Measurement of electronegativity during the E to H mode transition in a radio frequency inductively coupled Ar/O_2 plasma

This paper presents the evolution of the electronegativity with the applied power during the E to H mode transition in a radio frequency(rf)inductively coupled plasma(ICP)in a mixture of Ar and O2.The densities of the negative ion and the electron,as well as their ratio,i.e.,the electronegativity,are measured as a function of the applied power by laser photo-detachment combined with a microwave resonance probe,under different pressures and O2 contents.Meanwhile,the optical emission intensities at Ar 750.4 nm and O 844.6 nm are monitored via a spectrograph.It was found that by increasing the applied power,the electron density and the optical emission intensity show a similar trench,i.e.,they increase abruptly at a threshold power,suggesting that the E to H mode transition occurs.With the increase of the pressure,the negative ion density presents opposite trends in the E-mode and the H-mode,which is related to the difference of the electron density and energy for the two modes.The emission intensities of Ar 750.4 nm and O 844.6 nm monotonously decrease with increasing the pressure or the O2 content,indicating that the density of high-energy electrons,which can excite atoms,is monotonically decreased.This leads to an increase of the negative ion density in the H-mode with increasing the pressure.Besides,as the applied power is increased,the electronegativity shows an abrupt drop during the E-to H-mode transition.     

六边形晕斑图等离子体参数的光谱测量

在空气与氩气按比例混合组成的气体放电中,研究了由中心点和六边形晕组成的六边形晕斑图。从照片中观察六边形晕斑图结构,发现中心点和六边形晕的亮度有明显的差异,说明中心点和六边形晕可能处的等离子体状态不同。利用发射光谱法,详细研究了该六边形晕斑图结构的中心点和六边形晕的等离子体参数随压强的变化关系。实验根据氮分子第二正带系(C3Π_u→B3Π_g)谱线计算了中心点和六边形晕的分子振动温度;通过氮分子离子(391.4 nm) 与氮分子(394.1nm)谱线强度比,反映中心点和六边形晕的电子平均能量;利用氩原子696.5 nm(2P₂→1S₅)谱线的展宽,研究了电子密度。实验结果表明： 六边形晕斑图主要范围是氩气含量从60%～75%、压强从30～46 kPa。在相同的压强条件下,六边形晕比中心点的分子振动温度、电子平均能量均要高。随着压强从30 kPa逐渐升高到46 kPa,中心点和六边形晕的分子振动温度、电子平均能量是逐渐增大的。在相同的压强条件下,六边形晕比中心点的谱线展宽要大,且随着压强的升高而增加,表明电子密度随着压强的增大而升高。六边形晕和中心点的等离子体的状态不同,说明二者放电机制上的差异。进一步采用高速照相机对斑图的电流脉冲进行分脉冲瞬时拍摄,发现中心点是由先放电的体放电形成,而六边形晕是由放电晚于体放电的沿面放电形成。     

VHF-PECVD低温制备微晶硅薄膜的拉曼散射光谱和光发射谱研究

采用拉曼散射光谱和PR650光谱光度计对VHF-PECVD制备的微晶硅薄膜进行了结构表征和在线监测研究.结果表明：功率对材料的晶化率（χc）有一定的调节作用，硅烷浓度大，微调作用更明显；SiH*的强度只能在一定的范围内表征材料的沉积速率，功率大相应的速率反而下降；I［Hα*］/I［SiH*］强度比值反映了材料晶化程度，此结果和拉曼散射光谱测试结果显示出一致性；I［Hβ*］/I［Hα*］的强度比表明氢等离子体中的电子温度随功率的增大而逐渐降低. 关键词： 甚高频等离子体增强化学气相沉积 微晶硅 拉曼散射谱 光发射谱     

Effects of secondary electron emission on plasma characteristics in dual-frequency atmospheric pressure helium discharge by fluid modeling

A one-dimensional(1D) fluid simulation of dual frequency discharge in helium gas at atmospheric pressure is carried out to investigate the role of the secondary electron emission on the surfaces of the electrodes. In the simulation, electrons,ions of He~+ and He_2~+, metastable atoms of He*and metastable molecules of He*_2 are included. It is found that the secondary electron emission coefficient significantly influences plasma density and electric field as well as electron heating mechanisms and ionization rate. The particle densities increase with increasing SEE coefficient from 0 to 0.3 as well as the sheath's electric field and electron source. Moreover, the SEE coefficient also influences the electron heating mechanism and electron power dissipation in the plasma and both of them increase with increasing SEE coefficient within the range from 0 to 0.3 as a result of increasing of electron density.     

Numerical study on discharge characteristics influenced by secondary electron emission in capacitive RF argon glow discharges by fluid modeling

A one-dimensional(1D) fluid model of capacitive RF argon glow discharges between two parallel-plate electrodes at low pressure is employed. The influence of the secondary electron emission on the plasma characteristics in the discharges is investigated numerically by the model. The results show that as the secondary electron emission coefficient increases,the cycle-averaged electric field has almost no change; the cycle-averaged electron temperature in the bulk plasma almost does not change, but it increases in the two sheath regions; the cycle-averaged ionization rate, electron density, electron current density, ion current density, and total current density all increase. Also, the cycle-averaged secondary electron fluxes on the surfaces of the electrodes increase as the secondary electron emission coefficient increases. The evolutions of the electron flux, the secondary electron flux and the ion flux on the powered electrode increase as the secondary electron emission coefficient increases. The cycle-averaged electron pressure heating, electron Ohmic heating, electron heating, and ion heating in the two sheath regions increase as the secondary electron emission coefficient increases. The cycle-averaged electron energy loss increases with increasing secondary electron emission coefficient.     

气体压强对纳秒激光诱导空气等离子体特性的影响

环境气体的压强对激光诱导等离子体特性有重要影响.基于发射光谱法开展了气体压强对纳秒激光诱导空气等离子体特性影响的研究,探讨了气体压强对空气等离子体发射光谱强度、电子温度和电子密度的影响.实验结果表明,在10-100 kPa空气压强条件下,空气等离子体发射光谱中的线状光谱和连续光谱依赖于气体压强变化,且原子谱线和离子谱线强度随气体压强的变化有明显差别.随着空气压强增大,激光击穿作用区域的空气密度增加,造成激光诱导击穿空气几率升高,从而等离子体辐射光谱强度增大.空气等离子体膨胀区域空气的约束作用,增加了等离子体内粒子间的碰撞几率以及能量交换几率,并且使离子-电子-原子的三体复合几率增加,因此造成原子谱线OⅠ777.2 nm与NⅠ821.6 nm谱线强度随着气体压强增大而增大,在80 kPa时谱线强度最高,随后谱线强度缓慢降低.而离子谱线N Ⅱ 500.5 nm谱线强度在40 kPa时达到最大值,气体压强大于40 kPa后,谱线强度随压强增加而逐渐降低.空气等离子体电子密度均随压强升高而增大,在80 kPa后增长速度变缓.等离子体电子温度在30 kPa时达到最大值,气体压强大于30 kPa后,等离子体电子温度逐渐降低.研究结果可为不同海拔高度的激光诱导空气等离子体特性的研究提供重要实验基础,为今后激光大气传输、大气组成分析提供重要的技术支持.     

Spatial variation behaviors of argon inductively coupled plasma during discharge mode transition

A Langmuir probe and an ICCD are employed to study the discharge mode transition in Ar inductively coupled plasma. Electron density and plasma emission intensity are measured during the E (capacitive discharge) to H (inductive discharge) mode transitions at different pressures. It is found that plasma exists with a low electron density and a weak emission intensity in the E mode, while it has a high electron density and a strong emission intensity in the H mode. Meanwhile, the plasma emission intensity spatial (2D image) profile is symmetrical in the H mode, but the 2D image is an asymmetric profile in the E mode. Moreover, the electron density and emission intensity jump up discontinuously at high pressure, but increase almost continuously at the E to H mode transition under low pressure.     

低压下直流电弧热等离子体射流电子密度的光谱法测量

采用原子发射光谱仪研究低压直流电弧热喷涂等离子体射流的特性。利用Stark展宽法采集H_β谱线,使用其Δλ_1/2来计算等离子射流中的电子密度,研究了氢气流量、输入功率和探测距离对等离子体射流中电子密度的影响。使用Saha方程计算热等离子体的电离程度,研究了功率/氢气流量与等离子体电离程度的关系。结果表明:电子密度和电离程度随着电流强度的增大而增加;氢气流量增加可以明显提高等离子体射流的能量,但对电离程度影响不大。     

Optical emission spectroscopy study on depositionprocess of microcrystalline silicon

This paper reports that the optical emission spectroscopy (OES) is used to monitor the plasma during the deposition process of hydrogenated microcrystalline silicon films in a very high frequency plasma enhanced chemical vapour deposition system. The OES intensities (SiH\sj{*}, H微晶硅 VHF-PECVD 发射光谱学 薄膜物理学microcrystalline silicon, VHF-PECVD, optical emission spectroscopy2005-11-092005-11-092005-12-12This paper reports that the optical emission spectroscopy （OES） is used to monitor the plasma during the deposition process of hydrogenated microcrystalline silicon films in a very high frequency plasma enhanced chemical vapour deposition system. The OES intensities （Sill^＊, H^＊ and H^＊β） are investigated by varying the deposition parameters. The result shows that the discharge power, silane concentrations and substrate temperature affect the OES intensities. When the discharge power at silane concentration of 4% increases, the OES intensities increase first and then are constant, the intensities increase with the discharge power monotonously at silane concentration of 6%. The SiH^＊ intensity increases with silane concentration, while the intensities of H^＊α and H^＊β increase first and then decrease. When the substrate temperature increases, the SiH^＊ intensity decreases and the intensities of H^＊α and H^＊β are constant. The correlation between the intensity ratio of IH^＊α/ISiH^＊ and the crystalline volume fraction （Xc） of films is confirmed.     

托卡马克高场侧低杂波电流驱动模拟研究

利用GENRAY/CQL3D程序研究了EAST装置双零位形下高场侧和低场侧发射低杂波的电流驱动情况.模拟发现,电子密度较小时,高场侧低杂波电流驱动效果不如低场侧.随着电子密度的增加,高场侧低杂波电流驱动的优势逐渐显现,从高场侧发射的低杂波可以将能量沉积在更加靠近等离子体中心的位置.提高环向磁场强度有利于低杂波在高密度条...     

Changes of the electron dynamics in hydrogen inductively coupled plasma

Changes of the electron dynamics in hydrogen （H2） radio-frequency （RF） inductively coupled plasmas are investigated using a hairpin probe and an intensified charged coupled device （ICCD）. The electron density, plasma emission intensity, and input current （voltage） are measured during the E to H mode transitions at different pressures. It is found that the electron density, plasma emission intensity, and input current jump up discontinuously, and the input voltage jumps down at the E to H mode transition points. And the threshold power of the E to H mode transition decreases with the increase of the pressure. Moreover, space and phase resolved optical emission spectroscopic measurements reveal that, in the E mode, the RF dynamics is characterized by one dominant excitation per RF cycle, while in the H mode, there are two excitation maxima within one cycle.     

微隙介质阻挡放电装置中的空气均匀放电光谱特性

大气压空气中介质阻挡均匀放电产生的等离子体在工业领域具有广阔的应用前景,为研究其产生条件及机理,利用微间隙介质阻挡放电装置,在大气压空气中实现了均匀放电。电学实验结果表明,低电压时电流波形在电压每半个周期存在若干个脉冲宽度很小的脉冲,肉眼观察到大量的微放电丝,随着外加电压增加,放电功率逐渐增加,放电空间内微放细丝增多。当电压增大到9.2 kV时,电流波形在电压每半个周期只存在一个宽度较大(约5.5 μs)强度较强的脉冲,观察不到微放电丝,微放电最终扩展叠加形成均匀放电。采集了光谱范围为330～420 nm的发射光谱,氮分子第二正带系337.1 nm的谱线强度明显比氮分子离子第一负带系391.4 nm的强。将337.1 nm谱线的强度归一,391.4 nm谱线的强度即反应了电子平均能量的大小,同时拟合计算了反映分子内部能量的氮分子振动温度。结果表明电子平均能量和分子内部能量都随外加电压的增加而降低。表明放电空间电场能量较低时不容易形成丝状放电,均匀放电模式中电子平均能量比微放电丝放电模式中的低。这些结果对于空气中介质阻挡均匀放电在工业应用方面具有一定的指导意义。     

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采用Langmuir探针法结合发射光谱法对螺旋波诱导的低压氢等离子体进行诊断,根据Druyvesteyn 方法和日冕模型分析电子能量几率函数(EEPF)、有效电子温度(Teff)、电子密度(ne)及激发态氢原子密度(nH*)随实验参数的变化规律.结果表明:随射频功率(Prf)、气压(p)和约束磁场(B)的增大,EEPF峰位由高能向低能移动,Teff 下降;当Prf从25W增大至35W左右时,ne发生跳跃增长,而nH*始终随Prf增大线性增长;随p增大,ne和nH*都呈现先增加后减小的变化规律;随B增强,ne线性增长,而nH*先增大后减小.     

The effect of ambient pressure on laser-induced plasmas in air

A detailed investigation of the effect of ambient pressure in the range of 0.1 to 1.0 atm on the size, temperature, electron number density, and fraction of laser energy absorbed in a laser-induced plasma in air has been conducted. As pressure is reduced the size of the plasma, its electron number density, its peak emission intensity, and the fraction of incident laser energy that is absorbed are all found to decrease significantly. The temporal temperature profile in the plasma and the fraction of the absorbed laser energy that is converted to thermal energy in the plasma remain constant, at least down to 0.2 atm.     

狭缝微放电等离子体参数的光谱测量

利用平行管水电极介质阻挡放电装置,在氩气和空气混合气体中,得到了狭缝微放电等离子体。利用发射光谱法,研究了此放电中分子振动温度、分子转动温度和电子的平均能量随气体压强的变化。通过氮分子第二正带系(C3Πu→B3Πg)的发射谱线计算了氮分子的振动温度;利用氮分子离子(N2+)的第一负带系(B2Σu+→X2Σg+)的发射谱线计算了氮分子的转动温度;测量了氮分子离子391.4 nm和激发态的氮分子337.1 nm两条发射谱线的相对强度之比,研究了电子能量的变化。结果表明,当压强从60 kPa增大到100kPa,分子振动温度及分子转动温度均减小,氮分子离子谱线与激发态的氮分子谱线的强度之比亦减小。     

压强对介质阻挡放电中八边形结构等离子体温度的影响

利用水电极介质阻挡放电装置,在氩气和空气的混合气体中,首次观察到了由点和线组成的八边形结构。采用发射光谱法,研究了八边形结构中的点和线的等离子体温度随压强的变化关系。利用氮分子第二正带系(C3Π_u→B3Π几_g)的发射谱线,计算了点和线的分子振动温度;通过氮分子离子391.4 nm和氮分子394.1 nm两条发射谱线的相对强度比,研究了点和线的电子平均能量大小变化;利用氩原子763.26 nm(2P₆→1S₅)和772.13 nm(2P₂→1S₃)两条谱线强度比法,得到了点和线的电子激发温度。实验发现：在同一压强条件下,线比点的分子振动温度、电子平均能量以及电子激发温度均高;随着气体压强从40 kPa增大到60 kPa,点和线的分子振动温度、电子平均能量以及电子激发温度均减小。     

The influence of Exciting Frequency on N2 and N2+ Vibrational Temperature of Nitrogen Capacitively Coupled Plasma

By using optical emission spectroscopy （OES）, N2 and N2^＋ vibrational temperatures in capacitively coupled plasma discharges with different exciting frequencies are investigated. The vibrational temperatures are acquired by comparing the measured and calculated spectra of selected transitions with a least-square procedure. It is found that N2 and N2^＋ vibrational temperatures almost increase linearly with increasing exciting frequency up to 23 MHz, then increase slowly or even decrease. The pressure corresponding to the maximum point of N2 vibrational temperature decreases with the increasing exciting frequency. These experimental phenomena are attributed to the increasing electron density, whereas the electron temperature decreases with exciting frequency rising.     

Generation of uniform atmospheric pressure argon glow plasma by dielectric barrier discharge

In this paper, atmospheric pressure glow discharges (APGD) in argon generated in parallel plate dielectric barrier discharge system is investigated by means of electrical and optical measurements. Using a high voltage (0–20 kV) power supply operating at 10–30 kHz, homogeneous and steady APGD has been observed between the electrodes with gap spacing from 0.5 mm to 2 mm and with a dielectric barrier of thickness 2 mm while argon gas is fed at a controlled flow rate of 1 l/min. The electron temperature and electron density of the plasma are determined by means of optical emission spectroscopy. Our results show that the electron density of the discharge obtained is of the order of 10¹⁶ cm^???3 while the electron temperature is estimated to be 0.65 eV. The important result is that electron density determined from the line intensity ratio method and stark broadening method are in very good agreement. The Lissajous figure is used to estimate the energy deposited to the glow discharge. It is found that the energy deposited to the discharge is in the range of 20 to 25 μJ with a discharge voltage of 1.85 kV. The energy deposited to the discharge is observed to be higher at smaller gas spacing. The glow discharge plasma is tested to be effective in reducing the hydrophobicity of polyethylene film significantly.     

高速微晶硅薄膜沉积过程中的等离子体稳态研究

通过光发射光谱监测高速沉积微晶硅薄膜过程中I(H_α^*)/I(SiH^*) 随沉积时间的变化趋势, 分析高速率微晶硅薄膜纵向晶化率逐渐增大的原因. 通过氢稀释梯度法, 即硅烷浓度梯度和氢气流量梯度法来改善材料的纵向均匀性.结果表明: 硅烷浓度梯度法获得的材料晶化率从沉积300 s时的53%增加到沉积600 s时的62%, 相比于传统方式下纵向晶化率从55%到75%的变化有了明显的改善. 在硅烷耗尽的情况下, 增加氢气流量一方面增加了气体总流量, 使得电子碰撞概率增加, 电子温度降低, 从而降低氢气的分解, 抑制SiH_x基团的放氢反应, 同时背扩散现象也得到了一定的缓解, 使得I(H_α^*)/I(SiH^*) 在沉积过程中逐渐增加的趋势有所抑制, 所制备的材料的纵向晶化率在240 s 后维持在53%-60%范围内, 同样改善了薄膜的纵向结构. 关键词： 光发射光谱 高速沉积 微晶硅 纵向结构均匀性     

Development of a nanosecond discharge-enhanced laser plasma spectroscopy

A nanosecond pulse discharge circuit is developed and used to enhance the optical emission of laser plasma. An intense discharge spark was observed with a peak discharge current of 1.9 kA and a peak power of 6.5 MW. The main electric energy deposition only lasted for ～40 ns. An intense optical emission was observed. The line intensity of plasma emission was greatly increased along with an improved signal-to-noise ratio, in comparison with that using a microsecond pulse discharge circuit. From the measured spectra, electron temperature and electron number density were estimated. The mechanism of the optical emission enhancement was briefly discussed.