Synthesis and characterization of iron silicon boron (Fe5Si2B) and iron boride (Fe3B) nanowires

Single-crystal iron silicon boron (Fe(5)Si(2)B) and iron boride (Fe(3)B) nanowires were synthesized by a chemical vapor deposition (CVD) method on either silicon dioxide (SiO(2)) on silicon (Si) or Si substrates without introducing any catalysts. FeI(2) and BI(3) were used as precursors. The typical size of the nanowires is about 5-50 nm in width and 1-20 mum in length. Different kinds of Fe-Si-B and Fe-B structures were synthesized by adjusting the ratio of FeI(2) vapor to BI(3) vapor. Single-crystal Fe(5)Si(2)B nanowires formed when the FeI(2) sublimator temperature was kept in the range of 540-570 degrees C. If the FeI(2) sublimator temperature was adjusted in the range of 430-470 degrees C, single-crystal Fe(3)B nanowires were produced. Fe(3)B nanowires grow from polycrystalline Fe(5)SiB(2) particles, while Fe(5)Si(2)B nanowires grow out of the Fe(5)Si(2)B layers, which are attached to triangle shaped FeSi particles. Both the ratio of FeI(2) vapor to BI(3) vapor and the formation of the particles (Fe(5)SiB(2) particles for the growth of Fe(3)B nanowires, FeSi particles for the growth of Fe(5)Si(2)B nanowires) are critical for the growth of Fe(3)B and Fe(5)Si(2)B nanowires. The correct FeI(2) vapor to BI(3) vapor ratio assures the desired phase form, while the particles provide preferential sites for adsorption and nucleation of Fe(3)B or Fe(5)Si(2)B molecules. Fe(3)B or Fe(5)Si(2)B nanowires grow due to the preferred growth direction of <110>.     

Si衬底上生长的铁硅化合物结构和取向分析

采用分子束外延法分别在650-920℃的Si(110)和920℃的Si(111)衬底表面生长出铁的硅化物纳米结构,并主要分析了920℃高温下纳米结构的形貌、组成相及其与Si衬底的取向关系.扫描隧道显微镜(STM)研究表明,920℃高温下,Si(110)衬底上生长的铁硅化合物完全以纳米线的形式存在,且其尺寸远大于650℃低温下外延生长的纳米线尺寸;Si(111)衬底上生长出三维岛和薄膜两种形貌的铁硅化合物,其中三维岛具有金属特性且直径约300 nm、高约155 nm,薄膜厚度约2 nm.电子背散射衍射研究表明920℃高温下Si(110)衬底上生长的纳米线仅以β-FeSi2的形式存在,且β-FeSi2相与衬底之间存在唯一的取向关系:β-FeSi2(101)//Si(11 1);β-FeSi2[010]//Si[110];Si(111)衬底上生长的三维岛由六方晶系的Fe2Si相组成,Fe2Si属于164空间群,晶胞常数为a=0.405 nm,c=0.509 nm;与衬底之间的取向关系为Fe2Si(001)∥Si(111)和Fe2Si[1 20]//Si[112].     

Si衬底上生长的铁硅化合物结构和取向分析

采用分子束外延法分别在650-920 ℃的Si（110）和920 ℃的Si（111）衬底表面生长出铁的硅化物纳米结构,并主要分析了920 ℃高温下纳米结构的形貌、组成相及其与Si 衬底的取向关系. 扫描隧道显微镜（STM）研究表明,920 ℃高温下,Si（110）衬底上生长的铁硅化合物完全以纳米线的形式存在,且其尺寸远大于650 ℃低温下外延生长的纳米线尺寸;Si（111）衬底上生长出三维岛和薄膜两种形貌的铁硅化合物,其中三维岛具有金属特性且直径约300 nm、高约155 nm,薄膜厚度约2 nm. 电子背散射衍射研究表明920 ℃高温下Si（110）衬底上生长的纳米线仅以β-FeSi₂的形式存在,且β-FeSi₂相与衬底之间存在唯一的取向关系：β-FeSi₂（101）//Si（111）;β-FeSi₂ [010]//Si[110];Si（111）衬底上生长的三维岛由六方晶系的Fe₂Si 相组成,Fe₂Si 属于164 空间群,晶胞常数为a=0.405 nm,c=0.509 nm;与衬底之间的取向关系为Fe₂Si（001）∥Si（111）和Fe₂Si[120]//Si[112].     

Enhanced growth of crystalline-amorphous core-shell silicon nanowires by catalytic thermal CVD using in situ generated tin catalyst

In this work,we prepared silicon nanowires(Si NWs) on both fluorine-doped SnO 2(FTO) coated glass substrate and common glass substrate by catalytic thermal chemical vapor deposition(CVD) using indium film as the catalyst.It is confirmed that indium can catalyze the growth of Si NWs.More importantly,we found that tin generated in situ from the reduction of SnO 2 by indium can act as catalyst,which greatly enhances the growth of Si NWs on FTO substrate.The obtained Si NWs have a uniform crystalline-amorphous core-shell structure that is formed via vapor-liquid-solid and vapor-solid growth of silicon sequentially.This work provides a strategy to prepare Si NWs in high yield by catalytic thermal CVD using the low melting point metal catalysts.     

Organic‐Stabilizer‐Free Polyol Synthesis of Silver Nanowires for Electrode Applications

The polyol reduction of a Ag precursor in the presence of an organic stabilizer, such as poly(vinylpyrrolidone), is a widely used method for the production of Ag nanowires (NWs). However, organic capping molecules introduce insulating layers around each NW. Herein we demonstrate that Ag NWs can be produced in high yield without any organic stabilizers simply by introducing trace amounts of NaCl and Fe(NO₃)₃ during low‐temperature polyol synthesis. The heterogeneous nucleation and growth of Ag NWs on initially formed AgCl particles, combined with oxidative etching of unwanted Ag nanoparticles, resulted in the selective formation of long NWs with an average length of about 40 μm in the absence of a capping or stabilizing effect provided by surface‐adsorbing molecules. These organic‐stabilizer‐free Ag NWs were directly used for the fabrication of high‐performance transparent or stretchable electrodes without a complicated process for the removal of capping molecules from the NW surface.     

SiO2 nanowires growing on hexagonally arranged circular patterns surrounded by TiO2 films

An effective approach has been demonstrated for the synthesis of novel composite architectures, SiO2 nanowires (NWs) growing on hexagonally arranged circular patterns surrounded by TiO2 films on Si substrate. First, a solution-dipping template strategy is used to create TiO2 films with hexagonally arranged pores on Au-coated Si substrate, resulting in hexagonally arranged circular patterns of catalysts surrounded by TiO2 films. Then the patterned catalysts guide the growth of SiO2 NWs with the original TiO2 films preserved, realizing the composite structures. Such composite architectures combine the photoluminescence (PL) properties of the two components, and also present more favorable PL property, laying a foundation for future advanced nano-optoelectronic devices.     

Metallic single-crystal CoSi nanowires via chemical vapor deposition of single-source precursor

We report the synthesis, structural characterization, and electrical transport properties of free-standing single-crystal CoSi nanowires synthesized via a single-source precursor route. Nanowires with diameters of 10-150 nm and lengths of greater than 10 mum were synthesized through the chemical vapor deposition of Co(SiCl(3))(CO)(4) onto silicon substrates that were covered with 1-2 nm thick SiO(2). Transmission electron microscopy confirms the single-crystal structure of the cubic CoSi. X-ray absorption and emission spectroscopy confirm the chemical identity and show the expected metallic nature of CoSi, which is further verified by room-temperature and low-temperature electrical transport measurements of nanowire devices. The average resistivity of CoSi nanowires is found to be about 510 muOmega cm. Our general and rational nanowire synthesis approach will lead to a broad class of silicide nanowires, including those metallic materials that serve as high-quality building blocks for nanoelectronics and magnetic semiconducting Fe(1-x)Co(x)Si suitable for silicon-based spintronics.     

Nitrate ion promoted formation of Ag nanowires in polyol processes: a new nanowire growth mechanism

In polyol processes, it was widely accepted that Ag nanowires (NWs) were formed via uniaxial growth of multiple twinned decahedral particles (MTPs) along the {111} facets. Herein, we show that the above MTP uniaxial growth mechanism for growth of nanorods (NRs) and short nanowires (NWs) is different from that for the growth of long Ag NWs. We provide experimental evidence to show that polycrystalline long Ag NWs (up to ~100 μm) could be formed in high yield (~90%) by a completely different growth mechanism via self-assembly of Ag NPs/NRs. Transmission electron microscope (TEM) measurements show that long Ag NWs are composed of crystalline Ag NPs and NRs with multiple crystal orientations, and many NRs have crystalline structures with pentagonal cross section. Solution phase in situ X-ray diffraction (XRD) measurements show that a strained face-centered tetragonal (fct) phase was gradually formed during the formation and growth of long Ag NWs, in addition to the normal face-centered cubic (fcc) phase. The strained fct phase disappears after partial etching by HAuCl(4) and Fe(NO(3))(3). The working conditions for the MTP uniaxial growth mechanism and the current nitrate-promoted self-assembly growth mechanism will be compared and discussed.     

Tuning the electrical transport properties of n-type CdS nanowires via Ga doping and their nano-optoelectronic applications

Gallium-doped n-type CdS nanowires (NWs) were successfully synthesized via a thermal evaporation method. The conductivities of the CdS NWs were dramatically improved by nearly nine orders of magnitude after Ga doping, and could be further tuned over a wide range by adjusting the doping level. High-performance metal-insulator-semiconductor field-effect transistors (MISFETs) were constructed based on the single CdS : Ga NW with high-κ Si(3)N(4) dielectrics and top-gate geometries. In contrast to back-gate FETs, the MISFETs revealed a substantial improvement in device performance. Nano-light emitting diodes (nanoLEDs) were fabricated from the CdS : Ga NWs by using a n-NW/p(+)-Si substrate hybrid device structure. The nanoLEDs showed a bright yellow emission at a low forward bias. It is expected that the Ga-doped CdS NWs with controlled electrical transport properties will have important applications in nano-optoelectronic devices.     

Simple method for synthesis of silicon nanowire: Pulsed laser deposition in furnace from p-Si wafer target

Si nanowires (NWs) were fabricated in a vacuum furnace using a Nd:YAG pulsed laser with the wavelength of 325 nm. Commercial p-type Si wafer is used for the target, and no catalytic materials are used. Scanning electron microscopy (SEM) images indicate that the diameters of Si NWs ranged from 10 to 150 nm. Si NWs have various sizes and shapes with a substrate position inside the furnace, and their morphologic construction is reproducible. The formation mechanism of the NWs is discussed.     

银/金纳米线阵列表面增强拉曼基底的制备及对孔雀石绿的高灵敏度检测

利用种子介导的软模板生长方法制备了金纳米线(Au NWs)阵列, 通过调节生长温度控制Au NWs阵列的形貌, 最后在经硼氢化钠(NaBH₄)清洗过的Au NWs阵列上化学沉积银纳米颗粒(Ag NPs), 制得银/金纳米线(Ag/Au NWs)阵列作为表面增强拉曼散射(SERS)基底. 选用罗丹明6G(R6G)作为拉曼探针分子测定了Ag/Au NWs阵列的SERS性能. 结果表明, Ag/Au NWs阵列作为SERS基底具有高灵敏度、 优异的信号均匀性和良好的稳定性. 使用Ag/Au NWs阵列对孔雀石绿(MG)检测的检出限可低至1×10^-8 mol/L, 线性范围为 1×10^-8~1×10^-4 mol/L. NaBH₄可以在不影响SERS性能的情况下去除Ag/Au NWs阵列上吸附的分子, 使得 SERS基底可以重复使用. 使用Ag/Au NWs阵列对湖水中的MG进行检测, 得到了可靠的回收率, 证明Ag/Au NWs 阵列在检测环境水体中的孔雀石绿上具有应用潜力.     

Pt3Te4 nanoparticles from tellurium nanowires

We report the synthesis of platinum telluride nanoparticles (Pt(3)Te(4) NPs) in the solution phase at room temperature using a template-assisted method. The dendrimeric aggregates formed are composed of several small units of Pt(3)Te(4) NPs of ～4 nm diameter. Tellurium nanowires (Te NWs) are used as the template and the reducing agent in the growth of NPs which occurs due to the galvanic replacement reaction between Te NWs and PtCl(6)(2-). Surface-enhanced Raman scattering (SERS) of the dispersed Pt(3)Te(4) NPs was studied using crystal violet (CV) as the analyte. SERS sensitivity up to 10(-8) M of CV was observed. The Raman enhancement factor (EF) of adsorbed CV on NP aggregates was calculated to be 1.74 × 10(5). The catalytic ability of the as-synthesized Pt(3)Te(4) NPs for the reduction of 4-nitrophenol (4-NP) was studied.     

Unidirectional Pt silicide nanowires grown on vicinal Si(100)

We investigated the structure and electronic properties of unidirectional Pt(2)Si nanowires (NWs) grown on a Si(100)-2 degrees off surface. We found that Pt(2)Si NWs were formed along the step edges of the Si(100)-2 degrees off surface with c(4x6) reconstructions that occurred on the terraces of Si(100) using scanning tunneling microscopy and the structure of formed NWs was found to be Pt(2)Si by core-level photoemission spectroscopy. Moreover, we confirmed that the electronic band structures of the NWs along the NW direction are different from those perpendicular to the NWs and the surface state induced by the Pt(2)Si NWs was observed with a small density of state using the angle-resolved photoemission spectra.     

Single-crystal nanowires of platinum can be synthesized by controlling the reaction rate of a polyol process

Platinum nanowires of approximately 100 nm in length and approximately 5 nm in diameter have been synthesized by reducing H(2)PtCl(6) with ethylene glycol in the presence of poly(vinyl pyrrolidone) (PVP) and a trace amount of Fe(3+) or Fe(2+). The wires were generated at the final stage of the synthesis, which involved the formation of several intermediate species. The Fe(3+) or Fe(2+) ions had dual functions in the synthesis: they induced aggregation of Pt nanoparticles into larger structures that served as the nucleation sites, and they greatly reduced the reaction rate and supersaturation level to induce anisotropic growth. The reaction mechanism was studied by X-ray photoelectron spectroscopy (XPS) and UV-vis spectral analysis. The Pt nanowires could be readily separated from the surfaces of the agglomerates by sonication and obtained as pure samples by centrifugation.     

Synthesis and growth mechanisms of one-dimensional strontium hydroxyapatite nanostructures

Strontium hydroxyapatite (SrHAp) nanowires with an aspect ratio of several hundreds were synthesized by controlling the growth conditions during a hydrothermal process. In the strontium phosphate system, it was found that the phase evolution changed with pH and that the aspect ratio of SrHAp was affected by the phases present before heating. Since the conditions for SrHAp nucleation prohibits one-dimensional growth, it was impossible to grow large-scale SrHAp nanowires using routine hydrothermal methods. Through thermodynamic considerations, the mechanisms of nanowire formation appear to involve the rapid release of the stored chemical potential in a metastable phase, which promotes the anisotropic growth of the most stable SrHAp nanostructures. Thereby, the conditions for both the nucleation of the SrHAp phase and the anisotropic growth were determined simultaneously, and considerable quantities of SrHAp nanowires were synthesized.     

Synthesis and alignment of silver nanorods and nanowires and the formation of Pt, Pd, and core/shell structures by galvanic exchange directly on surfaces

Here we describe the synthesis of Ag nanorods (NRs) (aspect ratio <20) and nanowires (NWs) (aspect ratio > or =20) directly on surfaces by seed-mediated growth. The procedure involves attaching gold seed nanoparticles (Au NPs) to 3-mercaptopropyltrimethoxysilane (MPTMS)-functionalized silicon or glass surfaces and growing them into NRs/NWs by placing the substrates into a solution containing cetyltrimethylammonium bromide (CTAB), silver nitrate, and ascorbic acid with the pH ranging from 7 to 12. Under our conditions, Ag NRs/NWs grow optimally at pH 10.6 with a 3% yield, where spherical, triangular, and hexagonal nanostructures represent the other byproducts. The length of Ag NRs/NWs ranges from 50 nm to more than 10 microm, the aspect ratio (AR) ranges from 1.4 to >300, and the average diameter is approximately 35 nm. Approximately 40% of the 1D structures are NRs, and 60% are NWs as defined by their ARs. We also report the alignment of Ag NRs/NWs directly on surfaces by growing the structures on amine-functionalized Si(100) surfaces after an amidation reaction with acetic acid and a method to improve the percentage of Ag NRs/NWs on the surface by removing structures of other shapes with adhesive tape. Surface-grown Ag NRs/NWs also react with salts of palladium, platinum, and gold via galvanic exchange reactions to form high-surface-area 1D structures of the corresponding metal. The combination of the seed-mediated growth of Ag on Au NRs followed by the galvanic exchange of Ag with Pd leads to interesting core/shell NRs grown directly on surfaces. We used scanning electron microscopy, UV-vis spectroscopy, and X-ray photoelectron spectroscopy to characterize the surface-grown nanostructures.     

Ultralong PtPd Alloyed Nanowires Anchored on Graphene for Efficient Methanol Oxidation Reaction

The rational synthesis of Pt-based alloyed nanowires still remains a great challenge because of the different reduction potentials between Pt and another metal and the intrinsic feature of isotropic growth in face-centered cubic (fcc) structured Pt. In this work, PtPd alloyed nanowires with ultrahigh aspect ratio anchored on graphene (PtPd NWs/graphene) were synthesized by a facile solvothermal method without the use of any templates or surfactants. Due to the integration of ultralong PtPd nanowires and stable graphene support, PtPd NWs/graphene exhibited outstanding electrochemical activity toward methanol oxidation reaction (MOR) in comparison with pure Pt NWs/graphene and commercial Pt/C catalysts. Meanwhile, PtPd NWs/graphene had a much higher current density than Pt NWs/graphene and commercial Pt/C catalysts at a constant potential for 7200s in alkaline methanol solution. Moreover, after 1000 cycles of durability testing, PtPd NWs/graphene retained 89.2% of its initial mass activity, much superior to the 63.7% retained for commercial Pt/C.     

Surface engineering on segmented copper-iron nanowires arrays

Surface engineering that could modulate the surface shape to be endowed with the high specific surface ratio, abundant chemical dangling bonds and improved defects exposure is highly desired and needs further exploring. Here, we report a facile strategy of surface engineering on decorating the controllable segmented copper-iron nanowires arrays (Cu-Fe NWs) with their respective hydroxides. Specifically, the pristine segmented Cu-Fe NWs are firstly synthesized via sequentially electrodepositing Cu NWs and Fe NWs inside the nanochannels of anode aluminum oxide (AAO) template. Subsequently, the surface and interface of Cu-Fe NWs are wet-chemically etched, in which the metallic Cu and Fe are partially converted into Cu(OH)_x nano-fibrous roots (NFRs) and FeO(OH)_y nanoparticles (NPs), and finally decorate around the respective outer-surface of Cu NWs and Fe NWs segments. As one case of the applications in hydrogen evolution reaction (HER), our surface-modified Cu-Fe NWs exhibit improved catalytic activity compared with Fe NWs.     

Higher manganese silicide nanowires of Nowotny chimney ladder phase

We report the synthesis, structural identification, and electrical properties of the first one-dimensional (1-D) nanomaterials of a semiconducting higher manganese silicide (MnSi(2-x)) with widths down to 10 nm via chemical vapor deposition of the single-source precursor Mn(CO)(5)SiCl(3). The complex Nowotny chimney ladder structure of these homologous higher manganese silicides, also referred to as Mn(n)Si(2n-m), MnSi(1.75), or MnSi(1.8), contributes to the excellent thermoelectric performance of the bulk materials, which would be enhanced by phonon scattering due to 1-D nanoscale geometry. The morphology, structure, and composition of MnSi(2-x) nanowires and nanoribbons are examined using electron microscopy and X-ray spectroscopy. Elaborate select area electron diffraction analysis on single-crystal nanowires reveals the phase to be Mn(19)Si(33), one of a series of crystallographically distinct higher manganese silicides that have a Nowotny chimney ladder structure. Electrical transport study of single nanowires shows that they are degenerately doped with a low resistivity (17 mohms x cm) similar to the bulk.     

Thermodynamics of diamond nucleation on the nanoscale

To have a clear insight into the diamond nucleation upon the hydrothermal synthesis and the reduction of carbide (HSRC), we performed the thermodynamic approach on the nanoscale to elucidate the diamond nucleation taking place in HSRC supercritical-fluid systems taking into account the capillary effect of the nanosized curvature of the diamond critical nuclei, based on the carbon thermodynamic equilibrium phase diagram. These theoretical analyses showed that the nanosize-induced interior pressure of diamond nuclei could drive the metastable phase region of the diamond nucleation in HSRC into the new stable phase region of diamond in the carbon phase diagram. Accordingly, the diamond nucleation is preferable to the graphite phase formation in the competing growth between diamond and graphite upon HSRC. Meanwhile, we predicted that 400 MPa should be the threshold pressure for the diamond synthesis by HSRC in the metastable phase region of diamond, based on the proposed thermodynamic nucleation on the nanoscale.