约束刻蚀剂层技术对金属铝的微结构加工研究

采用约束刻蚀剂层技术, 以亚硝酸钠为先驱物, 通过电化学氧化产生刻蚀剂(硝酸)刻蚀铝, 并以NaOH为捕捉剂, 在电极模板上形成约束刻蚀剂层. 在金属铝表面加工出梯型槽微结构, 加工分辨率约为500 nm. 通过测量表面氢离子浓度, 对捕捉剂的约束效果进行了分析.     

镁合金表面微结构阵列的电化学微加工

研究了镁合金的约束刻蚀微加工方法. 通过对电解过程中电极表面氢离子浓度变化以及刻蚀体系对镁合金的腐蚀速率的测量与分析, 对一些可能有刻蚀作用的刻蚀体系进行了研究. 选用亚硝酸钠作为产生刻蚀剂(硝酸)的前驱体、氢氧化钠作为捕捉剂、少量硅酸钠作为缓蚀剂的约束刻蚀体系, 使用具有规整三维微立方体点阵结构的模板, 在金属镁表面加工出具有与模板互补特性的点阵微结构, 复制加工的分辨率为亚微米级. 并对刻蚀过程机理进行了探讨与分析.     

超声刻蚀法构建分级结构的超疏水表面

在湿法刻蚀和超声空化的基础上, 采用超声刻蚀法制备了具有微纳米分级结构的超疏水表面. 以等体积比的硝酸/乙醇(体积分数为4%)和双氧水(质量分数为30%)的混合溶液作为刻蚀剂, 在室温下对60Si2Mn钢、 60^#钢、 T10钢、 Cr06钢、 65Mn钢和硅钢表面超声刻蚀2~10 min, 构建出多种形貌的微纳米分级结构. 上述表面经氟硅烷修饰后具有超疏水性, 水的表观接触角高达157.0°, 155.8°, 157.4°, 154.9°, 157.6°和156.8°, 滚动角分别为6.5°, 19.2°, 6.1°, 7.8°, 6.7°和7.2°. 与常规刻蚀方法相比, 超声刻蚀的化学刻蚀作用因与空化作用耦合而得到强化和改变, 从而在钢表面构建出分级结构. 由于材料表面微结构形貌和固/液界面接触状态不同, 制得的超疏水表面表现出的润湿行为也不同. 超声刻蚀法简单易行, 成本低廉, 适用于其它金属表面构建微纳米分级结构和超疏水表面.     

镍表面三维微图形的复制加工

运用约束刻蚀剂层技术(CELT)在金属镍(Ni)表面实现三维微图形加工,以规整的三维齿状微结构作模板,获得可有效CELT加工的化学刻蚀和捕捉体系,在Ni表面得到了与齿状结构互补的三维微结构并应用扫描电子显微镜(SEM)和原子力显微镜(AFM)表征刻蚀图案,证实CELT可用于金属表面Ni的三维微图形刻蚀加工．     

激光刻蚀硅表面的形貌及其对浸润性的影响

利用脉冲激光在Si表面刻蚀具有不同宽度和深度的微槽形貌, 通过测量接触角的大小研究其浸润特性, 并分析了形貌与浸润性的关系. 结果表明, 在Si表面刻蚀微槽深度一定的条件下, 刻蚀微槽宽度越宽, 接触角越小; 在Si表面刻蚀微槽宽度一定的条件下, 刻蚀微槽越深, 接触角越大, 最高可达165°. 而且Si表面上刻蚀后产生的细微尖峰结构对其浸润特性有显著的影响. 因此, 利用激光刻蚀表面方法可以在一定程度上调控固体表面的润湿性能.     

偶氮苯聚合物的光控图案化

将自组装得到的聚苯乙烯胶体晶体,利用反应离子刻蚀和软刻蚀法复形到偶氮苯聚合物膜表面,获得六方非紧密排列的偶氮苯聚合物半球状阵列微图案膜。采用场发射扫描电子显微镜(FESEM)、原子力显微镜(AFM)和接触角测量仪等对膜的微阵列结构和表面润湿性能进行了表征。研究了光照对膜微图案结构和润湿性能的影响。结果表明:基于偶氮苯基团的光致取向特性,偶氮苯聚合物膜的微图案在偏振光照射下,可由初始的半球状阵列微结构形变成纺锤状和椭球状等结构,这种微结构的改变可以改变膜表面润湿性,实现偶氮苯聚合物膜表面不同微图案和润湿性能的光照调控。     

简单方法制备与表征新颖复合凝胶及表面微结构——由科研成果转化的化学综合实验

材料表面的微结构会赋予材料独特的性能，水凝胶在生物医学领域有广泛的应用前景。采用紫外光刻蚀法创新性地实现了复合凝胶的制备和凝胶表面图案化微结构的构筑一步完成；通过原子力显微镜和光学显微镜的表征，复合凝胶聚N-异丙基丙烯酰胺/聚乙二醇二丙烯酸酯兼具了温敏性能与图案化微结构的新颖性能结构特征。本实验有助于培养学生的创新意识，激发学生的学习兴趣以及未来从事科研的兴趣。     

半导体的化学刻蚀

半导体的化学刻蚀，俗称湿法刻蚀，它是半导体器件制作中的一个重要工艺，按照化学作用的原理，它可分为化学反应刻蚀、电化学刻蚀和光电化学刻蚀，半导体的化学刻蚀是在众多刻蚀方法中最基本和最终不能全部被取代的一种方法，它在高新技术中有着各种挂用途，如选择准刻蚀、各向异性刻蚀和计算机控制无掩模刻蚀等。     

双级微结构上二氧化硅粒子对微注压成型PP表面润湿特性的影响

提出一种柔性复制法,采用微注射压缩(μ-ICM)成型具有微拓扑结构的仿生聚丙烯(PP)表面.通过复制模板上的双级微结构,所成型的PP材料表面上呈现具有锥形顶面的双级微结构,即微棱和高纵横比的微锥体.由于微锥体之间的间隙较大,水滴浸润其间隙的上方,这使该表面呈现中等黏附的超疏水特性.在μ-ICM过程中,涂覆在模板上的二氧化硅纳米粒子(SNPs)被转移到熔体中,并牢牢附着于微结构表层,赋予其表面亚微米或微米粗糙度,形成多层次微结构.在附着有亲水SNPs的微结构上,高表面自由能使水滴完全浸润微锥体之间的间隙,表面的水接触角为161.9°、滚动角大于90°,呈现极高黏附的超疏水特性(花瓣效应);在附着有疏水SNPs的微结构上,水滴受疏水SNPs的排斥而减弱与表面之间的黏附作用,表面的水接触角为163.5°、滚动角为3.5°,呈现极低黏附的超疏水特性(荷叶效应).     

基于聚丙烯酰胺凝胶软印章的电化学纳米加工(英文)

电化学刻蚀使用腐蚀性小的电解质溶液,且溶液可使用周期长,是一种环境友好的加工工艺.本文采用聚丙烯酰胺水凝胶(PAG)作为软印章,辅以优化工艺,将电化学湿印章技术(E-WETS)的加工精度从几十微米提高到了200纳米.将新配制的聚丙烯酰胺水凝胶浇注在具有纳米结构的软模板表面,固化后脱模并保存于0.2mol·L-1KCl溶液中,在合适电位和压力下,对硅片表面金膜进行电化学湿法刻蚀,分别研究了聚丙烯酰胺水凝胶的聚合条件、电化学加工电位以及水凝胶表面压力对加工结果的影响.实验表明,在最优条件下可加工出直径为200纳米的特征点阵结构,且该方法具有较好的可靠性和稳定性。     

Site-selective chemical etching of silicon using patterned silver catalyst

Si convex arrays and Si hole arrays with ordered periodicities were fabricated by the site-selective chemical etching of a Si substrate using patterned Ag nanoparticles as a catalyst. Ag particles were deposited selectively on the Si substrate by a combination of colloidal crystal templating, hydrophobic treatment and subsequent electroless plating. The obtained Ag patterns were of two different types: network-like honeycomb and isolated-island microarrays. The transfer of ordered patterns fabricated by Ag plating onto the Si substrate could be achieved by the selective chemical etching of a Ag-coated Si area using Ag particles as the etching catalyst. On the basis of this process, it is possible to fabricate negative and positive patterns by changing the arrangement of deposited Ag patterns.     

Facile fabrication of 2-dimensional arrays of sub-10 nm single crystalline Si nanopillars using nanoparticle masks

A simple procedure for the fabrication of sub-10 nm scale Si nanopillars in a 2-D array using reactive ion etching with 8 nm Co nanoparticles as etch masks is demonstrated. The obtained Si nanopillars are single crystalline tapered pillar structures of 5 nm (top) x 8 nm (bottom) with a density of approximately 4 x 10(10) pillars cm(-2) on the substrate, similar to the density of Co nanoparticles distributed before the ion etching process. The uniform spatial distribution of the Si nanopillars can also be patterned into desired positions. Our fabrication method is straightforward and requires mild process conditions, which can be extended to patterned 2-D arrays of various Si nanostructures.     

Area-selective formation of macropore array by anisotropic electrochemical etching on an n-Si(100) surface in aqueous HF solution

A photoassisted anodization process to fabricate arrays of uniform and straight macropores at selected areas of a Si wafer surface was developed. The front- and backside surfaces of n-type Si(100) wafers were coated with a thin Si(3)N(4) layer, and the frontside layer was micro-patterned using photolithography and reactive ion etching to form an array of microscopic openings at selected areas. The inverted pyramid-shape micropits were formed at these openings by anisotropic etching using aqueous KOH solution; these pits act as the initiation sites for the anodization to form macropores. The electrochemical etching was carried out in aqueous HF solution under illumination from the backside of the wafer, on which Au/Cr electric contact was formed following removal of the Si(3)N(4) layer. To improve the uniformity of the formation condition of the macropores at the selected area, holes were area-selectively generated by controlling the illumination condition during the anodization. For this, micropatterns were formed on the Au/Cr layer at the backside surface, which were aligned to those at the frontside surface. The parameters, such as HF concentration, current density, and wafer thickness, i.e., hole diffusion length, were optimized, and the arrays of uniform and high-aspect-ratio macropores were formed at the selected area of the domain at the silicon surface.     

Evolution of Etching Kinetics and Directional Transition of Nanowires Formed on Pyramidal Microtextures

Two‐scale roughened silicon (Si) textures are considered promising architectures for versatile applications because of their excellent self‐cleaning, light‐trapping, and biosensing capacities. In this study, we explore the directional control of nanowires formed on pyramidal microtextures through a single‐step metal‐assisted chemical etching (MACE). The measured current density of Si dissolution at catalytic etching enables quantitative monitoring of the etching kinetics of nanowire formation. The preferential orientation of fabricated nanowires on {111}‐plane pyramidal textures was found to positively correlate with the molar ratio of [AgNO₃] to ([AgNO₃]+[HF]), referred to as ρ. A distinct transition from <100> to <111> axial directions at ρ≥0.2 and ρ=0.07, respectively, was revealed. The <111>‐oriented nanowires on the pyramidal microtextures exhibited an excellent antireflection performance, with a reflectivity as low as 1.2 % at 600 nm. The results of this study may aid the design for the development of high‐performance Si‐based optoelectronic devices.     

Fabrication of highly antireflective silicon surfaces with superhydrophobicity

Highly antireflective porous silicon surfaces with superhydrophobicity were obtained by means of chemical etching and fluoroalkylsilane self-assembly. The results show that wettability and reflectivity of these surfaces strongly depend on the etching method and the resultant surface morphology. All of the four resultant porous silicon surfaces by alkaline etching, acidic etching, thick Pt-assisted acidic etching, and thin Pt-assisted acidic etching can reduce reflectance, but the efficiency differs greatly. Except for the alkaline etching, the porous silicon surfaces produced by the other three etching methods can reach superhydrophobicity after fluoroalkylsilane modification. These differences are due to the different surface morphology and roughness. Moreover, the porous silicon surface produced by thin Pt-assisted acidic etching presents abundant holes and particles with diameters ranging from nanometers to submicrometers. This morphology enables the porous silicon surface to own a very low reflectance value that is averaged to be about 3% over the whole experimental photon wavelength spanning 300-800 nm.     

Positive microcontact printing

Microcontact printing alkanethiols from an inked, microstructured stamp onto Au or Cu results in the formation of a self-assembled monolayer, which can locally protect the substrate from wet etching. This lithographic technique resembles a negative-type of lithography but can be inverted to the positive process. This is done by printing a type of oligothiol that does not protect the substrate from etching but prevents the adsorption of a protective monolayer from solution.     

Depth profiling by means of the combination of glancing incidence X-ray fluorescence spectrometry with low energy ion beam etching technique

Experiments using a combination of laterally resolved glancing incidence X-ray fluorescence spectrometry in the vicinity of the critical angle of total reflection and ion beam ramp etching were performed to work out a new technique for depth profiling in solid-state thin films with nanometre resolution. The lateral point-to-point resolution of the total-reflection X-ray fluorescence (TXRF) spectrometer used was determined as 200 ± 10 μm by means of standard samples (Cr bars on Si). At an inclination angle in the range of 10⁻⁴ degrees for the ramp, which has been produced by ion beam etching, the geometrically covered depth is in the range of 1 nm. In order to demonstrate the potential of the new technique, preliminary results on Cu/Cr multilayers on Si substrate are presented.     

硅(100)晶面上硅和二氧化硅的横向与纵向腐蚀速率

The method established previously for studying the etching rates of micro-scale silicon and silica was used to study the etching process of silicon and silica on the Si（100）surface. Photolithography was used to pattern a positive photoresist mask to confine the etching area,and the atomic force microscopy was used to probe the etched surface. The lateral etching rate of silicon or silica on the silicon surface was defined,and the lateral and longitudinal etching rates of silicon and silica on the Si（100）surface in 40% ammonium fluoride aqueous solution were measured. The effect of the dissolved oxygen on the etching rates was studied by bubbling the solution with high purity nitrogen. The lateral and longitudinal etching rates of silicon and silica on the（100）surface increase with temperatures except for the lateral etching rate of silica in a N2 -bubbled solution which probably reaches the limit of diffusion controlled reaction. The etching rates of silicon and thermal silica on the Si（100）surface show remarkable difference with that on the Si（111）surface in both air-saturated and N2 -bubbled solutions. The apparent activation energies for the silicon and silica etching processing in ammonium fluoride solution were obtained from the etching rates at different temperatures in the range 20. 6-34. 1℃. The similarity of the apparent activation energies for the etching processing of silicon and silica on the（100）surface to that on the（111）surface probably suggests that the rate-determined-step is the same in both cases. A lot of gas bubbles are seen to aggregate on the surface in silicon dissolution process at 38. 2℃,and it is found that the gas bubbles have great influence on the silicon etching rate. The formation of bubbles accelerates the silicon dissolution at the beginning but blocks the etching as the bubbles gradually aggregate on the surface.     

Highly ordered chevron-shaped arrays of continuous copper nano-dot lines formed by electroless deposition on hydrogen-terminated Si(111) surfaces

We have succeeded in forming highly ordered chevron-shaped arrays of continuous copper nano-dot lines by electroless deposition on hydrogen-terminated Si(111) (H-Si(111)) surfaces. Detailed investigations have shown that tiny Cu clusters are preferentially formed at step edges when the electroless deposition is carried out in a deoxygenated neutral aqueous solution of a low Cu2+ concentration (less than 10 microM) with pH approximately = 7. This finding was combined with highly ordered step-edge lines on H-Si(111) prepared by the previously reported method of Teflon scratching and NH4F etching, which has led to the above success. The present result indicates that designed ordered metal nanowires can be produced by the electroless deposition method, using H-Si(111) surfaces with well-regulated step lines as a substrate.     

Catalytic amplification of the soft lithographic patterning of Si. Nonelectrochemical orthogonal fabrication of photoluminescent porous Si pixel arrays

Photoluminescent, porous silicon pixel arrays were fabricated via a Pt-promoted wet etching of p-type Si(100) using a 1:1:1 EtOH/HF/H2O2 solution. The pixels were fabricated with micrometer-scale design rules on a silicon substrate that had been modified with an octadecyltrichlorosilane (OTS) monolayer patterned using microcontact printing. The printed OTS layer serves as an orthogonal resist template for the deposition of a Pt(0) complex, which preferentially deposits metal species in areas not covered with OTS. The Pt centers generate a localized oxidative dissolution process that pits the Si in the Pt-coated regions, resulting in the formation of a porous silicon microstructure that luminesces around 580 nm upon illumination with a UV source. Scanning electron microscopy and fluorescence microscopy images of the fabricated porous silicon structures showed that features in the size range of approximately 10-150 microm, and possibly smaller, can be generated by this catalytically amplified soft lithographic patterning method. Importantly, the OTS acts as an etch mask, so that, even with significant hole transport, etching is confined to areas coated with the Pt(0) complex.