CS2团簇增强的激光多价电离现象的质谱研究

利用脉宽为25ns的脉冲Nd: YAG 532 nm的激光，在8×10¹⁰W/cm²的强度下，用飞行时间质谱对CS₂的激光电离过程进行了研究.观察到了较强的C²⁺和S²⁺高价离子信号，这些高价离子C²⁺，S²⁺的最可几平动能高达144 eV，112 eV.不同进样方式，激光延迟以及束源压力的实验结果表明，这些高价离子可能来源于CS₂团簇的库仑爆炸过程.多光子电离引发，逆韧致吸收加热-电子碰撞电离模型可能是高价离子产生的机理. 关键词： 2')" href="#">CS₂ 团簇 高价离子 激光电离     

纳秒光场下原子团簇产生高离化Kr离子的激光波长效应

利用不同波长和光强的纳秒激光,对Kr原子团簇进行了激光电离的飞行时间质谱研究,观察到Kr高价离子价态显著地依赖于激光波长,当分别用波长为1064,532,355和266 nm的激光照射Kr原子团簇时,可分辨的离子最高价态分别为+17,+11,+4和+2价;然而离子价态与激光功率密度的依赖关系并不明显。实验结果支持多光子电离-逆轫致吸收加热-电子碰撞电离三步电离模型,表明电子碰撞电离是高价离子产生的主要途径。     

Cluster-assisted generation of multiply charged ions in nanosecond laser ionization of seeded furan beam at 532 and 1064 nm

The multiply charged ions of C ^{q +} (q ≤ 4), O ^{q +} (q ≤ 6) were produced when a furan cluster beam interacted with nanosecond 1064 and 532 nm lasers at intensities of 10¹⁰–10¹² W/cm². It is shown that O⁶⁺ and C⁴⁺ ions were the dominant multiply charged species at 1064 nm, while C²⁺, C³⁺, O²⁺, O³⁺ ions were the main multiply charged species at 532 nm. By varying the electric field in the extraction region of the time of flight mass spectrometer (TOFMS), two types of ions were extracted, one of which had large kinetic energy and narrow space distribution, and the other had small kinetic energy and broad space distribution. The formation channels for He-like ions of C⁴⁺ and O⁶⁺ are discussed.     

团簇增强的纳秒激光电离产生Xez+(z≤20)高价离子

利用功率密度为1011—1012W·cm-2的1064nm纳秒激光电离氙原子团簇，在飞行时间质谱中观察到电离态高达+20的高价离子.不同脉冲束位置实验表明，仅当激光作用于分子束的中段时，才能观察到高价离子，且高价离子的强度随束源压力的增加而迅速增强.实验结果表明束中大尺寸团簇的存在与高价离子的形成密切相关.讨论了高价离子产生的可能机理. 关键词： 氙 纳秒激光 高价离子 飞行时间质谱     

Cluster-assisted generation of multi-charged ions in nanosecond laser ionization of pulsed hydrogen sulfide beam at 1064 and 532nm

The multi-charged sulfur ions of S^q= (q\le 6) have been generated when hydrogen sulfide cluster beams are irradiated by a nanosecond laser of 1064 and 532,nm with an intensity of 10¹⁰\sim 10¹²W1\cdotcm^-2. S⁶⁺ is the dominant multi-charged species at 1064nm, while S⁴⁺, S³⁺ and S²⁺ ions are the main multi-charged species at 532nm. A three-step model (i.e., multiphoton ionization triggering, inverse bremsstrahlung heating, electron collision ionizing) is proposed to explain the generation of these multi-charged ions at the laser intensity stated above. The high ionization level of the clusters and the increasing charge state of the ion products with increasing laser wavelength are supposed mainly due to the rate-limiting step, i.e., electron heating by absorption energy from the laser field via inverse bremsstrahlung, which is proportional to \lambda ², \lambda being the laser wavelength.     

纳秒激光电离分子团簇产生高价离子实验研究

利用飞行时间质谱仪,研究了功率密度为109~1011 W/cm2,波长为532 nm 的纳秒激光对苯、呋喃、甲醇及碘甲烷分子团簇的激光电离过程。实验观察到了高平动能的高价离子Cq+(q≤3),Oq+(q≤3)和Iq+(q≤4),该过程经历了以“初始的多光子电离引发-逆轫致吸收加热-电子碰撞电离模式”为主的激光团簇作用过程,后期经历了团簇的库仑爆炸过程。实验发现：即使激光能量变化一个量级以上时,主要高价离子的种类及占全部离子产物的比率也没有明显的变化,但是高价离子的初始平动能随激光强度的增大而增加;分子中含有较多个外壳层电子的氧、碘原子更容易电离产生高价离子,而碳离子的价态和强度相对较低。     

纳秒强激光中丙酮团簇增强的多价电离现象

利用脉宽为25 ns的脉冲Nd: YAG 532 nm的激光，在10¹⁰—10¹¹ W/cm²的强度下，用飞行时间质谱对丙酮团簇的激光电离过程进行了研究. 观察到了较强的O^q+(q=2—4)和C^q+(q=1—4)高价离子信号，这些高价离子 C⁴⁺，C³⁺，C²⁺，O⁴⁺，O³⁺，O²⁺的最大概然平动能分别为240 eV，70 eV，30 eV，90 eV，80 eV，40 eV. 高价离子的强度和平动能随激光强度的增大而增大. 我们提出一个多光子电离引发，逆韧致吸收加热-电子碰撞电离模型来解释高价离子的产生. 关键词： 丙酮 团簇 库仑爆炸 高价离子     

纳秒强激光场中甲醇光电离产生高价离子的研究

利用25ns脉冲Nd YAG 532nm的激光，在1011 W·cm-2的光场强度下，利用飞 行时间质谱对He, N2, Ar载气条件下甲醇的激光电离过程进行了研究.发现当利用氩作为 载气时，除观察到一般多光子电离所产生的离子和碎片离子外，还观察到很强的Cq+(q=2-4)和Oq+(q=2—4)高价离子.这些离子都有很高的平动能，通 过改变载 气种类和压力以及使用不同延迟条件的脉冲电场的实验，可以认为这些高价离子来源于含甲 醇团簇的库仑爆炸过程.这些实验结果为发展库仑爆炸理论研究提供新思路. 关键词： 甲醇 纳秒激光 高价离子 库仑爆炸     

纳秒光场下原子团簇产生高离化Kr离子的激光波长效应

利用不同波长和光强的纳秒激光,对Kr原子团簇进行了激光电离的飞行时间质谱研究,观察到Kr高价离子价态显著地依赖于激光波长,当分别用波长为1064,532,355和266 nm的激光照射Kr原子团簇时,可分辨的离子最高价态分别为+17,+11,+4和+2价;然而离子价态与激光功率密度的依赖关系并不明显。实验结果支持多光子电离-逆轫致吸收加热-电子碰撞电离三步电离模型,表明电子碰撞电离是高价离子产生的主要途径。     

纳秒激光电离分子团簇产生高价离子实验研究

 利用飞行时间质谱仪，研究了功率密度为10⁹~10¹¹ W/cm²，波长为532 nm 的纳秒激光对苯、呋喃、甲醇及碘甲烷分子团簇的激光电离过程。实验观察到了高平动能的高价离子C^q+(q≤3)，O^q+(q≤3)和I^q+(q≤4)，该过程经历了以“初始的多光子电离引发-逆轫致吸收加热-电子碰撞电离模式”为主的激光团簇作用过程，后期经历了团簇的库仑爆炸过程。实验发现：即使激光能量变化一个量级以上时，主要高价离子的种类及占全部离子产物的比率也没有明显的变化，但是高价离子的初始平动能随激光强度的增大而增加；分子中含有较多个外壳层电子的氧、碘原子更容易电离产生高价离子，而碳离子的价态和强度相对较低。     

纳秒强光场下碘甲烷的激光电离中高价离子产生研究

利用25纳秒脉冲Nd-YAG 532 nm的激光,在1011 W cm-2的光场强度下,用飞行时间质谱对不同载气条件下碘甲烷的激光电离过程进行了研究.当利用氩作为载气时,除观察到H+,C+,CH+,CH+3,I+,CH3I+等离子外,还观察到很强的C2+,I2+和I3+离子信号.这些高价离子的最可几平动能分别为55.5 eV,9.5 eV和27 eV.质谱峰形的分裂现象以及不同载气的实验结果表明这些高价离子可能来源于碘甲烷团簇的库仑爆炸过程.     

乙醚团簇在纳秒激光场中的多价电离及其电子能量分布的研究

用5ns,1064nm的脉冲Nd:YAG激光,研究了乙醚团簇与纳秒激光的相互作用.在10¹¹ W/cm²量级光强下,观察到价电子完全剥离的O⁶⁺,C⁴⁺,且这些高价离子的强度比值基本不随激光能量而变化.用阻滞电压方法测量了电离过程中溢出电子能量分布,在最大激光能量4.0×10¹¹ W/cm²,溢出电子的平均能量为56eV,最大能量为102eV.实验结果支持了高价离子产生的“多 关键词： 高价离子 电子能量 纳秒激光 乙醚团簇     

1064 nm纳秒脉冲激光诱导硅表面微结构研究

利用Nd:YAG纳秒激光(波长为1064 nm)在不同气氛(空气、N₂,真空)中对单晶硅进行累积脉冲辐照,研究了表面微结构的演化情况.在激光辐照的初始阶段,与532和355 nm纳秒脉冲激光在硅表面诱导出波纹结构不同,1064 nm脉冲激光诱导出了微孔结构和折断线结构,并且硅的晶面取向不同,相应的折断线结构也不同.对于Si(111)面,两条折线交角为120°或60°,形成网状;而对于Si(100)面,两条折断线正交,从而将表面分成了15—20 μm的矩形块.结果表明,微孔结构的生长过程主要与相爆炸有关,而折断线的形成主要是热应力作用的结果.不同气氛对微结构形成的影响表明,刻蚀率和生长率与微结构的形成有密切的关系. 关键词： 纳秒激光 硅的微结构 相爆炸 热应力     

Comparison of nanosecond laser ablation at 1064 and 308 nm wavelength

To study the solid Cu ablation in vacuum, two different laser sources operating at 1064 and 308 nm wavelength are employed at similar values of laser fluences. The infrared laser is a Q-switched Nd:Yag having 9 ns pulse width (INFN-LNS, Catania), while the ultraviolet one is a XeCl excimer having 20 ns pulse width (INFN-LEA, Lecce). Both experiments produced a narrow angular distribution of the ejected material along the normal to the target surface. The ablation showed a threshold laser power density, of about 7 and 3 J/cm² at 1064 and 308 nm, respectively, below which the ablation effect was negligible. The laser interaction produces a plasma at the target surface, which expands very fast in the vacuum chamber. Time-of-flight (TOF) measurements of the ion emission indicated an average ion velocity of the order of 4.7×10⁴ and 2.3×10⁴ m/s for the infrared and ultraviolet radiation, respectively. We also estimated approximately the corresponding temperature of the plasma from which ions originated, i.e. about 10⁶ and 10⁵ K for IR and UV wavelength, respectively. A discussion of the analysis of the ablation mechanism is presented. At the used laser power densities the produced Cu ions showed ionisation states between 1+ and 5+ in both cases.     

Ellipticity-dependent of multiple ionisation methyl iodide cluster using 532 nm nanosecond laser

The dependence of multiply charged ions on laser ellipticity in methyl iodide clusters with 532 nm nanosecond laser was measured using a time-of-flight mass spectrometer. The intensities of multiply charged ions I^q+(q = 2–4) with circularly polarised laser pulse were clearly higher than those with linearly polarised laser pulse but the intensity of single charged ions I⁺ was inverse. And the dependences of ions on the optical polarisation state were investigated and a flower petal and square distribution for single charged ions (I⁺, C⁺) and multiply charged ions (I²⁺, I³⁺, I⁴⁺, C²⁺) were observed, respectively. A theoretical calculation was also proposed to simulate the distributions of ions and theoretical results fitted well with the experimental ones. It indicated that the high multiphoton ionisation probability in the initial stage would result in the disintegration of big clusters into small ones and suppress the production of multiply charged ions.     

纳秒激光电离分子团簇产生高离化离子的激光波长效应

利用脉冲分子束-激光电离-飞行时间质谱仪,在109～1012 W·cm-2激光功率密度条件下,考察了Nd：YAG激光器输出的1 064,532,266 nm波长的激光与苯、氨、硫化氢等团簇的相互作用。发现1 064 nm的激光可以电离分子束产生高离化态的C4+,N5+,S6+等离子;波长为532 nm的激光则电离产生价态较低的C3+,C2+,N3+,N2+, S4+,S3+以及S2+ 等离子;在266 nm波长条件下进行实验,没有产生任何高价离子。提出了一个“多光子电离引发-逆轫致吸收加热-电子碰撞电离”模型来解释高价离子的产生。激光场下电子在团簇内部的逆轫致加热是整个过程的关键步骤,电子被加热的速度正比于激光波长的平方。这可以解释为何长波长的激光有利于更高价态离子的产生。     

高电荷态离子引发氮气分子的解离和碎裂

利用时间和位置灵敏相关的符合装置,实验研究了高电荷态Xeq (q=15-21)离子与N2分子慢碰撞过程的多电子转移过程、N2 离子的解离以及N2q (1相似文献   

Ar原子团簇与飞秒强激光相互作用产生的高能离子计算

利用改进的“等离子体球”模型模拟了Ar原子团簇与飞秒强激光相互作用的物理过程.改进后的模型弱化了原模型在共振吸收附近团簇内部屏蔽电场的异常增强行为，从而使其更为合理，计算得到的Ar离子平均动能与以往的实验结果符合.还定量地研究了Ar离子平均动能及其平均电荷态与团簇尺寸以及激光参数之间的变化关系. 关键词： 团簇 飞秒激光 高能离子 共振吸收     

Physical mechanism of silicon ablation with long nanosecond laser pulses at 1064 nm through time-resolved observation

Nanosecond (ns) laser ablation can provide a competitive solution for silicon micromachining in many applications. However, most of the previous studies focus on ns lasers at visible or ultraviolet (UV) wavelengths. The research is very limited for ns lasers at infrared (e.g., 1064 nm) wavelengths (which often have the advantage of much lower cost per unit average output power), and the research is even less if the ns laser also has a long pulse duration on the order of ∼100 ns. In this paper, time-resolved observation using an ICCD (intensified charge-coupled device) camera has been performed to understand the physical mechanism of silicon ablation by 200-ns and 1064-nm laser pulses. This kind of work has been rarely reported in the literature. The research shows that for the studied conditions, material removal in laser silicon ablation is realized through surface vaporization followed by liquid ejection that occurs at a delay time of around 200-300 ns. The propagation speed is on the order of ∼1000 m/s for laser-induced plasma (ionized vapor) front, while it is on the order of ∼100 m/s or smaller for the front of ejected liquid. It has also been found that the liquid ejection is very unlikely due to phase explosion, and its exact underlying physical mechanism requires further investigations.     

Correlation functions in the theory of atomic collision cascades: Ion location and the distribution in depth and size of damage clusters

Abstract

Simple depth distribution functions of ion bombardment damage predict the spatial extension of the cumulative damage caused by a beam of ions. Correlation functions need to be considered when more detailed information is desirable, such as the average size or depth of individual damage clusters, the average location of an ion within its damage cluster, and the fluctuations of these quantities. In this paper we establish an integral equation for the pair correlation function, coupling the individual ion range with the deposited energy. This pair correlation function determines the damage caused by all those ions that come to rest at a specific penetration depth. Solutions of the integral equation are found by standard methods. Explicit results are presented for elastic scattering governed by power cross sections. The depth distribution of damage clusters turns out to be significantly narrower than the gross damage distribution at all mass ratios except for M ₁ ? M ₂, and the size distribution appears insensitive to depth when measured perpendicular to the ion beam, but varying with depth when measured parallel. Predictions on ion location suffer from a surprizingly sensitive dependence on the scattering cross section. A note on the fluctuation of the sputtering yield by individual ions concludes the paper.