单壁碳纳米管能带及其特性研究

本文利用紧束缚模型,推导了单壁碳纳米管中π电子的能带表达式,在此基础上着重分析了以下特性:找出了金属性和半导体性单壁碳纳米管的判据;采用等能线图,在布里渊区内描述了π电子的能量分布;计算了π电子在简约布里渊区具有高对称性点的有效质量.     

单壁碳纳米管的稳定性研究

采用化学气相沉积法(CVD),以正己烷为碳源制备单壁碳纳米管(SWNTs),研究了纯化后的单壁碳纳米管在空气中的稳定性,分别对刚纯化后和在空气中放置5d、10d和15d后的样品进行了SEM、HRTEM和TG表征,结果发现单壁碳纳米管的氧化程度随在空气中放置时间的延长而增加,15d后几乎完全转化为无定形碳.表明单壁碳管在空气中不稳定,很容易氧化,需要密闭保存.     

单壁碳纳米管场发射计算

本文以Maxwell电磁场理论为基础,对金属型单壁碳纳米管场发射阴极尖端附近的电场进行了计算,给出了不同结构单壁碳纳米管尖端附近的电场分布,发现场强沿管的径向及轴向方向随与管尖端距离的增加而迅速下降,说明了碳纳米管产生的激发场为极强的小范围局域场。通过计算不同几何尺寸单壁碳纳米管的场增强因子随其长度、半径的变化曲线,发现单壁碳纳米管的场增强因子数值非常大,并且根据曲线的变化规律可知,越细越长的单壁碳纳米管具有更大的场增强因子,同时也表明了单壁碳纳米管作为场发射阴极具有低的阈值和大的发射电流密度。本文所得结果为单壁碳纳米管做场发射材料提供了理论参考。     

单壁碳纳米管径向形变对介电常数和吸收光谱的影响

采用广义梯度近似方法中的PBE(J. Perdew、K.Burke和M. Ernzerhof)技术,对结构为(10,0)的锯齿型单壁碳纳米管在径向发生0.0～0.5扁率时的介电常数ε和光谱特性进行了理论研究.结果显示:(10,0)型单壁碳纳米管的径向形变对其介电常数峰值及光谱峰值的大小、位置和频率范围都有较大的影响.当入射光偏振方向垂直管轴时,介电常数峰值向低频区偏移,光谱峰值则依赖于初始位置.当入射光的偏振方向平行于管轴时,主要特征是介电常数幅值的变化和光谱范围的拓宽,同时,介电常数峰值向低频区偏移.     

单壁碳纳米管储氢密度计算与分析

借助于分子动力学方法,对单壁碳纳米管的储氢过程进行了模拟.根据得到的管内外H2分子的分布规律,计算了H2分子密度分布曲线,对其结果给出了理论分析和物理解释,提出了单壁碳纳米管储氢的多层吸附机制,定量地计算了碳纳米管储氢量(wt.;).这些为进一步研究单壁碳纳米管储氢问题提供了必要的理论依据.     

气体流量对热解火焰法合成碳纳米管的影响

采用热解火焰法制备了碳纳米管,研究了不同气体流量对碳纳米管制备的影响.结果表明:He流量变化会对碳纳米管形态产生影响,CH4、H2流量变化对碳纳米管形态影响不大;He、H2、CH4流量变化会影响碳纳米管的产量,当He、H2、CH4流量比2∶3∶6时,碳纳米管产量最高且产物主要是单壁、双壁、三壁碳纳米管.     

热解火焰法合成碳纳米管:催化剂与合成环境的影响

以CO为碳源,通过氧炔焰形成热解火焰合成了碳纳米管.为了详细研究催化剂与合成环境对合成产物的影响,实验分别应用不同催化剂在不同合成环境中进行取样分析.结果表明:催化剂颗粒尺寸直接决定合成产物的种类,不同产物对合成温度也有不同要求,过高温火焰环境会遏制碳纳米管的合成.最终得出,Fe/Mo/Al2O3载体催化剂适合在热解腔内部830℃无氧的环境下催化合成小直径的单壁、双壁和三壁碳纳米管,而由Fe(CO)5热解-附着-聚合产生的Fe催化剂颗粒适合在600℃的V型体火焰中催化合成大直径多壁碳纳米管.     

单壁碳纳米管的电子结构与声子谱的第一性原理计算

针对三种结构类型的单壁碳纳米管的电子结构和声子谱,采用基于密度泛函理论的第一性原理以及CASTEP软件进行了理论计算.在完成建模和结构优化的基础上,对扶手椅型(10,10)、锯齿型(6,0)和螺旋型(4,2)单壁碳纳米管的电子能带及电子态密度、声子谱及声子态密度进行了理论计算,并对计算结果进行了理论分析.结果表明:(10,10)及(6,0)单壁碳纳米管无能量禁带,它们属于金属型管;而(4,2)单壁碳纳米管有一宽度为0.85 eV的能量禁带,它属于半导体型管.以上计算结果与用其它判据给出的结论相一致.在以上三种管的声子谱中,它们依次有120条、72条和168条(其中有简并情况)色散曲线,并且它们的声子态密度依次在频率41.88 THz、23.95THz和23.43 THz处出现最大值,即在这些频率附近的格波最多.这一计算结果与物理规律是一致的.     

非手性型单壁碳纳米管的对称性分析

碳纳米管有着奇特的物理性质和化学性质,该性质与其特有的几何结构有着密切的关系.本文由点群理论出发,分析了非手性型即锯齿型(n,0)和扶手椅型(n,n)单壁碳纳米管所属的点群,并对这两种类型的单壁碳纳米管的对称元进行总结.分析出n为奇数与偶数时它分属两个不同的点群.并列举了n分别取6和5时(6,0),(6,6)与(5,0),(5,5)型单壁碳纳米管分别所属的点群为D6h和D5d,并给出相应的特征标表.     

取样时间和碳源气体流量对火焰法催化裂解乙烯制备碳纳米管的影响

采用火焰法,并使用Fe/Mo/Al2O3型载体催化剂,催化裂解乙烯制备了碳纳米管,并对取样时间和乙烯气体流量进行了实验探究.结果表明:取样温度保持1000℃,He和H2气体流量保持为经验配比He∶H2=2∶3时,取样时间越长,生成的碳纳米管数量也越多,而取样时间达到7 min时,碳纳米管的数量已经基本稳定;乙烯气体流量为0.2 L/min时,生成的碳纳米管在质量和数量上都达到较佳,乙烯流量偏低或者偏高都不利于碳纳米管的生成;实验中制备的碳纳米管以双壁或者少壁的多壁碳纳米管为主,没有单壁碳纳米管生成.     

Gas Storage in Single-Walled Carbon Nanotubes

Abstract

X-ray diffraction (XRD) and electrical resistance measurement on single-walled carbon nan-otube (SWNT) samples prepared by the arc-discharge method are reported. The XRD profile of heat-treated sample indicated that air (oxygen, and/or nitrogen and/or water) can be condensed inside the SWNTs. We also found that the electrical resistance of SWNT soot is significantly affected by exposing to the oxygen gas and humid air.     

Resonance Raman Scattering of Br2 Doped Single-Walled Carbon Nanotube Bundles

Abstract

We have measured Raman spectra of bromine doped single-walled carbon nanotubes (SWNTs) using various laser lines to clarify the electronic states of the doped SWNT. In the case of evacuated sample after full doping, two breathing mode peaks were observed simultaneously by visible laser excitations. We assigned the higher frequency peak to the doped SWNT bundles, and the other peak to the undoped portions in the sample. Intensity ratio between them decreased with decreasing excitation energy, and in the infrared region, the breathing mode band of the doped bundle was not observed. These results can be explained by a simple rigid band model.     

单壁碳纳米管储氢过程的GULP模拟

利用GULP软件的蒙特卡罗模块对常温(T=300 K)下单壁碳纳米管(SWNT)管内物理吸附储氢进行了模拟.研究和讨论了5种半径的扶手椅管在T=300 K时的吸附等温线,给出了同一管径在不同压强下氢气分子在碳纳米管中分布变化的对比图,并对T=300 K,P=10 MPa时不同管径的碳纳米管储氢能力进行了对比.结果显示,常温下压强不大于10 MPa时单壁碳纳米管吸附氢气的质量储氢容量不超过1.8;,体积吸附量不超过22 kg·m-3,表明纯单壁碳纳米管具有一定的吸附氢气的能力,但其存储能力与美国能源部提出的研究目标尚有一定差距,还需通过改变碳纳米管的结构、特性等方法来改善其储氢特性.     

Doping of Carbon Nanotubes by Heavy Alkali Metals

Abstract

Multiwall (MWNT) and single wall (SWNT) carbon nanotubes were intercalated with heavy alkali metals. From the point of view of their composition, alkali 2D superlattice, EPR and ¹³C NMR characteristics, the intercalation compounds of MWNT (1^st and ^2nd stage) are close to their parent GIC. An expansion of the 2D triangular lattice of SWNT bundles was clearly detected, showing that the alkali atoms are intercalated in the free space between the tubes.     

Propagation of elastic waves near acoustic axes in crystals under the action of extreme external forces: II. Centrosymmetric crystal in an electric field; III. Crystal under mechanical stress

The problem of degeneracy of elastic waves propagating in the vicinity of acoustic axes in centrosymmetric crystals in an external electric field and in crystals with arbitrary symmetry under uniaxial mechanical stress is considered. For the case of acoustic axes coinciding in the absence of external forces with the symmetry axes, equations describing the directions of external forces at which the difference in the velocities of initially degenerate transverse waves or angles of splitting and shift of the initial degeneracies reach maximum values are obtained. By the example of acoustic axes in LiNbO₃, La₃Ga₅SiO₁₄, Bi₁₂SiO₂₀, and SrTiO₃ crystals, extreme directions of uniaxial mechanical stress and the corresponding changes in the characteristics of transverse waves are calculated. The behavior of acoustic axes under uniaxial compression is analyzed.     

Dependence of the reflection high-energy electron diffraction oscillation shape on the molecular migration time and the oscillation period

Binominal expressions for the reflection high-energy electron diffraction (RHEED) oscillations during the growth of thin films by molecular beam epitaxy (MBE) were investigated. The dependence of the RHEED oscillation shape on the molecular migration time and the oscillation period was analyzed quantitatively. The peaks and valleys in the calculated oscillation intensities as a function of the oscillation period were in qualitatively reasonable agreement with those obtained from the experimental data. These results can help in controlling the epitaxial film thickness in the growth of films by using the MBE technique.     

Vibrational states and disorder in continuously compressed model glasses

We present in this paper a numerical study of the vibrational eigenvectors of a two-dimensional amorphous material, previously deeply studied from the point of view of mechanical properties and vibrational eigen-frequencies [7], [8], [9] and [10]. Attention is paid here to the connection between the mechanical properties of this material in term of elastic heterogeneities (EH), and how these inherent heterogeneous structures affect the vibrational eigenvectors and their plane waves decomposition. The systems are analysed for different hydrostatic pressures, and using results from previous studies, a deeper understanding of the boson peak scenario is obtained. The vibrational spectrum of a continuously densified silica glass is also studied, from which it appears that the pulsation associated with the boson peak follows the same pressure dependence trend than that of transverse waves with pulsation associated with the EH characteristic size.     

ZnGeAs2多晶合成与表征

ZnGeAs2是黄铜矿结构的三元化合物半导体材料,在红外非线性光学方面有重要应用前景.本文探讨了ZnGeAs2多晶的形成途径和合成机理,报道了一种ZnGeAs2多晶合成方法.以高纯(6N)Zn、Ge、As单质为原料,按化学计量比,富Zn1‰和As2‰配料,采用双温区合成方法,辅以机械、温度振荡和梯度降温的合成工艺,合成出均匀致密的单相ZnGeAs2多晶.经XRD和EDS分析表明:合成产物为黄铜矿结构的单相ZnGeAs2多晶,晶胞常数为a=b=0.56745 nm,c=1.11580 nm,与标准PDF卡片(No.730397)一致;各组成元素的原子比Zn∶Ge∶AS=1.00∶0.98∶1.95,接近理想化学计量比.上述分析结果表明,合成产物可用于ZnGeAs2单晶生长,为进一步研究ZnGeAs2晶体的非线性光学性能和应用奠定了较好的基础.     

AgGa1-xInxSe2单晶的生长研究

采用高纯(99.9999;)Ag、Ga、In和Se单质为原料,按化学计量比富Se0.3～0.5;配料,通过机械振荡和温度振荡相结合的方法合成出单相高致密AgGa1-xInxSe2多晶材料.以此为原料采用布里奇曼法生长出外观完整的尺寸为φ15mm×25mm的AgGa1-xInxSe2单晶锭(x=0.2).沿自然显露面对晶体进行了解理和X射线衍射分析,发现该面是(101)面.同时进行了红外透过率测试,其红外透过率为41;.     

Sub-Tg mechanical relaxation of a La55Al25Ni20 amorphous alloy

Dynamic mechanical properties of an amorphous La₅₅Al₂₅Ni₂₀ alloy were measured by a forced oscillation method in the temperature range from room temperature to 453 K, just below the glass transition temperature (T_g = 481 K). The internal friction at a constant frequency 62.8 rad/s of this alloy showed a peak at about 400 K and the peak position shifts with frequency. Structural relaxation reduces the magnitude of the relaxation peak but has little affect on the peak position. Using the time-temperature superposition process, master curves for storage E′ (ln ω) and loss E″ (ln ω) moduli are constructed. Activation energy of the relaxation obtained from shift factors is low, 100 kJ/mol, which is close to that for diffusion of the Al in Al and Ni in Al. The relaxation spectra are very broad with a half width of 2 3 decades.