Structural stability of heat-treated CoN/CN soft X-ray multilayers fabricated by dual-facing-target sputtering

286 , 176 (1996)]. (1) The interdiffusion critical wavelengths were calculated as 2.00–2.04 nm at temperatures ranging from 473 to 523 K, which is equal to those of Co/C multilayers within the experimental error, indicating that the interdiffusion behaviours in the CoN/CN multilayers are still decided by the thermodynamic properties of the Co-C system. (2) The effective interdiffusivities and macroscopic diffusion coefficients are smaller. (3) The activation energy for diffusion is larger. The features imply that it is possible to improve the thermal stability of Co/C multilayers by doping with N atoms. The high-temperature annealing results imply that the destructive threshold of the CoN/CN multilayers is 100–200 °C higher than that of Co/C multilayers. The small-angle X-ray diffraction of CoN/CN soft X-ray multilayers indicates that the period expansion of the multilayers is only 4% at 400 °C, and the interface pattern still exists even if they were annealed at 700 °C. The large-angle X-ray diffraction and transmission electron microscopy analysis reveal that the crystalline process is significantly retarded if doped with N atoms, leading to a smaller grain size at higher annealing temperatures. The significant improvement of the thermal stability can be interpreted with Raman spectroscopy and X-ray photoelectron spectroscopy analysis. The Raman spectra give the evidence that the formation of the sp³ bonding in the CN sublayers can be suppressed effectively by doping with N atoms, and thus the period expansion resulting from the changes in the density of CN layers can be decreased considerably. The X-ray photoelectron spectra give information about existence of the strong covalent bonding between N atoms and the ionic bonding between Co and N atoms, which can slow down the tendency of the structural relaxation. The interstitial N atoms decrease the mobility of Co atoms, and thus the fcc Co and hcp Co coexist even though the annealing temperature is much higher than the phase transformation temperature of 420 °C, leading to the suppression of the grain growth. Received: 29 May 1997/Accepted: 8 September 1997     

On the interplay of internal/external stress and thermal stability of Mo/Si multilayers

Mo/Si multilayer (ML) systems were deposited on Si(100) substrate by DC magnetron sputtering. The MLs were annealed at temperatures up to 440 °C under high-vacuum conditions, both with and without the influence of external mechanical stress, and characterized before and after thermal treatment by means of X-ray reflectometry, wide-angle X-ray scattering and optical microscopy. Two ML configurations were compared, one composed of pure Mo and Si layers and another with additional B₄C and C interlayers at the Mo/Si interfaces, respectively. The external mechanical stress applied caused bending of the substrate and adherent ML, with an accompanied internal stress of approximately 60 GPa. An important outcome of the investigation was that dedicated release bending of MLs can reduce/compensate the influences of the internal stressed states. Thermal stability could be increased for both ML systems during sample annealing. For ML samples with additional B₄C and C layers at the Mo/Si interfaces, the influence of external stress was more significant compared to that for pure Mo/Si MLs. This indicates that the additional layers mainly act as diffusion barriers and additionally as stress-relaxing buffers. PACS 68.60.Dv; 68.65.Ac; 42.79.Bh     

Investigation of the thermal stability of Mg/Co periodic multilayers for EUV applications

Applied Physics A - We present the results of the characterization of Mg/Co periodic multilayers and their thermal stability for the EUV range. The annealing study is performed up to a temperature...     

Modulation and thermal stability of hydrogen in amorphous silicon

Hydrogenated amorphous silicon can be obtained by reactive evaporation of silicon under a flow of hydrogen atoms. By modulating the pressure of hydrogen, it is possible to prepare multilayers of type Si/Si:H/Si/Si:H/ … with thicknesses of bilayers less than 90 Å. Low-angle X-ray scattering shows diffraction peaks corresponding only to the modulation of atomic density, but low-angle neutron scattering permits to see the modulation of the isotopes hydrogen and deuterium. The thermal stability of the silicon atomic density modulation and of the hydrogen modulation is discussed.     

Perpendicular magnetic anisotropy and thermal stability in Co2FeAl0.5Si0.5/Pt multilayers

Perpendicular magnetic anisotropy (PMA) and thermal stability of Co₂FeAl_0.5Si_0.5 (CFAS)/Pt multilayer structure prepared by dc magnetron sputtering have been studied. It is found that the strength of PMA depends on the thickness of CFAS layer, and the maximum effective thickness of CFAS with PMA is demonstrated to be about 1.5 nm. The interfacial anisotropy energy K _s is estimated to be 0.45 erg/cm², which is larger than those of Co/Pd and Co/Ni multilayers and responsible for the strong PMA of the CFAS/Pt multilayer. The annealing treatments will give rise to the loss of PMA of CFAS/Pt multilayer and has the relatively less influence with large period number N. With the increasing of the period number N, the CFAS/Pt multilayers tend to have wasp-waist-shaped easy-axis hysteresis loops and multidomain structures.     

MgO/Pt界面对增强Co/Ni多层膜垂直磁各向异性及热稳定性的研究

采用直流磁控溅射法在玻璃基片上制备了Pt底层和MgO/Pt双底层的Co/Ni多层膜样品, 通过反常霍尔效应研究了不同MgO厚度和退火温度对样品垂直磁各向异性(perpendicular magnetic anisotropy, PMA)的影响. 随着底层中MgO厚度的逐渐增加, 样品的矫顽力也随之增强, 霍尔电阻变化不大; 对样品进行退火处理后发现, 单纯Pt底层的Co/Ni多层膜随着退火温度的升高, 霍尔电阻逐渐降低, 矫顽力则迅速降低, 热稳定性较差; 而当MgO/Pt双底层的样品在200 ℃退火后矫顽力大幅增加, 霍尔电阻略微有所减小, 更高的退火温度使得Co和Ni合金化, 导致多层膜的PMA特征减弱.     

Thermal stability of Mo/Si multilayer soft-X-ray mirrors fabricated by electron-beam evaporation

Mo/Si multilayers are fabricated by electron-beam evaporation in UHV at different temperatures (30° C, 150° C, 200° C) during deposition. After completion their thermal stability is tested by baking them at temperatures (T _bak) between 200° C and 800° C in steps of 50° C or 100° C. After each baking step the multilayers are characterized by small angle Cu_K-X-ray diffraction. Additionally, the normal incidence soft-X-ray reflectivity for wavelengths between 11 nm and 19 nm is determined after baking at 500° C. Furthermore, the layer structure of the multilayers is investigated by means of Rutherford Backscattering Spectroscopy (RBS) and sputter/Auger Electron Spectroscopy (AES) technique. While the reflectivity turns out to be highest for a deposition temperature of 150° C, the thermal stability of the multilayer increases with deposition temperature. The multilayer deposited at 200° C stands even a 20 min 500° C baking without considerable changes in the reflectivity behaviour.     

Fe掺杂氢化非晶碳薄膜制备及其热稳定性能

以H2、反式-2-丁烯（T2B）和二茂铁混合气体为工作气体,用金属有机等离子体增强化学气相沉积法（PECVD）制备了Fe掺杂氢化非晶碳（a-C:H:Fe）薄膜。使用X射线光电子能谱（XPS）对a-C:H:Fe薄膜成分进行了分析。使用台阶仪、场发射扫描电镜（FESEM）、热重分析和紫外可见分光光度计（UV-VIS）,对比分析了a-C:H薄膜和a-C:H:Fe薄膜的沉积速率、表面形貌、热稳定性和光学带隙变化。研究表明：相同制备条件下,相比a-C:H薄膜,a-C:H:Fe薄膜的沉积速率高,表面颗粒小,容易碳化,光学带隙变窄。     

Fe掺杂氢化非晶碳薄膜制备及其热稳定性能

 以H₂、反式-2-丁烯（T₂B）和二茂铁混合气体为工作气体,用金属有机等离子体增强化学气相沉积法（PECVD）制备了Fe掺杂氢化非晶碳（a-C:H:Fe）薄膜。使用X射线光电子能谱（XPS）对a-C:H:Fe薄膜成分进行了分析。使用台阶仪、场发射扫描电镜（FESEM）、热重分析和紫外可见分光光度计（UV-VIS）,对比分析了a-C:H薄膜和a-C:H:Fe薄膜的沉积速率、表面形貌、热稳定性和光学带隙变化。研究表明：相同制备条件下,相比a-C:H薄膜,a-C:H:Fe薄膜的沉积速率高,表面颗粒小,容易碳化,光学带隙变窄。     

基于密度泛函理论的SinCN团簇结构及稳定性的研究

利用密度泛函理论(DFT)中的B3LYP/6-311G*方法,对SinCN(n=2～6)团簇的几何结构、振动频率和基态能量等性质进行了研究,分别讨论了其基态和亚稳态结构的能量及自旋多重态.振动频率和振动强度被用来判断体系的稳定性.结果表明,随着Si原子数的增加,零点振动能、热容量和熵近似线性增长,其平均增幅分别为0.80 kcal/mol、5.20 cal/mo1?K和12.72 cal/mol?K.n为偶数的SinCN团簇比n为奇数的更为稳定.     

Size-dependent thermodynamic criterion for the thermal stability of binary immiscible metallic multilayers

With the aim of understanding the thermal stability of binary immiscible metallic multilayers, we propose a generally size-dependent thermodynamic criterion for determining the interface alloying in multilayers, with respect to the size-dependent interface energy of binary metal systems. Taking the copper/tungsten bilayer as an example, we obtain the interfacial alloying phase diagram based on the proposed thermodynamic model. Our theoretical predictions are consistent with experiments, implying that the size-dependent thermodynamic criterion of the thermal stability could be expected to be applicable to many multilayers.     

Effect of B4C diffusion barriers on the thermal stability of Sc/Si periodic multilayers

The optical properties of Sc/Si periodic multilayers are analyzed at three wavelengths in the X-ray range: 0.154, 0.712 and 12.7 nm. Fitting the reflectivity curves obtained at these three wavelengths enable us to constrain the parameters, thickness, density and roughness of the various layers, of the studied multilayers. Scattering curves were also measured at 12.7 nm on some samples to obtain an estimate of the correlation length of the roughness. Two sets of multilayers are used, with and without B₄C diffusion barrier at the interfaces. To see the efficiency of the B₄C layers the measures are performed after annealing up to 400 °C. A dramatic change of the structure of the Sc/Si multilayer is observed between 100 and 200 °C leading to a strong loss of reflectivity. For the Sc/B₄C/Si/B₄C multilayer the structure is stable up to 200 °C after which a progressive evolution of the stack occurs.     

Extraordinary Hall effect on Fe-rich amorphous thin films and Fe-rich/Cu multilayers

In this study we investigated the magnetic and transport properties of thin Fe-rich amorphous films and Fe-rich/Cu multilayers. We compared the extraordinary Hall effect in these two types of samples and discussed it in terms of thickness and sample structure. The thicker films exhibited a strong in-plane magnetic anisotropy, and by decreasing film thickness both saturated Hall resistivity and Hall sensitivity increase. A Hall resistivity value of 20 μΩ cm is observed in 100 nm thick Fe-rich films at 12 K and a sensitivity of 1.3 Ω/T is obtained at room temperature. Electrical conductance increases and Hall resistivity decreases when the films are sandwiched with Cu.     

Magnetization reversal and domains structures in (Co/Ni/Co/Pt) multilayers

Multilayers of [Co/Ni(t_Ni)/Co/Pt]_×4 are investigated for different Ni insertion layer thicknesses. The resulting magnetic properties and magnetic domain structures are compared with [Co/Ni]_×8 multilayers. As determined by magneto-optical Kerr effect microscopy and a vibrating sample magnetometer measurements, all multilayers exhibited a perpendicular magnetic anisotropy. It is found that the nucleation field and magnetic coercivity of [Co/Ni(t)/Co/Pt]_×4 multilayers are lower than (Co/Ni)_×8 and decreased with Ni thickness. Magnetization decay measurements reveal that these multilayers did not show an exponential decay behavior as was observed in rare earth transition metal alloys. Very narrow wires will remain stables for several hours even with an applied magnetic field closer to the coercivity. Insertion of very thin Ni in (Co/Pt) multilayers offers a good way to optimize the magnetic properties of the material and adjust the domain size for nanowire-based devices.     

碳纳米管-硅纳米线复合结构的形成和热稳定性

通过分子动力学方法模拟了在碳纳米管内填充一定数目的半导体元素硅形成碳纳米管-硅纳米线复合结构的过程,并采用Lindemann指数研究了这种复合结构的热稳定性．计算结果表明,当考虑碳纳米管和硅纳米线轴向方向的周期性边界条件之后,在C（13,0）和C （14,0）碳纳米管内能够形成亚稳结构的硅纳米线Si₁₆NW和Si₂₀NW,从而获得一种碳纳米管-硅纳米线的新型复合结构．通过计算这种复合结构的Lindemann指数,可以看到由于碳纳米管的保护作用,碳纳米管包裹的硅纳 关键词： 复合结构 纳米线 碳纳米管 分子动力学     

Temperature‐dependent thermal properties of Ru/C multilayers

Multilayers made of Ru/C are the most promising candidates when working in the energy region 8–20 keV. The stability of its thermal properties, including thermal expansion and thermal conduction, needs to be considered for monochromator or focusing components. Ru/C multilayers with periodic thicknesses of 3, 4 and 5 nm were investigated in situ by grazing‐incidence X‐ray reflectometry and diffuse scattering in order to study their thermal expansion characteristics as a function of annealing temperature up to 400°C. The thermal conductivity of multilayers with the same structure was also measured by the transient hot‐wire method and compared with bulk values.