Nanoscale modification of Ni/Al interfaces by low-energy $\mathrm{O}_{2}^{+}$ reactive ion beam mixing

The kinetics of growth, composition and electronic structure of thin oxide films formed by reactive ion beam mixing (IBM) of Ni/Al interfaces bombarded with low-energy (3-keV) O₂⁺\mathrm{O}_{2}^{+} ions have been studied at room temperature using X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy and factor analysis. Initially, NiO species are formed but, later, with increasing ion dose, Ni–Al mixed oxide species appear due to Al incorporation in the near-surface region. These changes are accompanied by a slight increase of the oxygen concentration and a decrease of the Ni/Al ratio in the thin oxide films formed. Angle-resolved X-ray photoelectron spectroscopy shows that Ni–Al mixed oxide species are located nearer the surface than NiO species. Experimental results have been compared with Monte Carlo TRIDYN simulations, suggesting that processes driven by residual defects or the reaction with oxygen predominate over pure ballistic mechanisms during reactive IBM of Ni/Al interfaces.     

Cathodoluminescence degradation of PLD thin films

The cathodoluminescence (CL) intensities of Y₂SiO₅:Ce³⁺, Gd₂O₂S:Tb³⁺ and SrAl₂O₄:Eu²⁺,Dy³⁺ phosphor thin films that were grown by pulsed laser deposition (PLD) were investigated for possible application in low voltage field emission displays (FEDs) and other infrastructure applications. Several process parameters (background gas, laser fluence, base pressure, substrate temperature, etc.) were changed during the deposition of the thin films. Atomic force microscopy (AFM) was used to determine the surface roughness and particle size of the different films. The layers consist of agglomerated nanoparticle structures. Samples with good light emission were selected for the electron degradation studies. Auger electron spectroscopy (AES) and CL spectroscopy were used to monitor changes in the surface chemical composition and luminous efficiency of the thin films. AES and CL spectroscopy were done with 2 keV energy electrons. Measurements were done at 1×10⁻⁶ Torr oxygen pressure. The formation of different oxide layers during electron bombardment was confirmed with X-ray photoelectron spectroscopy (XPS). New non-luminescent layers that formed during electron bombardment were responsible for the degradation in light intensity. The adventitious C was removed from the surface in all three cases as volatile gas species, which is consistent with the electron stimulated surface chemical reaction (ESSCR) model. For Y₂SiO₅:Ce³⁺ a luminescent SiO₂ layer formed during the electron bombardment. Gd₂O₃ and SrO thin films formed on the surfaces of Gd₂O₂S:Tb³⁺ and SrAl₂O₄:Eu²⁺,Dy³⁺, respectively, due to ESSCRs.     

Auger electron/X-ray photoelectron and cathodoluminescent spectroscopic studies of pulsed laser ablated SrAl2O4:Eu,Dy thin films

Auger electron/X-ray photoelectron and cathodoluminescent (CL) spectroscopic studies were conducted on pulsed laser deposited SrAl₂O₄:Eu²⁺,Dy³⁺ thin films and the correlation between the surface chemical reactions and the decrease in the CL intensity was determined. The Auger electron and the CL data were collected simultaneously in a vacuum chamber either maintained at base pressure or backfilled with oxygen gas. The data were collected when the films were irradiated for 14 h with 2 keV electrons. The CL emission peak attributed to the 4f⁶5d¹ → 4f⁷ transitions was observed at ∼521 nm and the CL intensity of the peaks degraded at different rates in different vacuum conditions. X-ray photoelectron spectroscopy (XPS) data collected from degraded films suggest that strontium oxide (SrO) and aliminium oxide (Al₂O₃) were formed on the surface of the film as a result of electron stimulated surface chemical reaction (ESSCR).     

Preparation and optical properties of ZnGa2O4:Cr thin films derived by sol-gel process

ZnGa₂O₄:Cr³⁺ thin films with bright red emission were synthesized using a sol-gel process, characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Auger electron spectroscopy (AES) and UV-vis and fluorescence spectrophotometry measurements. Effects of calcining temperature, film thickness, calcining duration and substrates on the crystal structure and photoluminescent property have been investigated. It is found that the crystallinity, Ga/Zn ratio and band gap energy (E_g) are significant factors influencing optical characteristics, while the nature of substrates affect the surface morphologies of ZnGa₂O₄:Cr³⁺ thin films.     

Absorption and EPR spectra of Cr3+ ions in a LaBeAl11O19 crystal

Electron spectra of optical absorption and EPR of Cr³⁺ ions in a LaBeAl₁₁O₁₉ crystal are investigated. It is shown that the Cr³⁺ ions occupy, three different octahedral positions of Al³⁺ in the LaBeAl₁₁O₁₉ structure, namely, 12k, 2a, and 4f₂; the ratio of their intensitites is 1∶2∶30, respectively. Parameters of the Cr³⁺ centers are determined and its is shown that the optical absorption spectra in the visible region are practically determined by the Cr³⁺ (III) occupying the 4f₂-positions. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 2, pp. 275–277, March–April, 1999.     

Preparation and characterization of nitrogen-incorporated SnO2 films

Nitrogen-incorporated SnO₂ thin films have been grown on Si(100) and quartz substrates by reactive sputtering of a Sn target in gas mixtures of N₂–O₂. The structure of the nitrogen-incorporated SnO₂ thin films was studied by X-ray diffraction, and the changes in the chemical bonds and atomic binding states of the nitrogen-incorporated SnO₂ thin films were analyzed by X-ray photoelectron spectroscopy. It was found that the binding energy of Sn 3d and O 1s shifts 0.65 eV and 0.35 eV, respectively, toward the lower-energy side after nitrogen was incorporated into the SnO₂ thin films as a comparison with that of pure SnO₂ film. The indirect optical band gap gradually decreases from 3.42 eV to 3.23 eV, i.e. from the UV to the edge of the visible-light range, with increasing nitrogen flux content in the N₂–O₂ gas mixtures. PACS 81.15.Cd; 78.20.-e; 68.37.Xy; 81.05.Je     

Concentration of Cr<Superscript>4+</Superscript> impurity ions and color centers as an indicator of saturation of forsterite crystals Mg<Subscript>2</Subscript>SiO<Subscript>4</Subscript> with oxygen

The influence of the oxygen partial pressure P _{O 2} in the growth atmosphere on the coefficient of chromium distribution between the crystal and the melt of forsterite, the Cr³⁺ and Cr⁴⁺ ion contents in crystals, and the concentration of color centers induced by irradiation has been investigated. It has been established that the crystals grown at low oxygen partial pressures P _{O 2} (0.01–0.05 kPa) are characterized by low concentrations of Cr⁴⁺ ions and color centers. A change in the oxygen partial pressure to P _{O 2} ∼ 0.85 kPa leads to an increase in the Cr⁴⁺ center concentration by a factor of ∼10 and in the color center concentration by a factor of ∼5. A further increase in the oxygen partial pressure to P _{O 2} to 12 kPa remains the concentration of these centers almost unchanged. A model has been proposed according to which the intrinsic defects formed under conditions of a relative excess of oxygen leads to both the self-oxidation of chromium and the formation of color centers in the forsterite crystals under irradiation.     

Characterization of Cr/SiO2 catalysts and ethylene polymerization by XPS

Cr/SiO₂ catalysts with 1 or 3 wt.% Cr loadings and different chromium precursors were characterized by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). A method to determine chromium species in the sample was developed through the decomposition of the Cr 2p XPS spectrum in Cr⁶⁺ and Cr³⁺ standard spectra. The results of the binding energy from the Cr 2p region and of the distribution of chromium species allowed to evaluate the dynamic photo-reduction of the surface chromium species during XPS analysis. Photo-reduction of surface Cr⁶⁺ to Cr³⁺ species was verified for all samples supported in silica, depending on the precursor and chromium content. Bulk CrO₃ and Cr₂O₃ standards did not reveal variation in the binding energy of Cr 2p_3/2, but a physical mixture of CrO₃ with SiO₂ presented photo-reduction. The behavior of this mixture resembled to the catalysts and suggests the participation of the surface hydroxyls of silica in the photo-reduction process. XPS intensity measurements for assessing dispersion of chromium oxide were used to compare the calcined and reduced catalysts to different chromium precursors. Polyethylene chains were detected by in situ XPS, while oligomerization products were not observed.     

Production and characterization of Nd,Cr:GSGG thin films on Si(001) grown by pulsed laser ablation

Nd,Cr:Gd₃Sc₂Ga₃O₁₂ (GSGG) thin films have been produced for the first time. They were grown on Si(001) substrates at 650 °C by pulsed laser ablation at 248 nm of a crystalline Nd,Cr:GSGG target rod. The laser plume was analyzed using time-of-flight quadrupole mass spectroscopy, and consisted of elemental and metal oxide fragments with kinetic energies typically in the range 10 to 40 eV, though extending up to 100 eV. Although films deposited in vacuum using laser fluences of 0.8±0.1 J cm⁻² reproduced the Nd,Cr:GSGG bulk stoichiometry, those deposited using fluences above ≈3 J cm⁻² resulted in noncongruent material transfer and were deficient in Ga and Cr. Attempts to grow films using synchronized oxygen or oxygen/argon pulses yielded mixed oxide phases. Under optimal growth conditions, the films were heteroepitaxial, with GSGG(001)[100]∥Si(001)[100], and exhibited Volmer–Weber-type growth. Room-temperature emission spectra of the films suggest efficient non-radiative energy transfer between Cr³⁺ and Nd³⁺ ions, similar to that of the bulk crystal. Received: 1 October 1999 / Accepted: 15 October 1999 / Published online: 23 February 2000     

Chemical and phase compositions of silicon oxide films with nanocrystals prepared by carbon ion implantation

The chemical and phase compositions of silicon oxide films with self-assembled nanoclusters prepared by ion implantation of carbon into SiO _x (x < 2) suboxide films with subsequent annealing in a nitrogen atmosphere have been investigated using X-ray photoelectron spectroscopy in combination with depth profiling by ion sputtering. It has been found that the relative concentration of oxygen in the maximum of the distribution of implanted carbon atoms is decreased, whereas the relative concentration of silicon remains almost identical over the depth in the layer containing the implanted carbon. The in-depth distributions of carbon and silicon in different chemical states have been determined. In the regions adjacent to the layer with a maximum carbon content, the annealing results in the formation of silicon oxide layers, which are close in composition to SiO₂ and contain silicon nanocrystals, whereas the implanted layer, in addition to the SiO₂ phase, contains silicon oxide species Si²⁺ and Si³⁺ with stoichiometric formulas SiO and Si₂O₃, respectively. The film contains carbon in the form of SiC and elemental carbon phases. The lower limit of the average size of silicon nanoclusters has been estimated as ∼2 nm. The photoluminescence spectra of the films have been interpreted using the obtained results.     

The effects of ceramic fillers on the PMMA-based polymer electrolyte systems

The effects of ceramics fillers on the polymethylmethacrylate (PMMA)-based solid polymer electrolytes have been studied using ac impedance spectroscopy and infrared spectroscopy. The polymer film samples were prepared using solution cast technique, tetrahydrofuran (THF) used as a solvent, and ethylene carbonate (EC) has been used as plasticizer. Lithium triflate salt (LiCF₃SO₃) has been incorporated into the polymer electrolyte systems. Two types of ceramic fillers, i.e., SiO₂ and Al₂O₃, were then implemented into the polymer electrolyte systems. The solutions were stirred for several hours before it is poured into petri dishes for drying under ambient air. After the film has formed, it was transferred into desiccator for further drying before the test. From the observation done by impedance spectroscopy, the room temperature conductivity for the highest conducting film from the (PMMA–EC–LiCF₃SO₃) system is 1.36 × 10⁻⁵ S cm⁻¹. On addition of the SiO₂ filler and Al₂O₃ filler, the conductivity are expected to increase in the order of ∼10⁻⁴ S cm⁻¹. Infrared spectroscopy indicates complexation between the polymer and the plasticizer, the polymer and the salts, the plasticizer and the salts, and the polymer and the fillers. The interactions have been observed in the C=O band, C–O–C band, and the O–CH₃ band. Paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamilnadu, India, Dec. 7-9, 2006.     

Structure of zinc-borate low-melting glasses derived from IR spectroscopy data

The IR spectra of glasses of the ZnO—SrO—B₂O₃ system with constant additions of PbO, Al₂O₃, and Li₂O (20 mol. % in sum) were studied. It is established that on replacement of B₂O₃ by ZnO, the structure of the glasses is characterized by the presence of groupings with the bridge bonds B^III— O—B^III, B^III—O—B^IV, B^IV—O—B^IV and end groups B^III— O⁻; ZnO practically exerts no influence on the coordination transition [BO₃] → [BO₄]. At a high content of ZnO, zinc ions are present in both a six-and a four-coordinated state. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 6, pp. 778–781, November–December, 2005.     

Adsorption of titanium,chromium, and copper atoms on thin aluminum and magnesium oxide film surfaces

Methods of Auger electron spectroscopy (AES), spectroscopy of characteristic electron energy losses (SCEEL), slow electron diffraction (SED), and contact potential difference (CPD) in ultrahigh vacuum are used to investigate the adsorption-emission properties and stability of two-component film systems formed by putting of Ti, Cr, and Cu atoms on MgO–Mo(011) and Al₂O₃–Mo(011) surfaces. All atoms have the properties of electronegative adsorbates. Continuous adatom monolayers are formed on the Al₂O₃–Mo(011) system surface, and three-dimensional islands are formed on the MgO–Mo(011) surface. The properties of monoatomic films on the oxide layer surface are close to those observed for bulk materials. No radical changes of the system properties are detected with increasing dielectric layer thickness. The thermal stability of the newly formed structures decreases in the order Ti, Cr, Cu, Al₂O₃(MgO), and Mo(011).     

X-ray photoemission study of MgB<Subscript>2</Subscript> films synthesized from in-situ annealed MgB<Subscript>2</Subscript>/Mg multilayers

Superconducting MgB₂ films were obtained by in-situ annealing of precursor multilayers deposited at low substrate temperature by sputtering from a MgB₂ stoichiometric target and by thermal evaporation of pure Mg. After an in-situ annealing at 500–600 °C, the films showed a zero resistance critical temperature up to 31 K. The as-obtained MgB₂ films were investigated by X-ray photoelectron spectroscopy (XPS) and X-ray auger electron spectroscopy (XAES). The electronic structure was studied by monitoring the B 1s, Mg 2p, O 1s core-levels and the Mg KL₂L₃ Auger line. For comparison, the electronic structure of an MgB₂ commercial superconducting sputtering target, of a not-annealed precursor film and of a sample obtained by direct sputtering from the MgB₂ target have also been investigated. Electron spectroscopy showed that in the superconducting systems the Mg KL₂L₃ Auger line kinetic energy position is always higher by about 0.9 eV with respect to the energy position of the same Auger line measured in the non-superconducting samples. PACS 74.25Jb; 74.78.Bz; 74.70.Ad     

The effect of different gas atmospheres on luminescent properties of pulsed laser ablated SrAl2O4:Eu,Dy thinfilms

SrAl₂O₄:Eu²⁺,Dy³⁺ thin films were grown on Si (1 0 0) substrates using the pulsed laser deposition (PLD) technique to investigate the effect of vacuum, oxygen (O₂) and argon (Ar) deposition atmospheres on the structural, morphological, photoluminescence (PL) and cathodoluminescence (CL) properties of the films. The films were ablated using a 248 nm KrF excimer laser. Atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS) and fluorescence spectrophotometry were used to characterize the thin films. Auger electron spectroscopy (AES) combined with CL spectroscopy were employed for the surface characterization and electron-beam induced degradation of the films. Better PL intensities were obtained from the unannealed films prepared in Ar and O₂ atmospheres with respect to those prepared in vacuum. A stable green emission peak at 515 nm, attributed to 4f⁶5d¹→4f⁷ Eu²⁺ transitions were obtained with less intense peaks at 619 nm, which were attributed to transitions in Eu³⁺. After annealing the films prepared in vacuum at 800 °C for 2 h, the intensity of the green emission (520 nm) of the thin film increased considerably. The amorphous thin film was crystalline after the annealing process. The CL intensity increased under prolonged electron bombardment during the removal of C due to electron stimulated surface chemical reactions (ESSCRs) on the surface of the SrAl₂O₄:Eu²⁺, Dy³⁺ thin films. The CL stabilized and stayed constant thereafter.     

Influence of 50 MeV Lithium Ion Irradiation on Hyperfine Interactions of Cr0.5 Li0.5 Fe2O4

Spinel oxide Cr_0.5 Li_0.5 Fe₂O₄ has been irradiated at Nuclear Science Centre, New Delhi, by 50 MeV lithium ions of fluence 5*10¹³ ions/cm² and irradiation effect on hyperfine interactions has been investigated by Mossbauer spectroscopy. The Mossbauer spectrum of irradiated sample shows no paramagnetic doublet contribution and the hyperfine fields corresponding to the Fe³⁺ in the octahedral (B) and the tetrahedral (A) sites are very well separated. That is the observed superimposed A and B sites in unirradiated sample are split into separate lines after Li irradiation. Further an increase of the intensity of the lines (2)–(5) with respect to (1)–(6) signals an orientation of the hyperfine magnetic field towards a direction perpendicular to the ion path due to the irradiation induced strain by the latent tracks. The computer simulation of Mossbauer spectra indicated that the irradiated Fe³⁺-site occupancy of the A-site hyperfine field increased from 43% to 55% whereas the B-site hyperfine field decreased from 57% to 45% compared to unirradiated sample.     

Structural and ferroelectric properties of Bi4Ti3O12 thin films on IrO2 prepared by rf magnetron sputtering

Bismuth titanate, Bi₄Ti₃O₁₂, thin films were grown on IrO₂/SiO₂/Si substrates by radio-frequency magnetron sputtering. Crystallinity and microstructure of the films were characterized over a wide range of oxygen mixing ratio (OMR) during deposition. X-ray fluorescence spectra reveal that the cation content of the films is dependent upon the OMR, suggesting that control of Bi to Ti ratio is possible by the oxygen content in the sputtering atmosphere. Rutherford backscattering spectrometry measurements also show that oxygen content of the BTO film grown with an OMR = 0.5is close to a stoichiometric phase. In addition, Bi–O bonding chemistry is studied by X-ray photoelectron spectroscopy. Polarization vs. voltage loop shows that remnant polarization, P_r, is +12 μC/cm². Received: 26 November 1999 / Accepted: 26 November 1999 / Published online: 9 August 2000     

Isotopic labeling study of oxygen diffusion in amorphous LaScO3 high-κ films on Si(100) and its effects on the electrical characteristics

The influence of post-deposition oxygen anneals on the properties of amorphous LaScO₃ films on Si(100) is reported. The use of an isotopically (¹⁸O₂) enriched atmosphere allowed to investigate the ¹⁶O–¹⁸O exchange and the oxygen diffusion across the dielectric layer. Such effects are connected to the formation of an interfacial layer. Oxygen annealing leads to nearly ideal capacitance–voltage curves, lower leakage currents and interface trap densities, as well as to κ-values up to 33 for the LaScO₃ films. These results are attributed to the suppression of oxygen-related trap centers and the achievement of a stoichiometric oxygen content.     

Structural studies of Cr-doped mullite derived from single-phase precursors

Cr-doped mullites were prepared from single-phase precursors containing up to 9.60 wt% Cr₂O₃ using a sol-gel technique followed by thermal treatment. Particle induced X-ray emission spectroscopy and X-ray powder diffraction were used to characterize the samples. Mullites were orthorhombic, space group Pbam. Cr doping caused the increase of unit-cell parameters. Strongest expansion was noticed along c-axis followed by a and b (Δc/c=0.089, Δa/a=0.061, Δb/b=0.045% per mole Cr₂O₃). A second phase, namely θ-(Al,Cr)₂O₃, was revealed by XRD in the sample containing 9.60 wt% Cr₂O₃. The structure of mullites was refined by the Rietveld method, location of Cr³⁺ was performed by the EPR spectroscopy. At low chromium doping level (Cr₂O₃ content less than ∼5 wt%) Cr³⁺ ions were substituted for Al³⁺ in the AlO₆ octahedra of the mullite structure (M1 site). For higher doping level, Cr³⁺ ions were additionally substituted for Al³⁺ in the AlO₆ octahedra of the second phase [θ-(Al,Cr)₂O₃ at 1400 °C, or α-(Al,Cr)₂O₃ at 1600 °C] which segregated in the system. Substitution of Cr³⁺ for Al³⁺ on M1 site in the mullite structure resulted in increase of average distances in (M1)O₆ octahedron and decrease of average distances in T*O₄ tetrahedron, while average distances in TO₄ tetrahedron stayed almost constant.     

Embedded structure of silicon monoxide in SiO2 films

The structure of SiO_x (x = 1.94) films has been investigated using both X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS). The SiO_x films were deposited by vacuum evaporation. XPS spectra show that SiO_1.94 films are composed of silicon suboxides and the SiO₂ matrix. Silicon clusters appeared only negligibly in the films in the XPS spectra. Si₃O⁺ ion species were found in the TOF-SIMS spectra with strong intensity. These results reveal the structure of the films to be silicon monoxide embedded in SiO₂, and this structure most likely exists as a predominant form of Si₃O₄. The existence of Si-Si structures in the SiO₂ matrix will give rise to dense parts in loose glass networks.