Crystal plane dependent growth of aligned single-walled carbon nanotubes on sapphire

On single-crystal substrates, such as sapphire (alpha-Al 2O 3) and quartz (SiO 2), single-walled carbon nanotubes (SWNTs) align along specific crystallographic axes of the crystal, indicating that the SWNT growth is influenced by the crystal surface. Here, we show that not only the orientation, but also the diameter and chirality of SWNTs are affected by the crystal plane of the sapphire substrate. The aligned SWNTs grown on the A- and R-planes of sapphire have narrower diameter distributions than randomly oriented tubes produced on the C-plane sapphire and amorphous SiO 2. Photoluminescence measurements reveal a striking difference between the aligned SWNTs: near-zigzag tubes are observed on the A-plane and near-armchair tubes on the R-plane. This study shows the route for the diameter and chirality control of SWNTs by surface atomic arrangements of a single-crystal substrate.     

Preparation of horizontally aligned single-walled carbon nanotubes with floating catalyst

A strategy to prepare horizontally aligned single-walled carbon nanotubes(SWNTs) at moderate temperatures(≤600 ℃) were developed.Using ferocene as the catalyst precursor,Fe nanoparticles are formed in the gaseous phase and catalyze the nucleation and growth of SWNTs in situ.Then the resultant SWNTs are deposited onto the substrates downstream and aligned by the surface lattice of the ST-cut single crystal quartz.The preparation of SWNT arrays at moderate temperatures is important for combining the tube growth with device fabrication.     

Spatially selective guided growth of high-coverage arrays and random networks of single-walled carbon nanotubes and their integration into electronic devices

The chemical vapor deposition growth of unusual arrangements of single-walled carbon nanotubes (SWNTs) by the combined of use patterned catalysts and quartz substrates is reported. Nearly perfectly aligned, high-coverage arrays of SWNTs can be generated in this manner. High-coverage random networks of SWNTs can also be created in the same growth step, with good spatial alignment and electrical interfaces to the aligned arrays. Tubes with these geometries are ideally suited to applications in thin-film electronic devices. We demonstrate this possibility through the construction of thin-film-type transistors in which the random networks form the source and drain electrodes and the aligned arrays form the channel.     

Large-scale fabrication of aligned single-walled carbon nanotube array and hierarchical single-walled carbon nanotube assembly

Aligned single-walled carbon nanotubes (SWNTs) and hierarchical SWNT assembly were fabricated by electrospinning. The high fiber elongation and high DC electric field applied during the electrospinning process result in the orientation of the SWNTs along the axial direction of the fiber. The alignment of the electropsun composite fiber transfers this local SWNT orientation to macroscopically aligned SWNTs. After removing the polymer component from the aligned composite fiber, we produced large area aligned SWNTs. The results show that the directional control of SWNT alignment and debundling of SWNTs into individual tubes can be simultaneously realized.     

Template-free directional growth of single-walled carbon nanotubes on a- and r-plane sapphire

We report high-throughput growth of highly aligned single-walled carbon nanotube arrays on a-plane and r-plane sapphire substrates. This is achieved using chemical vapor deposition with ferritin as the catalyst. The nanotubes are aligned normal to the [0001] direction for growth on the a-plane sapphire. They are typically tens of micrometers long, with a narrow diameter distribution of 1.34 +/- 0.30 nm. In contrast, no orientation was achieved for growth on the c-plane and m-plane sapphire, or when Fe films, instead of ferritin, were used as the catalyst. Such orientation control is likely related to the interaction between carbon nanotubes and the sapphire substrate, which is supported by the observation that when a second layer of nanotubes was grown, they followed the gas flow direction. These aligned nanotube arrays may enable the construction of integrable and scalable nanotube devices and systems.     

Zeta potential orientation dependence of sapphire substrates

The zeta potential of planar sapphire substrates for three different crystallographic orientations was measured by a streaming potential technique in the presence of KCl and (CH3)4NCl electrolytes. The streaming potential was measured for large single crystalline C-plane (0001), A-plane (1120), and R-plane (1102) wafers over a full pH range at three or more ionic strengths ranging from 1 to 100 mM. The roughness of the epi-polished wafers was verified using atomic force microscopy to be on the order of atomic scale, and X-ray photoelectron spectroscopy (XPS) was used to ensure that the samples were free of silica and other contaminants. The results reveal a shift in the isoelectric point (iep) of the three samples by as much as two pH units, with the R-plane surface exhibiting the most acidic behavior and the C-plane samples having the highest iep. The iep at all ionic strengths was tightly centered around a single pH for each wafer. These values of iep are substantially different from the range of pH 8-10 consistently reported in the literature for alpha-Al2O3 particles. Particle zeta potential measurements were performed on a model powder using phase analysis light scattering, and the iep was confirmed to occur at pH 8. Modified Auger parameters (MAP) were calculated from XPS spectra of a monolayer of iridium metal deposited on the sapphire by electron beam deposition. A shift in MAP consistent with the observed differences in iep of the surfaces confirms the effect of surface structure on the transfer of charge between the Ir and sapphire, hence accounting for the changes in acidity as a function of crystallographic orientation.     

Aligned single‐wall carbon nanotube polymer composites using an electric field

While high shear alignment has been shown to improve the mechanical properties of single‐wall carbon nanotube (SWNT)‐polymer composites, this method does not allow for control over the electrical and dielectric properties of the composite and often results in degradation of these properties. Here, we report a novel method to actively align SWNTs in a polymer matrix, which permits control over the degree of alignment of the SWNTs without the side effects of shear alignment. In this process, SWNTs were aligned via AC field‐induced dipolar interactions among the nanotubes in a liquid matrix followed by immobilization by photopolymerization under continued application of the electric field. Alignment of SWNTs was controlled as a function of magnitude, frequency, and application time of the applied electric field. The degree of SWNT alignment was assessed using optical microscopy and polarized Raman spectroscopy, and the morphology of the aligned nanocomposites was investigated by high‐resolution scanning electron microscopy. The structure of the field induced aligned SWNTs was intrinsically different from that of shear aligned SWNTs. In the present work, SWNTs are not only aligned along the field, but also migrate laterally to form thick, aligned SWNT percolative columns between the electrodes. The actively aligned SWNTs amplify the electrical and dielectric properties of the composite. All of these properties of the aligned nanocomposites exhibited anisotropic characteristics, which were controllable by tuning the applied field parameters. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 1751–1762, 2006     

Molten gallium as a catalyst for the large-scale growth of highly aligned silica nanowires

The vapor-liquid-solid (VLS) process is a fundamental mechanism for the growth of nanowires, in which a small size (5-100 nm in diameter), high melting point metal (such as gold and iron) catalyst particle directs the nanowire's growth direction and defines the diameter of the crystalline nanowire. In this article, we show that the large size (5-50 microm in diameter), low melting point gallium droplets can be used as an effective catalyst for the large-scale growth of highly aligned, closely packed silica nanowire bunches. Unlike any previously observed results using gold or iron as catalyst, the gallium-catalyzed VLS growth exhibits many amazing growth phenomena. The silica nanowires tend to grow batch by batch. For each batch, numerous nanowires simultaneously nucleate, grow at nearly the same rate and direction, and simultaneously stop growing. The force between the batches periodically lifts the gallium catalyst upward, forming two different kinds of products on a silicon wafer and alumina substrate. On the silicon wafer, carrot-shaped tubes whose walls are composed of highly aligned silica nanowires with diameters of 15-30 nm and length of 10-40 microm were obtained. On the alumina substrate, cometlike structures composed of highly oriented silica nanowires with diameters of 50-100 nm and length of 10-50 microm were formed. A growth model was proposed. The experimental results expand the VLS mechanism to a broader range.     

Cobalt ultrathin film catalyzed ethanol chemical vapor deposition of single-walled carbon nanotubes

We report a simple and efficient chemical vapor deposition (CVD) process that can grow oriented and long single-walled carbon nanotubes (SWNTs) using a cobalt ultrathin film ( approximately 1 nm) as the catalyst and ethanol as carbon feedstock. In the process, millimeter- to centimeter-long, oriented and high-quality SWNTs can grow horizontally on various flat substrate surfaces, traverse slits as large as hundreds of micrometers wide, or grow over vertical barriers as high as 20 microm. Such observations demonstrate that the carbon nanotubes are suspended in the gas flow during the growth. The trace amount of self-contained water (0.2-5 wt %) in ethanol may act as a mild oxidizer to clean the nanotubes and to elongate the lifetime of the catalysts, but no yield improvement was observed at the CVD temperature of 850 degrees C. We found that tilting the substrates supporting the Co ultrathin film catalysts can grow more, longer carbon nanotubes. A mechanism is discussed for the growth of long SWNTs.     

Immobilizing shortened single-walled carbon nanotubes (SWNTs) on gold using a surface condensation method

We propose a surface condensation method for assembling single-walled carbon nanotubes (SWNTs) on gold. The as-prepared long and randomly tangled SWNTs were cut into short pipes by chemical oxidation, allowing the nanotubes to be terminated by carboxyl functionalities. A surface condensation reaction was then performed by immersing an amino self-assembled monolayer (SAM)-modified gold substrate into the dimethylformamide suspension of carboxylic nanotubes with the aid of dicyclohexylcarbodiimide condensation agent. Raman spectroscopy and atomic force microscopy (AFM) results show that a highly aligned assembly of SWNTs has been formed on gold, with the nanotubes standing on the surface stable enough for a long ultrasonication. In combination with the microcontact printing (muCP) technique, we have fabricated patterned nanotube assemblies using this surface condensation method. Moreover, we found that the "giant" carbon nanotubes tend to form bundles on an amino-terminating surface, likely following a nucleation-growth model.     

Directing the growth of highly aligned gold nanorods through a surface chemical amidation reaction

This paper describes the seed-mediated growth of highly aligned gold nanorods (Au NRs) over large areas directly on a Si(100) surface. The Si(100) surface is NH2-functionalized with (aminopropyl)triethoxysilane (APTES) followed by a DCC-catalyzed surface amidation reaction with acetic acid. After exposure to a gold nanoparticle (Au NP) "seed" solution, chemical seed-mediated growth of the surface-bound seeds via reduction of AuCl4- by ascorbic acid in the presence of cetyltrimethylammonium bromide leads to the growth of highly aligned Au NRs on the surface. About 80% of the NRs are aligned in the same direction within a +/-30 degrees range. Au NRs account for 19% of the nanostructures with average aspect ratio (AR) of approximately 20. The alignment direction did not correlate with the atomic arrangement of the Si(100) crystal since it varied over different regions of the sample, rotating by 90 degrees from top to bottom of an approximately 5 mm sample. Si crystallinity may still be important since alignment is not observed on amorphous glass. Surface functionalization is the key since alignment is only observed following the amidation reaction and not on NH2-functionalized, SH-functionalized, or bare Si(100) surfaces. Alignment also occurred for Au NRs grown on Si(100)/APTES reacted with succinic acid and on Ag NRs grown on Si(100)/APTES/acetic acid surfaces. This unique alignment of metal NRs promoted by a surface amidation chemical reaction may find use in nanoelectronics, chemical sensing, and plasmonics applications.     

Growth of high-density parallel arrays of long single-walled carbon nanotubes on quartz substrates

Herein we report a CVD approach to prepare high-density and perfectly aligned arrays of long SWNTs on stable temperature (ST)-cut quartz substrates using copper as catalyst and ethanol as carbon source. Compared with earlier reports, we have demonstrated that the aligned nanotube arrays can be grown on ST quartz substrate without the need of thermal annealing. The density can reach >50 nanotubes per micron and the length can be a few millimeters. Additionally, we have obtained direct proof on the "tip-growth" mechanism for the aligned nanotubes and important evidence that explained the termination of the growth.     

Electric-field-enhanced assembly of single-walled carbon nanotubes on a solid surface

We report a novel electric-field-enhanced chemical assembly approach for fabricating highly aligned SWNT arrays on a solid surface with remarkably improved efficiency and packing density, which is very important for the real applications of carbon nanotube arrays. With the enhancement of the electric field, the assembling kinetics of SWNTs is remarkably speeded up to effectively decrease the assembling time, and the packing density can even exceed the saturated density of conventional assembly method by four times within only half an hour. The molecular dynamics simulation results illustrated the alignment of SWNTs with their long axes along the electric flux in solution, leading to the increase of packing density and efficiency through overcoming the steric hindrance of the "giant" carbon nanotubes.     

Formation of wormlike aggregates of fluorocarbon-hydrocarbon hybrid surfactant by Langmuir-Blodgett transfer and alignment of gold nanoparticles

A novel anionic fluorocarbon-hydrocarbon hybrid surfactant (SS-Hyb-Na+) with a disulfide group has been synthesized from 11-bromo-1-undecanal and perfluorohexylethyl iodide via three steps. The Langmuir-Blodgett (LB) transfer of the 1:100 (mol/mol) mixed monolayer of SS-Hyb-Na+ and stearyl alcohol (C18OH) formed on an aqueous solution containing a cationic polymer, poly(diallyldimethylammonium chloride) (PDDA+Cl-) onto a hydrophobic silicon wafer yields the formation of wormlike aggregates consisting of SS-Hyb-/PDDA+ polyion complexes. It is found that the aggregates align along the withdrawal direction of the wafer substrate. When the wafer on which the wormlike aggregates exist is immersed into the dispersion of gold nanoparticles (Au NPs) prepared by the citrate reduction method, Au NPs align along the wormlike structures. Even though the surface of the wafer is placed either vertical or parallel to the monolayer compression direction during the LB transfer, the one-dimensional (1D) array of Au NPs is observed along the withdrawal direction of the wafer. This indicates that the wormlike aggregates of SS-Hyb-/PDDA+ complexes are aligned during the LB transfer, and the aligned aggregates behave as a scaffold in the 1D array of Au NPs.     

FeCo/MgO催化生长体相单壁碳纳米管的直径调控

单壁碳纳米管的直径可控生长是碳纳米管生长与应用领域的重要问题。直径在0.9–1.2 nm范围内的碳纳米管非常适合应用于近红外荧光生物成像领域和量子器件单光子光源之中。本文使用FeCo/MgO催化剂生长出了直径在这一范围内的体相单壁碳纳米管,并研究了催化剂制备和CVD生长条件对碳纳米管直径的影响。催化剂前驱体的制备是获得小尺寸催化剂颗粒的关键步骤。在浸渍过程中,使用难水解的金属硫酸盐作为前驱体、降低浸渍pH以及加入络合剂分子都会抑制溶液干燥过程中金属盐的水解,从而控制催化剂的尺寸,使其适合于生长出直径可控的单壁碳纳米管。在CVD生长过程中,使用乙醇作为碳源、使用较低的碳氢比例也有利于小直径碳纳米管的生长。     

Dendrimer-templated Fe nanoparticles for the growth of single-wall carbon nanotubes by plasma-enhanced CVD

A fourth-generation (G4) poly(amidoamine) (PAMAM) dendrimer (G4-NH2) has been used as a template to deliver nearly monodispersed catalyst nanoparticles to SiO2/Si, Ti/Si, sapphire, and porous anodic alumina (PAA) substrates. Fe2O3 nanoparticles obtained after calcination of the immobilized Fe3+/G4-NH2 composite served as catalytic "seeds" for the growth of single-wall carbon nanotubes (SWNTs) by microwave plasma-enhanced CVD (PECVD). To surmount the difficulty associated with SWNT growth via PECVD, reaction conditions that promote the stabilization of Fe nanoparticles, resulting in enhanced SWNT selectivity and quality, have been identified. In particular, in situ annealing of Fe catalyst in an N2 atmosphere was found to improve SWNT selectivity and quality. H2 prereduction at 900 degrees C for 5 min was also found to enhance SWNT selectivity and quality for SiO2/Si supported catalyst, albeit of lower quality for sapphire supported catalyst. The application of positive dc bias voltage (+200 V) during SWNT growth was shown to be very effective in removing amorphous carbon impurities while enhancing graphitization, SWNT selectivity, and vertical alignment. The results of this study should promote the use of exposed Fe nanoparticles supported on different substrates for the growth of high-quality SWNTs by PECVD.     

Surface structure of protonated R-sapphire (1102) studied by sum-frequency vibrational spectroscopy

Sum-frequency vibrational spectroscopy was used to study the protonated R-plane (1102) sapphire surface. The OH stretch vibrational spectra show that the surface is terminated with three hydroxyl moieties, two from AlOH(2) and one from Al(2)OH functional groups. The observed polarization dependence allows determination of the orientations of the three OH species. The results suggest that the protonated sapphire (1102) surface differs from an ideal stoichiometric termination in a manner consistent with previous X-ray surface diffraction (crystal truncation rod) studies. However, in order to best explain the observed hydrogen-bonding arrangement, surface oxygen spacing determined from the X-ray diffraction study requires modification.     

Direct evidence for root growth of vertically aligned single-walled carbon nanotubes by microwave plasma chemical vapor deposition

The root growth mode of extremely dense and vertically aligned single-walled carbon nanotubes (SWNTs) synthesized by microwave plasma chemical vapor deposition was clarified by a new method, marker growth, which does not require transmission electron microscopy. SWNT layers were grown intermittently on a substrate, and a line between the layers was used as a marker to identify the growth mode. Micro-Raman spectroscopy revealed that the SWNT layers have the same diameter distribution.     

Systematic study on experimental conditions for large-scale growth of aligned ZnO nanowires on nitrides

In vapor-liquid-solid (VLS) growth, it is generally believed that nanowires would grow as long as the right catalysts and substrate are supplied as well as the growth temperature is adequate. We show here, however, that oxygen partial pressure plays a key role in determining the quality of the aligned ZnO nanowires. We present a "phase diagram" between the oxygen partial pressure and the growth chamber pressure for synthesizing high quality aligned ZnO nanowires on GaN substrate. This result provides a road map for large-scale, controlled synthesis of ZnO nanowires on nitride semiconductor substrates with the potential to meet the needs of practical applications. The chemical process involved in the growth process is also systematically elaborated based on experimental data received under different conditions.     

Insights in the plasma-assisted growth of carbon nanotubes through atomic scale simulations: effect of electric field

Carbon nanotubes (CNTs) are nowadays routinely grown in a thermal CVD setup. State-of-the-art plasma-enhanced CVD (PECVD) growth, however, offers advantages over thermal CVD. A lower growth temperature and the growth of aligned freestanding single-walled CNTs (SWNTs) makes the technique very attractive. The atomic scale growth mechanisms of PECVD CNT growth, however, remain currently entirely unexplored. In this contribution, we employed molecular dynamics simulations to focus on the effect of applying an electric field on the SWNT growth process, as one of the effects coming into play in PECVD. Using sufficiently strong fields results in (a) alignment of the growing SWNTs, (b) a better ordering of the carbon network, and (c) a higher growth rate relative to thermal growth rate. We suggest that these effects are due to the small charge transfer occurring in the Ni/C system. These simulations constitute the first study of PECVD growth of SWNTs on the atomic level.