Relaxation-time limit of the multidimensional bipolar hydrodynamic model in Besov space

In this paper, we study a multidimensional bipolar hydrodynamic model for semiconductors or plasmas. This system takes the form of the bipolar Euler-Poisson model with electric field and frictional damping added to the momentum equations. In the framework of the Besov space theory, we establish the global existence of smooth solutions for Cauchy problems when the initial data are sufficiently close to the constant equilibrium. Next, based on the special structure of the nonlinear system, we also show the uniform estimate of solutions with respect to the relaxation time by the high- and low-frequency decomposition methods. Finally we discuss the relaxation-time limit by compact arguments. That is, it is shown that the scaled classical solution strongly converges towards that of the corresponding bipolar drift-diffusion model, as the relaxation time tends to zero.     

Threshold condition for global existence and blow-up to a radially symmetric drift-diffusion system

For a class of drift-diffusion systems Kurokiba et al. [M. Kurokiba, T. Nagai, T. Ogawa, The uniform boundedness and threshold for the global existence of the radial solution to a drift-diffusion system, Commun. Pure Appl. Anal. 5 (2006) 97-106.] proved global existence and uniform boundedness of the radial solutions when the L₁-norm of the initial data satisfies a threshold condition. We prove in this letter that this result prescribes a region in the plane of masses which is sharp in the sense that if the drift-diffusion system is initiated outside the threshold region of global existence, then blow-up is possible: suitable initial data can be built up in such a way that the corresponding solution blows up in a finite time.     

Critical mass phenomenon for a chemotaxis kinetic model with spherically symmetric initial data

The goal of this paper is to exhibit a critical mass phenomenon occurring in a model for cell self-organization via chemotaxis. The very well-known dichotomy arising in the behavior of the macroscopic Keller–Segel system is derived at the kinetic level, being closer to microscopic features. Indeed, under the assumption of spherical symmetry, we prove that solutions with initial data of large mass blow-up in finite time, whereas solutions with initial data of small mass do not. Blow-up is the consequence of a momentum computation and the existence part is derived from a comparison argument. Spherical symmetry is crucial within the two approaches. We also briefly investigate the drift-diffusion limit of such a kinetic model. We recover partially at the limit the Keller–Segel criterion for blow-up, thus arguing in favour of a global link between the two models.     

Well-posedness of a model of point dynamics for a limit of the Keller-Segel system

The purpose of this paper is to prove well-posedness for a problem that describes the dynamics of a set of points by means of a system of parabolic equations. It has been seen in Velázquez (Point dynamics in a singular limit of the Keller-Segel model. (1) motion of the concentration regions, SIAM J. Appl. Math., to appear) that the considered model is the limit of a singular perturbation problem for a system of the Keller-Segel type.     

Some limit analysis in a one-dimensional stationary quantum hydrodynamic model for semiconductors

In this paper, we study the steady-state hydrodynamic equations for isothermal states including the quantum Bohn potential. The one-dimensional equations for the electron current density and the particle density are coupled self-consistently to the Poisson equation for the electric potential. The quantum correction can be interpreted as a dispersive regularization of the classical hydrodynamic equations. In a bounded interval supplemented by the proper boundary conditions, we investigate the zero-electron-mass limit, the zero-relaxation-time limit, the Debye-length (quasi-neutral) limit, and some combined limits, respectively. For each limit, we show the strong convergence of the sequence of solutions and give the associated convergence rate.     

The semiclassical limit in the quantum drift-diffusion model

Semiclassical limit to the solution of isentropic quantum drift-diffusion model in semicon- ductor simulation is discussed. It is proved that the semiclassical limit of this solution satisfies the classical drift-diffusion model. In addition, we also proved the global existence of weak solutions.     

Asymptotic profile in a one-dimensional steady-state nonisentropic hydrodynamic model for semiconductors

We study the stationary flow for a one-dimensional nonisentropic hydrodynamic model for semiconductor devices. This model consists of the continuous equations for the electron density, the electron current density and electron temperature, coupled the Poisson equation of the electrostatic potential. In a bounded interval supplemented by the proper boundary conditions, we investigate the zero-electron-mass limit, the zero-relaxation-time limit and the Debye-length (quasi-neutral) limit, respectively. We show the strong convergence of the sequence of solutions and give the associated convergence rate.     

An existence result for elliptic partial differential-algebraic equations arising in semiconductor modeling

We consider a system of partial differential-algebraic equations which model an electric network containing semiconductor devices. The zero-dimensional differential-algebraic network equations are coupled with multi-dimensional elliptic partial differential equations which model the devices. For this coupled system we prove an existence result.     

Hydrodynamical limit for a nongradient system: The generalized symmetric exclusion process

We consider a symmetric simple exclusion process where at most two particles per site are permitted. This model turns out to be nongradient. We prove that the particles' densities, under a diffusive rescaling of space and time, converge to the solution of a diffusion equation. We give a variational characterization of the diffusion coefficent. We also prove, for the generator of the process in finite volume, a lower bound on the spectral gap uniform in the volume. © 1994 John Wiley & Sons, Inc.     

Quasi-neutral limit of the drift-diffusion model for semiconductors with general sign-changing doping profile

The quasi-neutral limit of time-dependent drift diffusion model with general sign-changing doping profile is justified rigorously in super-norm (i.e., uniformly in space). This improves the spatial square norm limit by Wang, Xin and Markowich.     

Hydrodynamic limit for the velocity-flip model

We study the diffusive scaling limit for a chain of N$N$ coupled oscillators. In order to provide the system with good ergodic properties, we perturb the Hamiltonian dynamics with random flips of velocities, so that the energy is locally conserved. We derive the hydrodynamic equations by estimating the relative entropy with respect to the local equilibrium state, modified by a correction term.     

Hydrodynamic limit of a disordered lattice gas

We consider a model of lattice gas dynamics in ^d in the presence of disorder. If the particle interaction is only mutual exclusion and if the disorder field is given by i.i.d. bounded random variables, we prove the almost sure existence of the hydrodynamical limit in dimension d3. The limit equation is a non linear diffusion equation with diffusion matrix characterized by a variational principle. Mathematics Subject Classification (2000): 60K40, 60K35, 60J27, 82B10, 82B20     

The zero-electron-mass limit for a stationary nonisentropic hydrodynamic semiconductor model

In this paper, we study a general multidimensional nonisentropic hydrodynamical model for semiconductors. The model is self-consistent in the sense that the electric field, which forms a forcing term in the momentum equation, is determined by the coupled Poisson equation. For steady state, subsonic and potential flows, we discuss the zero-electron-mass limit of system by using the method of asymptotic expansions. We show the existence and uniqueness of profiles, and justify the asymptotic expansions up to any order.     

ASYMPTOTIC LIMITS OF ONE－DIMENSIONAL HYDRODYNAMIC MODELS FOR PLASMAS AND SEMICONDUCTORS

51. IntroductionIn mathematica1 modeling and numerical simulation for plasmas and semiconductorsdevices, the hydrodynamic model like the Euler-Poisson system is wildly used. Due tothe hyperbolic feature of the Euler equations, the study of weak solutions to the Euler-Poisson system is limited in one space dimension. In such situation, the existence of globalweak solutions can be proved under natural assumptions (see [22, 20, 17, 5, 18]). In aseries of papersl1l'l2'l31l4J l we are interested…     

Relaxation limit and initial layer to hydrodynamic models for semiconductors

We study a relaxation limit of a solution to the initial-boundary value problem for a hydrodynamic model to a drift-diffusion model over a one-dimensional bounded domain. It is shown that the solution for the hydrodynamic model converges to that for the drift-diffusion model globally in time as a physical parameter, called a relaxation time, tends to zero. It is also shown that the solutions to the both models converge to the corresponding stationary solutions as time tends to infinity, respectively. Here, the initial data of electron density for the hydrodynamic model can be taken arbitrarily large in the suitable Sobolev space provided that the relaxation time is sufficiently small because the drift-diffusion model is a coupled system of a uniformly parabolic equation and the Poisson equation. Since the initial data for the hydrodynamic model is not necessarily in “momentum equilibrium”, an initial layer should occur. However, it is shown that the layer decays exponentially fast as a time variable tends to infinity and/or the relaxation time tends to zero. These results are proven by the decay estimates of solutions, which are derived through energy methods.     

一类三次系统极限环的惟一性

讨论三次系统x=x(A0+A1x+A2y+A3xy-A4y2)y=y(x-1)的极限环问题.得到了该系统不存在极限环和存在惟一极限环的条件.     

The Asymptotic Behavior of Global Smooth Solutions to the Macroscopic Models for Semiconductors

The authors study the asymptotic behavior of the smooth solutions to the Cauchy problems for two macroscopic models (hydrodynamic and drift-diffusion models) for semiconductors and the related relaxation limit problem. First, it is proved that the solutions to these two systems converge to the unique stationary solution time asymptotically without the smallness assumption on doping profile. Then, very sharp estimates on the smooth solutions, independent of the relaxation time, are obtained and used to establish the zero relaxation limit.     

Vanishing viscosity limit for a coupled Navier-Stokes/Allen-Cahn system

In this paper, we study the vanishing viscosity limit for a coupled Navier-Stokes/Allen-Cahn system in a bounded domain. We first show the local existence of smooth solutions of the Euler/Allen-Cahn equations by modified Galerkin method. Then using the boundary layer function to deal with the mismatch of the boundary conditions between Navier-Stokes and Euler equations, and assuming that the energy dissipation for Navier-Stokes equation in the boundary layer goes to zero as the viscosity tends to zero, we prove that the solutions of the Navier-Stokes/Allen-Cahn system converge to that of the Euler/Allen-Cahn system in a proper small time interval. In addition, for strong solutions of the Navier-Stokes/Allen-Cahn system in 2D, the convergence rate is cν1/2.     

Fast reaction limit of a three-component reaction-diffusion system

We consider a three-component reaction-diffusion system with a reaction rate parameter, and investigate its singular limit as the reaction rate tends to infinity. The limit problem is given by a free boundary problem which possesses three regions separated by the free boundaries. One component vanishes and the other two components remain positive in each region. Therefore, the dynamics is governed by a system of two equations.