Some properties of luminescence lifetimes from quartz stimulated by blue light

Abstract

Measurements have been made of recombination lifetimes as a function of stimulation time in quartz, a natural dosimeter. Time-resolved luminescence techniques were used to study the influence on lifetimes of sustained 470nm optical stimulation of luminescence and modifications associated with beta irradiation of samples. Results are reported for samples differing in sensitivity to luminescence stimulation.     

Temperature dependence of luminescence lifetimes in quartz under pulsed blue light stimulation

Abstract

The effect of increased thermal exposure on lifetimes during optical stimulation of luminescence was investigated in quartz over the temperature range 20—200°C. It is shown using a series of constant and dynamic temperature experimental data that lifetimes are strongly affected by temperature. Lifetimes change from about 30 μs at 20°C to about 7 μs at 200°C.     

The influence of optical bleaching on lifetimes and luminescence intensity in the slow component of optically stimulated luminescence of natural quartz from Nigeria

The intensity of optically stimulated luminescence may be decreased to a slow or medium component of its decay curve by optical bleaching, that is, by prolonged exposure of the luminescent sample to stimulating light. In this paper, we report on the influence of irradiation and measurement temperature on luminescence lifetimes as well as on the effect of measurement temperature on luminescence intensity in annealed natural quartz from Nigeria. Measurements were carried out in the slow component region using time-resolved optical stimulation at 470 nm on samples annealed at 500 and 600 °C. Luminescence lifetimes were determined from the resultant time-resolved luminescence spectra by analysing the portion of each spectrum after the stimulating light pulse of duration 11 μs. In preparatory tests, the influence of the duration of optical bleaching on lifetimes was investigated. It was found that lifetimes in samples annealed at 500 °C are independent of the duration of optical bleaching, whereas lifetimes in quartz annealed at 600 °C are affected, decreasing towards a constant value with duration of bleaching. Concerning measurements in the slow-component region, lifetimes were found to decrease with irradiation dose for samples annealed at either 500 or 600 °C. The temperature dependence of lifetimes in both sets of quartz is similar with lifetimes constant at about 36 μs between 20 and 120 °C, but decreasing consistently from then on to about 5 μs at 200 °C, the maximum measurement temperature used in experiments. The luminescence intensity was observed to typically go through a peak as the stimulation temperature was increased from 20 to 200 °C, following a brief initial decrease, a change better exemplified in the quartz annealed at 600 °C. The initial decrease in luminescence intensity is attributed to the dominance of optical stimulation over thermal stimulation. On the other hand, the subsequent change of luminescence intensity with temperature is discussed as evidence of thermal assistance to optical stimulation, initially with activation energy of 0.27±0.07 eV and of thermal quenching subsequently with activation energy equal to 0.93±0.23 eV for samples annealed at either 500 or 600 °C. The temperature dependence of lifetimes is explained as showing increased thermal effect on lifetimes with activation energy values within 0.83±0.01 eV. On the other hand, the influence of irradiation on lifetimes is accounted for in terms of an energy band model for quartz consisting of three luminescence centres and one non-radiative recombination centre.     

OSL and TL in TLD-100 following alpha and beta irradiation: Application to mixed-field radiation dosimetry

The optically stimulated luminescence (OSL) of LiF:Mg,Ti (TLD-100) following irradiation by beta and alpha particles was investigated by measurement of the excitation and emission spectra of OSL and comparison with thermoluminescence (TL) characteristics. The OSL excitation spectra of all the samples following both beta and alpha irradiation are very similar.Identical emission bands with very similar relative intensities following both beta irradiation and alpha particle irradiation have been recorded in the OSL induced in nominally pure LiF mono and TLD-100 polycrystals. The identical excitation and emission bands in the doped and pure crystals are strong evidence indicating that the observed OSL is due to an intrinsic trapping structure. The OSL has indeed been previously attributed to F₂ centers and F₃⁺ centers.The preferential excitation of OSL compared to TL following high ionisation density (HID) alpha irradiation is naturally explained via the identification of OSL with the “two-hit” F₂ or F₃⁺ center, whereas the major component of composite TL glow peak 5 is believed to arise from a “one-hit” complex defect. This discovery allows near-total discrimination between HID radiation and low ionisation density (LID) radiation and may have significant potential in mixed-field radiation dosimetry.     

Phonon lifetimes in fused quartz at low temperatures

Thermal Brillouin scattering from fused quartz has been observed with high resolution at low temperatures. At 2.4 K the longitudinal phonons of ν = 33 GHz are very well-defined excitations, with a lifetime of (2.0±.2)×10^-7 sec. This value is in substantial disagrement with those reported by Pelous and Vacher¹.     

Recombination luminescence lifetimes and the self-trapped excition in alkali halides

The decay of recombination luminescence in undoped KI and RbI at low temperatures has been measured following pulsed excitation by two-photon absorption and other methods. Several distinct exponential components are observed whose decay times vary with temperature. The most notable case is the principal component of the intrinsic luminescence in KI, whose decay time increases exponentially from 2 μsec at 12 K to 280 μsec at 1.38 K. The data are accounted for in terms of changing populations within a zero-field-split triplet state of the self-trapped excition. Evidence concerning the origin of a second luminescent triplet state in KI, RbI, and CsI is discussed; this state is similar to those of the self-trapped excition, but may involve an extrinsic perturbation.     

Relative response of TL and component-resolved OSL to alpha and beta radiations in annealed sedimentary quartz

Knowledge of the relative luminescence response to alpha and beta radiation is very important in TL and OSL dating. In the present study the relative alpha to beta response is studied in a sedimentary quartz sample, previously fired at 900 °C for 1 h, in the dose region between 1 and 128 Gy, for both thermoluminescence (TL) and linearly modulated optically stimulated luminescence (LM – OSL). The LM – OSL measurements were performed at room temperature and at 125 °C. All OSL signals were deconvolved into their individual components. Comparison of OSL curves after alpha and beta irradiation strongly supports that quartz OSL components follow first order kinetics in both cases. In the case of TL, the relative alpha to beta response is found to be very different for each TL glow-peak, but it does not depend strongly on irradiation dose. In the case of LM – OSL measurements, it is found that the relative behaviour of the alpha to beta response is different for three distinct regions, namely the fast OSL component, the region of medium OSL component originating from the TL glow-peak at 110 °C when stimulation takes place at room temperature and finally the region of slow OSL component. Following stimulation at ambient temperature, the relative alpha to beta response of all components was not observed to depend significantly on dose, with the value of ratio being 0.03 and a tendency to decrease with increasing dose. However, in the case of measurements performed at 125 °C, the relative response of the fast components is much enhanced, and for the remaining components it increases with increasing dose. Special care must be taken to examine the relative alpha to beta response of the fast component at 125 °C which contrasts the relative response of the TL peak at ca. 325 °C. The implications for the dating of annealed quartz are also briefly discussed.     

Electrical characterization of defects introduced in n-GaAs by alpha and beta irradiation from radionuclides

We investigated defect production in n-type GaAs with two different free-carrier densities (4×10¹⁴ and 1×10¹⁶/cm³) by using particles liberated from radionuclides. ⁹⁰Sr and ²⁴¹Am were employed as beta and alpha sources, respectively. The results obtained for electron irradiation showed that the same set of primary defects can be produced by beta irradiation from the Sr source as by electrons produced in an accelerator. Similarly, the defects produced by alpha irradiation from the Am source closely resemble those introduced by alpha irradiation in a Van de Graaff accelerator. It was found that the relative concentrations of the primary defects in electron-irradiated GaAs are different to those in alpha-particle irradiated GaAs. Further, for the first time, an alpha irradiation induced defect which seems to be related to the doping concentration was observed in the 10¹⁶/cm³ Si doped GaAs. It is concluded that the use of radionuclides is an inexpensive and convenient method to introduce and to study radiation induced defects in semiconductors.     

Identifying well-bleached quartz using the different bleaching rates of quartz and feldspar luminescence signals

When dating older sedimentary deposits using quartz, there are no unambiguous methods for identifying the presence of incomplete bleaching. Current statistical analysis of dose distributions depends entirely on the assumption that incomplete bleaching and mixing are the main causes of any excess dispersion in the distribution; the only existing way to test this assumption is using independent age control. Here we suggest a new approach to this question, based on the differential bleaching rates of quartz and feldspar luminescence signals. We first present data that confirm the differences in relative bleaching rates of quartz optically stimulated luminescence (OSL) and feldspar luminescence stimulated at 50 °C by infrared light (IR₅₀) and feldspar luminescence stimulated at 290 °C by infrared light after a stimulation at 50 °C (pIRIR₂₉₀), and use recently deposited samples to determine the likely significance of the difficult-to-bleach residual feldspar signals in non-aeolian samples. For a set of mainly Late Pleistocene non-aeolian sediments, large aliquot quartz doses are then used to predict feldspar doses (based on a knowledge of the sample dose rates). The differences between observed and predicted feldspar doses as a function of the quartz dose, combined with a conservative assumption concerning the relative feldspar and quartz residual signals after natural bleaching prior to deposition, are used to identify those samples for which the quartz is very likely to be well bleached (20 out of 24). Two of these apparently well-bleached samples are then examined using single-grain quartz dose distributions; one of these is consistent with the well-bleached hypothesis, and one indicates poor bleaching or a multi-component mixture. However, independent age control makes it clear that the large aliquot data are more likely to be correct. We conclude that a comparison of quartz and feldspar doses provides a useful independent method for identifying well-bleached quartz samples, and that it is unwise to apply statistical models to dose distributions without clear evidence for the physical origins of the distributions.     

Principal and secondary luminescence lifetime components in annealed natural quartz

Time-resolved luminescence spectra from quartz can be separated into components with distinct principal and secondary lifetimes depending on certain combinations of annealing and measurement temperature. The influence of annealing on properties of the lifetimes related to irradiation dose and temperature of measurement has been investigated in sedimentary quartz annealed at various temperatures up to $900{}^{\circ }\mathrm{C}$. Time-resolved luminescence for use in the analysis was pulse stimulated from samples at 470 nm between 20 and $200{}^{\circ }\mathrm{C}$. Luminescence lifetimes decrease with measurement temperature due to increasing thermal effect on the associated luminescence with an activation energy of thermal quenching equal to $0.68\pm 0.01\mathrm{eV}$ for the secondary lifetime but only qualitatively so for the principal lifetime component. Concerning the influence of annealing temperature, luminescence lifetimes measured at $20{}^{\circ }\mathrm{C}$ are constant at about $33\mathrm{\mu }\mathrm{s}$ for annealing temperatures up to $600{}^{\circ }\mathrm{C}$ but decrease to about $29\mathrm{\mu }\mathrm{s}$ when the annealing temperature is increased to $900{}^{\circ }\mathrm{C}$. In addition, it was found that lifetime components in samples annealed at $800{}^{\circ }\mathrm{C}$ are independent of radiation dose in the range 85–1340 Gy investigated. The dependence of lifetimes on both the annealing temperature and magnitude of radiation dose is described as being due to the increasing importance of a particular recombination centre in the luminescence emission process as a result of dynamic hole transfer between non-radiative and radiative luminescence centres.     

Excitation and emission spectrometry of stimulated luminescence from quartz and feldspars

A new scanning monochromator was designed to investigate the wavelength-resolved luminescence excitation and emission characteristics of quartz and feldspar samples; results are presented, together with detailed measurements of the thermal activation energies required for luminescence stimulation in feldspar over the wavelength range 400–1000 nm. When coupled to automated dating equipment, we demonstrate that optical characteristics of samples selected for dating can be routinely measured, or more detailed analysis of physical processes can be made.     

The decay of luminescence in natural and silver-doped quartz after X-ray excitation

It is well known that X-rays cause luminescence in quartz. This luminescence consists of two broad bands at 2.5 and 3.3 eV. After X-ray excitation natural quartz has an afterglow. The duration of this afterglow and the intensity of the emitted light show a strong dependence on the temperature of the sample. While the intensity is not so reproducible, the duration of the afterglow has a clear temperature- dependence and can be connected with two electron-traps in the customary band model — one with a depth of 8 meV and the other with 260 meV — using an Arrhenius-plot. If the quartz crystal has been doped with silver by electro-diffusion, additional luminescence bands at 2.2 eV and around 5 eV occurs. The latter broad luminescence band consists of a dominant part with a decay-time of 40 μsec at 4.8 eV and a weak band at 5.4 eV without afterglow. In contrast to natural quartz, the luminescence intensity as well as the decay-time in the silver-doped sample is independent of the temperature in the range 77–300 K. This constant afterglow is associated with partially forbidden transitions in the silver dopant and energy-transfer to the luminescence centres. In the suggested luminescence model, the observed luminescence bands are connected with an energy transition in the silver.