Self-consistent electronic structure for a Mo (001) surface with saturated H adsorption

The band structure for a Mo (001) surface covered with a saturated monolayer of hydrogen is calculated self-consistently using the pseudopotential method in a mixed-basis representation. Two adsorbate bands are found below the bottom of the molybdenum bulk bands. Most of the intrinsic surface states of the clean (001) surface also exist on the hydrogen covered surface at lower energies. The results are used to identify H induced structures observed in recent photoemission studies of hydrogen on W (001).     

Relativistic electronic structure of the Pb (001) surface

The surface electronic band structure of the Pb (001) was calculated using the self-consistent, first-principles linear-augmented-plane-wave method and the norm-conserving pseudopotentiai method. In the nonrelativistic case, forbidden gaps appear above and below the Fermi levelin the bulk projected band structure of lead. An occupied surface state at the point and two surface states in a wide forbidden gap above E_F are found. A characteristic feature of the electronic structure of the Pb (001) surface is the absence of a surface state within the forbidden S-P gap in the vicinity of the point. The inclusion of scalar-relativistic effects leads to the merger of several S-P gaps into one wide gap extending throughout the entire Brillouin zone. At the same time, the occupied state at point extends to point and its energy decreases by 2 eV. New, relatively weak surface states in the direction and unoccupied states in the vicinity of the point appear. An unoccupied surface state is found at the bottom of the forbidden gap at point . Including the contribution of the spinorbit pseudopotentiai leads to the appearance of two-spin orbit gas; however, the surface level structure is practically unchanged (except for the disappearance of the unoccupied surface state of P_z-symmetry at point ).Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 47–53, October, 1991.     

Angular dependence of the electron energy loss spectra from a clean and adsorbate covered W(001) surface

A dispersion analysis of the EELS from a W(001) surface in the range 1 < ΔE < 35 eV has been performed and compared with recent and complete optical data for tungsten. The non-dispersive (k ～ 0) EELS correlated well with a combination of the surface and bulk loss functions calculated from the optical data. Losses at 1–5 eV and a pair at 32 and 34.5 eV were assigned to interband and N_6,7 core ionization excitations respectively. The principal bulk and surface plasmon losses were identified at 24.0 and 20.3 eV respectively. Two further losses at 14.0 and 9.6 eV were also observed and assigned to subsidiary plasmon losses. All four plasmon losses showed only minimal energy dispersion, never exceeding 1.5 eV. A momentum selectivity for separating bulk and surface interband losses was demonstrated with the non-dispersive losses arising from excitations within the bulk even with incident energies as low as 88 eV, whereas their dispersive counterparts were extremely sensitive to the chemical state of the surface. New adsorbate derived losses which develop during adsorption were associated with excitations from the new deep lying adsorbate levels to final state levels at or near the Fermi level. It was concluded that this final state was also responsible for the N_6,7 ionization losses.     

Electronic surface resonances and the thermally induced W(001) structure transition

The surface weighted effective potentials of the clean W(001) surface at temperatures T = 550 K[(1×1)] and T = 440 K[(√2×√2)R45°] are experimentally obtained from the surface resonance band structure. It is deduced that the transition W(001)-(1×1) → (√2×√2)R45° is a temperature-dependent reconstruction in which there is a contraction of the top layer atoms towards the bulk involving periodic displacements of the atoms normal to the surface.     

Valence surface electronic states on Ge(001)

The optical, electrical, and chemical properties of semiconductor surfaces are largely determined by their electronic states close to the Fermi level (E{F}). We use scanning tunneling microscopy and density functional theory to clarify the fundamental nature of the ground state Ge(001) electronic structure near E{F}, and resolve previously contradictory photoemission and tunneling spectroscopy data. The highest energy occupied surface states were found to be exclusively back bond states, in contrast to the Si(001) surface, where dangling bond states also lie at the top of the valence band.     

Comparison between Rydberg surface resonances on W(001) and W(110)

Comparison is made between high-resolution LEED measurements of electronic surface resonances in the (00) beam from W(001) and W(110). The study of W(110) extended to several polar angles of incidence provides new information that helps to explain the data obtained on W(001) at a fixed angle.     

Spectral density of surface states: Clean W(001) surface

The transfer matrix approach is applied to calculate the spectral density of electronic states for the W(001) surface. We use a tight-binding hamiltonian with a nine function basis: 6s, 6p and 5d. Results for $\text{k}$ points along the Σ and ? symmetry lines are presented for occupied states. Both surface and bulk features of the spectral density are in good agreement with angularly resolved photoemission spectra.     

Atomic and electronic structure of the Si(001) surface induced by hydrogen-adsorption

The initial stage of hydrogen (H) adsorption on the Si(001) surface is theoretically investigated to clarify the atomic and electronic structure induced by the adsorption. For this purpose, the electronic states are calculated in the density functional approach with the DV(discretized variation)-Xα-LCAO method. We also simulate the scanning tunneling microscopy (STM) image and the scanning tunneling spectroscopy (STS) spectrum in the first-principles approach. Our results of the STM image do not support the asymmetric dimer structure of the substrate with a H atom bonded to the upper Si atom. They conclude that the bright ball-like spot in the observed images comes from the free dangling bond induced on the remaining Si atom of the reacted dimer. However, the single particle picture cannot reproduce the observed features of the STS spectrum at the spot. We discuss that all the features can be well explained by the Coulomb blockade effect due to the electron correlation in the dangling bond state.     

Cl chemisorption on the Pd(001) surface: A self-consistent LCAO calculation of electronic structure

The total and partial densities of states and work functions for the clean Pd(001) surface and for a c(2×2) Cl overlayer on this surface are calculated using a self consistent Gaussian LCAO technique. The adlayer increases the work function of the clean surface by 0.8 eV and leads to a distinct split off feature in the total density of states. The band structure of the bands composing this feature are compared to the bands of the isolated Cl layer.     

PbTe(001)表面原子几何结构和电子结构的第一性原理计算

用第一性原理的密度泛函理论计算了PbTe（001）表面的几何结构和电子结构.计算结果表明：PbTe（001）表面不发生重构，但表面几层原子表现出明显的振荡弛豫现象，其中第一、第二层间距减小4.5%，第二、第三层间距增加2.0%，并且表面层原子出现褶皱.表面带隙在X 点，带隙变宽，在基本带隙中不引入新的表面态，而导带底和价带顶附近等多处出现新的表 面共振态；弛豫后费米面处态密度很低，所以表面结构很稳定. 关键词： 密度泛函理论 表面几何结构 表面电子结构 PbTe     

Atomic and electronic structures of GaAs (001) surface

The atomic and electronic structures of α, β, β₂, and ζ reconstructions for the Ga-terminated GaAs (001)-(4×2) surface are investigated in the framework of the pseudopotential approach. Total, surface, and local densities of electron states, electron-energy spectra, and relative surface energies of the structures under consideration are calculated. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 44–52, October, 2006.