共查询到19条相似文献,搜索用时 61 毫秒
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GaAs/GaAlAs多量子阱反射型光调制器及自电光效应器件 总被引:1,自引:0,他引:1
采用分子束外延技术生长含有大周期数的GaAs/GaAlAs多量子阶(MQW)及分布布喇格反射器(DBR)的PIN结构器件。研究了量子限制斯塔克效应(QCSE),分布布喇格反射及非对称腔模(ASFP)效应对光的反射调制作用及这三种效应的兼容性对光调制及逻辑器件的重要影响。给出我们研制的反射型光调制器及自电光效应器件的实验结果。对于常通型及常闭型调制器,其两态衬比度可达10dB.所研制的SEED器件,其导通光能耗低于10fJ/(μm)2,实现其光学双稳态及R-S光触发器工作。 相似文献
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采用分子束外延技术生长含有大周期数的GaAs/GaAlAs多量子阶(MQW)及分布布喇格反射器(DBR)的PIN结构器件。研究了量子限制斯塔克效应(QCSE),分布布喇格反射及非对称腔模(ASFP)效应对光的反射调制作用及这三种效应的兼容性对光调制及逻辑器件的重要影响。给出我们研制的反射型光调制器及自电光效应器件的实验结果。对于常通型及常闭型调制器,其两态衬比度可达10dB。所研制的SEED器件,其导通光能耗低于10fJ/(μm) ̄2,实现其光学双稳态及R-S光触发器工作。 相似文献
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1.3μm GaInNAs量子阱RCE光探测器 总被引:3,自引:3,他引:3
采用配有dc-N plasma N源的分子束外延(MBE)技术在GaAs衬底上生长制作了工作波长为1,3μm的GaInNAs量子阱RCE探测器.采用传输矩阵法对器件结构进行优化.吸收区由三个GaInNAs量子阱构成,并用湿法刻蚀和聚酰亚胺对器件进行隔离.在零偏压下,器件最大的量子效率为12%,半峰值全宽(FWHM)为5.8nm,3dB带宽为30MHz,暗电流为2×10-11A.通过对MBE生长条件和器件结构的优化,将进一步提高该器件的性能. 相似文献
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在片上光互连系统中,电光调制器起到将电信号调制为光信号的作用,是光互联系统中的核心部件之一。调制器的3 dB带宽决定着载波所能携带的最大信息量,是衡量调制器性能的核心参数。利用石墨烯和高Q环形谐振腔设计成具有CMOS结构的新型调制器,其集成了石墨烯的宽带吸收、载流子迁移率高等材料优势和高Q值环形光学谐振腔的光程放大的结构优势,通过理论计算,其3 dB调制带宽可以达到100 GHz。同时,基于微环谐振腔的石墨烯电光调制器结构可以方便的与光互联系统中的波分复用器相集成,从而提升片上光互联系统的集成度和降低技术复杂性。 相似文献
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在片上光互连系统中,电光调制器起到将电信号调制为光信号的作用,是光互联系统中的核心部件之一。调制器的3 dB带宽决定着载波所能携带的最大信息量,是衡量调制器性能的核心参数。利用石墨烯和高Q环形谐振腔设计成具有CMOS结构的新型调制器,其集成了石墨烯的宽带吸收、载流子迁移率高等材料优势和高Q值环形光学谐振腔的光程放大的结构优势,通过理论计算,其3 dB调制带宽可以达到100 GHz。同时,基于微环谐振腔的石墨烯电光调制器结构可以方便的与光互联系统中的波分复用器相集成,从而提升片上光互联系统的集成度和降低技术复杂性。 相似文献
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Mee-Yi Ryu Gyu Gwang Shim Phil Won Yu Eunsoon Oh Chulsoo Sone Okhyun Nam Yongjo Park 《Solid State Communications》2001,120(12):509-514
The optical properties and recombination kinetics of the InGaN/GaN double quantum well (DQW) structures with different well thickness (Lw) have been studied by means of photoluminescence (PL), time-resolved PL, and cathodoluminescence (CL) measurements. With increasing quantum well thickness up to 4 nm, the PL emission energy decreases and the blueshift of the PL emission energy increases with increasing excitation density. On the other hand, the PL emission energy of the DQWs with Lw=16 nm is higher than that of the DQWs with Lw=4 nm, and is independent of the excitation density. With increasing Lw from 1 to 4 nm, the PL decay times increase. In contrast, the decay times of 16 nm DQWs are faster than those of 4 nm DQWs. These different results for 16 nm DQWs such as the blueshift of the emission energy, the decrease of the excitation density dependence, and the increase of recombination rate can be ascribed to the relaxation of the piezoelectric field. We also observed the inhomegeneity in the CL spectra of the DQWs with Lw=1 nm on 1 μm scale. 相似文献
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针对基于马赫-曾德干涉仪结构的硅基光调制器中非线性电光响应的问题,采用包含PN结非线性调制损耗和非线性折射率变化的模型,通过数值仿真方法,研究了上下两臂对称和不对称两种情况下,调制损耗对硅基光调制器非线性的影响.对比考虑调制损耗和忽略调制损耗的模型,发现在常规大信号情况下,当光调制器偏置相位为0时,调制损耗使得三次谐波增强,四次谐波减弱;当光调制器偏置相位为π/2时,调制损耗使得二次和四次谐波增强;而在小信号情况下,三次和四次等高次谐波不明显,在光调制器偏置相位为0时,调制损耗在光调制器上下两臂不对称情况下增加了基频分量串扰;在光调制器偏置相位为π/2时,调制损耗的影响主要表现为增加了二次谐波分量. 相似文献
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C.R. Lu H.L. Liu C.H. Wu L.W. Sung 《Journal of Physics and Chemistry of Solids》2005,66(11):2082-2085
Optical properties of InGaAsN/GaAs and InGaAsN/GaAsN/GaAs quantum well structures with InGaP cladding layers were studied by photoreflectance at various temperatures. The excitonic interband transitions of the InGaAsN/GaAsN/GaAs QW systems were observed in the spectral range above hν=Eg(InGaAsN). The confinement potential of the system with strain compensating GaAsN barriers became one step broader, thus more quantum states and larger optical transition rate were observed. A matrix transfer algorithm was used to calculate the subband energies numerically. Band gap energies, effective masses were adopted from the band anti-crossing model with band-offset values adjusted to obtain the subband energies to best fit the observed optical transition features. A spectral feature below and near the GaAs band gap energy from GaAs barriers is enhanced by the GaAs/InGaP interface space charge accumulation induced internal field. 相似文献
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Jonathan Plumridge Edmund Clarke Ray Murray Chris Phillips 《Solid State Communications》2008,146(9-10):406-408
We study a semiconductor-based quantum metamaterial which has the optical characteristics of a metal in two directions, but behaves like a collection of artificial atoms, whose properties can be designed-in using quantum theory, in the third. We find that it supports a type of guided collective plasma resonance (CPR) mode which exhibits efficient optical coupling and long propagation distances. Furthermore, the coupling of the CPR mode with the ‘artificial atom’ transition leads to a case of “Ultra-Strong-Coupling”, demonstrated by a record vacuum Rabi splitting of 65 meV, a sizable fraction (42%), of the bare intersubband energy. 相似文献
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AbstractA review of optical-controlled modulators in terahertz regime is presented. Regular semiconductor materials and organic materials at the terahertz frequencies enable fascinating modulation behaviors, including frequency shift and phase and amplitude modulation, observed in devices of subwavelength dimensions. Modulation enhancement was realized by changing the carrier concentration of the local or whole surface in arrays of various structure cells involved with split-ring resonators, holes, and apertures. We also illustrate some new methods to realize modulation for electromagnetic waves. Optical-controlled modulators and the novel manipulation methods will find amazing applications in terahertz communication, imaging, and sensing. 相似文献
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The optical refractive index changes and absorption coefficients of quantum wells (QWs) are theoretically investigated with considering exciton effects within the framework of the fractional-dimensional space approach. The exciton wave functions and bound energies are obtained as a function of spatial dimensionality, and the dimension increases with the well width increasing. Then optical properties are obtained by using the compact-density matrix approach and an iterative method. Numerical results are presented for wurtzite ZnO/MgxZn1−xO QWs. The calculated results show that the changes of refractive index and absorption coefficients are greatly enhanced due to the quantum confinement of exciton. And the smaller the QW width (dimension) is, the larger influence of exciton on the optical properties will be. Furthermore, the exciton effects make the resonant peaks move to a lower energy. In addition, the optical properties are related to the QW width, the incident optical intensity and carrier density. 相似文献