Giant Magnetoresistance in La0.67Ca0.33MnO3/Alq3/Co Sandwiched-Structure Organic Spin Valves

La_0.67Ca_0.33MnO₃/Alq₃/Co sandwiched-structure organic spin valves are fabricated by vacuum thermal evaporation method. A giant magnetoresistance (GMR) of 14% is observed at low temperature 100K. At 30K, the magnetoresistance can increase to 50%. The large GMR of the device is attributed to the high spin polarization and low conductivity of the La_0.67Ca_0.33MnO₃ contact. The magnetoresistance ΔR/R and the coercive field of the Co electrode depend strongly on temperature. The large high-field magnetoresistance reported on La_0.67Sr_0.33MnO₃/Alq₃/Co organic spin valves [Nature 427 (2004) 821] is not observed in our La_0.67Ca_0.33MnO₃/Alq₂/Co organic spin valves.     

Fe3O4 Segregation and Transport Properties of La0.67Ca0.33MnO3

Effect of Fe3O4 segregation at grain boundaries on the electrical transport and magnetic properties of La0.67Ca0.33MnO3 is investigated. The experimental results show that the Fe3O4 segregation not only shifts the paramagnetic-ferromagnetic transition temperature of La0.6TCa0.33MnO3 to a lower temperature region but also induces a new transition in a lower temperature region. Meanwhile, the transition processes observed in both the resistivity and magnetization curves are obviously widened. Compared to pure La0.67Ca0.33MnO3, we assume that the Fe3O4 segregation level at the grain boundaries can modify the electrical transport and magnetic properties of La0.67Ca0.33MnO3.     

Structural and Optical Properties of Nanocrystal In2O3 Films by Thermal Oxidation of In2S3 Films

In₂S₃ nanocrystalline films are prepared on glass substrates by the spray pyrolysis technique using indium chloride and thiourea as precursors. The deposition is carried out at 350°C on glass substrates. The films are then annealed for two hour at 200, 400, 600, and 800°C in O₂ flow. This process allows the transformation of nanocrystal In₂O₃ films from In₂S₃ films and the reaction completes at 600°C. These results indicate that the In₂O₃ film prepared by this simple thermal oxidation method is a promising candidate for electro-optical and photovoltaic devices.     

Superconducting Transition Temperature and Metal--Semiconductor Transition Temperature in YBa2Cu4O8/La0.67Ca0.33MnO3/YBa2Cu4O8 Trilayer Films

YBa₂Cu₄O₈/La_0.67Ca_0.33MnO₃/YBa₂Cu₄O₈(YBCO/LCMO/YBCO) trilayer films were prepared by magnetron facing-target sputtering. For the first time, the oscillatory behaviour of superconducting transition temperature T_c,ON with the thickness of LCMO (d_L) has been observed. The strongest nonmonotonic information in the T_c,ON--d_L curves appears clearly when d_L is larger than the critical thickness d_L^CR. The metal--semiconductor transition temperature can only be detected at d_L>d_L^CR. The dependence on the ferromagnetic spacer layer in YBCO/LCMO/YBCO systems suggests strongly the interplay of ferromagnetic and superconducting couplings.     

Relaxor Behaviour and Ferroelectric Properties of （Li0.12Na0.88） （Nb0.9-xWa0.10Sbx）O3 Lead-Free Ceramics

New lead-free ceramics （Lio.12Na0.88） （Nbo.9-x Ta0.10 Sbx） 03 （0.01 × 0.06） are synthesized by solid-state reaction method. The dielectric, piezoelectric and ferroelectric properties of the ceramics are studied. The dielectric constant dependence with temperature and frequency of the ceramic specimen with x = 0.04 shows typical characteristics of relaxor ferroelectrics, and the Vogel-Fulcher relationship is fulfilled. The dielectric behaviour and its relation to the phase transition phenomena are discussed. The polarization hysteresis loops at room temperature are also measured.     

Effect of Al^3＋ on Photoluminescence Properties of Eu^3＋-Doped BaZr（BO3）2 Phosphors

We discuss the influence of Al^3＋ on the charge transfer state （CTS） and the photoluminescence properties of BaZr（BO3）2：Eu. The results reveal that there is a red shift which is about 20nm for the charge transfer state when doping with Al^3＋ and indicate the formation of ‘free＇ electrons due to the change of microstructures. In addition, the influence or Al^3＋ doping on the PPR is analysed and a new explanation is raised based on the photo luminescent mechanism. It is the CTS intensity rather than the CTS energy that influences the peak-peak ratio.     

Magnetic Properties of Hf0.8Ta0.2（Fe0.97A0.03）2 （A=Al, Co, Mn） Systems

Moessbauer studies on the effect of substitution with 3% Al, Co, Mn atoms in the intermetallic compound of Hf0.8Ta0.2Fe2 are reported. The Al substitution leads to increase of the FM-AFM transition temperature and to decrease of the AFM-PM transition temperature. The Co substitution leads to disappearance of the FM state, only showing some FM impurity component, while Mn substituted compound indicates coexistence of FM and AFM states at low temperature. The phenomena imply complex itinerant electron properties in these magnetic systems.     

Analysis of （1, 2） （1, 3） and （2, 3） Bands in the c^3Ⅱu- b^3Ⅱg System of P2

We investigate the high resolution absorption spectroscopy of P2 radical, generated in ac glow discharge of PC13 buffered with helium, using optical heterodyne magnetic rotation enhanced concentration modulation spectroscopy in the visible region. The （1, 2）, （1, 3） and （2, 3） bands of c^3Ⅱu- b^3Ⅱg in the range 16620-17860cm^-1 are observed and their 3II2 3II2 subbands are rotationally analysed. A set of effective molecular constants for the Ω= 2 component of the states involved are determined.     

Simulation of Temperature-Dependent Resistivity for Manganite La1/3Ca2/3MnO3

The resistivity of the heavy-doped La1/3Ca2/3MnO3 （LCMO） is simulated using a random resistor network model, based on a phase separation scenario. The simulated results agree well with the reported experimental data, showing a transition from a charge-disordered （CDO） state embedded with a few ferromagnetic （FM） metallic clusters to a charge-ordered （CO） state, corresponding to the transition from a high-temperature paramagnetic （PM） insulating state to a low-temperature antiferromagnetic （AF） insulating state. Furthermore, we find that the number of AF/CO clusters increases with decreasing temperature, and the clusters start to connect to each other around 250K, which causes percolating in the system. The results further verify that phase separation plays a crucial role in the electrical conductivity of LCMO.     

Synthesis of Cubic Boron Nitride by the Reaction of Li3N and B2O3

Cubic boron nitride is synthesized by the reaction of Li3N and B203 under high pressure and high temperature （4.0-5.0 GPa, 1350-1500℃）. The minimum pressure of cBN formation is 4.0 GPa. The present condition of cBN formation is clearly lower than the eutectic temperature of Li3BN2 and BN in the Li3N-hBN system （5.5 GPa, 1610℃）. The content of cBN in the sample increases, while the content of hBN decreases with the temperature and pressure. The maximum conversion rate （5.0 GPa, 1500℃） is about 34%, which is higher than that in the hBN-Li3N system. The cBN crystals are octahedral or tetrahedral in shape and approximately 20 μm in diameter.     

Dielectric Properties of Fine-Grained BaTiO3 Ceramics under High Pressure

We investigate the temperature dependence of the dielectric constant of BaTiO3 ceramic with coarse to nanograin size under different hydrostatic high pressures up to 5000 bar in the range between room temperature and 200℃. The ferroelectric-to-paraelectric phase transition temperatures Tc are determined from the peak of dielectric constant versus temperature. The values of average grain-size are estimated from the SEM images. It is found that the magnitude of dTc/dp varies considerably from sample to sample depending on grain size. The Curie point Tc of the sample with small grain size decreases more sharply than that of samples with larger one.     

Structural Transition of Gd2O3：Eu Induced by High Pressure

The structural transition of bulk and uano-size Gd2O3：Eu are studied by high pressure energy disperse x-ray diffraction （XRD） and high pressure photoluminescence. Our results show that in spite of different size of Gd2O3 particles, the cubic structure turns into a possible hexagonal one above 13.4 GPa. When the pressure is released, the sample reverses to the monoclinic structure. No cubic structure presents in the released samples. That is to say, the compression and relaxation of the sample leads to the cubic Gd2O3：Eu then turns into the monoclinic one.     

Deep InP Gratings for Opto-Electronic Devices Etched by C12/CH4/Ar Inductively Coupled Plasma

Deep InP gratings are etched by C12/CH4/Ar inductively coupled plasma （ICP） at room temperature. A comparison is made between SiNz mask patterns formed by wet and dry etching. SF6 reactive ion etching is adopted for smooth and vertical sidewall. The etching conditions of C12/CH4/Ar ICP are optimized for high anisotropy, and a 1.7-μm-deep InP grating with an aspect ratio of 10：1 is demonstrated. The technique is then used for the fabrication of 1.55-μm laterally coupled distributed feedback A1GMnAs-InP laser.     

Optical Waveguide Formed in RbTiOPO4 Crystal by 6.0 MeV O^3＋ Implantation

A planar optical waveguide was formed in RbTiOP04 crystal by 6.0-MeV oxygen ion implantation with the dose of 2 × 10^15 ions/cm2 at room temperature. Annealing at 200℃ for 30min in air is performed to improve the thermal stability of the waveguide. The dark modes of the waveguide are measured at wavelengths 633 and 1539 nm, respectively. The refractive index profiles in the guiding layer are reconstructed by using the reflectivity calculation method. TRIM＇98 code was carried out to simulate the damage profiles caused by the implantation process to obtain a better understanding of the waveguide formation.     

Transition from Backscattering Speckles to Phase Conjugation in LiNbO3：Fe

We investigate the backscattering for converging beams in iron-doped lithium niobate crystals. Due to the nonlinear properties of the crystal, backscattering exhibits temporally fluctuating speckles that make a transition to the phase conjugate of the incident beam under certain circumstances. Our observation seems to point to a new kind of self-pumped phase conjugation in photorefractive media.     

Compact, Low Threshold Nd^3＋：YVO4 Self-Raman Laser at 1178 nm

A compact low-threshold Raman laser at 1178 nm is experimentally realized by using a diode-end-pumped actively Q-switched Nd^3＋ ：YVO4 self-Raman laser. The threshold is 370mW at a pulse repetition frequency of S kHz. The maximum Raman laser output is 182 m W with the pulse duration smaller than 20 ns at a pulse repetition frequency of 30kHz with 1.8 W incident power. The optical efficiency from the incident power to the Raman laser is 10% and the slope efficiency is 13.5%.     

Photoemission Spectroscopy and Electronic Structures of LiMn2O4

We study the electronic structures of LiMn2O4 by x-ray and ultraviolet photoelectron spectroscopy （XPS, UPS） and resonant photoelectron spectroscopy （RPES）. XPS data suggest that the average oxidation state of Mn ions is 3.55, probably due to the small amount of lithium oxides on the surface. UPS and RPES data imply that Mn ions are in a high spin state, and RPES results show strong Mn3d-O2p hybridization in the LiMn2O4 valence band.     

Ground State Property of LiV2O4

The spinel structure LiV2O4 is studied by local density approximation （LDA） as well as including strong correlation correction potential, i.e. the LDA＋U scheme, which concerns the strongly correlated interaction. With LDA, the orbitals of V 3d and O 2p are well separated so that it presents purely metallic heavv fermion behaviour. The total energy of ferromagnetic phase is slightly lower than that of paramagnetic phase within the LDA ap- proach. This implies that the ferromagnetic instability as a consequence of spin frustrated magnetism can be observed in experiments. The strong correlation interaction by using LDA＋U enhances the exchange splitting. The heavy-fermion feature can be derived from the sharp peak around the Fermi level from the density of states.     

Photocatalytic Properties of TiO2/Si-NPA Nano Composite Systems

A new composite system is fabricated by depositing the TiO2 film on a silicon nanoporous pillar array （Si-NPA） and annealing at 500℃ using the spin coating method. Such a composite system exhibits a uniform morphology with the micron-dimension pillar array. Photocatalytic properties are investigated based on the degradation of methyl orange dye solution, and the results show that the photocatalytic efficiency of such a nano-composite system is 1.7 times that of the TiO2/glass system. The enhancement of photocatalytic efficiency is attributed to the large surface area of the TiO2/Si-NPA system.     

Diode End-Pumped Passively Q-Switched Nd^3＋：GdVO4 Self-Raman Laser at 1176 nm

A compact diode-end-pumped passively Q-switched Nd^3＋ ：GdVO4/C^r4＋ ：YAG self-Raman laser at 1176 nm is demonstrated. When the To = 80% Cr^4＋：YAG saturable absorber is inserted into the cavity, the maximum Rtaman laser output reaches 175 mW with 3.8 W incident pump power. The optical conversion from incident to the Raman laser is 4.6% and the slope efficiency is 6.5%. The pulse energy, duration, and repetition frequency of the first stokes laser are 4.5μJ, 1.8 ns, and 38.5 kHz, respectively. There is strong blue emission （about 350- 400nm） can be observed in the Nd^3＋ ：GdVO4 crystal when the process of stimulated Raman scattering occurs, which is induced by the upconversion of the Nd^3＋ ions.