Silicon negative ion implantation induced vacancy defects in thermally grown SiO2 thin films

ABSTRACT

Thermally grown SiO₂ thin films on a silicon substrate implanted with 100?keV silicon negative ions with fluences varying from 1?×?10¹⁵ to 2?×?10¹⁷ ions cm^?2 have been investigated using Electron spin resonance, Fourier transforms infrared and Photoluminescence techniques. ESR studies revealed the presence of non-bridging oxygen hole centers, E′-centers and P_b-centers at g-values 2.0087, 2.0052 and 2.0010, respectively. These vacancy defects were found to increase with respect to ion fluence. FTIR spectra showed rocking vibration mode, stretching mode, bending vibration mode, and asymmetrical stretching absorption bands at 460, 614, 800 and 1080?cm^?1, respectively. The concentrations of Si–O and Si–Si bonds estimated from the absorption spectra were found to vary between 11.95?×?10²¹ cm^?3 and 5.20?×?10²¹ cm^?3 and between 5.90?×?10²¹ cm^?3 and 3.90?×?10²¹ cm^?3, respectively with an increase in the ion fluence. PL studies revealed the presence of vacancies related to non-bridging oxygen hole centers, which caused the light emission at a wavelength of 720?nm.     

Superior tolerance of Ag/Ni multilayers against Kr ion irradiation: an in situ study

Monolithic Ag and Ni films and Ag/Ni multilayers with individual layer thickness of 5 and 50?nm were subjected to in situ Kr ion irradiation at room temperature to 1 displacement-per-atom (a fluence of 2?×?10¹⁴?ions/cm²). Monolithic Ag has high density of small loops (4?nm in diameter), whereas Ni has fewer but much greater loops (exceeding 20?nm). In comparison, dislocation loops, ～4?nm in diameter, were the major defects in the irradiated Ag/Ni 50?nm film, while the loops were barely observed in the Ag/Ni 5?nm film. At 0.2?dpa (0.4?×?10¹⁴?ions/cm), defect density in both monolithic Ag and Ni saturated at 1.6 and 0.2?×?10²³/m³, compared with 0.8?×?10²³/m³ in Ag/Ni 50?nm multilayer at a saturation fluence of ～1?dpa (2?×?10¹⁴?ions/cm²). Direct observations of frequent loop absorption by layer interfaces suggest that these interfaces are efficient defect sinks. Ag/Ni 5?nm multilayer showed a superior morphological stability against radiation compared to Ag/Ni 50?nm film.     

Effect of hydrogen defects on nanocrystallite layers of Si solar cells by hydrogen implantation

The Si solar cells were irradiated with high energy hydrogen ions of 10, 30, 60 and 120?keV at the dose rate of 10¹⁷ H⁺ ions (proton)/cm². The structural, optical and electrical properties of the implanted samples and fabricated cells were studied. The implantation induced defects bringing structural changes before and after annealing was evidenced by the transmission electron microscopy. The Raman spectrum showed a change of crystalline to amorphous state at 480?cm^?1 when the sample was implanted by hydrogen ion of 30?keV energy. Formation of nanocrystallite layers were observed after annealing. The electroluminescence images showed that hydrogen-related defect centers were involved in the emission mechanism. The photoluminescence emission from the implanted cells was attributed to nanocrystallite layers. From current–voltage measurements, the conversion efficiencies of implanted Si solar cells were found lower than the un-implanted reference cell. The ion implantation did not passivate the defects rather acted as recombination centers.     

Light-emitting Si nanostructures formed in silica layers by irradiation with swift heavy ions

Thin SiO₂ layers were implanted with 140 keV Si ions to a dose of 10¹⁷ cm⁻². The samples were irradiated with 130 Mev Xe ions in the dose range of 3×10¹²–10¹⁴ cm⁻², either directly after implantation or after pre-annealing to form the embedded Si nanocrystals. In the as-implanted layers HREM revealed after Xe irradiations the 3–4 nm-size dark spots, whose number and size grew with increase in Xe dose. A photoluminescence band at 660–680 nm was observed in the layers with the intensity dependent on the Xe dose. It was found that passivation with hydrogen quenched that band and promoted emission at ∼780 nm, typical of Si nanocrystals. In spectra of pre-annealed layers strong ∼780 nm peak was observed initially. Under Xe bombardment its intensity fell, with subsequent appearance and growth of 660–680 nm band. The obtained results are interpreted as the emission at ∼660–680 nm belonging to the imperfect Si nanocrystals. It is concluded that electronic losses of Xe ions are mainly responsible for formation of new Si nanostructures in ion tracks, whereas elastic losses mainly introduce radiation defects, which quench the luminescence. Changes in the spectra with growth of Xe ion dose are accounted for by the difference in the diameters of Xe ion tracks and their displacement cascades.     

Interface growth mechanism in ion beam sputtering-deposited Mo/Si multilayers

Despite the technological importance of metal/Si multilayer structures in microelectronics, the interface reactions occurring during their preparation are not yet fully understood. In this work, the interface intermixing in Mo/Si multilayer coatings has been studied with respect to their preparation conditions. Various samples, prepared at room temperature with different Mo deposition rates (0.06–0.43?Å?s^?1) and a constant Si rate, have been investigated by detailed TEM observations. Contrary to the Si-on-Mo interface where no evidence of chemical intermixing could be found, the Mo-on-Si interface presents a noticeable interface zone whose thickness was found to noticeably decrease (from 4.1 to 3.2?nm) when increasing the Mo deposition rate. Such intermixing phenomena correspond to diffusion mechanisms having coefficients ranging from 0.25?×?10^?15 to 1.2?×?10^?15?cm²?s^?1 at room temperature. By assuming a diffusion mechanism mainly driven by Mo–Si atomic exchanges to minimize the surface energy, the diffusion dependence with Mo deposition rate has been successfully simulated using a cellular automaton. A refined simulation including Mo cluster formation is also proposed to explain the scenario leading to the full crystallization of Mo layers.     

Synthesis and optical properties of silver nanoparticles in ORMOCER

Experimental results on synthesis of metal nanoparticles in ORMOCER by ion implantation are presented. Silver ions were implanted into organic/inorganic matrix at an accelerating energy of 30?keV and doses in the range of 0.25?10¹⁷ to 0.75?10¹⁷?ion/cm². The silver ions form metal nanoparticles, which demonstrate surface plasmon absorption at the wavelength of 425?C580?nm. The nonlinear absorption of new composite materials is measured by Z-scan technique using 150?fs laser pulses at 780?nm wavelength. ORMOCER matrix shows two-photon nonlinear absorption, whereas ORMOCER with silver nanoparticles demonstrates saturated absorption. Some optical applications of these composite materials are discussed.     

Dissociative Excitation of Tetramethylsilane (TMS) and Hexamethyldisiloxane (HMDSO) by Controlled Electron Impact

The optical emission spectra in the wavelength region 200–800 nm produced by electron impact on the silicon-organic molecules TMS (tetramethylsilane) and HMDSO (hexamethyldisiloxane) under controlled single-collision conditions have been analyzed. Absolute emission cross sections from threshold to 200 eV impact energy were determined for a variety of emission features. For both targets, the CH(A²Δ → X²Π) emission, the so-called CH ?4300 Å”? band, was found to have the largest emission cross section with values (at 100 eV) of 5.5 × 10^?19 cm² and 6.1 × 10^?19 cm² for TMS and HMDSO, respectively. Relatively high onset energies of 28.0 ± 1.5 eV (TMS) and 33.1 ± 1.5 eV (HMDSO) were measured for these emissions. Weaker emission features in both spectra were identified as CH bands corresponding to the B²∑^? → X²Π transition (the CH ?3900 Å”? system) and the C²∑ → X²Π transition, and as the atomic Si line emissions at 253 nm and 288 nm. Near-threshold studies indicate an onset for the Si emissions of 29.0 ± 2.0 eV (TMS) and 44.6 ± 2.0 eV (HMDSO). Absolute cross sections and appearance energies were also determined for the strongest lines of the hydrogen Balmer series for both targets. The comparatively high onset energies and small emission cross sections for all observed emissions indicate that single-step dissociative excitation processes are unlikely to play a dominant role in low-temperature processing plasmas containing TMS and HMDSO.     

Studies on laser–plasma interaction physics for shock ignition

We realized a series of experiments to study the physics of laser–plasma interaction in an intensity regime of interest for the novel “Shock Ignition” approach to Inertial Fusion. Experiments were performed at the Prague Asterix Laser System laser in Prague using two laser beams: an “auxiliary” beam, for pre-plasma creation, with intensity around 7?×?10¹³?W/cm² (250?ps, 1ω, λ?=?1315?nm) and the “main” beam, up to 10¹⁶?W/cm (250?ps, 3ω, λ?=?438?nm), to launch a shock. The main goal of these experiments is to study the process of the formation of a very strong shock and the influence of hot electrons in the generation of very high pressures. The shock produced by the ablation of the plastic layer is studied by shock breakout chronometry. The generation of hot electrons is analyzed by imaging Kα emission.     

Electron inducing soft errors in 28 nm system-on-Chip

ABSTRACT

The 28?nm system-on-chip (SoC) was irradiated by 12?MeV electron at the China Institute of Atomic Energy (CIAE) for the first time. Soft errors in the on-chip memory (OCM), D-Cache, Register and BRAM blocks were investigated. The obtained device cross sections are almost in the range of 10^?13 cm² to 10^?11 cm² for the blocks. The results demonstrate that electron fluence per pulse and the corresponding prompt dose rates have no influence on the soft errors in 28?nm SoC. The discrepancy was analyzed between proton and electron inducing soft errors in D-Cache and BRAM blocks, too. The secondary electron is considered as the dominant reason for soft errors caused by 12?MeV electron in 28?nm SoC.     

Er3+单掺及Er3+/Yb3+共掺SiO2-Al2O3-La2O3玻璃光谱性质研究

研究了单掺Er³⁺及Er³⁺/Yb³⁺共掺SiO₂-Al₂O₃-La₂O₃玻璃的光谱性质随稀土离子浓度变化规律,应用McCumber理论计算了玻璃在1.53 μm的发射截面及积分吸收截面.结果表明:在Er³⁺离子掺杂浓度相同时,玻璃在980 nm吸收截面与Yb³⁺掺杂浓度成反比;当样品中Yb³⁺离子掺杂浓度为3.94×10²⁰ cm^-3时,玻璃在1.53 μm的吸收截面和发射截面最大,在1.40～1.60 μm积分吸收截面也最大;Er³⁺/Yb³⁺共掺SiO₂-Al₂O₃-La₂O₃玻璃在1.53 μm的荧光半高宽随Er³⁺掺杂浓度升高而增加,当Er³⁺离子掺杂浓度为2.41×10²⁰ cm^-3时,玻璃的荧光半高宽(FWHM)达到52.5 nm.     

Effects of silicon negative ion implantation in semi-insulating gallium arsenide

ABSTRACT

In the present work, effects of silicon negative ion implantation into semi-insulating gallium arsenide (GaAs) samples with fluences varying between 1?×?10¹⁵ and 4?×?10¹⁷?ions?cm^?2 at 100?keV have been described. Atomic force microscopic images obtained from samples implanted with fluence up to 1?×?10¹⁷?ion?cm^?2 showed the formation of GaAs clusters on the surface of the sample. The shape, size and density of these clusters were found to depend on ion fluence. Whereas sample implanted at higher fluence of 4?×?10¹⁷?ions?cm^?2 showed bump of arbitrary shapes due to cumulative effect of multiple silicon ion impact with GaAs on the same place. GXRD study revealed formation of silicon crystallites in the gallium arsenide sample after implantation. The silicon crystallite size estimated from the full width at half maxima of silicon (111) XRD peak using Debye-Scherrer formula was found to vary between 1.72 and 1.87?nm with respect to ion fluence. Hall measurement revealed the formation of n-type layer in gallium arsenide samples. The current–voltage measurement of the sample implanted with different fluences exhibited the diode like behavior.     

100 MeV Si8+ ion induced luminescence and thermoluminescence of nanocrystalline Mg2SiO4:Eu3+

Nanoparticles of Mg₂SiO₄:Eu³⁺ have been prepared by the solution combustion technique and the grain size estimated by PXRD is found to be in the range 40–50 nm. Ionoluminescence (IL) studies of Mg₂SiO₄:Eu³⁺ pellets bombarded with 100 MeV Si⁸⁺ ions with fluences in the range 1.124–22.48×10¹² ions cm^?2 are carried out at IUAC, New Delhi, India. Five prominent IL bands with peaks at 580 nm, 590 nm, 612 nm, 655 nm and 705 nm are recorded. These characteristic emissions are attributed to the luminescence centers activated by Eu³⁺ cations. It is found that IL intensity decreases rapidly in the beginning. Later on, the intensity decreases slowly with further increase of ion fluence. The reduction in the ionoluminescence intensity with increase of ion fluence might be attributed to degradation of Si–O (ν₃) and Si–O (2ν₃) bonds present on the surface of the sample. The red emission with peak at 612 nm is due to characteristic emission of ⁵D₀→⁷F₂ of the Eu³⁺ cations. Thermoluminescence (TL) studies of Mg₂SiO₄:Eu³⁺ pellets bombarded with 100 MeV Si⁸⁺ cations with fluences in the range 5×10¹¹ ions cm^?2 to 5×10¹³ ions cm^?2 are made at RT. Two prominent and well resolved TL glows with peaks at ～220 °C and ～370 °C are observed. It is observed that TL intensity increases with increase of ion fluence. This might be due to creation of new traps during swift heavy ion irradiation.     

Secondary ion mass spectrometry measurements of deuterium penetration into silicon by low pressure RF glow discharges

Abstract

Using secondary ion mass spectrometry (SIMS) the penetration of deuterium into Si(100) substrates as a result of exposure to deuterium low pressure rf discharges has been determined as a function of exposure time, thermal contact of the Si wafers to the substrate electrode, substrate doping, and discharge pressure. For undoped (100) single crystal Si exposed without intentional heating to a 25 m torr D₂ plasma for 1 min the deuterium concentration in the near-surface region (0—30 nm) approaches 10²¹ at.cm^?3. It drops off with depth, but is still greater than 10¹⁷ at.cm.^?3 at a silicon depth of 200 nm. The large penetration depth, the observation that lowering the substrate temperature decreases the rate of deuterium uptake, and the dependence of deuterium penetration on the substrate doping type indicate that hydrogen diffusion is of primary importance. The presence of a 50 nm thick oxide layer on the Si substrate during plasma exposure lowers the deuterium near-surface concentration in the Si substrate by about three orders of magnitude, while the presence of 10 nm of thermal oxide reduces the deuterium uptake only insignificantly. Heavily B and As doped polycrystalline Si show less deuterium penetration, while undoped polycrystalline Si shows more deuterium uptake than undoped single crystal Si for the same plasma treatment.     

Roles of local He concentration and Si sample orientation on cavity growth in amorphous silicon

(111)- and (100)-oriented Si samples were implanted with Si⁺ ions at 1 MeV to a dose of 1?×?10¹⁶?cm^?2 and with 5?×?10¹⁶ He⁺ cm^?2 at 10?keV or 50?keV and eventually annealed in the 800–1000°C temperature range. Sample characterisation was carried out by cross-section transmission electron microscopy, positron annihilation spectroscopy and nuclear reaction analysis. In addition to the formation of He bubbles at the projected range of He, bubbles were observed after solid-phase epitaxial growth (SPEG) of the embedded amorphous Si layer. The He threshold concentration required to obtain thermally stable bubbles in amorphised Si is between one and four orders of magnitude lower than in c-Si. Since bubble formation and growth take place in the a-Si phase, the interaction with SPEG during annealing was studied by considering (100) and (111) Si. Both the SPEG velocity and the resulting defects play a role on bubble spatial distribution and size, resulting in bigger bubbles in (111) Si with respect to (100) Si.     

Mixing of Au in Si induced by secondary and high-order recoil implantation

The mixing of Au in Si induced by secondary and high-order recoil implantation was investigated using 350 keV Ar⁺ and 350 keV Kr⁺ ions to fluences from 1?×?10¹⁶ to 3?×?10¹⁶ ions/cm² at room temperature. The thickness of the Au layer evaporated on Si substrate was ～2400 Å.The ranges of the Ar and Kr ions were chosen to be lower than the thickness of the Au layer in order to avoid the ballistic mixing produced by the primary knock-on atoms. Rutherford backscattering spectrometry (RBS) experiments were carried out to study the effects induced by Ar and Kr irradiation at the interface of Au–Si system. We observed that in the case of the irradiation with Ar⁺ ions, a broadening of the Au–Si interface occurred only at the fluence of 3?×?10¹⁶ Ar⁺/cm² and it is attributed to the surface roughening induced by ion bombardment. In contrast, the RBS analysis of a sample irradiated with 2?×?10¹⁶ Kr⁺/cm² clearly showed, in addition to the broadening effect, the formation of a mixed zone of Au and Si atoms at the interface. The mixing of Au in Si atoms can be explained by the secondary and high-order recoil implantation followed by subsequent collision cascades.     

Determination of the chemical states of impurities in natural kyanite by the ionoluminescence technique

Ionoluminescence (IL) of natural kyanite crystals was studied during 120 MeV Au⁹⁺ ion irradiation in the fluence range 1.50?12 × 10¹¹ ions/cm². The IL spectrum exhibits sharp peaks at ～689, 694, 705, 713 and 716 nm, along with a broad emission peak at 530 nm recorded for all samples investigated. The sharp emission peaks at 689 and 694 nm are attributed to R₂ and R₁ lines of Cr³⁺ impurities, and they are related to the transition ²E_g → ⁴A_2g. The peaks at 705–716 nm are attributed to Fe³⁺ impurities and are related to the transition ⁴T_1g → ⁶A_1g. It was observed that up to a given fluence, the IL peak intensity grows, reaches a maximum and gradually decreases with increase of Au⁹⁺ ion fluence. The decrease in IL intensity might be attributed to disorder produced by dense electronic excitation under swift heavy ion irradiation. The stability of the chemical species was studied both with and without irradiation by means of FTIR spectroscopy. The results confirm that the Si?O?Al, Al?O and Si?O (2ν₃) type species are destroyed due to amorphization.     

Epitaxial growth of silicon on silicon implanted with iron ions and optical properties of resulting structures

The method of ultrahigh-vacuum low-temperature (T = 850°C) purification of silicon single crystals having the (100) and (111) orientation and implanted with low-energy (E = 40 keV) iron ions with various doses (Φ = 10¹⁵?1.8×10¹⁷ cm^?2) and subjected to pulsed ion treatment (PIT) in a silicon atom flow has been tested successfully. The formation of semiconducting iron disilicide (β-FeSi₂) near the surface after PIT is confirmed for a Si(100) sample implanted with the highest dose of iron ions. The possibility of obtaining atomically smooth and reconstructed silicon surfaces is demonstrated. Smooth epitaxial silicon films with a roughness on the order of 1 nm and a thickness of up to 1.7 μm are grown on samples with an implantation dose of up to 10¹⁶ cm^?2. Optical properties of the samples before and after the growth of silicon layers are studied; the results indicate high quality of the grown layers and the absence of iron disilicide on their surface.     

An interpretation of dlts spectra of Al/Si3N4/ultrathin SI/GaAs structures — Effect of quantum well or interface states?

We discuss DLTS andC-V measurements on Al/Si₃N₄/Si(2nm)/n-GaAs (≈ 5×10¹⁷ cm^?3) structures. Three discrete deep traps superimposed on a U-shaped interface-state continuum have been identified, with respective thermal energies:E _c?0.53 eV,E _c?0.64 eV, andE _v+0.69 eV. The second one (0.64 eV) is presented as an electric field sensitive level, its enhanced phonon-assisted emission resulting in a rapid shift of the corresponding DLTS peak to lower temperatures, as the applied (negative) reverse bias voltage increases. An interpretation through emission from the quantum well, introduced by means of the intermediate ultrathin Si layer, has failed.     

Modification of the magnetic properties of polyimide films by cobalt ion implantation

The magnetic characteristics of polyimide films implanted with Co⁺ ions with an energy of 40 keV in the dose range D = 2.50 × 10¹⁶?1.25 × 10¹⁷ cm^?2 at ion current densities j = 4, 8, and 12 μA/cm² have been investigated. It has been shown that, at implantation doses of less than 5 × 10¹⁶ cm^?2, the superparamagnetic properties of modified samples are described by the Langevin equation. At higher doses, there is an intercluster interaction. It has been found that, with an increase in the ion current, the cluster size decreases. The sizes of the formed clusters are determined and vary in the range from 3.9 to 11.0 nm, depending on the implantation dose.     

Nickel metallisation of Si by dynamic ion-beam mixing

Abstract

Thin Ni films were prepared at room temperature by Ni metal vapour deposition and simultaneous irradiation by Ar ions with an energy of 2–20 keV. The reaction of Ni with Si during dynamic ion-beam mixing was studied. The fluences of the ion beam were 4.7 × 10¹⁷ and 8.9 × 10¹⁷ cm^?2, and arrival rate ratios Ni/Ar were 9.7 and 5.1. Concentration profiles of Ni, Si, C, and O were analysed with Auger electron spectroscopy; the surface morphology and the crystalline structure were investigated with a cross-sectional scanning electron microscope and X-ray diffractometry. The theoretical profiles were calculated with the dynamic Monte Carlo simulation T-DYN for comparison with the experimentally obtained profiles. It was possible to observe the ballistic mixing effects and also thermally activated formation of nickel silicide.