Mechanisms of ZnO Luminescence in the Visible Spectral Region

Existing models of zinc oxide luminescence in the visible spectral region are considered and comparatively analyzed. Experiments are performed with ceramics obtained from initial ZnO powder and ZnO powders annealed in vacuum (ZnO-vac) and in air (ZnO-air). The luminescence characteristics of the ceramics, namely, emission and excitation spectra, kinetics, and temperature stability, are studied. The ZnO-vac ceramics exhibits green luminescence caused by neutral oxygen vacancies. The luminescence of ZnO-air ceramics is shifted to the red and is presumably related to residual lithium impurity. The ceramics differ in the luminescence excitation spectra, time characteristics, and temperature stability.     

TIME-RESOLVED PHOTOLUMINESCENCE OF SINTERED ZnO CERAMICS

The time-resolved photoluminescence (TRPL) of sintered ZnO ceramics was measured at low temperatures. A broad luminescence band was observed in the visible region. The TRPL experiment shows that photoluminescence decay behaviour can be depicted as t^-n(r). The decay rate n(r) and lifetime are wavelength dependent, and the former varies exponentially with wavelength. The power-lowering behaviour of the luminescence intensity indicates that the luminescence band originates from the recombination of donor-acceptor pairs.     

The luminescence of ZnO ceramics

The luminescence properties of ZnO ceramics with grains 100–5000 nm sintered by different techniques from nanopowders were studied. The luminescence decay times were compared with that obtained for ZnO single crystal. The temperature dependence of non-exponential decay of defect luminescence (2.0–2.6 eV) was measured in wide time, intensity and temperature range. The luminescence decay kinetic at T ≤ 20 K shows the decay close to I(t) ～ t^?1 dependence. At temperature region 50–250 K the decay kinetics is more complicate since the TSL was observed in this temperature region. It is shown that the luminescence properties of NP and ceramics strongly depend on defect distribution on grains surface and the volume/surface ratio determine the luminescence decay in ZnO nanostructures and ceramics.     

Investigation of up-conversion luminescence properties of RE/Yb co-doped Y2O3 transparent ceramic (RE=Er, Ho, Pr, and Tm)

RE/Yb co-doped Y₂O₃ transparent ceramics (RE=Er, Ho, Pr, Tm) were fabricated and characterized from the point of up-conversion luminescence. All the samples exhibit high transparence not only in near-infrared band (NIR) band but also in visible region, which ensures the output of the up-conversion luminescence. Under 980 nm excitation, green and red emissions were observed in Er, Yb:Y₂O₃ transparent ceramic, while green emission was detected in Ho, Yb and Pr, Yb co-doped Y₂O₃ transparent ceramics. In Tm, Yb co-doped Y₂O₃ ceramic, very intense blue up-conversion luminescence was detected. The dependence of up-conversion emission intensity on the pumping power was measured for each RE/Yb co-doped Y₂O₃ transparent ceramic, and the up-conversion mechanism was discussed in detail. Meanwhile, the energy transfer efficiency was calculated.     

Influence of annealing on the scintillation properties of zinc oxide powders and ceramics

It was shown that annealing ZnO and ZnO:Ga initial powders and ceramics in different atmospheres significantly changes the characteristics of the studied samples. Two main luminescence bands of different origins were observed in powders at 540 nm and 580 nm. Annealing either in vacuum or in Ar:H₂ atmosphere increased intensity of green luminescence with peak at 540 nm whereas annealing in air enhanced a luminescence band with peak at 580 nm in the powders. Corresponding changes in luminescence kinetic properties were observed. Annealing of the ceramics in vacuum and air did not affect the luminescence properties, while annealing them in Ar:H₂ atmosphere increased green luminescence intensity of undoped ceramics and excitonic luminescence intensity of doped ones. Comparison of the X-ray, gamma-ray and cathode-ray excited luminescence lead to conclusion that the enhancement of luminescence intensity took place in surface layer of about 100 μm thickness.     

Two-photon optical characteristics of zinc oxide in bulk, low dimensional and nanoforms

We report the two-photon luminescence (TPL) and second-harmonic generation (SHG) characteristics of zinc oxide (ZnO) in ceramic, thick film and nanorod. Sintering, physical vapour deposition (PVD), and hydrothermal methods were used in preparing the three forms of samples, respectively. Wide-band luminescence in the visible wavelength was observed with green/yellow emission in ceramic and nano-crystal, and blue emission in the film. We attributed interstitial zinc and interstitial oxygen for the luminescence at blue and green bands. Images acquired by TPL and SHG microscopy are presented, interpretation is provided for granular structure exhibiting strong SHG at granular boundaries.     

Optical and structural properties of ZnO nanorods grown by pulsed laser deposition without a catalyst

Pulsed laser deposition without a catalyst is used to grow ZnO nanorods less than 10 nm in diameter. The structure of the rods is studied by Raman scattering during excitation in the visible and UV regions. The temperature dependences of exciton spectra and the behavior of green luminescence are investigated in the temperature range 10–280 K. At room temperature, the luminescence intensity of the ZnO nanorods in the exciton region is higher than the green luminescence intensity by a factor of 7.8.     

A twice liquid arc discharge approach for synthesis of visible-light-active nanocrystalline Ag:ZnO photocatalyst

Ag:ZnO hybrid nanostructures were successfully prepared by a twice arc discharge method in liquid. The visible light photocatalytic activities were successfully demonstrated for the degradation of Rhodamine B (Rh. B), Methyl orange (MO), and Methylene blue (MB) as standard organic compounds under the irradiation of 90 W halogen light for 2 h. The Ag:ZnO nanostructures were characterized by X-Ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and ultraviolet-visible absorption spectroscopy (UV-Vis). The results revealed that the Ag:ZnO nanostructures extended the light absorption spectrum toward the visible region and significantly enhanced the Rh. B photodegradation under visible light irradiation. 3 mM Ag:ZnO nanostructures exhibited highest photocatalytic efficiency. It has been confirmed that the Ag:ZnO nanostructures could be excited by visible light (E<3.3 eV). The significant enhancement in the Ag:ZnO nanostructures photocatalytic activity under visible light irradiation can be ascribed to the effect of physisorbed noble metal Ag by acting as electron traps in ZnO band gap. A mechanism for photocatalytic degradation of organic pollutant over Ag:ZnO photocatalyst was proposed based on our observations.     

Luminescence of a ZnO:Ga crystal upon excitation in vacuum UV region

The spectral-kinetic characteristics of a ZnO:Ga single crystal upon excitation in the vacuum UV region have been studied. At a temperature of 8 K, the exciton luminescence line peaking at 3.356 eV has an extremely small half-width (7.2 meV) and a short decay time (360 ps). In the visible range, a wide luminescence band peaking at ～2.1 eV with a long luminescence time at 8 K and a decay time in the nanosecond range at 300 K is observed. The luminescence excitation spectra of ZnO:Ga have been measured in the range of 4–12.5 eV.     

Effect of point defects on luminescence characteristics of ZnO ceramics

Photo- and thermally stimulated luminescence of ZnO ceramics are produced by uniaxial hot pressing. The luminescence spectra of ceramics contain a wide band with a maximum at 500 nm, for which oxygen vacancies V_O are responsible, and a narrow band with a maximum at 385 nm, which is of exciton nature. It follows from luminescence excitation spectra that the exciton energy is transferred to luminescence centers in ZnO. An analysis of the thermally stimulated luminescence curves allowed detection of a set of discrete levels of point defects with activation energies of 25, 45, 510, 590 meV, and defects with continuous energy distributions in the range of 50–100 meV. The parameters of some of the detected defects are characteristic of a lithium impurity and hydrogen centers. The photoluminescence kinetics are studied in a wide temperature range.     

纳米ZnO薄膜的光致发光性质

利用溶胶－凝胶法制备了纳米ZnO薄膜,室温下测量了样品的光致发光谱(PL)、吸收谱(ABS)、X射线衍射谱(XRD)．X射线衍射(XRD)的结果表明：纳米ZnO薄膜呈多晶状态,具有六角纤锌矿晶体结构和良好的C轴取向．观察到二个荧光发射带,中心波长分别位于395 nm的紫带、524 nm的绿带和450 nm附近的蓝带．证实了纳米ZnO薄膜绿光可见发射带来自氧空位(VO)形成的浅施主能级和锌空位(VZn)形成的浅受主能级之间的复合;450 nm附近的蓝带来自电子从VO的浅施主能级到价带顶或锌填隙(Zni) 到价带顶或导带底到VZn的浅受主能级的复合．     

Photoinduced Effects in the ZnO Luminescence Spectra

The effect of intense UV irradiation on the photoluminescence (PL) spectra of ZnO powders and nanocrystalline films obtained by atomic layer deposition (ALD) was investigated. At room temperature, the behavior of the spectra under continuous UV irradiation in multiple vacuum-atmosphere cycles was studied. The changes in the intensities of exciton radiation and radiation in the “green” band region, associated with the phenomena of oxygen photodesorption and photoadsorption, are discussed. In the temperature range of 5–300 K, the effect of strong UV irradiation on the near-edge luminescence spectrum of ZnO films was studied. The nature of a new line arising in the photoluminescence spectra of an irradiated film in the region of emission of bound excitons is discussed.

     

Negative permittivity of ZnO thin films prepared from aluminum and gallium doped ceramics via pulsed-laser deposition

Aluminum and gallium doped zinc oxide thin films with negative dielectric permittivity in the near infrared spectral range are grown by pulsed laser deposition. Composite ceramics comprising ZnO and secondary phase Al₂O₃ or Ga₂O₃ are employed as targets for laser ablation. Films deposited on glass from dense and small-grained ceramic targets show optical transmission larger than 70 % in the visible and reveal an onset of metallic reflectivity in the near infrared at 1100 nm and a crossover to a negative real part of the permittivity at approximately 1500 nm. In comparison to noble metals, doped ZnO shows substantially smaller losses in the near infrared.     

White light luminescence from annealed thin ZnO deposited porous silicon

In this study, photoluminescence (PL) properties of annealed ZnO thin films deposited onto a porous silicon (PS) surface by rf-sputtering were investigated. A huge blue shift of luminescence from the ZnO deposited onto the PS surface and a broadband luminescence (white luminescence) across most of the visible spectrum were obtained after the heat treatment at 950 °C in air. The results of Fourier Transform Infrared Spectroscopy (FTIR) analysis suggested that the porous silicon surface was oxidized after ZnO deposition and the broadband luminescence was due to the conversion of Si-H bonds to Si-O-Si bonds on the PS surface. The underlying mechanisms of the broadband PL were discussed by using oxygen-bonding model for the PS and native defects model for ZnO. The experimental results suggested that the heat treatment provides a relatively easy way to achieve white luminescence from thin ZnO deposited porous silicon.     

Emission and excitation spectra of ZnO:Ga and ZnO:Ga,N ceramics

The spectral characteristics of ZnO:Ga and ZnO:Ga,N ceramics prepared by uniaxial hot pressing have been investigated. At room temperature, the edge (exciton) band at 3.12 eV dominates in the luminescence spectra of ZnO:Ga, while a wide luminescence band at 2.37 eV, which is likely to be due to zinc vacancies, is observed in the spectra of ZnO:Ga,N. Upon heating, the edge band maximum shifts to lower energies and the bandwidth increases. The extrapolated position of the edge-band maximum at zero temperature, E _m (0) = 3.367 ± 0.005 eV, is in agreement with the data for thin zinc oxide films. The luminescence excitation spectra in the range from 3 to 6.5 eV are reported and the mechanism of energy transfer to excitons and luminescence centers is considered.     

纳米晶ZnO可见发射机制的研究

利用化学沉淀法制备了纳米ZnO粉体,室温下测量了样品的光致发光谱(PL)、X射线衍射谱(XRD),给出了样品的透射电子显微照片(TEM).X射线衍射(XRD)的结果表明:纳米晶ZnO具有六角纤锌矿晶体结构,颗粒呈球形或椭球形.观察到二个荧光发射带,中心波长分别位于398 nm的紫带和510 nm的绿光带.发现随退火温度升高,粒径增大,紫带的峰值减弱、绿带的峰值增强.证实了纳米晶ZnO绿光可见发射带来自氧空位形成的施主和锌空位形成的受主之间的复合.     

Pulsed cathodoluminescence of nanoscale aluminum oxide with different phase compositions

The methods of pulsed cathodoluminescence have been used to study compacted powders and ceramics containing different phases of aluminum oxide. An intensive luminescence of the samples under study in the visible, NIR, and UV regions of the spectrum has been found. The luminescence bands are very broad and include a few components. The number of the bands depends on the phase composition of the samples. The oxygen vacancies, which capture one or two electrons, produce luminescence centers in the near UV region. The most probable in the visible region is the luminescence of aggregate defects, impurities, and surface centers.     

Effect of Mn doping on the structural and optical properties of sol-gel derived ZnO nanoparticles

Un-doped and Mn-doped ZnO nanoparticles were successfully synthesized in an ethanolic solution by using a sol-gel method. Material properties of the samples dependence on preparation conditions and Mn concentrations were investigated while other parameters were controlled to ensure reproducibility. It was observed that the structural properties, particle size, band gap, photoluminescence intensity and wavelength of maximum intensity were influenced by the amount of Mn ions present in the precursor. The XRD spectra for ZnO nanoparticles show the entire peaks corresponding to the various planes of wurtzite ZnO, indicating a single phase. The diffraction peaks of doped samples are slightly shifted to lower angles with an increase in the Mn ion concentration, signifying the expansion of the lattice constants and increase in the band gap of ZnO. All the samples show the absorption in the visible region. The absorbance spectra show that the excitonic absorption peak shifts towards the lower wavelength side with the Mn-doped ZnO nanoparticles. The PL spectra of undoped ZnO consist of UV emission at 388 nm and broad visible emission at 560 nm with varying relative peak intensities. The doping of ZnO with Mn quenches significantly the green emission while UV luminescence is slightly affected.     

Preparation of ZnO nanopowders by thermal plasma and characterization of photo-catalytic property

Nano-sized zinc oxide (ZnO) powders were prepared via a thermal plasma process from micro-sized zinc powder while oxygen was employed as a reaction gas. Two different carrier gases, oxygen and argon, were evaluated and the flow rate of the reaction gas was controlled. The photo-catalytic activities of ZnO powders were evaluated by measuring the degradation of methylene blue (MB) in water under the UV and visible region. The prevailing goal of this study is to improve the photo-catalytic activity of nano-sized ZnO powders for the removal of environmental pollutants. The ZnO nanopowders were characterized by XRD, SEM, BET, and UV-vis spectrometry. Their mean crystallites sizes ranged from 26.5 nm to 48.6 nm. It was confirmed by a XRD analysis that the ZnO nanopowders had a high quality wurtzite structure. SEM and XRD results show that the size of the particles synthesized increased with an increase of the flow rate of the oxygen reaction gas. The powder obtained using the argon carrier gas with higher oxygen reaction gas flow rate was more rod-shape. The MB decomposition rates of the obtained ZnO nanopowders were studied under the UV and visible region. In the UV region, synthesized ZnO could decompose MB as well as commercial ZnO. However, in the visible region, the MB decomposition rate obtained using ZnO was much higher than that by commercial ZnO.     

Al掺杂浓度对ZnO陶瓷释能电阻材料性能的影响

为了制备ZnO释能电阻并研究Al掺杂浓度对ZnO释能电阻材料的影响,通过改进的制陶工艺制备了不同Al掺杂浓度的ZnO导电陶瓷。实验结果表明,Al掺杂浓度对ZnO释能电阻的导电性、能量密度和线性度均有较大的影响。Al的掺杂能较好地改善ZnO释能电阻的线性度,非线性系数可低至1.02;Al掺杂能很好地控制ZnO的电阻率,使其达到0.54 Ω·cm;Al掺杂还能较好地改善ZnO陶瓷的均匀性和密度,从而提高ZnO释能电阻的能量吸收密度,能量吸收密度高达720 J/cm³,较金属释能材料高出2~3倍。