2,6-Diarylnaphtho[1,8-bc:5,4-b'c']dithiophenes as new high-performance semiconductors for organic field-effect transistors

A series of 2,6-diaryl-substituted naphtho[1,8-bc:5,4-b'c']dithiophene derivatives 2-6, whose aryl groups include 5-hexyl-2-thienyl, 2,2'-bithiophen-5-yl, phenyl, 2-naphthyl, and 4-biphenylyl, was synthesized by the palladium-catalyzed Suzuki-Miyaura coupling and utilized as active layers of organic field-effect transistors (OFETs). All devices fabricated using vapor-deposited thin films of these compounds showed typical p-type FET characteristics. The mobilities are relatively good and widely range from 10(-4) to 10(-1) cm2 V(-1) s(-1), depending on the substituent groups. Among them, the mobilities of the devices using films of 3-5 tend to increase with the increasing temperature of the Si/SiO2 substrate during film deposition. In particular, the device based on the naphthyl derivative 5, when fabricated at 140 degrees C, marked a high mobility of 0.11 cm2 V(-1) s(-1) with an on/off ratio of 10(5), which is a top class of performance among organic thin-film transistors. Studies of X-ray diffractograms (XRDs) have revealed that the film of 4 and 5 is composed of two kinds of crystal grains with different phases, so-called "single-crystal phase" and "thin film phase", and that the proportion of the thin film phase increases with an increase of the substrate temperature. In the thin film phase the assembled molecules stand nearly upright on the substrate in such a way as to be favorable to carrier migration.     

Low-temperature, high-performance, solution-processed indium oxide thin-film transistors

Solution-processed In(2)O(3) thin-film transistors (TFTs) were fabricated by a spin-coating process using a metal halide precursor, InCl(3), dissolved in acetonitrile. A thin and uniform film can be controlled and formed by adding ethylene glycol. The synthesized In(2)O(3) thin films were annealed at various temperatures ranging from 200 to 600 °C in air or in an O(2)/O(3) atmospheric environment. The TFTs annealed at 500 °C under air exhibited a high field-effect mobility of 55.26 cm(2) V(-1) s(-1) and an I(on)/I(off) current ratio of 10(7). In(2)O(3) TFTs annealed under an O(2)/O(3) atmosphere at temperatures from 200 to 300 °C exhibited excellent n-type transistor behaviors with field-effect mobilities of 0.85-22.14 cm(2) V(-1) s(-1) and I(on)/I(off) ratios of 10(5)-10(6). The annealing atmosphere of O(2)/O(3) elevates solution-processed In(2)O(3) TFTs to higher performance at lower processing temperature.     

Charge transport in self-organized pi-stacks of p-phenylene vinylene oligomers

We have studied the mobility of charge carriers along self-organizing pi-stacks of hydrogen-bonded phenylene vinylene oligomers in solution, by time-resolved microwave conductivity measurements. The value deduced for the mobility along the stacks is 3 x 10(-3) and 9 x 10(-3) cm2/(V s) for holes and electrons, respectively. Additionally, we have calculated the mobility along the pi-stacks using a hopping model based on parameters from density functional theory. The mobility values obtained from these calculations are in good agreement with the experimental values if it is assumed that there are relatively large twist angles between neighboring molecules in the stack. It is shown that a significantly higher mobility can be attained if the twist angle between neighboring oligomers is reduced.     

Tuning orbital energetics in arylene diimide semiconductors. materials design for ambient stability of n-type charge transport

Structural and electronic criteria for ambient stability in n-type organic materials for organic field-effect transistors (OFETs) are investigated by systematically varying LUMO energetics and molecular substituents of arylene diimide-based materials. Six OFETs on n+-Si/SiO2 substrates exhibit OFET response parameters as follows: N,N'-bis(n-octyl)perylene-3,4:9,10-bis(dicarboximide) (PDI-8): mu = 0.32 cm2 V(-1) s(-1), Vth = 55 V, I(on)/I(off) = 10(5); N,N'-bis(n-octyl)-1,7- and N,N'-bis(n-octyl)-1,6-dibromoperylene-3,4:9,10-bis(dicarboximide) (PDI-8Br2): mu = 3 x 10(-5) cm2 V(-1) s(-1), Vth = 62 V, I(on)/I(off) = 10(3); N,N'-bis(n-octyl)-1,6,7,12-tetrachloroperylene-3,4:9,10-bis(dicarboximide) (PDI-8Cl4): mu = 4 x 10(-3) cm2 V(-1) (s-1), Vth = 37 V, I(on)/I(off) = 10(4); N,N'-bis(n-octyl)-2-cyanonaphthalene-1,4,5,8-bis(dicarboximide) (NDI-8CN): mu = 4.7 x 10(-3) cm2 V(-1) s(-1), Vth = 28, I(on)/I(off) = 10(5); N,N'-bis(n-octyl)-1,7- and N,N'-bis(n-octyl)-1,6-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN2): mu = 0.13 cm2 V(-1) s(-1), Vth = -14 V, I(on)/I(off) = 10(3); and N,N'-bis(n-octyl)-2,6-dicyanonaphthalene-1,4,5,8-bis(dicarboximide) (NDI-8CN2): mu = 0.15 cm2 V(-1) s(-1), Vth = -37 V, I(on)/I(off) = 10(2). Analysis of the molecular geometries and energetics in these materials reveals a correlation between electron mobility and substituent-induced arylene core distortion, while Vth and I(off) are generally affected by LUMO energetics. Our findings also indicate that resistance to ambient charge carrier trapping observed in films of N-(n-octyl)arylene diimides occurs at a molecular reduction potential more positive than approximately -0.1 V (vs SCE). OFET threshold voltage shifts between vacuum and ambient atmosphere operation suggest that, at E(red1) < -0.1 V, the interfacial trap density increases by greater than approximately 1 x 10(13) cm(-2), while, for semiconductors with E(red1) > -0.1 V, the trap density increase is negligible. OFETs fabricated with the present n-type materials having E(red1) > -0.1 V operate at conventional gate biases with minimal hysteresis in air. This reduction potential corresponds to an overpotential for the reaction of the charge carriers with O2 of approximately 0.6 V. N,N'-1H,1H-Perfluorobutyl derivatives of the perylene-based semiconductors were also synthesized and used to fabricate OFETs, resulting in air-stable devices for all fluorocarbon-substituted materials, despite generally having E(red1) < -0.1 V. This behavior is consistent with a fluorocarbon-based O2 barrier mechanism. OFET cycling measurements in air for dicyanated vs fluorinated materials demonstrate that energetic stabilization of the charge carriers results in greater device longevity in comparison to the OFET degradation observed in air-stable semiconductors with fluorocarbon barriers.     

Diketopyrrolopyrrole-containing quinoidal small molecules for high-performance, air-stable, and solution-processable n-channel organic field-effect transistors

We report the synthesis, characterization, and application of a novel series of diketopyrrolopyrrole (DPP)-containing quinoidal small molecules as highly efficient n-type organic semiconductors in thin film transistors (TFTs). The first two representatives of these species exhibit maximum electron mobility up to 0.55 cm(2) V(-1) s(-1) with current on/current off (I(on)/I(off)) values of 10(6) for 1 by vapor evaporation, and 0.35 cm(2) V(-1) s(-1) with I(on)/I(off) values of 10(5)-10(6) for 2 by solution process in air, which is the first demonstration of DPP-based small molecules offering only electron transport characteristics in TFT devices. The results indicate that incorporation of a DPP moiety to construct quinoidal architecture is an effective approach to enhance the charge-transport capability.     

Synthesis, structure, and catalytic reactivity of isolated V5+-Oxo species prepared by sublimation of VOCl3 onto H-ZSM5

Isolated and uniform V(5+)-oxo species were grafted onto H-ZSM5 at V/Al(f) ratios of 0.2-1 via sublimation of VOCl(3) precursors. These methods avoid the restricted diffusion of solvated oligomers in aqueous exchange, which leads to poorly dispersed V(2)O(5) at external zeolite surfaces. Sublimation methods led to stable and active V-ZSM5 catalysts for oxidative dehydrogenation (ODH) reactions; they led to an order of magnitude increase in primary C(2)H(6) ODH rates compared with impregnated ZSM5 catalysts at similar V/Al(f) ratios and showed similar activity to impregnated VO(x)/Al(2)O(3). The structure of grafted V(5+)-oxo species was probed using spectroscopic and titration methods. Infrared spectra in the OH region and isotopic exchange of D(2) with residual OH groups showed that exposure to VOCl(3(g)) at 473 K led to stoichiometric replacement of H(+) by each (VOCl(2))(+) species. Raman spectra supported by Density Functional Theory electronic structure and frequency calculations showed that, at V/Al(f) < 0.5, hydrolysis and subsequent dehydration led to the predominant formation of (VO(2))(+) species coordinated to one Al site with single-site catalytic behavior (0.7-0.9 x 10(-3) mol C(2)H(4) V(-1) s(-1), 673 K). At higher V/Al(f) ratios, simulation of extended X-ray absorption fine structure spectra indicated that V(2)O(4)(2+) dimers coexisted with VO(2)(+) monomers and led to an enhancement in ODH rates as a result of bridging V-O-V (1.3 x 10(-3) mol C(2)H(4) V(-1) s(-1)). These V(5+)-oxo species form via initial reactions between VOCl(3(g)) and OH groups to form HCl((g)), hydrolysis of grafted (VOCl(2))(+) to form HCl((g)) and (VO(OH)(2))(+), and intramolecular and intermolecular condensation to form monomers and dimers, respective with the concurrent evolution of H(2)O. Raman and X-ray spectroscopies did not detect crystalline V(2)O(5) at V/Al(f) ratios of 0.2-1, but V(2)O(5) crystals were apparent in samples prepared by impregnation or physical mixtures of V(2)O(5)/H-ZSM5. Framework Al atoms and zeolite crystal structures are maintained during VOCl(3) treatment and subsequent hydrolysis; (27)Al and (29)Si MAS NMR showed that these synthetic protocols removes <10% of the framework Al atoms (Al(f)).     

Lamination method for the study of interfaces in polymeric thin film transistors

A method for the fabrication of polymeric thin-film transistors (TFTs) by lamination is described. Poly(dimethylsiloxane) stamps were used to delaminate thin films of semiconducting polymers from silicon wafers coated with a self-assembled monolayer (SAM) formed from octyltrichlorosilane. These supported films were laminated onto electrode structures to form coplanar TFTs. The fabrication process was used to make TFTs with poly(3-hexylthiophene), P3HT, and poly[5,5'-bis(3-dodecyl-2-thienyl)-2,2'-bithiophene], PQT-12. TFTs, where these polymers were laminated onto gate dielectrics coated with SAMs from octyltrichlorosilane, had effective field-effect mobilities of 0.03 and 0.005 cm2/(V s), respectively. TFTs where PQT-12 was laminated onto gate dielectrics that were not coated with a SAM also had mobility of 0.03 cm2/(V s). In contrast, TFTs fabricated by spin-coating PQT-12 onto the same structure had mobilities ranging from 10-3 to 10-4 cm2/(V s). These results suggest that the lower mobilities of polymer TFTs made with hydrophilic gate dielectrics are caused by molecular ordering in the semiconducting film rather than electronic effects of dipolar groups at the interface.     

Tailoring the surface properties of poly(dimethylsiloxane) microfluidic devices

Poly(dimethylsiloxane) (PDMS) is an attractive material for microelectrophoretic applications because of its ease of fabrication, low cost, and optical transparency. However, its use remains limited compared to that of glass. A major reason is the difficulty of tailoring the surface properties of PDMS. We demonstrate UV grafting of co-mixed monomers to customize the surface properties of PDMS microfluidic channels in a simple one-step process. By co-mixing a neutral monomer with a charged monomer in different ratios, properties between those of the neutral monomer and those of the charged monomer could be selected. Mixtures of four different neutral monomers and two different charged monomers were grafted onto PDMS surfaces. Functional microchannels were fabricated from PDMS halves grafted with each of the different mixtures. By varying the concentration of the charged monomer, microchannels with electrophoretic mobilities between +4 x 10(-4) cm2/(V s) and -2 x 10(-4) cm2/(V s) were attainable. In addition, both the contact angle of the coated surfaces and the electrophoretic mobility of the coated microchannels were stable over time and upon exposure to air. By carefully selecting mixtures ofmonomers with the appropriate properties, it may be possible to tailor the surface of PDMS for a large number of different applications.     

High electron mobility in ladder polymer field-effect transistors

Field-effect mobility of electrons as high as 0.1 cm2/(V s) is observed in n-channel thin film transistors fabricated from a solution spin-coated conjugated ladder polymer, poly(benzobisimidazobenzophenanthroline) (BBL), under ambient air conditions. This is the highest electron mobility observed to date in a conjugated polymer semiconductor. Comparative studies of n-channel thin film transistors made from a structurally similar nonladder conjugated polymer BBB gave an electron mobility of 10-6 cm2/(V s). These results demonstrate that electron transport can be as facile as hole transport in conjugated polymer semiconductors and that ladder architecture of a conjugated polymer can substantially enhance charge carrier mobility.     

Synthesis, crystal structures, and electronic properties of nonlinear fused thienoacene semiconductors

Two fused thienoacene compounds with two-dimensional ring connectivity were synthesized, and their semiconducting properties were characterized. Both compounds have a crystal structure comprised of herringbone arrays of tight π-π stacks. Strong π-π interactions lead to self-assembly into well-defined crystalline thin films from the vapor phase for both compounds. Field effect transistors were fabricated, affording identical hole mobilities of 3.0 × 10(-3) cm(2)/(V s) and I(on/off) > 10(5).     

Air-stable, solution-processable n-channel and ambipolar semiconductors for thin-film transistors based on the indenofluorenebis(dicyanovinylene) core

We present here the synthesis, characterization, and field-effect performance of a novel n-channel semiconducting molecule TIFDMT and of the corresponding thiophene-based copolymer P-IFDMT4 based on the indenofluorenebis(dicyanovinylene) core. TIFDMT-based field-effect transistors fabricated by spin-coating exhibit high electron mobilities of 0.10-0.16 cm2/V s in air, low turn-on voltages (0 to +5 V), and high on/off ratios of 10(7)-10(8). These devices also exhibit excellent air stability over a prolonged time of storage in ambient conditions. P-IFDMT4-based devices exhibit the first example of an air-stable ambipolar polymer processable from solution     

Pyromellitic diimides: minimal cores for high mobility n-channel transistor semiconductors

Three pyromellitic diimides were synthesized in high yields by one conventional reaction between pyromellitic dianhydride and various amines. The films made from these pyromellitic diimides derivatives exhibit a mobility up to 0.079 cm2/(V.s). In addition, the on/off ratios of n-channel devices are as high as 1 000 000.     

An asymmetric oligomer based on thienoacene for solution processed crystal organic thin-film transistors

A novel thienoacene-based conjugated oligomer, i.e.BTTT-T-C12, was designed and synthesized. Its highly asymmetric structural feature enables the preparation of two-dimensional single-crystalline thin films in millimetre size and ~100 nm thick by a solution processing method directly on the Si/SiO(2) substrate. Single crystal organic thin film transistors exhibit a mobility of 0.70 cm(2) V(-1) s(-1) and an on/off ratio of 5.7 × 10(4).     

Fabrication of electrochemical transistor based on pi-conjugate polymer Langmuir-Blodgett film

We fabricated an efficient organic electrochemical transistor (OECT) composed of polymer Langmuir-Blodgett (LB) film. The pi-conjugated polymer LB film, which was constructed from a poly(N-dodecylacrylamide) (pDDA) and poly(3-hexylthiophene) (PHT) mixture, was used as a conduction channel layer to connect source and drain electrodes. The mixed-polymer LB film was characterized using UV-vis spectroscopy, X-ray diffraction (XRD), atomic force microscopy (AFM), and cyclic voltammetry. Subsequent UV spectra measurements, XRD measurements, and AFM measurements show that PHT forms a crystalline lamellar domain in the layered structure of pDDA. The OECT included 10 layers of the mixed-polymer LB film as the conduction channel layer. The OECT showed an on/off ratio of 1.1x10(4) and mobility of 7.5x10(-2) cm2 V(-1) s(-1) at low gate (VG=-1.2 V) and source-drain voltages (VDS=-0.5 V). Moreover, the necessary charge to operate the OECT was 1.1x10(-9) mol of e(-1) cm(-2), which was 2 orders smaller than the value reported using a similar device structure. The relatively high on/off ratio and low charge consumption suggest that this OECT, which is fabricated from pi-conjugated polymer LB films, is applicable to macroelectronic devices.     

Redox energetics and kinetics of uranyl coordination complexes in aqueous solution

Detailed voltammetric results for five uranyl coordination complexes are presented and analyzed using digital simulations of the voltammetric data to extract thermodynamic (E(1/2)) and heterogeneous electron-transfer kinetic (k(0) and alpha) parameters for the one-electron reduction of UO(2)(2+) to UO(2)(+). The complexes and their corresponding electrochemical parameters are the following: [UO(2)(OH(2))(5)](2+) (E(1/2) = -0.169 V vs Ag/AgCl, k(0) = 9.0 x 10(-3) cm/s, and alpha = 0.50); [UO(2)(OH)(5)](3-) (-0.927 V, 2.8 x 10(-3) cm/s, 0.46); [UO(2)(C(2)H(3)O(2))(3)](-) (-0.396 V, approximately 0.1 cm/s, approximately 0.5); [UO(2)(CO(3))(3)](4-) (-0.820 V, 2.6 x 10(-5) cm/s, 0.41); [UO(2)Cl(4)](2-) (-0.065 V, 9.2 x 10(-3) cm/s, 0.30). Differences in the E(1/2) values are attributable principally to differences in the basicity of the equatorial ligands. Differences in rate constants are considered within the context of Marcus theory of electron transfer, but no specific structural change(s) in the complexes between the two oxidation states can be uniquely identified with the underlying variability in the heterogeneous rate constants and electron-transfer coefficients.     

高效毛细管电泳分析羊栖菜多糖对肿瘤机体红细胞合淌度的影响

为了分析羊栖菜多糖（SFPS）对肿瘤机体红细胞合淌度的影响,建立了肿瘤动物模型,分高、中、低剂量腹腔给予羊栖菜多糖7 d,采集并制备红细胞悬液,应用高效毛细管电泳法检测红细胞的合淌度。实验条件:毛细管为75 μm×50 cm,电泳缓冲液为含2 g/L羟丙基甲基纤维素的磷酸盐溶液(0.1 mol/L,pH 7.4),压力进样为3.448 kPa×10 s,分离电压为20 kV,柱温为25 ℃,电渗淌度为2.16×10-4 cm2·V-1·s-1。实验结果表明：羊栖菜多糖能降低肿瘤机体红细胞的电泳迁移时间(阴性对照组为15.76 min,SFPS低剂量组为13.96 min,SFPS中剂量组为12.90 min,SFPS高剂量组为13.51 min,正常对照组为11.51 min),增加红细胞的合淌度(阴性对照组为1.06×10-4 cm2·V-1·s-1,SFPS低剂量组为1.19×10-4 cm2·V-1·s-1,SFPS中剂量组为1.29×10-4 cm2·V-1·s-1,SFPS高剂量组为1.23×10-4 cm2·V-1·s-1,正常对照组为1.45×10-4 cm2·V-1·s-1),SFPS 3个剂量组红细胞的合淌度与阴性对照组比较均有非常显著的差异(P＜0.01)。羊栖菜多糖能够改变肿瘤机体红细胞的合淌度,并使之趋向于正常机体水平,这可能与其改变红细胞表面的电荷密度有关。高效毛细管电泳法可以作为检测红细胞生理状态和功能的一种辅助工具。     

Diketopyrrolopyrrole as a p-channel organic semiconductor for high performance OTFTs

A new diketopyrrolopyrrole derivative 1 exhibits excellent hole mobilities of 0.7 cm(2) V(-1) s(-1) and a current on/off ratio of 10(6) under ambient conditions in bottom-gate, top-contact organic thin film transistors (OTFTs) fabricated by vacuum deposition.     

Synthesis and characterization of soluble oligo (9,10-bisalkynylanthrylene)s

[structure: see text] Soluble oligo(9,10-bialkynylanthrylene)s up to pentamers were synthesized by means of the Suzuki coupling reaction. A solution processed thin film field-effect transistor from pentamer OA-5b shows a charge carrier mobility of 2.95 x 10(-)(3) cm(2)/V x s.     

一种直接测定微流控芯片电渗流速度的新方法

随着微芯片技术的成熟,越来越迫切地需要有一个准确而简洁的电渗流速度的检测方法。根据荧光物质罗丹明123（Rh123）在不同pH缓冲溶液中迁移时间的变化,推导出Rh123在pH 9和10条件下分别有中性分子存在,而中性分子的移动速度等于电渗流速度,因此建立了直接以Rh123中性分子为标记物测定电渗流速度的方法。通过直接检测Rh123中性分子的迁移时间,计算得出所用玻璃微流控芯片在pH 9.3和pH 10.1的电渗流速度为3.9×10-4 cm2/(s·V)和4.1×10-4 cm2/(s·V),与经典方法对照无明显差异。     

Solution processed high performance pentacene thin-film transistors

High performance thin-film transistors were fabricated using a new precursor of pentacene through a multiple spin-heat procedure. High quality pentacene thin films can be prepared by this method and hence a FET device can be made in a top-contact configuration. The device exhibited a remarkable field-effect mobility of 0.38 cm(2) V(-1) s(-1) with an on/off ratio of 10(6).