硅薄膜沉积中等离子体辉光功率和阻抗的测试分析

采用改进的电压和电流测试方法对衬底电极外加不同电压V_s的射频等离子体中的阻抗和功率消耗进行了测试分析.结果表明：在射频电极施加恒定的电压V_el时，随衬底电极外加电压V_s的增加，辉光的电流在增加，结果导致阻抗在减小；另外，通过计算分析发现：仅有一小部分功率用于辉光，大部分功率消耗在匹配器和电缆上.通过对等离子体电学特性的综合测试分析也说明：在保证有足够多的硅烷时，衬底电极外加电压V关键词： 等离子体 辉光功率 阻抗 诊断     

Electrical and optical properties of thin film of amorphous silicon nanoparticles

Electrical and optical properties of thin film of amorphous silicon nanoparticles (a-Si) are studied. Thin film of silicon is synthesized on glass substrate under an ambient gas (Ar) atmosphere using physical vapour condensation system. We have employed Field Emission Scanning Electron Microscopy (FESEM), Transmission Electron Microscopy (TEM) and Atomic Force Microscopy (AFM) to study the morphology and microstructure of this film. It is observed that this silicon film contains almost spherical nanoparticles with size varying between 10 and 40 nm. The average surface roughness is about 140 nm as evident from the AFM image. X-ray diffraction analysis is also performed. The XRD spectrum does not show any significant peak which indicates the amorphous nature of the film. To understand the electrical transport phenomena, the temperature dependence of dc conductivity for this film is studied over a temperature range of (300-100 K). On the basis of temperature dependence of dc conductivity, it is suggested that the conduction takes place via variable range hopping (VRH). Three-dimensional Mott's variable range hopping (3D VRH) is applied to explain the conduction mechanism for the transport of charge carriers in this system. Various Mott's parameters such as density of states, degree of disorder, hopping distance, hopping energy are estimated. In optical properties, we have studied Fourier transform infra-red spectra and the photoluminescence of this amorphous silicon thin film. It is found that these amorphous silicon nanoparticles exhibits strong Si-O-Si stretching mode at 1060 cm⁻¹, which suggests that the large amount of oxygen is adsorbed on the surface of these a-Si nanoparticles. The photoluminescence observed from these amorphous silicon nanoparticles has been explained with the help of oxygen related surface state mechanism.     

Effects of pinhole diameters on beam characteristics for silicon thin film optical inspection

Peak power density stability and beam-wander precision of probe laser are important factors affecting the inspection results in the precision thin film optical measurements. Pinhole is frequently used as a spatial filter in the optical inspection system. In this work, four different diameters of pinhole are investigated experimentally. It is found that pinhole diameter of 0.3 mm is considered to be a promising candidate for mounting in front of probe laser for silicon thin film optical inspection due to better peak power density stability and better beam-wander precision.     

C-band three-port tunable band-pass thin film optical filter with low polarization-sensitivity

According to the oblique incidence characteristics of thin film narrowband filter, the stack of 100 GHz DWDM four cavities angle-tuned thin film filter has been designed and optimized. The two polarization modes’ central wavelengths of the thin film filter can be centered at the same one in oblique incidence, and it has a stable tuning range of 20 nm without the phenomenon of polarization central wavelength separation. Using this kind of angle-tuned thin film filter and the polarization beam-splitters, the tuning range of the angle-tuned thin film filter can be further expanded due to the reason that it can transmit only the s-polarization light. In this paper we also developed a three-port bandpass tunable filter device with new structure, which tuning range can cover the whole C-band and its adjacent channel isolation degree is high. The experiments show that the three-port tunable filter has an effective tuning range of 33 nm, and its adjacent channel isolation degree is more than 35 dB. It has a bright application opportunity for its flexibility and effective performance.     

Femtosecond cubic optical nonlinearity of thin nickel films

Transient pump-probe measurements of circular anisotropy in nickel films induced by 38-fs optical pulses show an instantaneous response that is related to the optical orientation of the spins of free electrons. Measurements in a sample of variable thickness, performed in both transmission and reflection, revealed that the surface significantly influences the degenerate cubic optical nonlinearity of the nickel films to a depth of approximately 4-5 nm into the bulk.     

Nonlinear optical transmission of polyquinoline thin film at 532 nm

Optical nonlinearities of polyquinoline thin film were studied by measuring fluence-dependent transmission with nanosecond pulses from the second harmonic of an Nd: YAG laser. It is found that the origin of nonlinearity is due to the excited-state absorption in the nanosecond domain. To our knowledge, we report the first simultaneous determination of the decay time for the excited-state and the excited-state absorption cross-section of polyquinoline by analysing the linear slopes of the transmission versus fluence plot, which are dependent on pulsewidth.     

The third-order optical nonlinearity of the stainless steel doped SrTiO_3 thin film grown by L-MBE

Stainless steel-doped SrTiO3 thin films were fabricated by laser molecular beam epitaxy (L-MBE). Nonlinear optical property of the thin film was measured by the single beam Z-scan technique at the wavelength of 532 nm. Two two-phonon absorption coefficient and nonlinear refractive index were determined to be 9.37 x 10-7 m/W and 1.55 x 10-6 esu, respectively. The merit figure T was calculated to be 1.8, satisfying condition T < 1 for an optical switch. The thin film has a very promising prospect for the applications in optical device.     

Giant optical nonlinearity of an atomic Bose-Einstein condensate and low-threshold bistability

The polarization of an atomic Bose-Einstein condensate weakly excited by laser radiation at a nearly resonance frequency is determined. The coefficient of nonlinearity (cubic in field) in the refractive index of the condensate is calculated for the slow decay mode due to the spontaneous emission of excited atoms, as well as for the stationary mode, when the loss of atoms is compensated by the injection of atoms into the trap. In both cases, the cubic nonlinearity coefficients of the condensate are several orders of magnitude larger than the corresponding values for known nonlinear media. The conditions for observing hysteresis in an interferometer containing the condensate in the stationary state in the presence of an incident laser beam are specified.     

薄膜硅/晶体硅异质结电池中本征硅薄膜钝化层的性质及光发射谱研究

本文采用甚高频等离子体化学气相沉积技术 (VHF-PECVD) 制备薄膜硅/晶体硅异质结电池中的本征硅薄膜钝化层, 光发射谱 (OES) 测量技术研究了硅薄膜沉积过程中等离子体发光谱随时间的变化. 结果表明: 在实验优化条件下等离子体发光谱很快达到稳定 (大约25 s), 并且SiH^*/H_α^* 的比值随时间变化较小, 避免了生长过程中硅薄膜结构的不均匀性, 这主要是SiH₄没有完全耗尽避免了SiH₄的反向扩散. 进一步研究了沉积参数对稳态发光谱和硅薄膜性质的影响, 结果表明: 随着硅烷浓度增加, H_α^*峰强度减小, SiH^*峰强度增加, 薄膜从微晶转变成非晶, 非晶硅薄膜钝化效果好; 随着沉积气压增大, H_α^*和 SiH^*峰强度先增加后减小, 高气压下H_α^*和 SiH^*峰强度下降主要是反应前驱物的聚合形成高聚合物, 不利于形成高质量的硅薄膜, 因此钝化效果下降; 随着反应功率密度增加, H_α^*和 SiH^*峰强度增大, 当功率密度为150 mW/cm² 趋于饱和, 硅薄膜的致密度和钝化效果也开始下降, 50 mW/cm²的低功率密度下硅薄膜钝化效果差可能是由于原子H 浓度低, 不能完全钝化单晶硅表面的悬挂键. 关键词： 薄膜硅 异质结 光发射谱 钝化     

Enhancement of optical absorption in amorphous silicon thin film solar cells with periodical nanorods to increase optical path length

In this paper, we demonstrate an amorphous silicon (a-Si) thin film solar cell (TFSC) with a homogeneous layer of a-Si to absorb short wavelength photons and periodical a-Si nanorod structures for light trapping enhancement for longer wavelength photons. In such a design, the total absorption can be greatly improved. The periodicity and duty ratio of the nanorods were optimized to enhance the total optical absorption within 500 nanometer (nm) to 1000 nm in the hybrid TFSC structure. The best overall absorption can be achieved when period of nanorods is about 500 nm. When the duty ratio of nanorods is 0.6, the average absorption can reach 80% which represents an improvement by 40% compared to the conventional thin film a-Si solar cell without nanorod structures.     

椭偏透射法测量氢化非晶硅薄膜厚度和光学参数

针对多角度椭偏测量透明基片上薄膜厚度和光学参数时基片背面非相干反射光的影响问题,报道了利用椭偏透射谱测量等离子增强化学气相沉积法(PECVD)制备的a-Si:H薄膜厚度和光学参数的方法,分析了基片温度T_s和辉光放电前气体温度T_g的影响.研究表明,用椭偏透射法测量的a-Si:H薄膜厚度值与扫描电镜(SEM)测得的值相当,推导得到的光学参数与其他研究者得到的结果一致.该方法可用于生长在透明基片上的其他非晶或多晶薄膜. 关键词： 椭偏测量 透射法 光学参数 氢化非晶硅薄膜     

Nonlinear optical properties of thin films at a low light intensity

Nonlinearity of optical parameters of semiconductor and dielectric films for a 0.63-nm-wavelength light with intensity lower than 100 mW/cm² is discovered and studied.     

Defects in thin film silicon at the transition from amorphous to microcrystalline structure

Defects in thin film silicon with different structure all the way from amorphous to microcrystalline were investigated by electron spin resonance with emphasis on amorphous material prepared close to the transition to crystalline growth. Electron beam irradiation and stepwise annealing is used for reversible variation of the defect density over three orders of magnitude. The electron irradiation enhances mainly the native paramagnetic defects. Additional resonances are found as satellites to the central line, which anneal rapidly at temperatures below 100 °C. These features are most pronounced for the amorphous material prepared close to the transition to crystalline growth. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

在半导体-金属相变温度附近氧化钒薄膜光学性质的异常变动

在可见光—近红外波段的不同波长下,测量了半导体-金属相变过程中氧化钒薄膜样品的反射率和透射率.在薄膜相变过程中,不同波段的反射率曲线和透射率曲线表现出不同的变化趋势.利用非相干光在薄膜中的多级反射-透射模型,计算了相变过程中不同波长下氧化钒薄膜的折射率n和消光系数k随温度的变化.结果表明,在相变温度附近氧化钒薄膜光学性质的异常变动,其原因既有薄膜的折射率和消光系数随波长的变化趋势不同,也有在吸收性薄膜中存在探测光多次反射和透射的累加效应.     

BN thin film as thermal interface mateiral for high power LED: thermal resistance and optical analysis

Over heat in junction temperature of an LED can impact the luminous performance of the lighting system. The more heat extracted from the system, the easier the LEDs can be driven; resulting in more light output and possibly a reduction in the number of LEDs needed to achieve the desired level of light output. Consequently, thin film based thermal interface mateiral (TIM) has been suggested and BN thin film was prepared on Cu substrate which is used as TIM. The 3W green LED was tested with BN thin film interface and observed low $T_{J}$ and total thermal resistance (R $_\mathrm{th-tot})$ value at 700 mA. The $\Delta T_{J}$ was 3.79  $^\circ $ C which was high compared to bare Cu. Overall, BN thin films was performed well on maintaining both the $T_{J}$ and the optical output considerably and could be an alternative for commersial thermal paste.     

Giant enhancement of optical nonlinearity in mixtures of graded particles with dielectric anisotropy

To investigate the effective linear dielectric constant and third-order nonlinear susceptibility of composite media, in which graded inclusions with radial dielectric anisotropy are randomly embedded in a linear isotropic matrix, we develop an nonlinear anisotropic differential effective dipole approximation (NADEDA). Alternatively, based on a first-principles approach, the exact expressions for and are also derived for the linear dielectric profiles with small slopes. Then, excellent agreement between the two methods is numerically demonstrated. As an application, we further apply the NADEDA to a nonlinear metal-dielectric composite, in which the metal particles possess spatially varying radial dielectric anisotropy, in an attempt to study the nonlinearity enhancement and the figure of merit of the composite. To this end, it is shown that the presence of gradation in the radial dielectric constant plays a crucial role in enhancing the optical nonlinearity as well as the figure of merit.Received: 16 August 2003, Published online: 30 January 2004PACS: 77.22.Ej Polarization and depolarization - 42.65.-k Nonlinear optics - 42.79.Ry Gradient-index (GRIN) devices - 77.84.Lf Composite materials     

硅掺杂铝镓氮薄膜场发射性能研究

利用脉冲激光沉积,分别制备了一系列不同Si掺杂浓度的铝镓氮(AlGaN)薄膜.对此薄膜进行场致电子发射测试表明,Si掺杂浓度为1％的AlGaN薄膜具有最好的场发射特性.相对于非掺杂样品,其场发射电流明显增加,场发射开启电场显著降低.掺杂带来载流子浓度的提升,为场发射提供足够的电子源,使样品的场发射性能提升.但掺杂浓度的进一步提高,薄膜缺陷增加,电子迁移率降低,其薄膜内部电子输运能力降低大于电子浓度的增加对场电子发射的贡献,导致场发射性能开始变差.     

微晶硅薄膜晶体管稳定性研究

对有源区处于结构过渡区的微晶硅底栅薄膜晶体管，测试其偏压衰退特性时，观察到一种“自恢复”的衰退现象.当栅和源漏同时施加10 V的偏压时，测试其源-漏电流随时间的变化，发现源-漏电流先衰减、而后又开始恢复上升的反常现象.而当采用栅压为10 V、源-漏之间施加零偏压的模式时，源-漏电流随时间呈先是几乎指数式下降、随之是衰退速度减缓的正常衰退趋势.就此现象进行了初步探讨. 关键词： 过渡区硅材料 微晶硅薄膜晶体管 稳定性 自恢复衰退     

Electroforming of thin film silicon based homojunction pin diode

The recent observations of bright visible electroluminescence (EL) from electroformed thin film silicon based wide-gap alloys are further clamped down in a simpler structure. For this purpose, a standard quality, ordinary hydrogenated amorphous silicon (a-Si:H) homojunction pin diode was fabricated by plasma enhanced chemical vapor deposition. The fresh diode was characterized by temperature scanned current–voltage (I–V) and constant photocurrent measurements. The energy distribution of density of states within the forbidden gap of the intrinsic a-Si:H layer was determined by space charge limited current and optical absorption spectroscopies. Then the diode was intentionally subjected to a sufficiently high, calibrated electric field leading to its Joule heating assisted rapid crystallization at ambient atmosphere. The fresh and the formed diodes exhibit different I–V and EL characteristics. The current density of the formed diode increases drastically at low voltages while remaining unchanged at high voltages when compared to that of the fresh diode. Parallelly, the room temperature EL intensity under a particular current stress is boosted with electroforming. These interesting phenomena have been discussed in the frame of a self-consistent model.