Low-frequency fluctuation in multimode semiconductor laser subject to optical feedback

Dynamics of a semiconductor laser subject to moderate optical feedback operating in the low-frequency fluctuation regime is numerically investigated.Multimode Lang-Kobayashi(LK)equations show that the low-frequency intensity dropout including the total intensity and sub-modes intensity is accompanied by sudden dropout simultaneously,which is in good agreement with experimental observation.The power fluctuation is quite annoying in practical applications,therefore it becomes important to study the mechanism of power fluctuation.It is also shown that many factors,such as spontaneous emission noise and feedback parameter,may influence power fluctuation larger than previously expected.     

Quantum dot semiconductor laser with optoelectronic feedback

The optoelectronic feedback (OEF) in quantum dot semiconductor lasers (QD SLs) is studied theoretically where a model includes wetting layer ground state and excited state for QDs are included separating electrons and holes in their dynamics. Both positive and negative OEF are studied. The time series of photon density, the phase portraits of carriers in the states are studied. The parameters affecting OEF are examined where an excitability is seen. The QD SL is found to be more sensitive to the changes in time delay compared with other SLs and a complicated routs are seen in the behavior of QD SL.     

Analysis of the fast recovery dynamics of a semiconductor laser with feedback in the low-frequency fluctuation regime

We experimentally investigate the temporal evolution of the power of an external cavity semiconductor laser in the low-frequency fluctuation regime with subnanosecond resolution. We show, for the first time to our knowledge, that generally the laser power drops to a value significantly different from the solitary laser power. We demonstrate the analogy between the recovery of the laser intensity and the turn-on transient of a semiconductor laser.     

Coherence and correlation in laser excitation of semiconductor quantum wells

Il Nuovo Cimento D - The concept of coherence due to optical excitation of an ensemble of two-level atoms is relatively simple and well established. For the laser-excited electron-hole pairs or...     

Quantum design of semiconductor active materials: laser and amplifier applications

We present an overview of a novel first‐principles quantum approach to designing and optimizing semiconductor quantum‐well material systems for target wavelengths. Using these microscopic inputs as basic building blocks we predict the light‐current (LI) characteristic for a low power InGaPAs ridge laser without having to use adjustable fit parameters. Finally we employ these microscopic inputs to develop sophisticated simulation capabilities for designing and optimizing end packaged hi gh power laser structures. As an explicit example of the latter, we consider the design of a vertical external cavity semiconductor laser (VECSEL).     

Quantum electrodynamics in a laser and the electron laser collision

Quantum electrodynamics in a laser is formulated, in which the electron–laser interaction is exactly considered, while the interaction of an electron and a single photon is considered by perturbation. The formulation is applied to the electron– laser collisions. The effect of coherence between photons in the laser is therefore fully considered in these collisions. The possibility of γ-ray laser generation by use of this kind of collision is discussed.     

Quantum nondemolition measurement of photon—number distribution for a weak cavity field with resonant atoms

We propose a quantum nondemolition measurement of the photon-number distribution for a weak cavity field with no more than two photons. The scheme is based on the resonant interaction of atoms with the cavity field, and thus the required interaction time is much shorter than that using dispersive interaction. This is important in view of decoherence. Our scheme can also be used to generate even and odd coherent states for a weak cavity field with resonant atoms.     

Quantum electrodynamics in a laser and the electron laser collisionQuantum electrodynamics in a laser and the electron laser collision

Quantum electrodynamics in a laser is formulated, in which the electron-laser interaction is exactly considered, while the interaction of an electron and a single photon is considered by perturbation. The formulation is applied to the electron- laser collisions. The effect of coherence between photons in the laser is therefore fully considered in these collisions. The possibility of y-ray laser generation by use of this kind of collision is discussed.     

Model of lock-in in a ring laser and a semiconductor laser gyro

It is assumed that the process of lock-in in a ring laser has a finite transient time. This assumption serves as a basis for developing a semiconductor laser gyro. A semiconductor optical amplifier is applied as an amplifying medium, and a ring resonator represents a long optical fiber. The injection of an external single-frequency light into a ring resonator with subsequent circulation of counterpropagating waves is used. The light characteristics of the semiconductor laser gyro are discussed, and the rotation sensitivity of the gyro is demonstrated.     

Quantum coherence in a one-electron semiconductor charge qubit

We study quantum coherence in a semiconductor charge qubit formed from a GaAs double quantum dot containing a single electron. Voltage pulses are applied to depletion gates to drive qubit rotations and noninvasive state readout is achieved using a quantum point contact charge detector. We measure a maximum coherence time of ～7 ns at the charge degeneracy point, where the qubit level splitting is first-order insensitive to gate voltage fluctuations. We compare measurements of the coherence time as a function of detuning with numerical simulations and predictions from a 1/f noise model.     

压缩真空态下介观耦合电路的量子涨落及电源对量子涨落的影响

通过对无耗耦合含源介观电路的量子化和哈密顿量的对角化,求出了耦合电路的能谱,研究了压缩真空态下介观电路中电荷、电流的量子涨落和电源对量子涨落的影响。     

Exchange and correlation effects in a semiconductor quantum-well wire

The exchange and correlation effects of a quasi-one-dimensional electron gas are investigated by using the self-consistent-field approximation theory proposed by Singwi, Tosi, Land and Sjölander for the response function of the electron system. The present results are applied to GaAs-GaAlAs rectangular quantum-well-wires with the appropriate form factors that take into account the influence of the finite width of the electron layer. The plasmon dispersion relation and structure factor are calculated as a function of electron density and thickness of the wire. Results for the total energy per electron including kinetic, exchange and correlation energies and electron effective mass are presented. The Hartree-Fock and the random-phase approximation (RPA) results are also presented for comparison. We have found that exchange and correlation effects are more evident in wires of reduced dimensions.     

Quantum correlation between two qubits induced by a common heat bath

In terms of geometric discord, we study quantum correlations between two qubits interacting with a common heat bath. A necessary and sufficient condition for zero discord for arbitrary two-qubit density matrix is derived. With this condition, we show that a common heat bath can always induce two-qubit quantum correlations if both qubits are initially prepared in arbitrary superposition of “pointer basis”.     

Quantum conductance through a uniform scatterer in a narrow-wire semiconductor

The quantum conductance for electrons scattering from a uniform scatterer in a narrow-wire semiconductor is calculated. Instead of getting the conductance directly from the calculation of transmission coefficient, we calculate the reflection coefficient instead. The transmission coefficient is then calculated by using the conservation law, T=I−R. This alternative method can avoid the instability of the conductance obtained by including more evanescent modes for a finite-range scatterer in a narrow-wire semiconductor. This method is applied to a semi-infinite strip potential barrier and a rectangular potential barrier in a narrow wire. The quantum stepwise conductance is obtained in both cases. For a repulsive rectangular potential barrier, there are oscillations in each stepwise conductance. For an attractive rectangular potential barrier, there exist multiple quasi-bound states below the sub-band energies which can cause the drop of the quantum conductance. The effect of the continuum quasi-bound states diminishes as the energy of the incident electron increases, but the influence of the discrete quasi-bound states still persists.     

Quantum thermal field fluctuation induced corrections to the interaction between two ground-state atoms

We generalize the formalism proposed by Dalibard, Dupont-Roc, and Cohen-Tannoudji (the DDC formalism) in the fourth order for two atoms in interaction with scalar fields in vacuum to a thermal bath at finite temperature T, and then calculate the interatomic interaction energy of two ground-state atoms separately in terms of the contributions of thermal fluctuations and the radiation reaction of the atoms and analyze in detail the thermal corrections to the van der Waals and Casimir–Polder interactions. We discover a particular region, i.e. $\sqrt[4]{{\lambda }^{3}\beta }\ll L\ll \lambda $ with L, β and λ denoting the interatomic separation, the wavelength of thermal photons and the transition wavelength of the atoms respectively, where the thermal corrections remarkably render the van der Waals force, which is usually attractive, repulsive, leading to an interesting crossover phenomenon of the interatomic interaction from attractive to repulsive as the temperature increases. We also find that the thermal corrections cause significant changes to the Casimir–Polder force when the temperature is sufficiently high, resulting in an attractive force proportional to TL⁻³ in the λ ≪ β ≪ L region, and a force that can be either attractive or repulsive and even vanishing in the β ≪ λ ≪ L region depending on the interatomic separation.     

Energy fluctuation and correlation in Tsallis statistics

We investigate the fluctuation of the energy in the framework of Tsallis statistics and find the correlation plays an important role in energy fluctuations. In Tsallis statistics, the correlation is induced by the nonextensivity of Tsallis entropy and exists between particles even if the particles are dynamically independent. By taking the generalized ideal gas as an example, we get that when the particle number N is large enough, the relative fluctuation of the energy is proportional to 1/N instead of in Boltzmann statistics. Thus, the relative energy fluctuation is much smaller in Tsallis statistics than that in Boltzmann statistics. Besides, we demonstrate that the introduction of correlation between particle energies leads to smaller energy fluctuations in Tsallis statistics.