A thermal model for insulated gate bipolar transistor module

A thermal resistor-capacitor (RC) model is introduced for the power insulated gate bipolar transistor (IGBT) modules used in a three-phase inverter. The parameters of the model are extracted from the experimental data for the transient thermal impedance from-junction-to-case Z/sub jc/ and case-to-ambient Z/sub ca/. The accuracy of the RC model is verified by comparing its predictions with those resulting from the three-dimensional finite element method simulation. The parameter extraction algorithm is easy to adapt to other types of power modules in an industrial application environment.     

一个适用于极低温的宽温度范围子电路MOSFET模型

本文描述了一个适用于低温下的MOSFET子电路SPICE模型。其中引入了两个电阻用于描述冻析效应,并开发了这两个电阻的解析的行为模型。该模型在从极低温到常温的较宽的温度范围内均适用。     

一种新N型射极势垒绝缘栅双极晶体管

本文提出了一种新N型射极势垒绝缘栅双极晶体管。该器件用N型轻掺杂区代替传统的P+区形成空穴势垒,以阻止寄生PNP晶体管空穴分流,从而增强电导调制效应。仿真验证结果显示,该器件对比传统沟槽IGBT,其电流密度和关断损耗分别增加和降低了49%和25%,同时具有相似的击穿电压、关断时间和雪崩能量。此外,该器件具有无限大的跨导,有利于开通和关断。因此,该器件可应用于高压大功率电力电子系统。     

A sub-circuit MOSFET model with a wide temperature range including cryogenic temperature

A sub-circuit SPICE model of a MOSFET for low temperature operation is presented.Two resistors are introduced for the freeze-out effect,and the explicit behavioral models are developed for them.The model can be used in a wide temperature range covering both cryogenic temperature and regular temperatures.     

An insulated gate bipolar transistor employing the plugged n anode

A vertical Insulated Gate Bipolar Transistor, entitled CB-IGBT(Carrier-inducing Barrier-controlled IGBT) has been proposed and verified by a two-dimensional numerical simulation. The structure of the proposed device is almost identical with that of the conventional IGBT, except for the anode structure in which the p-barrier region and n⁺ anode region are employed. In the CB-IGBT, the potential barrier height at the junction between the p-barrier region and n-drift region is controlled by the amount of carriers, so that the trade-off relation between the on-state voltage drop and the switching speed is decoupled efficiently. The switching speed of CB-IGBT is so much enhanced with a negligible increase of the on-state voltage drop, since electrons stored in the n-drift region can be extracted rapidly into the n⁺ anode via p-barrier region during turn-off process.     

A novel high performance insulated gate bipolar transistor

For the first time, a new concept of LDE-IGBT (local drift-region enhanced IGBT) is proposed and verified by two-dimensional (2D) device-circuit mixed simulations. The structure of the proposed device is almost identical to that of the conventional IGBT, except for an additional n⁺ plugged region under the gate contact. The proposed device exhibits larger maximum operating current, meaning higher current capability, which is expected for high-power operation. The simulation results indicate the LDE-IGBT can obtain a low on-state voltage drop with negligible increase of turn-off time due to lower sensitivity of turn-off time to the novel structure. Therefore, the trade-off relation between on-state voltage and turn-off time is improved and decoupled efficiently. Finally, the effects of three novel structure parameters on the on-state voltage are demonstrated in detail.     

Application of insulated gate bipolar transistor to zero-currentswitching converters

The problems associated with insulated-gate bipolar transistor (IGBT) devices in PWM converters, such as turn-off current tailing and turn-off latching, are largely avoided in zero-current switching resonant converters. Phenomena induced by dv/dt, such as the power losses and latching, are identified as the predominant problems in using IGBT devices for very-high-frequency resonant operations. The discussion and the verification of the results presented are focused on buck-type converters in the zero-current switching family     

SiGe-collector trench gate insulated gate bipolar transistor fabricated using multiple target sputtering

A new type of trench gate IGBT (insulated gate bipolar transistor) which uses a SiGe layer for the collector is experimentally investigated. SiGe collectors with different Ge content are deposited by multiple cathode sputtering making low temperature processing possible. The change in turn-off characteristics with Ge content is also investigated. Results indicate that the use of a SiGe collector reduces the tail current at turn-off due to the reduced injection of holes to the n⁻ drift region.     

High-speed electro-thermal modelling of a three-phase insulated gate bipolar transistor inverter power module

In this article, a high-speed electro-thermal (ET) modelling strategy to predict the junction temperature of insulated gate bipolar transistor (IGBT) devices of a three-phase inverter power module is presented. The temperature-dependent power loss characteristics of IGBT and diode devices are measured and stored in lookup tables, which replace the conventional complicated physics-based compact models. An inverter is modelled as a voltage controlled voltage source, which allows the inverter-based power train simulation to be carried out in the continuous time domain with a large simulation time-step (1 ms). Using the simulated sinusoidal voltage and current components of the inverter output, the given pulse width modulation mode, the conduction time (duty ratio) and the current of the devices are extracted. Based on the lookup tables, on-times and conduction currents of devices, the average power loss over each simulation time-step is calculated, which is then fed into the inverter thermal model to predict the devices' temperatures. The advantage of the proposed model is that an accurate ET simulation of inverter for long real-time (many minutes) operation can be carried out within an acceptable computational time using a standard modern personal computer. Both simulation and experimental validation have been carried out, and an excellent agreement has been achieved between the simulation and experimental data.     

A high-conductivity insulated gate bipolar transistor with Schottky hole barrier contact

This letter proposes a high-conductivity insulated gate bipolar transistor (HC-IGBT) with Schottky contact formed on the p-base, which forms a hole barrier at the p-base side to enhance the conductivity modulation effect. TCAD simulation shows that the HC-IGBT provides a current density increase by 53% and turn-off losses decrease by 27% when compared to a conventional field-stop IGBT (FS-IGBT). Hence, the proposed IGBT exhibits superior electrical performance for high-efficiency power electronic systems.     

A multi-attribute classification fusion system for insulated gate bipolar transistor diagnostics

Effective health diagnosis provides benefits such as improved safety, improved reliability, and reduced costs for the operation and maintenance of complex engineered systems. This paper presents a multi-attribute classification fusion system which leverages the strengths provided by multiple membership classifiers to form a robust classification model for insulated gate bipolar transistor (IGBT) health diagnostics. The developed diagnostic system employs a k-fold cross-validation model for the evaluation of membership classifiers, and develops a multi-attribute classification fusion approach based on a weighted majority voting with dominance scheme. An experimental study of IGBT degradation was first carried out for the identification of failure precursor parameters, and classification techniques (e.g., supervised learning, unsupervised learning, and statistical inference) were then employed as the member algorithms for the development of a robust IGBT classification fusion system. In this study, the developed classification fusion model based on multiple member classification algorithms outperformed each stand-alone method for IGBT health diagnostics by providing better diagnostic accuracy and robustness. The developed multi-attribute classification fusion system provides an effective tool for the continuous monitoring of IGBT health conditions and enables the development of IGBT failure prognostics systems.     

A novel trench clustered insulated gate bipolar transistor (TCIGBT)

A new trench clustered insulated gate bipolar transistor (TCIGBT) is reported. In this device, a multitude of UMOS cathode cells is enclosed within a common n-well and p-well. The TCIGBT provides a unique "self-clamping" feature to protect the trenches from high electric fields. The simulation results based on 1.2 kV nonpunchthrough technology indicate an improvement of 25% in on state and 28% in the turn-off losses in comparison to the state-of-the-art trench IGBT. The saturation current levels of the TCIGBT, which can be designed independent of the forward drop, are also lower.     

一种积累型沟道的半超结结构绝缘栅双极型晶体管

A high performance trench insulated gate bipolar transistor which combines a semi-superjunction struc- ture and an accumulation channel （sSJTAC-IGBT） is proposed for the first time. Compared with the TAC-IGBT, the new device not only retains the advantages of the accumulation channel, but also obtains a larger breakdown voltage （BV）, a faster turn-off speed and a smaller saturation current level while keeping the on-state voltage drop lower as the TAC-IGBT does as well. Therefore, the new structure enlarges the short circuit safe operating area （SCSOA） and reduces the energy loss during the turn-off process.     

具有反并联MCT的新型RC-IGBT

Novel reverse-conducting IGBT （RC-IGBT） with anti-parallel MOS controlled thyristor （MCT） is proposed. Its major feature is the introduction of an automatically controlled MCT at the anode, by which the anodeshort effect is eliminated and the voltage snapback problem is solved. Furthermore, the snapback-free characteristics can be realized in novel RC-IGBT by a single cell with a width of 10 μm with more uniform current distribution. As numerical simulations show, compared with the conventional RC-IGBT, the forward conduction voltage is reduced by 35% while the reverse conduction voltage is reduced by 50% at J = 150 A/cm2.     

A novel multi-cell lateral insulated gate bipolar transistor in the DELDI technology

In this paper, a planar, multi-cell Lateral Insulated Gate Bipolar Transistor (MCLIGBT) in the Double Epitaxial Layer Dielectric Isolation (DELDI) technology is proposed. This novel device exhibits a quasi-vertical mode of operation to achieve a localized conductivity modulation in the sandwich region between the adjacent cathode cells. Detailed numerical analysis shows that the Kirk effect plays an important role in achieving such a localized conductivity modulation and a significantly enhanced on-state performance is achievable without affecting its switching and blocking capability. Furthermore, this device does not require additional fabrication steps to an existing high voltage CMOS process and, therefore, is highly cost and area efficient.     

The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device

A new three-terminal power device, called the insulated gate transistor (IGT), with voltage-controlled output characteristics is described. In this device, the best features of the existing families of bipolar devices and power MOSFET's are combined to achieve optimal device characteristics for low-frequency power-control applications. Devices with 600-V blocking capability fabricated using a vertical DMOS process exhibit 20 times the conduction current density of an equivalent power MOSFET and five times that of an equivalent bipolar transistor operating at a current gain of 10. Typical gate turn-off times have been measured to range from 10 to 50 µs.     

Channel shape in a insulated gate field-effect transistor

By defining the channel thickness of an IGFET in terms of the total mobile charge in the channel, it is shown that the channel thickness decreases with increasing surface field and increases from source to drain, being undefined beyond the pinch-off point if the IGFET is operated in saturation.     

Analysis of insulated gate transistor turn-off characteristics

A model based upon a MOSFET driving a wide-base p-n-p transistor is presented for analysis of the turn-off behavior of n-channel insulated gate transistors. This model is found to provide a very good quantitative explanation of the shape of the collector current waveform during turn-off. Verification was accomplished using insulated gate transistors (IGT's) fabricated with two voltage ratings and a variety of radiation doses. This analysis allows the separation of the channel (electron) and minority carrier (hole) current flow in the IGT for the first time.     

Temperature behavior of insulated gate transistor characteristics

The Insulated Gate Transistor (IGT) is a new power semiconductor device with the high input impedance features of the power MOSFET and the ability to operate at high current densities even exceeding that of power bipolar transistors. The high temperature operating characteristics of the device are discussed here. Unlike the power MOSFET whose operating current density decreases by over a factor of 2 when the ambient temperature is raised to 150°C, the IGT is found to maintain its high operating current density at elevated temperatures. The temperature coefficient of the output current is found to be positive at forward drops below 1.5 V and negative at forward drops above 1.5 V. These characteristics make the IGT suitable for applications with high ambient temperatures. The results also indicate that these devices can be paralleled without current hogging problems if the forward conduction occurs at forward voltage drops in excess of 1.5 V.     

A new fault current-sensing scheme for fast fault protection of the insulated gate bipolar transistor

A new fault current-sensing scheme employing the floating p-well for fast protection of the insulated gate bipolar transistor (IGBT) from the short-circuit faults is proposed and verified by employing 2D mixed mode simulation, based on the previous experimental results. The proposed floating p-well current-sensing scheme detects not the normal operating current but the fault current of the main IGBT by using the diode connected MOSFET and a resistor, when the short-circuit fault occurs. The diode-connected MOSFET eliminates the degradation of the forward voltage drop, because the floating p-well current does not flow under the normal operating condition due to the threshold voltage of the diode connected MOSFET. The proposed current sensor increases the protection speed without any additional delay time by the external blanking filter.