THz imaging of cyclotron emission in quantum Hall conductors

Recent studies of cyclotron emission microscopy on quantum Hall related states are reported. The topics include non-equilibrium between edge and bulk states, current-induced breakdown of the quantum Hall effect, and the emission threshold at hot spots. Experimental method of scanning-type terahertz microscopes developed towards photon-counting level sensitivity is also described.     

Spectral measurement of weak THz waves with quantum Hall detectors

A terahertz (THz) microspectroscope is developed, in which the frequency of extremely weak THz radiation is resolved by scanning the magnetic field for a quantum Hall detector. The electron density of the detectors is controlled by the back-gate biasing, so that the detector sensitivity is calibrated over a spectral range studied. Reliable spectral measurements with a spectral resolution of 1.2 cm⁻¹ has been made with a sensitivity better than 10 femtowatt level over 1 s integration time.     

Theory of four-dimensional fractional quantum Hall states

We propose a pseudo-potential Hamiltonian for the Zhang-Hu’s generalized fractional quantum Hall states to be the exact and unique ground states. Analogously to Laughlin’s quasi-hole (quasi-particle), the excitations in the generalized fractional quantum Hall states are extended objects. They are vortex-like excitations with fractional charges +(−)1/m³ in the total configuration space CP³. The density correlation function of the Zhang-Hu states indicates that they are incompressible liquid.     

Anomalous quantum Hall effect induced by nearby quantum dots

Transport measurements in high magnetic fields have been performed on two-dimensional electron system (2DES) separated by a thin barrier layer from a layer of InAs self-assembled quantum dots (QDs). Clear feature of quantum Hall effect was observed in spite of presence of QDs nearby 2DES. However, both magnetoresistance, ρ_xx, and Hall resistance, ρ_xy, are suppressed significantly only in the magnetic field range of filling factor in 2DES ν<1 and voltage applied on a front gate . The results indicate that the electron state in QDs induces spin-flip process in 2DES.     

Thermodynamic properties of a quantum Hall anti-dot interferometer

We study quantum Hall interferometers in which the interference loop encircles a quantum anti-dot. We base our study on thermodynamic considerations, which we believe reflect the essential aspects of interference transport phenomena. We find that similar to the more conventional Fabry–Perot quantum Hall interferometers, in which the interference loop forms a quantum dot, the anti-dot interferometer is affected by the electro-static Coulomb interaction between the edge modes defining the loop. We show that in the Aharonov–Bohm regime, in which effects of fractional statistics should be visible, is easier to access in interferometers based on anti-dots than in those based on dots. We discuss the relevance of our results to recent measurements on anti-dots interferometers.     

Integer quantum Hall effect in a PbTe quantum well

Transport measurements have been carried out on a 10 nm n-type PbTe/Pb_0.9Eu_0.1Te quantum well at millikelvin temperatures. The Hall and longitudinal resistances are measured in a Van der Pauw geometry under high magnetic fields up to 23 T. A robust signature of the integer quantum Hall effect is observed without any sign of parasitic parallel conduction. The unconventional sequence of filling factors associated with the integer quantum Hall effect is discussed in terms of the occupancy of multiple valleys.     

Spin-dependent resistivity and quantum Hall ferromagnetism in two-dimensional electrons confined to AlAs quantum wells

We observe a strong dependence of the amplitude and field position of longitudinal resistivity (ρ_xx) peaks in the spin-resolved integer quantum Hall regime on the spin orientation of the Landau level (LL) in which the Fermi energy resides. The amplitude of a given peak is maximal when the partially filled LL has the same spin as the lowest LL, and amplitude changes as large as an order of magnitude are observed as the sample is tilted in field. In addition, the field position of both the ρ_xx peaks and plateau–plateau transitions in the Hall resistance shift depending on the spin orientation of the LLs. The spin dependence of the resistivity points to a new explanation for resistivity spikes, associated with first-order quantum Hall ferromagnetic transitions, that occur at the edges of quantum Hall states.     

Detecting the Anomalous Quantum Hall phase under magnetic field

Detecting the charming topological phase has been an ongoing topic. In this work, we take the square lattice as an example and try to detect the anomalous quantum Hall (AQH) phase under magnetic field. We analyze the topological energy levels of the system, the quantum Hall effect and quantum valley Hall effect, and the number of scattered electrons after a laser pulse, from which the unambiguous signals to characterize the AQH phases can be obtained. Meanwhile the corresponding valley polarizations of electrons are investigated. Our study opens new perspectives for the applications of valleytronics in the future.     

Ballistic transport under quantum Hall effect conditions

The paper addresses details of the single-particle electron spectrum ?_l(p)${?}_l(p)$ in narrow Coulomb channels (l is the transverse spectrum part discrete index and p   is the continuous longitudinal electron momentum). The channel is said to be narrow if differences between transverse spectrum branches ?_l(p)${?}_l(p)$ are larger than temperature. Considered are two extreme cases with respect to magnetic field. For the first case where ?_F≥?ω_c${?}_F\ge \mathit{?}{\omega }_c$, the spectrum ?_l(p)${?}_l(p)$ first calculated by Stern et al. numerically is obtained with approximate analytical analysis (here ?_F${?}_F$ is the Fermi energy of the 2D electron system ?ω_c$\mathit{?}{\omega }_c$ is the cyclotron frequency). In the second case the proposed formalism is extended to high magnetic fields satisfying the inequality ?_F≤?ω_c${?}_F\le \mathit{?}{\omega }_c$. Calculated results are compared with available experimental data.     

GaAs半导体量子箱中电子的斯塔克效应

在有效质量近似下,利用变分法研究了在GaAs半导体量子箱中电子能量的斯塔克效应.结论表明：电场平行于量子箱的中心轴时,斯塔克能移只与量子箱高度有关;电场垂直于中心轴时,斯塔克能移仅仅与它的截面尺寸有关.当电场方向与中心轴夹角为任意角时,斯塔克能移与高度和截面都有关.同时在低场和高场极限下,理论上分析了电场大小和量箱尺寸对斯塔克能移的影响.     

GaAs半导体量子箱中电子的斯塔克效应

在有效质量近似下,利用变分法研究了在GaAs半导体量子箱中电子能量的斯塔克效应.结论表明:电场平行于量子箱的中心轴时,斯塔克能移只与量子箱高度有关;电场垂直于中心轴时,斯塔克能移仅仅与它的截面尺寸有关.当电场方向与中心轴夹角为任意角时,斯塔克能移与高度和截面都有关.同时在低场和高场极限下,理论上分析了电场大小和量箱尺寸对斯塔克能移的影响.     

Electrostatic theory for imaging experiments on local charges in quantum Hall systems

We use a simple electrostatic treatment to model recent experiments on quantum Hall systems, in which charging of localised states by addition of integer or fractionally charged quasiparticles is observed. Treating the localised state as a compressible quantum dot or antidot embedded in an incompressible background, we calculate the electrostatic potential in its vicinity as a function of its charge, and the chemical potential values at which its charge changes. The results offer a quantitative framework for analysis of the observations.     

Temperature-dependent theory of tunneling in the fractional quantum Hall effect

Recent experiments have studied the tunneling current between two edges of the same fractional quantum Hall liquid as a function of temperature and voltage. The experimental findings for low temperatures are at odds with the model where the edges are described as chiral Luttinger liquids, while the data at high temperatures are quite consistent with the same model. Here, we argue that a temperature dependence of the tunneling amplitude, not foreseen in previous works, can explain this discrepancy.     

Experimental probes of emergent symmetries in the quantum Hall system

Experiments studying renormalization group flows in the quantum Hall system provide significant evidence for the existence of an emergent holomorphic modular symmetry Γ₀(2)${\Gamma }_0(2)$. We briefly review this evidence and show that, for the lowest temperatures, the experimental determination of the position of the quantum critical points agrees to the parts per mille   level with the prediction from Γ₀(2)${\Gamma }_0(2)$. We present evidence that experiments giving results that deviate substantially from the symmetry predictions are not cold enough to be in the quantum critical domain. We show how the modular symmetry extended by a non-holomorphic particle–hole duality leads to an extensive web of dualities related to those in plateau–insulator transitions, and we derive a formula relating dual pairs (B,Bd)$(B,B_d)$ of magnetic field strengths across any transition. The experimental data obtained for the transition studied so far is in excellent agreement with the duality relations following from this emergent symmetry, and rule out the duality rule derived from the “law of corresponding states”. Comparing these generalized duality predictions with future experiments on other transitions should provide stringent tests of modular duality deep in the non-linear domain far from the quantum critical points.     

Nuclear-spin-lattice relaxation in a bilayer quantum Hall system

We examined the electron spin degree of freedom around the total Landau-level filling factor ν=1 in a bilayer system via nuclear spins. In a balanced bilayer system, nuclear-spin-lattice relaxation rate 1/T₁, which probes low-energy electron spin fluctuations, increases gradually as the system is driven from the quantum Hall (QH) state through a phase transition to the compressible state. This result demonstrates that the electron spin degree of freedom is not frozen either in the QH or compressible states. Furthermore, as the density difference between the two layers is increased from balanced bilayer to monolayer configurations, 1/T₁ around ν=1 shows a rapid yet smooth increase. This suggests that pseudospin textures around the bilayer ν=1 system evolves continuously into the spin texture for the monolayer system.     

Observation of the quantum Hall effect in cleaved InAs surfaces

We have performed the in-plane magnetotransport measurements on the two-dimensional electron gas at the cleaved p-InAs (1 1 0) surface by deposition of Ag. The surface electron density N_s is determined from the Hall coefficient at . The coverage dependence of N_s is well explained by the assumption that each adsorbed Ag atom denotes one electron into InAs until the surface Fermi level reaches the adsorbate-induced donor level. The electron mobility μ is about and does not show a clear dependence on the coverage over . In the high-magnetic field regime of B>1/μ, Shubnikov–de Hass oscillations were observed. A beating pattern due to the strong spin–orbit interaction appears for high N_s. For lower N_s of , an apparent quantum Hall plateau for ν=4 and vanishing of the longitudinal resistivity were observed around .     

Theory of the integer quantum Hall effect in graphene

A Hall resistivity formula for the 2DES in graphene is derived from the zero-mass Dirac field model adopting the electron reservoir hypothesis. The formula reproduces perfectly the experimental resistivity data [K.S. Novoselov, et al., Nature 438 (2005) 201]. This perfect agreement cannot be achieved by any other existing models. The electron reservoir is shown to be the 2DES itself.     

The enigma of the quantum Hall effect in graphene

We apply Laughlin’s gauge argument to analyze the ν=0 quantum Hall effect observed in graphene when the Fermi energy lies near the Dirac point, and conclude that this necessarily leads to divergent bulk longitudinal resistivity in the zero temperature thermodynamic limit. We further predict that in a Corbino geometry measurement, where edge transport and other mesoscopic effects are unimportant, one should find the longitudinal conductivity vanishing in all graphene samples which have an underlying ν=0 quantized Hall effect. We argue that this ν=0 graphene quantum Hall state is qualitatively similar to the high field insulating phase (also known as the Hall insulator) in the lowest Landau level of ordinary semiconductor two-dimensional electron systems. We establish the necessity of having a high magnetic field and high mobility samples for the observation of the divergent resistivity as arising from the existence of disorder-induced density inhomogeneity at the graphene Dirac point.     

Anyons and the quantum Hall effect—A pedagogical review

The dichotomy between fermions and bosons is at the root of many physical phenomena, from metallic conduction of electricity to super-fluidity, and from the periodic table to coherent propagation of light. The dichotomy originates from the symmetry of the quantum mechanical wave function to the interchange of two identical particles. In systems that are confined to two spatial dimensions particles that are neither fermions nor bosons, coined “anyons”, may exist. The fractional quantum Hall effect offers an experimental system where this possibility is realized. In this paper we present the concept of anyons, we explain why the observation of the fractional quantum Hall effect almost forces the notion of anyons upon us, and we review several possible ways for a direct observation of the physics of anyons. Furthermore, we devote a large part of the paper to non-abelian anyons, motivating their existence from the point of view of trial wave functions, giving a simple exposition of their relation to conformal field theories, and reviewing several proposals for their direct observation.     

An alternative formulation of Hall effect and quantum phases in noncommutative space

A recent method of constructing quantum mechanics in noncommutative coordinates, alternative to implying noncommutativity by means of star product is discussed. Within this approach we study Hall effect as well as quantum phases in noncommutative coordinates. The θ-deformed phases which we obtain are velocity independent.