Efficient laser performance of Nd:YAG at 946 nm and intracavity frequency doubling with LiJO3, β-BaB2O4, and LiB3O5

3 , β-BaB₂O₄, and LiB₃O₅ yielded a maximum output power of 550 mW at 473 nm with β-BaB₂O₄ as the nonlinear crystal. Received: 15 September 1997     

Characterization of optical waveguide in Nd: LuVO4 crystals by triple-energy oxygen ion implantation

We report on the optical planar waveguide formation and modal characterization in Nd:LuVO₄ crystals by triple-energy O³⁺-ion implantation at energies of 2.4, 3.0, and 3.6 MeV and doses of 1.4, 1.4, and 3.1×10¹⁴ ions/cm², respectively. The prism-coupling method is used to investigate the dark-mode property at a wavelength of 633 nm. The refractive index profiles of the waveguide are reconstructed by the reflectivity calculation method (RCM). The modal analysis shows that the fields of TE modes are well restricted in the guiding region, which indicates the formation of non-leaky waveguide in the crystal.     

An all-solid-state tunable 214.5-nm continuous-wave light source by using two-stage frequency doubling of a diode laser

3 and β-BaB₂O₄ crystals. The power of the generated 214.5-nm light amounts to more than 100 μW. This light source will be used for laser cooling of Cd⁺ ions. Received: 4 August 1997/Revised version: 28 October 1997     

Characterization of optical waveguide in Nd: GdVO4 by triple-energy oxygen ion implantation

We report on the optical planar waveguide formation and modal characterization in Nd: GdVO₄ crystals by triple oxygen ion implantation at energies of (2.4, 3.0, and 3.6 MeV) and fluences of (1.4, 1.4, and 3.1)  × 10¹⁴ions/cm². The prism-coupling method is used to investigate the dark-mode property at wavelength of 632.8 nm. The refractive index profiles of the waveguide are reconstructed by an effective refractive index, n_eff method. The modal analysis shows that the fields of TE modes are well restricted in the guiding region, which means the formation of nonleaky waveguide in the crystal.     

Diode pumped Pr<Superscript>3+</Superscript>:LiYF<Subscript>4</Subscript>-BBO ultraviolet laser at 320 nm

A diode pumped Pr³⁺:LiYF₄ laser at 639.5 nm has been demonstrated. With an incident pump power of 920 mW, the maximum red output power was 272 mW. Moreover, intracavity second-harmonic generation (SHG) has also been achieved with a maximum ultraviolet power of 23 mW by using a β-BaB₂O₄ (BBO) nonlinear crystal. To the best of our knowledge, this is the first report on continuous-wave ultraviolet generation by intracavity frequency doubling Pr³⁺:LiYF₄ laser.     

电子束辐照诱导Bi:α-BaB2O4 单晶近红外宽带发光的研究

用提拉法技术生长出了Bi:α-BaB₂O₄单晶,并进行电子束辐照.测定了电子束辐照前后的吸收谱和荧光发射谱.在808 nm波长激光二极管的激发下,电子束辐照后的Bi:α-BaB₂O₄单晶中观测到了中心波长在1135 nm附近、半高宽为52 nm左右的近红外宽带发光现象.近红外宽带发光的发光中心是Bi⁺离子.电子束射线起到了将Bi³⁺和Bi²⁺还原至一价态 关键词： 近红外宽带发光 2O₄单晶')" href="#">α-BaB₂O₄单晶 电子束辐照     

Spectroscopic properties of Nd<Superscript>3+</Superscript>:CaNb<Subscript>2</Subscript>O<Subscript>6</Subscript> crystal

The absorption spectra, fluorescence spectrum and fluorescence decay curve of Nd³⁺ ions in CaNb₂O₆ crystal were measured at room temperature. The peak absorption cross section was calculated to be 6.202×10⁻²⁰ cm² with a broad FWHM of 7 nm at 808 nm for E//a light polarization. The spectroscopic parameters of Nd³⁺ ions in CaNb₂O₆ crystal have been investigated based on Judd-Ofelt theory. The parameters of the line strengths Ω _t are Ω ₂=5.321×10⁻²⁰ cm²,Ω ₄=1.734×10⁻²⁰ cm²,Ω ₆=2.889×10⁻²⁰ cm². The radiative lifetime, the fluorescence lifetime and the quantum efficiency are 167 μs, 152 μs and 91%, respectively. The fluorescence branch ratios are calculated to be β ₁=36.03%,β ₂=52.29%,β ₃=11.15%,β ₄=0.533%. The emission cross section at 1062 nm is 9.87×10⁻²⁰ cm².     

Well-confined Yb:GdVO4 laser waveguide formed by MeV C ion implantation

The planar waveguide in x-cut Yb:GdVO₄ crystal has been fabricated by 6.0 MeV carbon ion implantation with the fluence of 1 × 10¹⁴ ions/cm² at room temperature. The modes of the waveguide were measured by the prism-coupling method with the wavelength of 633 nm and 1539 nm, respectively. An enhanced ordinary refractive index region was formed with a width of about 4.0 μm beneath the sample surface to act as a waveguide structure. By performing a modal analysis on the observed transverse magnetic polarized modes, it was found that all the transverse magnetic polarized modes can be well-confined inside the waveguide. Strong Yb-related photoluminescence in Yb:GdVO₄ waveguide has been observed at room temperature, which reveals that it exhibits possible applications for integrated active photonic devices.     

Characterization of optical planar waveguide in Ce:KNSBN crystal formed by triple-energy helium ion implantation

We report on the optical planar waveguide formation and modal characterization in a Ce:KNSBN crystal by triple helium ion implantation at energies of (2.0, 2.2 and 2.4 MeV) and fluences of (1.5, 1.65 and 2.25) × 10¹⁵ cm⁻². The prism-coupling method is used to investigate the dark-line spectroscopy at wavelength of 632.8 and 1539 nm, respectively. The refractive index profiles of the waveguide are reconstructed by an effective refractive index method. It is found that the ion-beam irradiation creates slight increase of extraordinary index whilst decreases ordinary one in the guide region. The modal analysis shows, at wavelength of 632.8 nm, the fields of one TE and three TM modes are well restricted in the guiding region, which means the formation of non-leaky waveguide in the crystal. The damping coefficients of the waveguide are 0.6 and 1.6 cm⁻¹ for ordinary and extraordinary polarized light at 632.8 nm, respectively.     

Generation of continuous-wave coherent radiation tunable down to 190.8nm in β-BaB2O4

Continuous-wave coherent radiation tunable in the wavelength range 190.8–196.1 nm has been generated by sum-frequency generation in -BaB₂O₄. The fundamental beams were supplied by a Ti:Al₂O₃ laser and a frequency-doubled argon-ion laser.     

A tunable UV-light source for laser spectroscopy using second harmonic generation in β-BaB2O4

A -BaB₂O₄ (BBO) crystal is used to generate UV-light tunable in the range 230–303 nm by frequency doubling of an excimer-laser-pumped dye laser. This interval can be covered by a series of continuous scans of 0.25 nm (in the UV). During each scan the -BaB₂O₄ phase-matching angle is synchronized with the rotation of grating and etalon in the dye laser. The bandwidth of the frequency-doubled light is about 2 or 4 GHz depending on the dye laser etalon. The application is illustrated by a section of the one-photon excitation spectrum of Li₂ Rydberg molecules.     

Sum-frequency generation in a cooledβ-BaB2O4 crystal

Sum-frequency generation in -BaB₂O₄ has been studied by mixing the unpolarized output of an excimer laser pumped dye laser with its second harmonic. The shortest wavelength obtained at 95 K is 195.3 nm. A lower limit of 194.4±0.2 nm at the temperature of liquid helium can be expected.     

Proton-implanted optical channel waveguides in Nd<Superscript><Emphasis Type="Bold">3+</Emphasis></Superscript>:MgO:LiNbO<Subscript><Emphasis Type="Bold">3</Emphasis></Subscript>: fabrication,guiding properties,and luminescence investigation

Optical channel waveguides in Nd³⁺:MgO:LiNbO₃ crystals are produced by using implantation of 500 keV protons at dose of 6×10¹⁶ ions/cm² with a stripe photoresist mask. With thermal annealing treatment at 400°C for 60 min, the propagation losses of the waveguides could be reduced down to ∼4 dB/cm at wavelength of 632.8 nm. The calculated modal profiles are in fairly good agreement with the experimental near-field intensity distributions of the waveguide modes. The microluminescence investigation indicates the emission intensity of Nd³⁺ ions is only slightly modified with respect to the bulk, exhibiting potentials for laser applications.     

The optical properties of planar waveguides in LiB3O5 crystals formed by Cu implantation

A planar optical waveguide has been formed in a LiB₃O₅ crystal using 6.0 MeV Cu⁺-ions with a dose of 1 × 10¹⁵ ions/cm² at room temperature. Possible propagating modes were measured at a wavelength of 633 nm using the prism-coupling method. The refractive index profiles of the waveguide were reconstructed by an effective refractive index method and the beam propagation method was used to investigate the properties of the propagation modes in the formed waveguide. The results suggest that the fundamental TE₀ and TM₀ modes may be well-confined and propagate a longer distance inside the waveguide. The implantation process was also simulated using the transport of ions in matter code (TRIM), which indicates that the nuclear energy deposition may be the main factor for the refractive index change.     

Growth of thin, crystalline oxide, nitride, and oxynitride films on NiAl and CoGa surfaces

At 300 K, an amorphous Al-oxide film is formed on NiAl(001) upon oxygen adsorption. Annealing of the oxygen-saturated NiAl(001) surface to 1200 K leads to the formation of thin well-ordered θ-Al₂O₃ films. At 300 K, and low-exposure oxygen atoms are chemisorbed on CoGa(001) on defects and on step edges of the terraces. For higher exposure up to saturation, the adsorption of oxygen leads to the formation of an amorphous Ga-oxide film. The EEL spectrum of the amorphous film exhibits two losses at ≈400 and 690 cm^-1. After annealing the amorphous Ga-oxide films to 550 K thin, well-ordered β-Ga₂O₃ films are formed on top of the CoGa(001) surface. The EEL spectrum of the β-Ga₂O₃ films show strong Fuchs-Kliewer (FK) modes at 305, 455, 645, and 785 cm^-1. The β-Ga₂O₃ films are well ordered and show (2×1) LEED pattern with two domains, oriented perpendicular to each other. The STM study confirms the two domains structure and allows the determination of the two-dimensional lattice parameters of β-Ga₂O₃. The vibrational properties and the structure of β-Ga₂O₃ on CoGa(001) and θ-Al₂O₃ on NiAl(001) are very similar. Ammonia adsorption at 80 K on NiAl(111) and NiAl(001) and subsequent thermal decomposition at elevated temperatures leads to the formation of AlN. Well-ordered and homogeneous AlN thin films can be prepared by several cycles of ammonia adsorption and annealing to 1250 K. The films render a distinct LEED pattern with hexagonal [AlN/NiAl(111)] or pseudo-twelve-fold [AlN/NiAl(001)] symmetry. The lattice constant of the grown AlN film is determined to be a_AlN= 3.11 Å. EEL spectra of AlN films show a FK phonon at 865 cm^-1. The electronic gap is determined to be E_g= 6.1±0.2 eV. GaN films are prepared by using the same procedure on the (001) and (111) surfaces of CoGa. The films are characterized by a FK phonon at 695 cm^-1 and an electronic band gap E_g= 3.5±0.2 eV. NO adsorption at 75 K on NiAl(001) and subsequent annealing to 1200 K leads to the formation of aluminium oxynitride (AlON). An oxygen to nitrogen atomic ratio of ≈2:1 was estimated from the analysis of AES spectra. The AlON films shows a distinct (2×1) LEED pattern and the EEL spectrum exhibits characteristic Fuchs-Kliewer modes. The energy gap is determined to be E_g= 6.6±0.2 eV. The structure of the AlON film is derived from that of θ-Al₂O₃ formed on NiAl(001). Received: 21 March 1997/Accepted: 12 August 1997     

Measurement of electric field strengths in a waveguide by means of the dynamic Stark effect in hydrogen and neutral helium spectral lines

The dynamic Stark effect of the spectral lines H_β and of the neutral helium lines λ=402.6 nm (2³ P ⁰−5³ D) and λ=438.8 nm (2¹ P ⁰−5¹ D) emitted from a discharge tube was used for probing rf electric fields in a transverse waveguide. Calculations accounting for the pertubation of the atomic states by strong unidirectional fields prove to be suitable in order to interprete the main experimental results. If the waveguide is terminated with a metallic reflector and the plasma in the discharge tube becomes overdense—then representing a slightly permeable mirror—a resonant enhancement of the electric field strength may be achieved by tuning. This enhancement is well recognizable in the spectral line contours.     

Efficient generation of blue light by frequency doubling of a Nd:YAG laser operating on 4 F 3/24 I 9/2 transitions

Efficient room-temperature operation of ⁴ F _3/2⁴ I _9/2 transitions in diode-end-pumped Nd:YAG lasers at 946 nm and 938.5 nm is reported. 7.0-W continuous-wave output power at 946 nm and 3.9 W at 938.5 nm have been obtained. An analytical model has been developed for the quasi-three-level laser including the influence of energy-transfer upconversion. Frequency doubling of these transitions in periodically poled KTP generated blue light at 473 nm and 469 nm. Both single-pass extra-cavity as well as intracavity schemes have been investigated. Received: 31 July 2002 / Published online: 5 February 2003 RID="*" ID="*"Corresponding author. Fax: +46-8/750-5430, E-mail: stefan.bjurshagen@acreo.se     

Multifunctional Er3+–Yb3+ codoped Gd2O3 nanocrystalline phosphor synthesized through optimized combustion route

This paper reports the synthesis of high upconversion luminescent Gd₂O₃: Er³⁺, Yb³⁺ nanophosphor through optimized combustion route using urea as a reducing agent. The paper also reports the first observation of upconversion emission bands extending upto the UV region (335, 366 and 380 nm) in Er³⁺–Yb³⁺ co-doped phosphor materials. The fuel to oxidizer ratio has been varied to obtain the maximum upconversion luminescence. Three high intensity bands are found at 408, 523–548 and 667 nm due to the ⁴G_11/2 → ⁴I_15/2, ²H_11/2, ⁴S_3/2 → ⁴I_15/2 and ⁴F_9/2 → ⁴I_15/2 transitions, respectively, along with the other bands. Input excitation power dependence has been studied for different transitions, and the saturation effect and decrease in the slope of different transitions at higher input pump power has been explained. Heat treatments of the samples show change in crystallite phase/size and relative upconversion luminescence intensities of blue, green and red bands. The color of the phosphor emission has shown to be tunable with change in the crystal structure as well as on excitation laser power and Er³⁺–Yb³⁺ concentration. The property of color tunability of the phosphor material has been used to record the fingerprint in different colors. Also, the future prospect of the nanocrystalline phosphor material as a sensor for temperature, using FIR method, has been explored.     

Picosecond third-harmonic light generation inβ-BaB2O4

The type-II phase-matched third-harmonic light generation in a -BaB₂O₄ crystal is studied experimentally. A passively mode-locked Nd: phosphate glass laser is used as a pump source. At a pump pulse peak intensity ofI ₁₀=5×10¹⁰W/cm² a third-harmonic conversion efficiency of a percent is obtained. A theoretical discussion of phase-matched third-harmonic generation in crystals of the symmetry group of -BaB₂O₄ (trigonal class 3) is given. The effective nonlinear susceptibility _eff for type-II phase-matching is determined.On leave from the Shanghai Institute of Optics and Fine Mechanics, Academia Sinica, Shanghai, P.R. China     

Optical characteristics of highly ordered gallium oxide nano-islands on GaAs

A periodic array of Ga oxide islands was obtained by annealing the highly ordered Ga nano-droplets on GaAs surface at 400°C under an oxygen atmosphere for 7 hours. These Ga oxides are a mixture of α-Ga₂O₃ and β-Ga₂O₃ confirmed by Raman spectroscopy study. Enhanced optical transmission of GaAs with such ordered Ga oxide nano-islands was obtained. Both dielectric and dimensional confinement effects were considered in analysis of the electromagnetic characteristics of the nanostructured materials. Finite-difference time-domain method was used to numerically study the light transmission through the patterned Ga oxide on GaAs surface. Based on the calculated results, the light transmission enhancement is attributed to the formation of the ordered nano Ga oxides.