Some Features in the behavior of the density of superconducting condensate in superconductors

The correlation between the density ρ_s(T→0) of superconducting condensate and the superconducting transition temperature T _c in underdoped HTSC systems is considered. It is shown that the linear relation between ρ_s(0) and T _c observed in some experiments can easily be interpreted in the framework of the conventional Bardeen-Cooper-Schrieffer (BCS) model without invoking any exotic superconductivity models.     

Thermophysical study of structural phase transitions in Na<Subscript>0.95</Subscript>Li<Subscript>0.05</Subscript>NbO<Subscript>3</Subscript> solid solution

Temperature dependences of specific heat C_p(T) and coefficient of thermal expansion ;(T) for Na_0.95Li_0.05NbO₃ sodium-lithium niobate ceramic samples are investigated in the temperature range of 100–800 K. The C_p(T) and α(T) anomalies at T₃ = 310 ± 3 K, T₂ = 630 ± 8 K, and T₁ = 710 ± 10 K are observed, which correspond to the sequence of phase transitions N ? Q ? S(R) ? T2(S). The effect of heat treatment of the samples on the sequence of structural distortions was established. It is demonstrated that annealing of the samples at 603 K leads to splitting of the anomaly corresponding to the phase transition Q → R/S in two anomalies. After sample heating to 800 K, the only anomaly is observed in both the C_p(T) and ;(T) dependence. Possible mechanisms of the observed phenomena are discussed.     

The influence of magnetic and structural heterogeneity on thermopower,magnetothermopower, electrical resistivity,and magnetoresistivity of Nd<Subscript>0.5</Subscript>Sr<Subscript>0.5</Subscript>MnO<Subscript>3</Subscript> manganite

The thermopower, S, magnetothermopower, ΔS/S, resistivity, ρ, and magnetoresistivity, Δρ/ρ, depending on the temperature T and magnetic field H, have been studied in an Nd_0.5Sr_0.5MnO₃ single crystal consisting of three types of clusters: an antiferromagnetic CE-type with charge-orbital ordering (below the Neel temperature T_NCE ~ 145 K) and an A-type with T_NA ~ 220 K; a ferromagnetic at 234 ≤ T ≤ 252 K, and a ferromagnetic metal phase below the Curie temperature T_C = 248 K. The thermopower was found to be negative, indicating the dominance of the electronic type of conductivity. In the S(T) curves, a sharp minimum is observed in the temperature range of 100 K ≤ T ≤ 133 K, close to T_NCE, where the absolute S value attains 53 μV/K. With a further increase in temperature, the absolute S value decreases rapidly; at 200 K it is equal to 7 μV/K. It then slightly increases, reaching its maximum value of 15 μV/K at a temperature of 254 K, which is close to T_C. The absolute thermopower decreased under the influence of the magnetic field; i.e., a negative magnetothermopower occurs. In {ΔS/S}(T) curves, a sharp minimum is observed at T = 130 K close to T_NCE, where the magnetothermopower reaches a huge value of ~45% at H = 13.23 kOe. A broad minimum in the {ΔS/S}(T) curves is observed near the Curie temperature and its value is also high, viz., ~15% in the maximum measuring magnetic field of 13.23 kOe. The extremely high magnetothermopower values mean that the charge-orbital ordered nanoclusters or ferron type make the main contribution to the thermopower of the entire sample. The behavior of the ρ(T) and {Δρ/ρ}(T) curves is similar to that of the S(T) and {ΔS/S}(T) dependencies, which is in agreement with this conclusion.     

Thermopower of <Emphasis Type="Italic">R</Emphasis>B<Subscript>12</Subscript> dodecaborides (<Emphasis Type="Italic">R</Emphasis> = Ho,Er, Tm,Lu)

Detailed measurements of the Seebeck coefficient S(T) in a broad range of temperatures (T = 2–300 K) have been performed for the first time for RB₁₂ dodecaborides (R = Ho, Er, Tm, Lu) in paramagnetic (diamagnetic for LuB₁₂) and antiferromagnetic states. At intermediate temperatures (10–300 K), the thermopower is determined by the interaction of carriers with phonon modes, which are related to the oscillations of rare-earth atoms in the framework of atomic clusters B₁₂. A comparative analysis of the parameters determining photon drag the thermopower related to the phonon drag and the results of galvanomagnetic measurements shows evidence for a significant effect of spin fluctuations on the behavior of charge transport characteristics in RB₁₂ compounds with strong electron correlations.     

Galvanomagnetic properties of Heusler alloy Co<Subscript>2</Subscript><Emphasis Type="Italic">Y</Emphasis>Al (<Emphasis Type="Italic">Y</Emphasis> = Ti,V, Cr,Mn, Fe,and Ni)

The Hall effect and the magnetoresistance of ferromagnetic Heusler alloys Co₂ YAl, where Y = Ti, V, Cr, Mn, Fe, and Ni have been studied at T = 4.2 K in magnetic fields H ≤ 100 kOe. Normal R ₀ and anomalous R _S Hall coefficients are shown to be maximal in magnitudes in the middle of the 3d period of the periodic table of elements. Coefficient R ₀ changes the negative sign to positive sign in going from weak (Y = Ti, V) to strong (Y = Cr, Mn, Fe, and Ni) ferromagnetic alloys. Constant R _S is positive and proportional to ρ^2.9 in all the alloys. The magnetoresistance of the alloys is not higher than several percent and its magnitude is changed fairly significantly in the dependence on the number of valence electrons z; the magnetoresistance signs vary arbitrarily.     

Magnetic properties of Fe<Subscript>3</Subscript>C ferromagnetic nanoparticles encapsulated in carbon nanotubes

The low-temperature dependences of magnetic characteristics (namely, the coercive force H _c , the remanent magnetization M _r , local magnetic anisotropy fields H _a, and the saturation magnetization M _s ) determined from the irreversible and reversible parts of the magnetization curves for Fe₃C ferromagnetic nanoparticles encapsulated in carbon nanotubes are investigated experimentally. The behavior of the temperature dependences of the coercive force H _c (T) and the remanent magnetization M _r (T) indicates a single-domain structure of the particles under study and makes it possible to estimate their blocking temperature T _B = 420–450 K. It is found that the saturation magnetization M _s and the local magnetic anisotropy field H _a vary with temperature as ～T ^5/2.     

(Pr–Ca) Manganites That Display Multiferroic Properties: High-Temperature Magnetic,Resistive, and Dielectric Measurements

Complex magnetic, resistive, and dielectric studies of Pr_1–xCa_xMnO₃ (х = 0.15–0.30) manganites reveal multiferroic properties at T?T_C in these solid solutions. States with local magnetization in the form of ferromagnetic clusters (nucleation temperature T* ≈ 700 K) and high dielectric constants coexist in the temperature window T_C ≤ T ≤ T*. There is a correlation between the temperature dependences of specific resistance and specific magnetization.     

Magnetic and electrical properties of the ZnGeAs<Subscript>2</Subscript>: Mn chalcopyrite

Doping of the ZnGeAs₂ semiconductor with manganese has produced compositions with spontaneous magnetization and high Curie temperatures of up to 367 K for the composition 3.5 wt% Mn. Their magnetic properties are characteristic of spin glasses at temperatures T < T _S and magnetic fields H < 11 kOe. In stronger fields, the spin glass state transforms into a phase with a spontaneous magnetization 4–5 times weaker than that to be expected under ferromagnetic ordering of all Mn ions. This is obviously a singly-connected ferromagnetic phase containing regions with frustrated bonds. The frustrated regions and the spin glass phase have inclusions of noninteracting ferromagnetic clusters, because these regions and the spin glass phase at low temperatures exhibit a strong increase in the magnetization M, with the dependence M(T) being described by the Langevin function. Measurements of the electrical resistivity ρ and the Hall effect have revealed that, for T < 30 K, the resistivity ρ of compositions with 1.5 and 3.5 wt % Mn is higher that at 30 K, which makes superexchange dominant and gives rise to the onset of the spin glass state. The nonuniform distribution of Mn ions in the spin glass phase accounts for the existence of isolated ferromagnetic clusters, their ferromagnetism being generated by carrier-mediated exchange. As the temperature increases still more, the increase in the mobility occurs faster than the decrease in the concentration, thus promoting an enhancement of the carrier-mediated exchange and growth of the ferromagnetic clusters in size, which at T = T _S come in contact. This signifies a transition from a multiply-to a singly-connected ferromagnetic phase, which contains microregions with frustrated bonds.     

Dissimilarity between metallic-like transport in the dielectric spin density wave and field-induced spin density wave states in (TMTSF)<Subscript>2</Subscript>PF<Subscript>6</Subscript>

We report similarities and differences of the transport features in the spin density wave (SDW) and in the field-induced SDW (FISDW) phases of the quasi-one-dimensional compound (TMTSF)₂PF₆. As temperature decreases below ≈2 K, the resistance in both phases exhibits a maximum and a subsequent strong drop. However, the characteristic temperature of the R(T) maximum and its scaling behavior in different magnetic fields B are evidence that the nonmonotonic R(T) dependences have different origin in SDW and FISDW regions of the phase diagram. We also found that the borderline T₀(B, P) which divides the FISDW region of the P-B-T phase diagram into the hysteresis and nonhysteresis domains terminates in the N=1 subphase; the borderline thus has no extension to the SDW N=0 phase.     

The special features of the Hall effect in GaMnSb layers deposited from a laser plasma

Epitaxial GaMnSb films with Mn contents up to about 10 at. % were obtained by deposition from a laser plasma in vacuum. The growth temperature T _s during deposition was varied from 440 to 200°C, which changed the concentration of holes from 3 × 10¹⁹ to 5 × 10²⁰ cm^?3, respectively. Structure studies showed that, apart from Mn ions substituting Ga, the GaMnSb layers contained ferromagnetic clusters with Mn and shallow acceptor defects of the Ga_Sb type controlled by the T _s value. Unlike single-phase GaMnSb systems studied earlier with negative anomalous Hall effect values and Curie temperatures not exceeding 30 K, the films obtained in this work exhibited a positive anomalous Hall effect, whose hysteresis character manifested itself up to room temperature and was the more substantial the higher the concentration of holes. The unusual behavior of this effect was interpreted in terms of the interaction of charge carriers with ferromagnetic clusters, which was to a substantial extent determined by the presence of Schottky barriers at the boundary between the clusters and the semiconducting matrix; this interaction increased as the concentration of holes grew. The absence of this effect in semiconducting compounds based on III–V Group elements with MnSb or MnAs ferromagnetic clusters was discussed in the literature; we showed that this absence was most likely related to the low hole concentrations in these objects.     

Heat capacity and thermodynamic properties of HoMnO<Subscript>3</Subscript> in the range of 364–1046 K

The temperature dependence of the molar heat capacity of HoMnO₃ has been measured by differential scanning calorimetry. The experimental data have been used to calculate the thermodynamic properties of the oxide compound (changes in the enthalpy H°(T)–H°(364 K), entropy S°(T)–S°(364 K), and reduced Gibbs energy Φ°(T)). The data on the heat capacity of HoMnO₃ have been generalized in the range of 40–1000 K.     

Superconducting properties of superlattices containing ferromagnetic layers

Using the microscopic theory formulated by de Gennes and extended by Takahashi and Tachiki, we calculate the transition temperatureT _c and the pair functionF for the superlattices consisting of superconducting and ferromagnetic layers. Superconducting layers. (s) and ferromagnetic layers (f) are modeled byV _s ≠0 andI _m,s =0 andV _f =0 andI _m,f ≠0, whereV _s .(V _f ) is the BCS coupling constant andI _m,s (I _m,f ) is the molecular field fors (f) layers.     

Role of the Cluster Structure of Amorphous Fe<Subscript>67</Subscript>Cr<Subscript>18</Subscript>B<Subscript>15</Subscript> Alloy in Magnetism and in the Changing of Electron Scattering Mechanisms under the Influence of Ion (Ar<Superscript>+</Superscript>) Irradiation

The contribution of clusters of different sizes to magnetism and the switching of electron scattering mechanisms in amorphous Fe₆₇Cr₁₈B₁₅ alloy during ion Ar⁺ irradiation is studied. The cluster magnetism is found to be related to the presence of clusters of the following two types: large α-(Fe, Cr) clusters of size D = 150–250 Å and small (D = 40–80 Å) clusters in a random intercluster medium. The generation of small ferromagnetic and antiferromagnetic clusters during ion irradiation leads to the formation of cluster glass, which affects the electrical properties of the alloy and causes a magnetic frustration. The temperature dependence of the barrier height is shown to characterize the magnetic state of the alloy in low fields. On the whole, the temperature dependence of the order parameter is a universal characteristic of the system. The temperature dependence of resistivity of initial alloys in the temperature range 98–300 K (ρ(T) ∝ T²) is determined by electron scattering by quantum defects, and the transition into a ferromagnetic state is revealed when the derivative ?ρ/?T ∝ T is analyzed. The increase in resistivity and the relation ρ ∝ T^1/2 in strongly inhomogeneous samples after irradiation at a dose Φ = 1.5 × 10¹⁸ ions/cm² are caused by weak localization effects, and the transition to a ferromagnetic state becomes obvious when the derivative ?ρ/?T ∝ T^–1/2 is considered. Irradiation by fluence Φ = 3 × 10¹⁸ ions/cm2 induces a giant (twofold) increase in the alloy density, restores the ferromagnetism of large clusters, decreases the resistivity by 37%, and restores the relation ρ(T) ∝ T², which results from the overlapping of the irradiation-induced small clusters when their concentration increases and from an increase in the alloy density. The overlapping of clusters lowers the barrier height and decreases the sensitivity of the alloy to an applied field. The relation ρ(T) ∝ T² is valid for the entire temperature range T = 2–300 K because of the partial screening of the magnetic moments of large clusters by a medium having the properties of cluster glass.     

Mechanism of carrier generation and the origin of the pseudogap and 60 K phases in YBCO

The mechanism of hole carrier generation is considered in the framework of a model assuming the formation of negative U centers (NUCs) in HTSC materials under doping. The calculated dependences of carrier concentration on the doping level and temperature are in quantitative agreement with experiment. An explanation is proposed for the pseudogap and 60 K phases in YBa₂Cu₃O_6+δ. It is assumed that a pseudogap is of superconducting origin and arises at temperature T* > T_c∞ > T_c in small nonpercolating clusters as a result of strong fluctuations in the occupancy of NUCs (T_c∞ and T_c are the superconducting transition temperatures of an infinitely large and finite NUC clusters, respectively). The T*(δ) and T_c(δ) dependences calculated for YBa₂Cu₃O_6+δ correlate with experimental dependences. In accordance with the model, the region between T*(δ) and T_c(δ) is the range of fluctuations in which finite nonpercolation clusters fluctuate between the superconducting and normal states due to NUC occupancy fluctuations.     

Magnetic polarons,clusters, and their effect on the electric properties of weakly doped lanthanum manganites

The resistivity, magnetoresistance, thermopower, and magnetic susceptibility of La_1?xA_xMnO₃(A≡Ca,Sr;x=0.07–0.1) single crystals are investigated in the temperature range from 77 to 400 K. Sharp changes in the properties (the resistivity activation energy ΔEρ, its temperature coefficient γ, the thermopower activation energy ΔE _S , the magnetoresistance, and the appearance of spontaneous magnetization) of these crystals occur near a temperature of 275±25 K, which is approximately twice as high as their Curie point T_C and approximately half of the structural transition temperature. The results are explained by the phase separation: the formation of ferromagnetic clusters. The phase separation occurs through the coalescence of small-radius unsaturated magnetic polarons, in which only two or three magnetic moments of Mn are polarized, into a large-radius ferromagnetic polaron (a cluster about 10–12 Å in size) with several charge carriers. As a result, the short-range order occurs in the cluster at a temperature of about 275 K, which is close to T _C of conducting doped manganites. The results of the experimental studies of the resistivity and the magnetoresistance as functions of temperature and magnetic field and the estimates agree well with the cluster model.     

Electron transport,penetration depth,and the upper critical magnetic field in ZrB<Subscript>12</Subscript> and MgB<Subscript>2</Subscript>

We report on the synthesis and measurements of the temperature dependences of the resistivity ρ, the penetration depth λ, and the upper critical magnetic field H_c2, for polycrystalline samples of dodecaboride ZrB₁₂ and diboride MgB₂. We conclude that ZrB₁₂ behaves as a simple metal in the normal state with the usual Bloch-Grüneisen temperature dependence of ρ(T) and with a rather low resistive Debye temperature T_R = 280 K (to be compared to T_R = 900 K for MgB₂). The ρ(T) and λ(T) dependences for these samples reveal a superconducting transition in ZrB₁₂ at T_c = 6.0 K. Although a clear exponential λ(T) dependence in MgB₂ thin films and ceramic pellets was observed at low temperatures, this dependence was almost linear for ZrB₁₂ below T_c/2. These features indicate an s-wave pairing state in MgB₂, whereas a d-wave pairing state is possible in ZrB₁₂. In disagreement with conventional theories, we found a linear temperature dependence, of H_c2(T) for ZrB₁₂ (H_c2(0) = 0.15 T).     

Propriétés magnétiques du thulium à l'état de sesquioxyde et de métal entre 0 et 110 kOe et de 2 à 1560°K

Tm₂O₃ obeys between 80 and 980°K the Curie-Weiss lawχA (T+25=7,08) withμ _eff=7.56 Bohr magnetons, the theoretical value for Tm³⁺(J=6,g=7/6). In the behavior of the metal,χΛ(T-14)=7.45 between 80 and 1540°K, a contribution of the non-localized electrons should be considered at high temperatures. The susceptibility of the metal is maximum at 53°K, minimum near 35°K, and the behavior is antiferromagnetic between these two temperatures, ferromagnetic below 35°K. An additional transition occurs near 10°K, vanishing by cooling in a magnetic field. The effect of this cryomagnetic treatment on the magnetization and the remanence has been measured in six different cooling fields. The magnetization reaches 1.0 and 5.0 magnetons in 26.7 and 110 kOe (pulsed field) respectively, whereas the saturation for the ground state³H₆ isgJ=7.     

Spin-polaron transport and magnetic phase diagram of iron monosilicide

The study of galvanomagnetic, magnetic, and magnetooptical characteristics of iron monosilicide in a wide range of temperatures (1.8–40 K) and magnetic fields (up to 120 kOe) has revealed the origin of the low-temperature sign reversal of the Hall coefficient in FeSi. It is shown that this effect is associated with an increase in the amplitude of the anomalous component of the Hall resistance ρ_H (the amplitude increases by more than five orders of magnitude with decreasing temperature in the range 1.8–20 K). The emergence of the anomalous contribution to ρ_H is attributed to the transition from the spin-polaron to coherent regime of electron density fluctuations in the vicinity of Fe centers and to the formation of nanosize ferromagnetic regions, i.e., ferrons (about 10 Å in diameter), in the FeSi matrix at T<T_C=15 K. An additional contribution to the Hall effect, which is observed near the temperature of sign reversal of ρ_H and is manifested as the second harmonic in the angular dependences ρ_H(?), cannot be explained in the framework of traditional phenomenological models. Analysis of magnetoresistance of FeSi in the spin-polaron and coherent spin fluctuation modes shows that the sign reversal of the ratio Δρ(H)/ρ accompanied by a transition from a positive (Δρ /ρ>0, T>T_m) to a negative (Δρ/ρ<0, T<T_m) magnetoresistance is observed in the immediate vicinity of the mictomagnetic phase boundary at T_m=7 K. The linear asymptotic form of the negative magnetoresistance Δρ/ρ ∝?H in weak magnetic fields up to 10 kOe is explained by the formation of magnetic nanoclusters from interacting ferrons in the mictomagnetic phase of FeSi at T<T_m. The results are used for constructing for the first time the low-temperature magnetic phase diagram of FeSi. The effects of exchange enhancement are estimated quantitatively and the effective parameters characterizing the electron subsystem in the paramagnetic (T>T_C), ferromagnetic (T_m<T< T_C), and mictomagnetic (T<T_m) phases are determined. Analysis of anomalies in the aggregate of transport, magnetic, and magnetooptical characteristics observed in the vicinity of H_m≈35 kOe at T<T_m leads to the conclusion that a new collinear magnetic phase with M∥H exists on the low-temperature phase diagram of iron monosilicide.     

Metal-insulator transition in whiskers of the NbS<Subscript>3</Subscript> quasi-one-dimensional conductor under pressure

The effect of pressure on the conduction of the NbS₃ quasi-one-dimensional conductor is studied. A pressure-induced insulator-metal transition is observed. The transition is accompanied by an increase in conductivity by six orders of magnitude at room temperature. Under pressures of 3–4 GPa, an additional phase transition appears in the temperature dependences of resistance. This transition manifests itself in an increase in the local conduction activation energy. The quantity dln(R)/d(1/T) reaches its maximum under pressures of 4–5 GPa, and the temperature position of the maximum of dln(R)/d(1/T) depends on the pressure as T* ≈ 7.5P + 202 K.     

Effect of the magnetic anisotropy energy distribution of MnSb clusters on spontaneous magnetization reversal of GaMnSb thin films

Temperature m(T) and time m(t) dependences of the magnetic moment of GaMnSb thin films with MnSb clusters have been measured. The m(t) dependences are straightened in semilogarithmic coordinates m(lnt). The temperature dependences of magnetic viscosity S(T) corresponding to the slope of straight lines m(lnt) have been studied. It have been demonstrated that the behavior of dependences S(T) is governed by the lognormal distribution of the magnetic anisotropy energy of MnSb clusters. It have been found that the behavior of dependences m(T) measured after the films were cooled in zero magnetic field and in magnetic field H = 10 kOe is also governed by the lognormal distribution of the magnetic anisotropy energy of MnSb clusters.