of metal‐free macrocycles (except tetra‐(n‐propyl)porphycene) have significantly lower μ values (3.0×10^?6–3.7×10^?5 cm² V^?1 s^?1).